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81. 发明授权

US07198888B2 Water-soluble material, chemically amplified resist and pattern formation method using the same 有权
公开(公告)号：US07198888B2
公开(公告)日：2007-04-03
申请号：US11013333
申请日：2004-12-17
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20 , G03F7/30 , G03F7/09 , G03C1/76
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0392 , G03F7/095
摘要： A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.

82. 发明申请

US20060289849A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 审中-公开
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US20060289849A1
公开(公告)日：2006-12-28
申请号：US11512968
申请日：2006-08-29
申请人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
发明人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L29/04
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention includes a semiconductor device. Specifically provided is a semiconductor device comprising a porous film therein, the porous film being formable by a composition comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1) : RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.
摘要翻译：本发明包括半导体器件。具体提供的是其中包含多孔膜的半导体器件，多孔膜可通过包含表面活性剂，非质子极性溶剂和包含由一个或多个由下列物质表示的硅烷化合物的水解和缩合形成的聚合物（1 ）：R n Si（OR'）4-n 还提供了一种制造多孔膜的方法，包括以下步骤：施加所述组合物以形成膜，干燥膜并通过除去所述表面活性剂将干燥的膜转化为多孔膜。进一步提供由多孔膜形成用组合物得到的多孔膜。

83. 发明授权

US07135273B2 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US07135273B2
公开(公告)日：2006-11-14
申请号：US10713217
申请日：2003-11-17
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0382 , G03F7/0046 , G03F7/0392 , G03F7/2041
摘要： After forming a resist film of a chemically amplified resist material, pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, a solution including a basic compound. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
摘要翻译：在形成化学放大抗蚀剂材料的抗蚀剂膜之后，通过在向抗蚀剂膜上提供包含碱性化合物的溶液的同时，通过曝光来选择性地照射抗蚀剂膜来进行图案曝光。在图案曝光之后，对抗蚀剂膜进行曝光后烘烤，然后用碱性显影剂显影。因此，可以形成由抗蚀剂膜的未曝光部分制成的抗蚀图案，形状良好。

84. 发明授权

US07132224B2 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US07132224B2
公开(公告)日：2006-11-07
申请号：US10661542
申请日：2003-09-15
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0048 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/2041
摘要： After forming a resist film of a chemically amplified resist material including a base polymer, an acid generator for generating an acid through irradiation with light and lactone, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
摘要翻译：在形成包含基础聚合物的化学放大抗蚀剂材料的抗蚀剂膜之后，通过照射光和内酯产生酸的酸发生剂，通过在将抗蚀剂膜供给到抗蚀剂膜上的同时选择性地照射抗蚀剂膜来进行图案曝光，循环并临时储存在溶液储存器中的水。在图案曝光之后，对抗蚀剂膜进行曝光后烘烤，然后用碱性显影剂显影。因此，可以形成由抗蚀剂膜的未曝光部分制成的抗蚀图案，形状良好。

85. 发明授权

US07119354B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film 失效
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜
公开(公告)号：US07119354B2
公开(公告)日：2006-10-10
申请号：US10810360
申请日：2004-03-26
申请人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
发明人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L47/00
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： Provided is a coating liquid which can easily form a porous film having desirably controlled thickness by the method used for a usual semiconductor process, and having an excellent mesopore channel structure. Specifically provided is a composition for forming porous film comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1): RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.
摘要翻译：本发明提供一种可以通过通常的半导体工艺使用的方法容易地形成具有期望的控制厚度的多孔膜并具有优异的中孔通道结构的涂布液。具体地提供了一种用于形成多孔膜的组合物，其包含表面活性剂，非质子极性溶剂和包含通过水解和缩合由（1）表示的一种或多种硅烷化合物形成的聚合物的溶液：RnSi（OR'）4 -n 。还提供了一种制造多孔膜的方法，包括以下步骤：施加所述组合物以形成膜，干燥膜并通过除去所述表面活性剂将干燥的膜转化为多孔膜。进一步提供由多孔膜形成用组合物得到的多孔膜。

86. 发明申请

US20060202356A1 Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device 审中-公开
公开(公告)号：US20060202356A1
公开(公告)日：2006-09-14
申请号：US11431000
申请日：2006-05-10
申请人： Hideo Nakagawa , Masaru Sasago
发明人： Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/48
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/312 , H01L21/316 , H01L21/31695 , H01L23/5222 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2221/1047 , H01L2224/04042 , H01L2224/05093 , H01L2224/05556 , H01L2224/05599 , H01L2224/27416 , H01L2224/451 , H01L2224/48463 , H01L2224/85424 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01074 , H01L2924/12044 , H01L2224/45099 , H01L2924/00
摘要： A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent.

87. 发明授权

US07094521B2 Pattern formation method and exposure system 有权
公开(公告)号：US07094521B2
公开(公告)日：2006-08-22
申请号：US10640061
申请日：2003-08-14
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/00 , G03F7/20
CPC分类号： G03F7/2041
摘要： After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

88. 发明申请

US20060160032A1 Pattern formation method and exposure system 审中-公开
标题翻译：图案形成方法和曝光系统
公开(公告)号：US20060160032A1
公开(公告)日：2006-07-20
申请号：US11376188
申请日：2006-03-16
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/00
CPC分类号： G03F7/2041
摘要： After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
摘要翻译：在形成由化学放大抗蚀剂材料制成的抗蚀剂膜之后，通过在曝光光下照射抗蚀剂膜，同时在投影透镜和抗蚀剂膜之间提供水（折射率为1.44）的溶液来进行图案曝光，其包括消泡剂并且循环并临时储存在溶液储存器中。在图案曝光之后，对抗蚀剂膜进行曝光后烘烤，并且用碱性显影剂使得到的抗蚀剂膜显影。因此，可以形成由抗蚀剂膜的未曝光部分制成的抗蚀图案，形状良好。

89. 发明申请

US20060127812A1 Barrier film material and pattern formation method using the same 有权
标题翻译：阻挡膜材料和图案形成方法使用相同
公开(公告)号：US20060127812A1
公开(公告)日：2006-06-15
申请号：US11224980
申请日：2005-09-14
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C5/00
CPC分类号： G03F7/38 , G03F7/11 , G03F7/2041 , Y10S430/162
摘要： A resist film is first formed on a substrate. Subsequently, a barrier film including a basic compound of, for example, dicyclohexylamine is formed on the resist film. Thereafter, with an immersion liquid including cesium sulfate provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Then, after removing the barrier film, the resist film having been subjected to the pattern exposure is developed, so as to form a resist pattern in a good shape.
摘要翻译：首先在基板上形成抗蚀剂膜。随后，在抗蚀剂膜上形成包含例如二环己胺的碱性化合物的阻挡膜。此后，通过设置在阻挡膜上的包含硫酸铯的浸渍液，通过选择性地照射抗蚀剂膜，通过阻挡膜曝光光来进行图案曝光。然后，在除去阻挡膜之后，对经过图案曝光的抗蚀剂膜进行显影，以形成具有良好形状的抗蚀剂图案。

90. 发明授权

US07029827B2 Pattern formation method 失效
标题翻译：图案形成方法
公开(公告)号：US07029827B2
公开(公告)日：2006-04-18
申请号：US10610920
申请日：2003-07-02
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C5/00
CPC分类号： G03F7/26 , G03F7/168
摘要： After forming a resist film from a positive chemically amplified resist material, an insolubilization treatment for making the surface of the resist film insoluble in a developer is carried out. After the insolubilization treatment, pattern exposure is performed by selectively irradiating the resist film with exposing light. Thereafter, the resist film is developed so as to form a resist pattern made of an unexposed portion of the resist film.
摘要翻译：在由正性化学放大抗蚀剂材料形成抗蚀剂膜之后，进行用于使抗蚀剂膜的表面不溶于显影剂的不溶解处理。在不溶解处理之后，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。此后，抗蚀剂膜被显影以形成由抗蚀剂膜的未曝光部分制成的抗蚀剂图案。

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