会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 87. 发明授权
    • Method and apparatus for inserting a title sheet into an optical disk case
    • 将标题片插入光盘盒中的方法和装置
    • US06324816B1
    • 2001-12-04
    • US09519407
    • 2000-03-03
    • Kaoru Yamamoto
    • Kaoru Yamamoto
    • B65B6304
    • B65B25/002
    • A title sheet inserting machine includes a rotatable turret having a plurality of equally spaced copes, which each have a corrugated contact face adapted to hold a title sheet. A drag is provided movably toward and away from the cope at the first station of the turret. A space forming device provided adjacent to the second station of the turret is adapted to form a title sheet insertion space in the case. A case transferring pusher transfers the case formed with the title sheet insertion space therein toward the cope placed at the second station of the turret. A case retreating pusher retreats the case having the title sheet therein from the cope placed at the third station of the turret.
    • 标题页插入机器包括具有多个相等间隔的可翻转的可转动的转台,每个都具有适于保持标题页的波纹接触面。 在转台的第一站处可移动地向上和远离上方提供阻力。 与转台的第二站相邻设置的空间形成装置适于在壳体中形成标题片插入空间。 转移推动器的壳体将形成有标题页插入空间的壳体转移到放置在转台的第二站处的上盖板。 撤回推动器的壳体从放置在转台的第三站处的副箱中撤回其中具有标题片的壳体。
    • 89. 发明授权
    • Nonvolatile semiconductor storage device having main block and redundancy block formed on different wells
    • 具有形成在不同井上的主块和冗余块的非易失性半导体存储装置
    • US06215699B1
    • 2001-04-10
    • US09317821
    • 1999-05-25
    • Kaoru Yamamoto
    • Kaoru Yamamoto
    • G11C1606
    • G11C29/82G11C8/12G11C16/06
    • There is provided a nonvolatile semiconductor storage device that has a high reliability free from malfunction of redundancy block during erase operation and causes no disadvantage in terms of layout area thereof. A memory array is a virtual ground type memory array employing ACT memory cells MC. A redundancy block 35 uses a redundancy sector constructed of the ACT memory cells MC of one line connected to one redundancy word line RWL as a unit of redundancy. Then, the redundancy block 35 and a main block 31 are formed on different p-wells of a triple well while being electrically insulated from each other. Thus, by applying a negative voltage to only the p-well of the main block 31 and keeping the p-well of the redundancy block 35 at zero volt during an erase operation, the redundancy block 35 is not erased. Further, there is no need for providing a source line level supply circuit besides a main block control circuit 32, so that no disadvantage occurs in terms of layout area.
    • 提供了一种在擦除操作期间具有高冗余块故障的高可靠性的非易失性半导体存储装置,并且在其布局面积方面没有任何缺点。 存储器阵列是采用ACT存储单元MC的虚拟接地型存储器阵列。 冗余块35使用由连接到一个冗余字线RWL的一条线的ACT存储器单元MC构成的冗余扇区作为冗余单元。 然后,冗余块35和主块31形成在三重阱的不同p阱上,同时彼此电绝缘。 因此,通过仅在主块31的p阱施加负电压并且在擦除操作期间将冗余块35的p阱保持在零伏特,则冗余块35不被擦除。 此外,除了主块控制电路32之外,不需要提供源极线电平供应电路,使得在布局面积方面不会出现缺点。