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81. 发明授权

US07722942B2 Ag base alloy thin film and sputtering target for forming Ag base alloy thin film 有权
公开(公告)号：US07722942B2
公开(公告)日：2010-05-25
申请号：US11401853
申请日：2006-04-12
申请人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
发明人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
IPC分类号： B32B3/02
CPC分类号： C22C5/06 , C22C1/002 , C22C5/08 , C23C14/024 , C23C14/185 , C23C14/205 , C23C14/3414 , C23C14/584 , G02B5/0808 , G11B7/252 , G11B7/2531 , G11B7/257 , G11B7/258 , G11B7/259 , G11B7/266 , Y10T428/10 , Y10T428/1059 , Y10T428/1095 , Y10T428/12 , Y10T428/12431 , Y10T428/12896 , Y10T428/12924 , Y10T428/21 , Y10T428/265 , Y10T428/31678
摘要： The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

82. 发明申请

US20100038233A1 AG-BI-BASE ALLOY SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译： AG-BI-BASE合金喷射靶及其制造方法
公开(公告)号：US20100038233A1
公开(公告)日：2010-02-18
申请号：US12604858
申请日：2009-10-23
申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Toshiki Sato , Hitoshi Matsuzaki , Hideo Fujii
IPC分类号： C23C14/34 , C21D9/00
CPC分类号： C22C5/06 , C23C14/3414
摘要： The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %−1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89 % or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.
摘要翻译：由Ag-Bi基合金制成的溅射靶包含Bi的Bi与Ag的固溶体。溅射靶的沉积Bi强度为0.01at％-1以下，根据X射线衍射的分析结果通过以下数学式（1）计算，和/或预定强度的面积比（ 8个强度的第三至第六强度）为89％以上，其中，通过根据X射线微量分析计算Bi的特征X射线强度的平面分布来获得面积比：沉淀Bi = [IBi（102） / IAg（111）+ IAg（200）+ IAg（220）+ IAg（311））] / [Bi]。通过使用溅射靶可以抑制所得膜中Bi含量的产率的显着降低。

83. 发明申请

US20090035602A1 HIGH-STRENGTH STEEL WITH EXCELLENT UNSUSCEPTIBILITY TO HYDROGEN EMBRITTLEMENT 有权
标题翻译：高强度不稳定性高强度钢的高强度钢
公开(公告)号：US20090035602A1
公开(公告)日：2009-02-05
申请号：US11994436
申请日：2007-01-15
申请人： Wataru Urushihara , Toshiki Sato , Nao Yoshihara
发明人： Wataru Urushihara , Toshiki Sato , Nao Yoshihara
IPC分类号： B32B15/00 , C22C38/18 , C22C38/40 , C22C38/42
CPC分类号： C25D9/10 , B21C37/04 , C21D6/002 , C21D8/005 , C21D9/02 , C21D9/32 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/22 , C22C38/24 , C22C38/28 , C22C38/34 , Y10S148/908 , Y10T428/1266 , Y10T428/12972
摘要： A high-strength steel excellent in hydrogen embrittlement resistance is provided. The high-strength steel of the present invention excellent in hydrogen embrittlement resistance has a tensile strength of 1800 N/mm2 or above, contains 0.3 to 0.7% (percent by mass) C, 0.95 to 5.0% Cr, not higher than 0.6% and higher than 0% Mn, and 0.7 to 2.5% Si, and contains at least one of Mg, Ca, Sr, Ba, Li, Na and K so as to meet the following conditions: (1) the upper limits of the Mg, the Ca, the Sr, the Ba, the Li, the Na and the K content are 0.05%, and (2) the Mg, the Ca, the Sr, the Ba, the Li, the Na and the K content meet Expression (1): Cr + Mn 4 ≤ 1000 × [ Ca + Mg + Sr + Ba 2 + Li + Na + K 8 ] ( 1 )
摘要翻译：提供了耐氢脆性优异的高强度钢。耐氢脆性优异的本发明的高强度钢的拉伸强度为1800N / mm 2以上，含有0.3〜0.7％（质量％）C，0.95〜5.0％Cr，不高于0.6％，高于0％的Mn和0.7〜2.5％的Si，并且含有Mg，Ca，Sr，Ba，Li，Na和K中的至少一种，以满足以下条件：（1）Mg， Ca，Sr，Ba，Li，Na和K含量均为0.05％，（2）Mg，Ca，Sr，Ba，Li，Na和K含量均满足表达式 1）： $\begin{matrix} Cr+4<=> 1000 x[Ca+Mg + > > > mn> +Li+Namo>K8]mrow> （1） \end{matrix}$

84. 发明申请

US20070140719A1 Image forming apparatus 有权
标题翻译：图像形成装置
公开(公告)号：US20070140719A1
公开(公告)日：2007-06-21
申请号：US11510614
申请日：2006-08-28
申请人： Toshiki Sato
发明人： Toshiki Sato
IPC分类号： G03G15/20
CPC分类号： G03G15/2039
摘要： The aim of the present invention is to provide an image forming apparatus that accurately detects surface temperature of a rotating body using a noncontact temperature detection section and corrects the detected temperature according to the temperature of the surrounding area. The present invention detects the temperature of a thermal unit and the temperature of a holding unit and corrects the temperature of the thermal unit based on the temperature of the holding unit so that effects from the temperature of a surrounding area can be corrected and the temperature can accurately be detected without scarring a surface of the rotating body. Accurate regulation of the surface temperature of the rotating body can therefore be performed.
摘要翻译：本发明的目的是提供一种使用非接触温度检测部分精确地检测旋转体的表面温度并根据周围区域的温度校正检测温度的图像形成装置。本发明检测热单元的温度和保持单元的温度，并且基于保持单元的温度校正热单元的温度，从而可以校正来自周围区域的温度的影响，并且温度可以准确地检测到旋转体的表面没有疤痕。因此可以精确地调节旋转体的表面温度。

85. 发明申请

US20060182991A1 Ag base alloy thin film and sputtering target for forming Ag base alloy thin film 有权
公开(公告)号：US20060182991A1
公开(公告)日：2006-08-17
申请号：US11401853
申请日：2006-04-12
申请人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
发明人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
IPC分类号： C09K19/00 , B32B3/02 , B32B15/04 , C22C5/06 , B32B15/01 , B32B9/00 , B32B19/00
CPC分类号： C22C5/06 , C22C1/002 , C22C5/08 , C23C14/024 , C23C14/185 , C23C14/205 , C23C14/3414 , C23C14/584 , G02B5/0808 , G11B7/252 , G11B7/2531 , G11B7/257 , G11B7/258 , G11B7/259 , G11B7/266 , Y10T428/10 , Y10T428/1059 , Y10T428/1095 , Y10T428/12 , Y10T428/12431 , Y10T428/12896 , Y10T428/12924 , Y10T428/21 , Y10T428/265 , Y10T428/31678
摘要： The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

86. 发明申请

US20060171842A1 Ag base alloy thin film and sputtering target for forming Ag base alloy thin film 审中-公开
公开(公告)号：US20060171842A1
公开(公告)日：2006-08-03
申请号：US11395227
申请日：2006-04-03
申请人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
发明人： Yuuki Tauchi , Katsutoshi Takagi , Junichi Nakai , Toshiki Sato
IPC分类号： C22C5/06
CPC分类号： C22C5/06 , C22C1/002 , C22C5/08 , C23C14/024 , C23C14/185 , C23C14/205 , C23C14/3414 , C23C14/584 , G02B5/0808 , G11B7/252 , G11B7/2531 , G11B7/257 , G11B7/258 , G11B7/259 , G11B7/266 , Y10T428/10 , Y10T428/1059 , Y10T428/1095 , Y10T428/12 , Y10T428/12431 , Y10T428/12896 , Y10T428/12924 , Y10T428/21 , Y10T428/265 , Y10T428/31678
摘要： The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

87. 发明授权

US07075674B2 Image recording apparatus 有权
标题翻译：图像记录装置
公开(公告)号：US07075674B2
公开(公告)日：2006-07-11
申请号：US09783011
申请日：2001-02-15
申请人： Akira Nagumo , Toshiki Sato
发明人： Akira Nagumo , Toshiki Sato
IPC分类号： G06F15/00
CPC分类号： G06K15/1247
摘要： When correction data is set, a CPU 3 reads out the correction data from an EEPROM 8 through strobe signal lines STB1-N to STB4-N and supplies it as print data signals DATA3 to DATA0 to an LED driver IC 6. When the driving of an LED array 7 according to print data is instructed, the CPU 3 supplies a group selection signal to the LED array 7 through the strobe signal lines STB1-N to STB4-N. An electrophotographic printer which can realize a high speed of the operation and contribute to the improvement of the reliability is provided.
摘要翻译：当校正数据被设置时，CPU 3通过选通信号线STB 1 -N至STB 4 -N从EEPROM 8中读出校正数据，并将其作为打印数据信号DATA3至DATA0提供给LED驱动器IC6。当指示根据打印数据驱动LED阵列7时，CPU 3通过选通信号线STB 1 -N至STB 4 -N向LED阵列7提供组选择信号。提供一种可以实现高速操作并有助于提高可靠性的电子照相打印机。

88. 发明授权

US6112805A Continuous casting mold for billet 失效
标题翻译：坯料连铸模具
公开(公告)号：US6112805A
公开(公告)日：2000-09-05
申请号：US473085
申请日：1999-12-28
申请人： Masatsugu Uehara , Toshiki Sato , Teruo Fujinaga , Kazutoki Nakao
发明人： Masatsugu Uehara , Toshiki Sato , Teruo Fujinaga , Kazutoki Nakao
IPC分类号： B22D11/053 , B22D11/059 , B22D11/051
CPC分类号： B22D11/055 , B22D11/053 , B22D11/059
摘要： Recess portions each comprising one or a plurality of transverse grooves or a large number of dimples are disposed below the lowermost position of a meniscus under a steady operation state within a distance of 200 mm on the inner peripheral surface of the casting mold so that a solidified shell is gradually cooled and the cooling capacity of each inner surface of the casting mold is substantially inform.
摘要翻译：在铸模的内周面上的距离为200mm的稳定运行状态下，在弯液面的最下位置的下方配置有包含一个或多个横槽或多个凹部的凹部，壳体逐渐冷却，并且浇铸模具的每个内表面的冷却能力基本上被通知。

89. 发明申请

US20110220903A1 REFLECTIVE ANODE AND WIRING FILM FOR ORGANIC EL DISPLAY DEVICE 有权
标题翻译：有机EL显示装置的反射阳极和布线
公开(公告)号：US20110220903A1
公开(公告)日：2011-09-15
申请号：US13128415
申请日：2009-11-09
申请人： Yuuki Tauchi , Mototaka Ochi , Toshiki Sato
发明人： Yuuki Tauchi , Mototaka Ochi , Toshiki Sato
IPC分类号： H01L33/12 , H01B5/00 , H01L33/08 , C23C14/14 , C23C14/34
CPC分类号： H01L51/5218 , H01B1/02 , H01L27/3244 , H01L2251/5315 , H05B33/26 , Y10T428/12896 , Y10T428/31678
摘要： To avoid a phenomenon of deterioration which is characteristic to an organic EL display device, such as a dark spot, without forming a pin hole in an organic material used for forming an organic EL layer. A reflective anode for an organic EL display device includes: an Ag-based alloy film (6) containing 0.01 to 1.5 atomic % of Nd and formed on a substrate (1); and an oxide conductive film (7) formed on the Ag-based alloy film (6) and in direct contact with the film (6).
摘要翻译：为了避免在用于形成有机EL层的有机材料中没有形成针孔的有机EL显示装置（例如暗点）的特征的劣化现象。用于有机EL显示装置的反射性阳极包括：在基板（1）上形成含有0.01〜1.5原子％的Nd的Ag系合金膜（6）以及形成在所述Ag基合金膜（6）上并与所述膜（6）直接接触的氧化物导电膜（7）。

90. 发明授权

US07776393B2 Methods of producing an alumina film mainly in alpha crystal structure and the multilayer film thereof 有权
标题翻译：以α晶体结构主要生产氧化铝膜的方法及其多层膜
公开(公告)号：US07776393B2
公开(公告)日：2010-08-17
申请号：US10551993
申请日：2004-03-22
申请人： Hiroshi Tamagaki , Toshimitsu Kohara , Toshiki Sato
发明人： Hiroshi Tamagaki , Toshimitsu Kohara , Toshiki Sato
IPC分类号： C23C16/00 , B05D1/12 , B05D7/00 , C23C14/00
CPC分类号： C23C30/00 , C23C14/024 , C23C14/028 , C23C14/081 , C23C28/042 , C23C28/044
摘要： Provided is a method of producing an alumina film mainly in alpha crystal structure superior in heat resistance, wherein the alumina film mainly in alpha crystal structure is formed on a substrate, independently of the kind of the substrate at relatively low temperature, by treating the substrate surface with a ceramic powder mainly having the crystal structure same as that of alumina in the alpha crystal structure, in forming the alumina film mainly in alpha crystal structure on the substrate (including the substrate having a film previously formed thereon).
摘要翻译：本发明提供一种主要以耐热性优异的α晶体结构的氧化铝膜的制造方法，其中主要以α晶体结构形成的氧化铝膜与基板的种类相对，在相对较低的温度下形成在基板上，通过处理基板在主要具有与α晶体结构中的氧化铝相同的晶体结构的陶瓷粉末的表面上，主要以基板上的α晶体结构（包括其上预先形成有膜的基板）形成氧化铝膜。

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