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81. 发明授权

US06835675B2 Laser-irradiation method and laser-irradiation device 失效
标题翻译：激光照射方法和激光照射装置
公开(公告)号：US06835675B2
公开(公告)日：2004-12-28
申请号：US10316605
申请日：2002-12-10
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2126
CPC分类号： G10L17/22 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H04M3/2281 , H04M3/229 , H04M3/382 , H04M3/385 , H04M2201/40 , H04Q3/0016
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
摘要翻译：一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。还要求保护的是实现上述方法的激光照射装置。

82. 发明授权

US06710410B2 Hybrid circuit and electronic device using same 有权
公开(公告)号：US06710410B2
公开(公告)日：2004-03-23
申请号：US10353164
申请日：2003-01-27
申请人： Shunpei Yamazaki , Satoshi Teramoto
发明人： Shunpei Yamazaki , Satoshi Teramoto
IPC分类号： H01L2972
CPC分类号： H01L27/13 , H01L27/0688 , H01L27/1203 , H01L27/124 , H01L29/78621 , H03H9/0547
摘要： There is disclosed a hybrid circuit in which a circuit formed by TFTs is integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz substrate. The TFTs are connected with the ceramic filter via the terminals. Thus, an RF module is constructed.

83. 发明授权

US06613613B2 Thin film type monolithic semiconductor device 失效
标题翻译：薄膜型单片半导体器件
公开(公告)号：US06613613B2
公开(公告)日：2003-09-02
申请号：US09726336
申请日：2000-12-01
申请人： Shunpei Yamazaki , Satoshi Teramoto
发明人： Shunpei Yamazaki , Satoshi Teramoto
IPC分类号： C21
CPC分类号： H01L21/02672 , G02F1/13454 , H01L21/02532 , H01L21/2026 , H01L27/1229 , H01L29/78654
摘要： A monolithic type active matrix semiconductor device comprises a substrate having an insulating surface, a first plurality of thin film transistors formed on the substrate, each having a first channel region comprising an amorphous silicon semiconductor film, and a second plurality of thin film transistors, each having a second channel region comprising a crystalline semiconductor film. The crystalline semiconductor film of the second plurality of thin film transistors has a substantially single crystalline structure (mono-domain structure) and is doped with a recombination center neutralizer at a concentration of 1×1016 to 1×1020 atoms/cm3. The crystalline semiconductor film of the second plurality of thin film transistors contains a catalyst element which is capable of promoting crystallization of silicon.
摘要翻译：单片型有源矩阵半导体器件包括具有绝缘表面的衬底，形成在衬底上的第一多个薄膜晶体管，每个具有包括非晶硅半导体膜的第一沟道区和第二多个薄膜晶体管，具有包括晶体半导体膜的第二沟道区。第二多个薄膜晶体管的结晶半导体膜具有基本上单晶结构（单畴结构），并且掺杂有浓度为1×10 16至1×10 10原子/ cm 3的复合中心中和剂。第二多个薄膜晶体管的结晶半导体膜包含能够促进硅结晶的催化剂元件。

84. 发明授权

US06587277B2 Apparatus and method for laser radiation 有权
公开(公告)号：US06587277B2
公开(公告)日：2003-07-01
申请号：US10024855
申请日：2001-12-18
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.

85. 发明授权

US06551934B2 Process for fabricating semiconductor device and apparatus for fabricating semiconductor device 有权
标题翻译：用于制造半导体器件的工艺和用于制造半导体器件的设备
公开(公告)号：US06551934B2
公开(公告)日：2003-04-22
申请号：US09866322
申请日：2001-05-24
申请人： Shunpei Yamazaki , Satoshi Teramoto
发明人： Shunpei Yamazaki , Satoshi Teramoto
IPC分类号： H01L21302
CPC分类号： H01L21/768 , B23H5/08 , H01L21/31053 , H01L21/32125 , H01L21/76819 , H01L21/7684
摘要： A process for fabricating a semiconductor device having a multilayer wiring, comprising steps of: forming a first wiring or electrode on a substrate; forming an insulating film which covers the first wiring or electrode; forming a contact hole to the first wiring or electrode through the insulating film; forming a wiring for contacting the first wiring or electrode inside the contact hole; and removing the protruded portion of the contact wiring and flattening the insulating film at the same time in an electrolytic solution by means of chemical mechanical polishing using the contact wiring as the anode. Also claimed is an apparatus for polishing the surface of a semiconductor device during its fabricating the device, comprising: means for performing chemicomechanical polishing; and means for supplying electric current to the electrode of the semiconductor device.
摘要翻译：一种制造具有多层布线的半导体器件的方法，包括以下步骤：在衬底上形成第一布线或电极; 形成覆盖所述第一布线或电极的绝缘膜; 通过绝缘膜向第一布线或电极形成接触孔; 形成用于使接触孔内的第一布线或电极接触的布线; 并且通过使用接触布线作为阳极的化学机械抛光，除去接触布线的突出部分并同时在电解液中使绝缘膜平坦化。还要求保护的是在制造该器件期间抛光半导体器件的表面的装置，包括：用于进行化学机械抛光的装置; 以及用于向半导体器件的电极提供电流的装置。

86. 发明授权

US06441965B2 Laser irradiation apparatus 失效
公开(公告)号：US06441965B2
公开(公告)日：2002-08-27
申请号：US09932769
申请日：2001-08-16
申请人： Shunpei Yamazaki , Koichiro Tanaka , Satoshi Teramoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Satoshi Teramoto
IPC分类号： G02B2710
CPC分类号： G02B27/0905 , B23K26/0604 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/067 , B23K2101/40 , G02B27/09 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01S3/005 , H01S5/4025
摘要： There are disposed two homogenizers for controlling an irradiation energy density in the longitudinal direction of a laser light transformed into a linear one which is inputtted into the surface to be irradiated. Also, there is disposed one homogenizer for controlling an irradiation energy density in a width direction of the linear laser light. According to this, the uniformity of laser annealing can be improved by the minimum number of homogenizers.

87. 发明授权

US06388812B2 Apparatus and method for laser radiation 失效
标题翻译：用于激光辐射的装置和方法
公开(公告)号：US06388812B2
公开(公告)日：2002-05-14
申请号：US09812360
申请日：2001-03-19
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
摘要翻译：通过激光束的辐射对具有大面积的硅膜进行的退火的均匀性提供了改进。在将线性激光束施加到被照射面的构造中，对形成均匀器103,104的圆柱透镜的宽度和数量进行优化，以控制线束的纵向辐射能量密度分布。例如，形成均化器103和104的圆柱形透镜的宽度设定在0.1mm至5mm的范围内，并且选择透镜的数量使得沿着每5mm-15mm设置一个透镜线性激光束的长度方向的长度。这使得可以提高线性激光器在其纵向方向上的辐射能量密度的均匀性。

88. 发明授权

US06242343B1 Process for fabricating semiconductor device and apparatus for fabricating semiconductor device 失效
标题翻译：用于制造半导体器件的工艺和用于制造半导体器件的设备
公开(公告)号：US06242343B1
公开(公告)日：2001-06-05
申请号：US08794879
申请日：1997-02-05
申请人： Shunpei Yamazaki , Satoshi Teramoto
发明人： Shunpei Yamazaki , Satoshi Teramoto
IPC分类号： H01L214763
CPC分类号： H01L21/768 , B23H5/08 , H01L21/31053 , H01L21/32125 , H01L21/76819 , H01L21/7684
摘要： A process for fabricating a semiconductor device having a multilayer wiring, comprising steps of: forming a first wiring or electrode on a substrate; forming an insulating film which covers the first wiring or electrode; forming a contact hole to the first wiring or electrode through the insulating film; forming a wiring for contacting the first wiring or electrode inside the contact hole; and removing the protruded portion of the contact wiring and flattening the insulating film at the same time in an electrolytic solution by means of chemical mechanical polishing using the contact wiring as the anode. Also claimed is an apparatus for polishing the surface of a semiconductor device during its fabricating the device, comprising: means for performing chemicomechanical polishing; and means for supplying electric current to the electrode of the semiconductor device.
摘要翻译：一种制造具有多层布线的半导体器件的方法，包括以下步骤：在衬底上形成第一布线或电极; 形成覆盖所述第一布线或电极的绝缘膜; 通过绝缘膜向第一布线或电极形成接触孔; 形成用于使接触孔内的第一布线或电极接触的布线; 并且通过使用接触布线作为阳极的化学机械抛光，除去接触布线的突出部分并同时在电解液中使绝缘膜平坦化。还要求保护的是在制造该器件期间抛光半导体器件的表面的装置，包括：用于进行化学机械抛光的装置; 以及用于向半导体器件的电极提供电流的装置。

89. 发明授权

US06215595B1 Apparatus and method for laser radiation 失效
标题翻译：用于激光辐射的装置和方法
公开(公告)号：US06215595B1
公开(公告)日：2001-04-10
申请号：US09583450
申请日：2000-05-30
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Koichiro Tanaka
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
摘要翻译：通过激光束的辐射对具有大面积的硅膜进行的退火的均匀性提供了改进。在将线性激光束施加到被照射面的构造中，对形成均匀器103,104的圆柱透镜的宽度和数量进行优化，以控制线束的纵向辐射能量密度分布。例如，形成均化器103和104的圆柱形透镜的宽度设定在0.1mm至5mm的范围内，并且选择透镜的数量使得沿着每5mm-15mm设置一个透镜线性激光束的长度方向的长度。这使得可以提高线性激光器在其纵向方向上的辐射能量密度的均匀性。

90. 发明授权

US06180439B2 Method for fabricating a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06180439B2
公开(公告)日：2001-01-30
申请号：US08784290
申请日：1997-01-16
申请人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame
发明人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame
IPC分类号： H01L2184
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L21/3226 , H01L27/1203 , H01L27/1277 , H01L27/1296 , H01L29/0657 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78675
摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystalline silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is performed after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse nickel element which is concentrated locally. After that, another heat treatment is performed within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. At this time, HCl or the like is added to the atmosphere. A thermal oxide film 106 is formed in this step. At this time, gettering of the nickel element into the thermal oxide film 106 takes place. Then, the thermal oxide film 106 is removed. Thereby, a crystalline silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.
摘要翻译：通过利用金属元素获得的结晶硅膜中存在促进硅结晶的金属元素的浓度降低。在将镍引入非晶硅膜103之后进行结晶的第一热处理。然后照射激光以扩散局部浓缩的镍元素。之后，在比以前的热处理温度高的氧化气氛中进行另一次热处理。此时，将HCl等添加到大气中。在该步骤中形成热氧化膜106。此时，将镍元素吸入热氧化膜106中。然后，去除热氧化膜106。由此，可以得到金属元素浓度低，结晶性高的结晶硅膜107。

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