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81. 发明授权

US4821083A Thyristor drive system 失效
标题翻译：晶闸管驱动系统
公开(公告)号：US4821083A
公开(公告)日：1989-04-11
申请号：US101790
申请日：1987-09-28
申请人： Tsuneo Ogura , Katsuhiko Takigami , Akio Nakagawa , Tomokazu Domon
发明人： Tsuneo Ogura , Katsuhiko Takigami , Akio Nakagawa , Tomokazu Domon
IPC分类号： H01L29/08 , H01L29/744 , H03K17/00 , H03K17/732
CPC分类号： H01L29/0834 , H01L29/744 , H03K17/732 , H03K2217/0036
摘要： A gate turn-off thyristor drive system with low power loss when it is in the turn-off mode, is disclosed. A first turn-off pulse of a predetermined amplitude is applied to a first gate electrode. A second turn-off pulse is applied to a second gate electrode. An amplitude of the second turn-off pulse is smaller in absolute value than that of the first turn-off pulse. The fall time of the anode current at the time of turn-off is reduced, and the initial value of the tail current of the anode current is reduced. The power loss as the product of the anode voltage and the anode current is reduced.
摘要翻译：公开了一种在关闭模式时具有低功率损耗的栅极截止晶闸管驱动系统。将预定幅度的第一关断脉冲施加到第一栅电极。第二截止脉冲被施加到第二栅电极。第二截止脉冲的幅度的绝对值小于第一截止脉冲的幅度。在关断时的阳极电流的下降时间减少，阳极电流的尾电流的初始值减小。作为阳极电压和阳极电流的乘积的功率损耗减小。

82. 发明授权

US4672407A Conductivity modulated MOSFET 失效
标题翻译：电导率调制MOSFET
公开(公告)号：US4672407A
公开(公告)日：1987-06-09
申请号：US738188
申请日：1985-05-28
申请人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
发明人： Akio Nakagawa , Hiromichi Ohashi , Yoshihiro Yamaguchi , Kiminori Watanabe , Thuneo Thukakoshi
IPC分类号： H01L29/06 , H01L29/10 , H01L29/739 , H01L29/78
CPC分类号： H01L29/1095 , H01L29/0619 , H01L29/0696 , H01L29/7393 , H01L29/7395
摘要： A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.
摘要翻译：一种电导率调制MOSFET，具有第一导电类型的半导体衬底，形成在半导体衬底上并且具有高电阻的第二导电类型的半导体层，形成在半导体层中的第一导电类型的基极层，源极形成在基底层中的第二导电类型的层，形成在形成在沟道区上的栅极绝缘膜上的栅电极，沟道区形成在半导体层和源极层之间的基底层的表面中，欧姆接触源极层和基极层的源电极以及形成在半导体衬底的与半导体层相反的表面上的漏电极，其特征在于，导电调制MOSFET的饱和电流小于闭锁电流当预定的栅极电压施加到栅电极时。

83. 发明授权

US08791690B2 Current sensor, inverter circuit, and semiconductor device having the same 有权
公开(公告)号：US08791690B2
公开(公告)日：2014-07-29
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.

84. 发明授权

US08742534B2 Semiconductor device having lateral diode 有权
标题翻译：具有侧向二极管的半导体器件
公开(公告)号：US08742534B2
公开(公告)日：2014-06-03
申请号：US13197719
申请日：2011-08-03
申请人： Takao Yamamoto , Norihito Tokura , Hisato Kato , Akio Nakagawa
发明人： Takao Yamamoto , Norihito Tokura , Hisato Kato , Akio Nakagawa
IPC分类号： H01L29/66 , H01L29/47
CPC分类号： H01L29/868 , H01L27/0664 , H01L29/0615 , H01L29/0692 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.
摘要翻译：具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。第二电极与高杂质浓度部分形成欧姆接触。延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。

85. 发明授权

US08707132B2 Information processing apparatus, information processing method, and storage medium 有权
标题翻译：信息处理装置，信息处理方法和存储介质
公开(公告)号：US08707132B2
公开(公告)日：2014-04-22
申请号：US13175556
申请日：2011-07-01
申请人： Akio Nakagawa , Hisashi Ishikawa
发明人： Akio Nakagawa , Hisashi Ishikawa
IPC分类号： G11C29/00 , G09G5/36 , G09G5/00 , G06F13/00 , H04L12/28 , G06F9/34 , G06F3/00
CPC分类号： G06K15/408 , G06F13/00 , G06K15/40 , G06T1/60 , H04N1/32561 , H04N1/32593 , H04N1/405 , H04N1/4052
摘要： An information processing apparatus comprising: a reception unit adapted to receive a packet containing first data to be stored in a storage unit, a first address indicating an address of second data held in the storage unit, and a second address indicating an address at which the first data is to be written in the storage unit; an access unit adapted to read out the second data from the storage unit based on the first address, and write the first data in the storage unit based on the second address; and a transmission unit adapted to replace the first data of the packet received by the reception unit with the second data read out by the access unit, and transmit the packet.
摘要翻译：一种信息处理装置，包括：接收单元，适于接收包含要存储在存储单元中的第一数据的分组，指示保存在所述存储单元中的第二数据的地址的第一地址，以及指示所述第二地址，第一数据将被写入存储单元; 基于所述第一地址从所述存储单元读出所述第二数据的存取单元，基于所述第二地址将所述第一数据写入所述存储单元; 以及发送单元，其适于将接收单元接收到的分组的第一数据替换为由接入单元读出的第二数据，并发送分组。

86. 发明授权

US08354691B2 Lateral insulated-gate bipolar transistor 有权
标题翻译：侧面绝缘栅双极晶体管
公开(公告)号：US08354691B2
公开(公告)日：2013-01-15
申请号：US13226636
申请日：2011-09-07
申请人： Norihito Tokura , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
发明人： Norihito Tokura , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
IPC分类号： H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/405 , H01L29/43 , H01L29/7397
摘要： A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.
摘要翻译： N沟道横向绝缘栅双极晶体管包括半导体衬底，漂移层，集电极区，沟道层，发射极区，栅极绝缘膜，栅电极，集电极，发射极。集电极区域包括具有高杂质浓度的高杂质浓度区域和杂质浓度低于高杂质浓度区域的低杂质浓度区域。集电极与高杂质浓度区域欧姆接触，与低杂质浓度区域进行肖特基接触。

87. 发明申请

US20120119318A1 SEMICONDUCTOR DEVICE WITH LATERAL ELEMENT 审中-公开
标题翻译：具有横向元件的半导体器件
公开(公告)号：US20120119318A1
公开(公告)日：2012-05-17
申请号：US13295236
申请日：2011-11-14
申请人： Norihito TOKURA , Takao Yamamoto , Hisato Kato , Kouji Senda , Akio Nakagawa
发明人： Norihito TOKURA , Takao Yamamoto , Hisato Kato , Kouji Senda , Akio Nakagawa
IPC分类号： H01L29/06
CPC分类号： H01L29/404 , H01L29/0696 , H01L29/735 , H01L29/7394 , H01L29/861 , H01L29/8611
摘要： In a semiconductor device in which a first electrode and a second electrode are disposed on a surface of a first conductivity-type semiconductor layer of a semiconductor substrate and a lateral element is formed to cause an electric current between the first electrode and the second electrode, a scroll-shaped resistive field plate is disposed on the semiconductor layer across an insulation film. The resistive field plate extends toward the second electrode while surrounding a periphery of the first electrode in a scroll shape. A resistance value of a total resistance of the resistive field plate is in a range between 90 kΩ and 90 MΩ.
摘要翻译：在第一电极和第二电极设置在半导体衬底的第一导电类型半导体层的表面上并形成横向元件以在第一电极和第二电极之间引起电流的半导体器件中，涡卷状电阻场板跨越绝缘膜设置在半导体层上。电阻场板朝向第二电极延伸，同时围绕第一电极的周边以涡旋形状。电阻场板的总电阻的电阻值在90kΩ/ cm2之间的范围内; 和90 M＆OHgr。

88. 发明申请

US20120061726A1 LATERAL INSULATED-GATE BIPOLAR TRANSISTOR 有权
标题翻译：横向绝缘栅双极晶体管
公开(公告)号：US20120061726A1
公开(公告)日：2012-03-15
申请号：US13226636
申请日：2011-09-07
申请人： Norihito TOKURA , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
发明人： Norihito TOKURA , Shigeki Takahashi , Youichi Ashida , Akio Nakagawa
IPC分类号： H01L29/739
CPC分类号： H01L29/7394 , H01L29/0696 , H01L29/0834 , H01L29/1095 , H01L29/405 , H01L29/43 , H01L29/7397
摘要： A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region.
摘要翻译： N沟道横向绝缘栅双极晶体管包括半导体衬底，漂移层，集电极区，沟道层，发射极区，栅极绝缘膜，栅电极，集电极，发射极。集电极区域包括具有高杂质浓度的高杂质浓度区域和杂质浓度低于高杂质浓度区域的低杂质浓度区域。集电极与高杂质浓度区域欧姆接触，与低杂质浓度区域进行肖特基接触。

89. 发明授权

US07579669B2 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof 失效
标题翻译：包括功率MOS场效应晶体管和其驱动电路驱动的半导体器件
公开(公告)号：US07579669B2
公开(公告)日：2009-08-25
申请号：US11549297
申请日：2006-10-16
申请人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
发明人： Kazutoshi Nakamura , Norio Yasuhara , Tomoko Matsudai , Kenichi Matsushita , Akio Nakagawa
IPC分类号： H01L27/00
CPC分类号： H02M3/158 , H01L27/0922 , H01L29/41758 , H01L29/41775 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7813 , H01L29/7835 , H01L2924/0002 , H02M1/08 , H02M7/003 , H01L2924/00
摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.
摘要翻译：半导体器件包括高侧开关元件，驱动电路和低侧开关元件。高侧开关元件形成在第一半导体基板上，其一端具有输入电压的电流通路，电流路径的另一端与电感连接。驱动电路形成在形成有高侧开关元件的第一半导体基板上，驱动高侧开关元件。低侧开关元件形成在与第一半导体衬底分离的第二半导体衬底上，并且具有连接到电感的漏极和被提供参考电位的源极。

90. 发明授权

US07557545B2 Electric power unit operating in continuous and discontinuous conduction modes and control method therefor 失效
标题翻译：电力单元在连续和不连续导通模式下工作及其控制方法
公开(公告)号：US07557545B2
公开(公告)日：2009-07-07
申请号：US11485466
申请日：2006-07-13
申请人： Toshiyuki Naka , Akio Nakagawa , Kazutoshi Nakamura
发明人： Toshiyuki Naka , Akio Nakagawa , Kazutoshi Nakamura
IPC分类号： G05F1/618
CPC分类号： H02M3/157 , H02M3/1588 , Y02B70/1466
摘要： An electronic power unit includes first and second MOS transistors and a digital control circuit. The first MOS transistor applies a voltage to the load. The second MOS transistor remains on while the first MOS transistor remains off and rectifies the current flowing in the load. The digital control circuit turns on the first transistor upon lapse of a first time interval from the time the second MOS transistor is turned off. The digital control circuit turns on the second MOS transistor upon lapse of a second time interval from the time the first MOS transistor is turned off. The digital control circuit controls the on-period of the first MOS transistor so that the voltage applied to the load is constant in a discontinuous conduction mode. The digital control circuit determines, while the voltage applied to the load is constant, an optimal value of the first time from the duty.
摘要翻译：电子功率单元包括第一和第二MOS晶体管和数字控制电路。第一个MOS晶体管向负载施加电压。第二MOS晶体管保持导通，而第一MOS晶体管保持关断并且对负载中流动的电流进行整流。数字控制电路在从第二MOS晶体管截止时起第一时间间隔开启第一晶体管。数字控制电路在从第一MOS晶体管截止时经过第二时间间隔开启第二MOS晶体管。数字控制电路控制第一MOS晶体管的导通周期，使得施加到负载的电压在不连续导通模式下是恒定的。数字控制电路在施加到负载的电压是恒定的情况下确定第一次从占空比的最佳值。

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