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81. 发明授权

US07176041B2 PAA-based etchant, methods of using same, and resultant structures 有权
标题翻译：基于PAA的蚀刻剂，使用它的方法以及所得结构
公开(公告)号：US07176041B2
公开(公告)日：2007-02-13
申请号：US10976161
申请日：2004-10-29
申请人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
发明人： Hyo-san Lee , Hyung-ho Ko , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01L29/78696 , C09K13/08 , H01L21/30604 , H01L21/32134 , H01L21/32136 , H01L21/32137 , H01L21/823807 , H01L21/823828 , H01L27/10826 , H01L27/10852 , H01L28/91 , H01L29/42392 , H01L29/66772 , H01L29/66795 , H01L29/66818 , H01L29/785
摘要： A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
摘要翻译：湿蚀刻组合物可以包括：过乙酸（PAA）; 和氟化酸; 组合物中PAA的相对量足以确保与（N掺杂SiGe）的蚀刻速率基本相同的（P掺杂SiGe）:( P掺杂Si）的蚀刻速率：（N掺杂Si）。这种湿蚀刻组合物在下文中称为基于PAA的蚀刻剂，并且可以用于制造例如CMOS MBCFET，电容器的电极等

82. 发明申请

US20060269745A1 Nano wires and method of manufacturing the same 审中-公开
标题翻译：纳米线和制造方法相同
公开(公告)号：US20060269745A1
公开(公告)日：2006-11-30
申请号：US11362046
申请日：2006-02-27
申请人： Eun-kyung Lee , Byoung-Iyong Choi , Sang-jun Choi , Hoon Kim
发明人： Eun-kyung Lee , Byoung-Iyong Choi , Sang-jun Choi , Hoon Kim
IPC分类号： D02G3/00
CPC分类号： H01L21/0273 , H01L21/26533 , H01L21/31654 , H01L21/76243 , H01L33/20 , Y10T428/2913
摘要： The present invention provides a method of manufacturing nano wires and nano wires having a p-n junction structure. The method includes: stacking a mask layer on a substrate; patterning the mask layer into stripes; and performing an oxygen ion injection process on the substrate and the mask layer to form oxygen ion injection regions in the substrate, thereby forming nano wire regions embedded in the substrate and separated from the substrate by the oxygen ion injection regions.
摘要翻译：本发明提供一种制造具有p-n结结构的纳米线和纳米线的方法。该方法包括：在基板上层叠掩模层; 将掩模层图案化成条纹; 在基板和掩模层上进行氧离子注入处理，在基板上形成氧离子注入区域，由此形成嵌入到基板内的纳米线区域，并通过氧离子注入区域与基板分离。

83. 发明申请

US20060228890A1 Cleaning solution and method of forming a metal pattern for a semiconductor device using the same 审中-公开
标题翻译：清洗液和使用其形成半导体器件的金属图案的方法
公开(公告)号：US20060228890A1
公开(公告)日：2006-10-12
申请号：US11402028
申请日：2006-04-12
申请人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
发明人： Hyo-san Lee , Sang-yong Kim , Chang-ki Hong , Sang-jun Choi , Woo-gwan Shim , Im-soo Park , Kui-jong Baik , Woong Han , Jung-hun Lim , Sang-won Lee , Sung-bae Kim , Hyun-tak Kim
IPC分类号： C03C15/00 , H01L21/302 , B08B6/00 , C09K13/00
CPC分类号： H01L21/0206 , C09K13/08 , C23G1/10 , H01L21/02071
摘要： A cleaning solution includes acetic acid, an inorganic acid, a fluoride compound, and deionized water, and may further include a corrosion inhibitor, a chelating agent, or a combination thereof. The cleaning solution may be used in the formation of a metal pattern in which a metal film including ruthenium is formed on a surface of a substrate, and a portion of the metal film is dry-etched to form a metal film pattern. After dry-etching, the metal film pattern is cleaned with the cleaning solution to remove an etching by-product layer around the metal film pattern. The cleaning solution may also be used to remove an etching by-product layer around an oxide film pattern prior to dry-etching of the metal film.
摘要翻译：清洁溶液包括乙酸，无机酸，氟化物和去离子水，并且还可以包括腐蚀抑制剂，螯合剂或其组合。清洗液可用于形成在基材表面上形成包含钌的金属膜的金属图案，并且将金属膜的一部分干蚀刻以形成金属膜图案。在干蚀刻之后，用清洁溶液清洗金属膜图案以除去金属膜图案周围的蚀刻副产物层。在干蚀刻金属膜之前，还可以使用清洁溶液去除氧化膜图案周围的蚀刻副产物层。

84. 发明申请

US20050026078A1 Resist compositions including thermal crosslinking agents 审中-公开
标题翻译：抗蚀剂组合物包括热交联剂
公开(公告)号：US20050026078A1
公开(公告)日：2005-02-03
申请号：US10924484
申请日：2004-08-24
申请人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
发明人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
IPC分类号： G03F7/004 , C08K5/00 , C08K5/06 , C08K5/14 , C08K5/16 , C08K5/23 , C08L61/04 , G03F7/022 , G03F7/039 , G03F7/40 , H01L21/027 , G03C1/76
CPC分类号： G03F7/40
摘要： A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
摘要翻译：一种在半导体衬底中形成精细图案的方法，其中通过用光刻工艺将包含至少一种能形成光致抗蚀剂图案的化合物的抗蚀剂组合物涂覆在半导体衬底上的待蚀刻靶材层和自由基引发剂。自由基引发剂能够在等于或高于至少一种化合物的玻璃化转变温度的温度下被热处理分解。在抗蚀剂化合物层上进行光刻工艺以形成光致抗蚀剂图案。将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中发生抗蚀剂组合物中的部分交联反应。

85. 发明授权

US06833230B2 Photosensitive polymers containing adamantylalkyl vinyl ether, and resist compositions including the same 有权
标题翻译：含有金刚烷基烷基乙烯基醚的光敏聚合物和包含它们的抗蚀剂组合物
公开(公告)号：US06833230B2
公开(公告)日：2004-12-21
申请号：US10392931
申请日：2003-03-21
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： G03F7004
CPC分类号： C08F220/18 , C08F226/06 , G03F7/0395 , G03F7/0397 , G03G5/0542 , G03G5/0546 , G03G5/0553 , G03G5/0589 , G03G5/0592 , G03G5/0596 , Y10S430/111
摘要： A photosensitive polymer includes a copolymer containing adamantylalkyl vinyl ether, and a resist composition includes the photosensitive polymer. For example, the photosensitive polymer may include a copolymer having a formula: wherein x is an integer between 1 and 4 inclusive, R1 is a hydrogen atom or a methyl group, R2 is an acid-labile C4 to C20 hydrocarbon group, p/(p+q+r)=0.1 to 0.4, q/(p+q+r)=0.1 to 0.5, and r/(p+q+r)=0.1 to 0.4.
摘要翻译：光敏聚合物包括含有金刚烷基烷基乙烯基醚的共聚物，抗蚀剂组合物包括光敏聚合物。例如，光敏聚合物可以包括具有下式的共聚物：其中x是1和4之间的整数，其中R1是氢原子或甲基，R2是酸不稳定的C4至C20烃基，p /（ p + q + r）= 0.1〜0.4，q /（p + q + r）= 0.1〜0.5，r /（p + q + r）= 0.1〜0.4。

86. 发明授权

US06777162B2 Photosensitive polymer and photoresist composition thereof 失效
标题翻译：感光聚合物及其光致抗蚀剂组合物
公开(公告)号：US06777162B2
公开(公告)日：2004-08-17
申请号：US10227939
申请日：2002-08-26
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： G03F7038
CPC分类号： G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/115
摘要： A photosensitive polymer having a hydroxy alkyl vinyl ether monomer and a resist composition are provided. The photosensitive polymer includes an alkyl vinyl ether monomer having the formula, and the photosensitive polymer has a weight average molecular weight of 3,000 to 50,000: where x is an integer from 3 to 6 inclusive, R1 and R2 are independently alkyl having from 1 to 20 carbon atoms, fluorinated alkyl having from 1 to 10 carbon atoms or perfluoronated alkyl having from 1 to 10 carbon atoms.
摘要翻译：提供了具有羟基烷基乙烯基醚单体和抗蚀剂组合物的光敏聚合物。感光性高分子包括具有下式的烷基乙烯基醚单体，光敏性聚合物的重均分子量为3,000〜50,000，其中，x为3〜6的整数，R1和R2分别为1〜20的烷基碳原子，具有1至10个碳原子的氟化烷基或具有1至10个碳原子的全氟化烷基。

87. 发明授权

US06485895B1 Methods for forming line patterns in semiconductor substrates 失效
标题翻译：在半导体衬底中形成线图案的方法
公开(公告)号：US06485895B1
公开(公告)日：2002-11-26
申请号：US09533770
申请日：2000-03-23
申请人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
发明人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
IPC分类号： G03F740
CPC分类号： G03F7/40
摘要： A method for forming a fine pattern in a semiconductor substrate, comprises the steps of (a) coating a target layer to be etched on a semiconductor substrate with a resist composition comprising at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator, wherein the free radical initiator is one which is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound, wherein said coating step results in forming a resist compound layer comprising the resist composition; (b) performing a lithography process on the resist compound layer to form a photoresist pattern of at least one opening having a first width, wherein the target layer is exposed through the first width; and (c) heating the resist compound layer having the photoresist pattern formed therein to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs by the free radicals produced from the free radical initiator resulting in a modified photoresist pattern having at least one opening having a second width which exposes the target layer, wherein the second width is smaller than the first width.
摘要翻译：一种用于在半导体衬底中形成精细图案的方法，包括以下步骤：（a）用包含至少一种能够通过光刻工艺形成光致抗蚀剂图案的化合物的抗蚀剂组合物在半导体衬底上涂覆待蚀刻的靶层，和自由基引发剂，其中所述自由基引发剂是能够在等于或高于所述至少一种化合物的玻璃化转变温度的温度下通过热处理分解的引发剂，其中所述涂布步骤导致形成抗蚀剂化合物层，其包含抗蚀剂组合物; （b）对抗蚀剂化合物层进行光刻处理以形成具有第一宽度的至少一个开口的光致抗蚀剂图案，其中目标层通过第一宽度暴露; 和（c）将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中抗蚀剂组合物中的部分交联反应通过自由基由自由基引发剂产生的自由基导致具有至少一个具有暴露目标层的第二宽度的开口的改性光致抗蚀剂图案，其中第二宽度小于第一宽度。

88. 发明授权

US6143466A Chemically amplified photoresist composition 失效
标题翻译：化学扩增的光致抗蚀剂组合物
公开(公告)号：US6143466A
公开(公告)日：2000-11-07
申请号：US399164
申请日：1999-09-20
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： H01L21/027 , C08F210/14 , C08F222/06 , C08K5/16 , C08K5/17 , C08K5/42 , G03F7/004 , G03F7/039 , G03C1/73 , G03F7/029 , G03F7/033
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A chemically amplified photoresist composition, having a large etching resistance and excellent adhesion and contrast characteristics, includes a polymer represented by formula (1): ##STR1## wherein R.sub.1 is hydrogen, --OH, --COOH, or aliphatic hydrocarbon having a C.sub.1 -C.sub.20 polar functional group, R.sub.2 is a t-butyl group, a tetrahydropyranyl group or a 1-alkoxyethyl group, l, m and n are integers, l/(l+m+n) equals 0.0 to 0.4, m/(l+m+n) equals 0.5, n/(l+m+n) equals 0.1 to 0.5, and the weight average molecular weight of the polymer is in the range of 3,000 to 100,000.
摘要翻译：具有耐腐蚀性大且粘附性和对比度特性优异的化学放大型光致抗蚀剂组合物包括由式（1）表示的聚合物：其中R1是氢，-OH，-COOH或具有C1-C20极性官能团的脂族烃，R2是叔丁基，四氢吡喃基或1-烷氧基乙基，l，m和n是整数，l /（1 + m + n）等于0.0〜0.4，m /（1 + m + n）等于0.5，n /（1 + m + n）等于0.1至0.5，聚合物的重均分子量在3,000至100,000的范围内。

89. 发明授权

US6143465A Photosensitive polymer having cyclic backbone and resist composition comprising same 失效
标题翻译：具有环状骨架的光敏聚合物和包含其的抗蚀剂组合物
公开(公告)号：US6143465A
公开(公告)日：2000-11-07
申请号：US349159
申请日：1999-07-08
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： G03F7/004 , C08F222/06 , C08F232/08 , G03F7/031 , G03F7/039 , C08F10/00
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A photosensitive polymer represented by the following formula, and a resist composition including (a) a photosensitive polymer represented by the following formula: ##STR1## where R.sub.1 is a C.sub.1 to C.sub.20 aliphatic hydrocarbon, R.sub.2 is t-butyl, tetrahydropyranyl or 1-alkoxy ethyl, 1/(1+m+n) is from 0.0 to about 0.4, m/(1+m+n) is 0.5, and n/(1+m+n) is from about 0.1 to about 0.5, and (b) a photoacid generator (PAG).
摘要翻译：由下式表示的光敏聚合物和抗蚀剂组合物，其包含（a）由下式表示的感光性高分子：其中R1为C1〜C20脂肪族烃，R2为叔丁基，四氢吡喃基或1-烷氧基乙基，1 /（1 + m + n）为0.0〜约0.4，m /（1 + m + n）为0.5，n /（1 + m + n）为约0.1〜约0.5，（b）光致酸发生器（PAG）。

90. 发明授权

US6083659A Polymer mixture for photoresist and photoresist composition containing the same 失效
标题翻译：用于光致抗蚀剂和含有其的光致抗蚀剂组合物的聚合物混合物
公开(公告)号：US6083659A
公开(公告)日：2000-07-04
申请号：US218028
申请日：1998-12-22
申请人： Sang-jun Choi
发明人： Sang-jun Choi
IPC分类号： H01L21/027 , C08L25/00 , C08L25/18 , C08L33/04 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , C08L25/18 , Y10S430/111
摘要： A polymer mixture for a photoresist composition, and a photoresist composition containing the polymer mixture. The polymer mixture includes a polymer that has two or more different monomers and an acid-labile di-alkylmalonate group bound to the backbone of the polymer; a polymer that has a monomer of (meth)acrylate derivative and one or more other monomers; or a polymer that has a monomer of alkoxystyrene and one or more other monomers. The polymer mixtures are suitable for forming photoresist compositions that generate a pattern having an excellent profile, due to the high contrast and high thermal decomposition temperature of the photoresist composition. The photoresist composition of the present invention further include a photosensitive acid generator.
摘要翻译：用于光致抗蚀剂组合物的聚合物混合物和含有聚合物混合物的光致抗蚀剂组合物聚合物混合物包括具有两个或多个不同单体的聚合物和与聚合物的主链结合的酸不稳定的二烷基丙二酸酯基团; 具有（甲基）丙烯酸酯衍生物单体和一种或多种其它单体的聚合物; 或具有烷氧基苯乙烯和一种或多种其它单体的单体的聚合物。由于光致抗蚀剂组合物的高对比度和高热分解温度，聚合物混合物适用于形成具有优异外形的图案的光致抗蚀剂组合物。本发明的光致抗蚀剂组合物还包括光敏酸发生剂。

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