专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20090108456A1 Solder-top Enhanced Semiconductor Device and Method for Low Parasitic Impedance Packaging 有权
标题翻译：焊接增强型半导体器件和低寄生阻抗封装方法
公开(公告)号：US20090108456A1
公开(公告)日：2009-04-30
申请号：US11932845
申请日：2007-10-31
申请人： Francois Hebert , Anup Bhalla , Kai Liu , Ming Sun
发明人： Francois Hebert , Anup Bhalla , Kai Liu , Ming Sun
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/40 , H01L23/4952 , H01L23/49562 , H01L23/64 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/05624 , H01L2224/29101 , H01L2224/29111 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/4103 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48472 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/83194 , H01L2224/83801 , H01L2224/84801 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01067 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/157 , H01L2924/181 , H01L2924/19043 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/37099
摘要： A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes: a) Lithographically patterning the top metal layer into the contact zones and the contact enhancement zones. b) Forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.
摘要翻译：提出了一种焊顶增强型半导体器件进行封装。焊料顶部器件包括具有图案化为接触区域和接触增强区域的顶部金属层的器件裸片。至少一个接触区域电连接到至少一个接触增强区域。每个接触增强区顶部都是一个焊料层，用于增加复合材料厚度，从而降低寄生阻抗。在顶部金属材料不能与焊料材料形成均匀的良好电接合的情况下，器件裸片还包括夹在中间层之间并与顶部金属层和焊料层形成均匀的电接合的中间层。用于制造焊料顶部器件的方法包括：a）将顶部金属层的光刻图案化成接触区域和接触增强区域。 b）使用用于增加复合材料厚度的模版工艺在每个接触增强区的顶部上形成焊料层。

82. 发明申请

US20080303606A1 Miniaturized Wide-Band Baluns for RF Applications 有权
标题翻译：用于射频应用的小型化宽带不平衡变压器
公开(公告)号：US20080303606A1
公开(公告)日：2008-12-11
申请号：US11760207
申请日：2007-06-08
申请人： Kai Liu , Robert Charles Frye
发明人： Kai Liu , Robert Charles Frye
IPC分类号： H03H7/42 , H01F7/06
CPC分类号： H03H7/42 , H01F17/0013 , H03H7/1775 , Y10T29/4902 , Y10T29/49071
摘要： A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between secondhand third portions of the third coil.
摘要翻译：宽带平衡 - 不平衡转换器包括沉积在衬底上并定向在第一线圈中的第一金属化。第一线圈水平延伸穿过衬底，同时保持基本平坦的垂直轮廓。第二金属化沉积在衬底上并定向在第二线圈中。第二线圈磁耦合到第一线圈，并且第二线圈的一部分定向在第一线圈的内部。第三金属化沉积在衬底上并定向在第三线圈中。第三线圈磁耦合到第一和第二线圈。第三线圈的第一部分位于第二线圈的内部。第三线圈具有在第三线圈的第二手第三部分之间连接到第三线圈的平衡端口。

83. 发明申请

US20080182387A1 Method of fabricating a semiconductor device employing electroless plating 有权
标题翻译：使用化学镀的半导体器件的制造方法
公开(公告)号：US20080182387A1
公开(公告)日：2008-07-31
申请号：US11701561
申请日：2007-01-31
申请人： Tao Feng , Ming Sun , Yueh-Se Ho , Kai Liu
发明人： Tao Feng , Ming Sun , Yueh-Se Ho , Kai Liu
IPC分类号： H01L21/00
CPC分类号： H01L21/67132 , H01L21/288 , H01L21/6836 , H01L24/02 , H01L24/11 , H01L2221/68327 , H01L2224/0401 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014
摘要： A method of fabricating a semiconductor device employing electroless plating including wafer backside protection during wet processing is disclosed. The method includes the steps of laminating a wafer back side and a frame with a protective tape, applying a protective coating to a peripheral portion of the wafer and an adjoining exposed area of the protective tape, the protective coating, protective tape, and wafer forming a protected wafer assembly, curing the frame-supported protective coating, cutting the protected wafer assembly from the protective tape surrounding the protective coating, wet processing the protected wafer assembly, laminating the protected wafer assembly with a second tape, dicing the wafer, and picking up the die from the protective tape.
摘要翻译：公开了一种在湿法处理中制造采用化学镀的半导体器件的方法，包括晶片背面保护。该方法包括以下步骤：将晶片背面和框架与保护带层压，将保护涂层施加到晶片的周边部分以及相邻的保护带的暴露区域，保护涂层，保护带和晶片成形保护的晶片组件，固化框架支撑的保护涂层，将保护的晶片组件从围绕保护涂层的保护带切割，湿处理受保护的晶片组件，用第二带层压受保护的晶片组件，切割晶片，以及拾取从保护胶带上取下模具。

84. 发明申请

US20070031299A1 Devices for manufacturing carbon nanotube arrays 有权
标题翻译：用于制造碳纳米管阵列的装置
公开(公告)号：US20070031299A1
公开(公告)日：2007-02-08
申请号：US11404522
申请日：2006-04-14
申请人： Kai-Li Jiang , Kai Liu , Shou-Shan Fan
发明人： Kai-Li Jiang , Kai Liu , Shou-Shan Fan
IPC分类号： B01J19/00 , B82B3/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/08
摘要： A device (20) for manufacturing a carbon nanotube array (10) includes a reaction chamber (220), a gas introducing tube (228), and a quartz boat (240). The reaction chamber includes a first gas inlet (222), a second gas inlet (224), and a gas outlet (226). The first gas inlet is configured for introducing a reaction gas, and the second gas inlet is configured for introducing a disturbance gas. The quartz boat is disposed in the reaction chamber. The quartz boat is used to carry a substrate (12) from/upon which the carbon nanotube array grows. The gas introducing tube is connected to the second gas inlet and to the quartz boat. The gas introducing tube is used to transport the disturbance gas introduced from the second gas inlet to the quartz boat to disturb/interrupt nanotube growth.
摘要翻译：用于制造碳纳米管阵列（10）的装置（20）包括反应室（220），气体导入管（228）和石英舟（240）。反应室包括第一气体入口（222），第二气体入口（224）和气体出口（226）。第一气体入口构造成用于引入反应气体，并且第二气体入口构造成用于引入扰动气体。石英舟设置在反应室中。石英舟用于承载碳纳米管阵列生长的基底（12）。气体导入管连接到第二气体入口和石英舟。气体导入管用于将从第二气体入口引入的干扰气体输送到石英舟，以扰乱/中断纳米管生长。

85. 发明授权

US07144562B2 Synthesis of LiBC and hole-doped Li1-xBC 失效
标题翻译： LiBC和空穴掺杂Li1-xBC的合成
公开(公告)号：US07144562B2
公开(公告)日：2006-12-05
申请号：US10718491
申请日：2003-11-19
申请人： Kai Liu , Peter Klavins , Limin Zhao
发明人： Kai Liu , Peter Klavins , Limin Zhao
IPC分类号： C01B35/00
CPC分类号： H01L39/24 , C01B32/907 , C04B35/56 , C04B35/563 , C04B35/65 , C04B35/653 , C04B2235/40 , C04B2235/421 , C04B2235/425 , C04B2235/661 , C04B2235/761 , C04B2235/767 , C04B2235/79
摘要： Methods are described for synthesizing stoichiometric LiBC and hole doped Li1-xBC (lithium borocarbide) according to heating processes, such as by both an arc-melting method and a sealed tantalum ampoule method. The arc-melting method requires forming a pellet of uniformly-mixed elemental lithium, boron, and graphite and subjecting it to an arc-melt process sufficient to trigger a self-propagating exothermic reaction. Alternatively, the titanium ampoule method requires sealing uniformly-mixed elemental lithium, boron, and graphite (Li—B—C) in a tantalum ampoule; and heating under sufficient temperature for a sufficient period of time. Hole-doped Li1-xBC (0≦x≦0.37) can then be produced, such as through vacuum de-intercalation from the LiBC. According to the present invention, the hexagonal crystal lattice remains largely intact, with only slight decreases in lattice parameters upon hole-doping. The samples are intrinsically diamagnetic and are semiconducting in the 2 K to 300 K range studied.
摘要翻译：描述了根据加热过程，例如通过电弧熔化法和密封的钽安瓿法合成化学计量的LiBC和掺杂锂的Li 1-x BC（硼氢化锂）的方法。电弧熔化法需要形成均匀混合的元素锂，硼和石墨的颗粒，并使其经受足够的电弧熔融过程以引发自扩散的放热反应。或者，钛安瓿方法需要在钽安瓿中密封均匀混合的元素锂，硼和石墨（Li-B-C）; 并在足够的温度下加热足够的时间。然后可以产生孔掺杂的Li 1-x BC（0 <= x <= 0.37），例如通过来自LiBC的真空去插入。根据本发明，六方晶格晶体基本保持完好，空穴掺杂时晶格参数仅略微降低。样品本质上是抗磁性的，并且在所研究的2K至300K范围内是半导体的。

86. 发明申请

US20060209876A1 Access point using directional antennas for uplink transmission in a WLAN 审中-公开
标题翻译：使用定向天线的接入点用于WLAN中的上行链路传输
公开(公告)号：US20060209876A1
公开(公告)日：2006-09-21
申请号：US11343397
申请日：2006-01-31
申请人： Kai Liu , Carl Wang , Arty Chandra , Jin Wang
发明人： Kai Liu , Carl Wang , Arty Chandra , Jin Wang
IPC分类号： H04L12/413
CPC分类号： H04W16/28 , H04B7/0695
摘要： An access point receives uplink transmissions from client stations using directional antenna beams. The directional antenna beams are generated by an antenna array. The different directional antenna beams are assigned beam identification numbers, and a preferred antenna beam is selected for each client station. The client stations in the different antenna beam regions initiate their uplink transmissions using assigned backoff slots within the contention window. The access point selects the preferred directional antenna beam corresponding to the directional antenna beams assigned to the backoff slots.
摘要翻译：接入点使用定向天线波束从客户端站接收上行链路传输。定向天线波束由天线阵列产生。不同的定向天线波束被分配波束识别号，并且为每个客户站选择优选的天线波束。不同天线波束区域中的客户站在竞争窗口内使用分配的退避时隙来发起其上行链路传输。接入点选择对应于分配给退避时隙的定向天线波束的优选定向天线波束。

87. 外观设计

USD935565S1 Kitchen faucet 有权
公开(公告)号：USD935565S1
公开(公告)日：2021-11-09
申请号：US29715510
申请日：2019-12-03
申请人： Kai Liu
设计人： Kai Liu

88. 发明授权

US10513049B2 Pump-type autoclave system and providing method for steam and pressure thereof 有权
公开(公告)号：US10513049B2
公开(公告)日：2019-12-24
申请号：US14414651
申请日：2014-11-02
申请人： Kai Liu
发明人： Kai Liu
IPC分类号： B28B11/24 , B01J3/04 , F22B1/00 , F22B33/18 , F24S90/00 , F24S10/40 , A61L2/07
摘要： The present invention discloses a pump-type autoclave system and a providing method for steam and pressure thereof, wherein the pump-type autoclave system comprises an autoclave, a steam providing device and a compressor, said steam providing device comprises a water storage container and a heating device used for heating said water storage container, said water storage container, the compressor and the autoclave are connected through a pipeline to form a closed loop, an inlet of the compressor is connected with a steam output port of the water storage container, an outlet of the compressor is connected to a steam input port of the autoclave, and a condensate water drain outlet of the autoclave is connected to the water storage container. The present invention uses the compressor to depressurize an intermediate-low temperature water source to obtain steam, and the steam is pumped into the autoclave and condensed to release heat to obtain corresponding temperature and pressure. Since the present invention fully utilizes a great amount of low-cost intermediate-low temperature heat sources obtained from natural, industrial or living waste heat to provide needed high temperature, steam and pressure to the autoclave system, the energy is saved.

89. 发明授权

US09571489B2 System and method for performing commands from a remote source 有权
标题翻译：用于从远程源执行命令的系统和方法
公开(公告)号：US09571489B2
公开(公告)日：2017-02-14
申请号：US13209212
申请日：2011-08-12
申请人： Nobukazu Sugiyama , Kai Liu , Ludovic Douillet , Lobrenzo Wingo
发明人： Nobukazu Sugiyama , Kai Liu , Ludovic Douillet , Lobrenzo Wingo
IPC分类号： H04L29/06 , G06F21/57
CPC分类号： H04L63/0853 , G06F21/572 , H04L63/083 , H04L63/168
摘要： According to one embodiment of the invention, a method for secured execution of commands is described. Initially, a second electronic device authenticates a first electronic device and registers the first electronic device as a trusted device. Thereafter, up receipt of a message with one or more embedded commands, such commands are executed without any pre-established communication protocol if the message is from the registered first electronic device.
摘要翻译：根据本发明的一个实施例，描述了用于安全执行命令的方法。最初，第二电子设备认证第一电子设备并将第一电子设备注册为可信设备。此后，如果消息来自注册的第一电子设备，则在没有任何预先建立的通信协议的情况下执行具有一个或多个嵌入式命令的消息的接收，这样的命令被执行。

90. 发明申请

US20150102425A1 FLIP CHIP CONTACT (FCC) POWER PACKAGE 审中-公开
标题翻译： FLIP CHIP CONTACT（FCC）电源封装
公开(公告)号：US20150102425A1
公开(公告)日：2015-04-16
申请号：US14052711
申请日：2013-10-12
申请人： Ming Sun , Kai Liu , Xiao Tian Zhang , Yueh Se Ho , Leeshawn Luo
发明人： Ming Sun , Kai Liu , Xiao Tian Zhang , Yueh Se Ho , Leeshawn Luo
IPC分类号： H01L23/495 , H01L29/78 , H01L29/66 , H01L23/00
CPC分类号： H01L23/49562 , H01L23/492 , H01L23/4928 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/83 , H01L24/97 , H01L29/66477 , H01L29/78 , H01L2224/291 , H01L2224/32245 , H01L2224/33181 , H01L2224/83205 , H01L2224/83801 , H01L2224/8385 , H01L2224/83895 , H01L2224/97 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2224/83 , H01L2924/014
摘要： A power device package for containing, protecting and providing electrical contacts for a power transistor includes a top and bottom lead frames for directly no-bump attaching to the power transistor. The power transistor is attached to the bottom lead frame as a flip-chip with a source contact and a gate contact directly no-bumping attaching to the bottom lead frame. The power transistor has a bottom drain contact attaching to the top lead frame. The top lead frame further includes an extension for providing a bottom drain electrode substantially on a same side with the bottom lead frame. In a preferred embodiment, the power device package further includes a joint layer between device metal of source, gate or drain and top or bottom lead frame, through applying ultrasonic energy.
摘要翻译：用于容纳，保护和提供用于功率晶体管的电触头的功率器件封装包括用于直接不连接到功率晶体管的顶部和底部引线框架。功率晶体管作为具有源极接触的倒装芯片附接到底部引线框架，并且栅极接触件直接地不连接到底部引线框架上。功率晶体管具有附接到顶部引线框架的底部漏极接触。顶部引线框架还包括用于提供与底部引线框架基本上在同一侧上的底部漏极电极的延伸部分。在优选实施例中，功率器件封装还包括通过施加超声波能量的源极，栅极或漏极以及顶部或底部引线框架的器件金属之间的接合层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式