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81. 发明申请

US20090009812A1 Distortion Compensation for Printing 有权
标题翻译：打印失真补偿
公开(公告)号：US20090009812A1
公开(公告)日：2009-01-08
申请号：US11720430
申请日：2005-11-10
申请人： Henning Sirringhaus , James D. Watts
发明人： Henning Sirringhaus , James D. Watts
IPC分类号： H04N1/409
CPC分类号： H04N1/409 , B41J2/2146 , H05K3/125
摘要： A printing machine includes a substrate and at least one printhead with at least two material deposition channels which are movable with respect to the substrate, wherein the printhead is mounted on a stage which allows rotation of the printhead around an axis perpendicular to the substrate and translation in a direction perpendicular to the print direction, and wherein during each print swath, the rotation angle and translation values of the printhead are varied in order to change the pitch and the lateral position in the direction perpendicular to the print direction of material deposited from the different deposition channels; and an algorithm which computes the required rotation angles and translation values for a given pattern of substrate distortion.
摘要翻译：印刷机包括基材和至少一个具有至少两个能够相对于基底移动的材料沉积通道的打印头，其中打印头安装在允许打印头围绕垂直于基底的轴旋转和平移的平台上在垂直于打印方向的方向上，并且其中在每个打印条带期间，改变打印头的旋转角度和平移值，以便在垂直于从打印方向沉积的材料的打印方向垂直的方向上改变间距和横向位置不同沉积通道; 以及为给定的衬底失真图案计算所需的旋转角度和平移值的算法。

82. 发明申请

US20070278478A1 Ambipolar, Light-Emitting Field-Effect Transistors 审中-公开
标题翻译：双极，发光场效应晶体管
公开(公告)号：US20070278478A1
公开(公告)日：2007-12-06
申请号：US10586244
申请日：2005-01-17
申请人： Jana Zaumseil , Henning Sirringhaus , Lay-Lay Chua , Peter Ho , Richard Friend
发明人： Jana Zaumseil , Henning Sirringhaus , Lay-Lay Chua , Peter Ho , Richard Friend
IPC分类号： H01L51/50 , H01L21/312
CPC分类号： H01L51/5296 , B82Y10/00 , H01L21/02118 , H01L21/02126 , H01L21/3122 , H01L51/0022 , H01L51/0023 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/0043 , H01L51/0046 , H01L51/0508 , H01L51/0516 , H01L51/0545 , H01L51/52 , H01L51/5203 , H01L51/56 , H05B33/08
摘要： An ambipolar, light-emitting transistor comprising an organic semiconductive layer in contact with an electron injecting electrode and a hole injecting electrode separated by a distance L defining the channel length of the transistor, in which the zone of the organic semiconductive layer from which the light is emitted is located more than L/10 away from both the electron as well as the hole injecting electrode.
摘要翻译：一种双极型发光晶体管，包括与电子注入电极接触的有机半导体层和分隔开距离L的空穴注入电极，所述距离限定了所述晶体管的沟道长度，其中所述有机半导体层的所述区域被发射的位置距离电子以及空穴注入电极都大于L / 10。

83. 发明申请

US20070040170A1 Electronic devices 有权
标题翻译：电子设备
公开(公告)号：US20070040170A1
公开(公告)日：2007-02-22
申请号：US10571556
申请日：2004-09-10
申请人： Paul Cain , Henning Sirringhaus , Nicholas Stone , Thomas Brown
发明人： Paul Cain , Henning Sirringhaus , Nicholas Stone , Thomas Brown
IPC分类号： H01L31/00
CPC分类号： H01L27/28 , B82Y10/00 , B82Y30/00 , H01L27/283 , H01L51/0004 , H01L51/0036 , H01L51/052
摘要： An electronic device including at least first and second transistors integrated together on a substrate and each including an organic semiconductor region, wherein the first and second transistors are either both n-type or both p-type but wherein one of the first and second transistors is a normally-ON transistor and the other of the first and second transistors is a normally-OFF transistor.
摘要翻译：一种电子器件，其至少包括在衬底上集成在一起的第一和第二晶体管，并且每个包括有机半导体区域，其中所述第一和第二晶体管既是n型的，也可以是p型，但是其中第一和第二晶体管之一是常开晶体管，第一和第二晶体管中的另一个是常关晶体管。

84. 发明授权

US07105854B2 Doping of source-drain contacts 有权
标题翻译：源极 - 漏极触点的掺杂
公开(公告)号：US07105854B2
公开(公告)日：2006-09-12
申请号：US10693100
申请日：2003-10-27
申请人： Henning Sirringhaus , Richard Henry Friend
发明人： Henning Sirringhaus , Richard Henry Friend
IPC分类号： H01L21/00
CPC分类号： H01L21/288 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A method for forming an electronic device on a substrate, the device including a first electrically conductive region, a second electrically conductive region spaced from the first electrically conductive region and a region of an semiconductor material between the first and second electrically conductive regions and in contact with the first electrically conductive region, the method comprising doping an interfacial zone comprising least part of the periphery of the semiconductor material at the interface between the semiconductor material and the first electrically conductive region by means of a dopant contained in the first conductive material and capable of doping the semiconducting material so as to thereby enhance the conductivity of the interfacial zone.
摘要翻译：一种在衬底上形成电子器件的方法，所述器件包括第一导电区域，与第一导电区域间隔开的第二导电区域和第一和第二导电区域之间的半导体材料区域并且接触利用第一导电区域，该方法包括通过包含在第一导电材料中的掺杂剂在半导体材料和第一导电区域之间的界面处掺杂包含半导体材料的至少一部分周边的界面区，掺杂半导体材料，从而提高界面区的导电性。

85. 发明申请

US20060148167A1 Electronic devices 有权
标题翻译：电子设备
公开(公告)号：US20060148167A1
公开(公告)日：2006-07-06
申请号：US10538870
申请日：2003-12-12
申请人： Thomas Brown , Henning Sirringhaus
发明人： Thomas Brown , Henning Sirringhaus
IPC分类号： H01L21/8238
CPC分类号： B05D5/12 , B05D1/322 , B05D3/145 , B82Y10/00 , B82Y30/00 , H01L51/0016 , H01L51/0017 , H01L51/0021 , H01L51/0022 , H01L51/0023 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/057 , H01L51/105 , H01L2251/105 , Y10S977/887
摘要： A method for forming an electronic device in a multilayer structure comprising the steps of: defining a topographic profile in a laterally extending first layer; depositing at least one non-planarizing layer on top of the first layer such that the topographic profile of the surface of the or each non-planarizing layer conforms to that of the laterally extending first layer onto the top-most non-planarizing layer, such that the lateral location of the additional layer is defined by the shape of the topographic profile of the non-planarizing layer, and whereby the additional layer is laterally aligned with the topographic profile in the first layer.
摘要翻译：一种用于在多层结构中形成电子器件的方法，包括以下步骤：在横向延伸的第一层中限定形貌轮廓; 在第一层的顶部上沉积至少一个非平坦化层，使得该或每个非平坦化层的表面的形貌轮廓符合横向延伸的第一层的形状轮廓到最顶层的非平坦化层上，附加层的横向位置由非平坦化层的形貌构成的形状限定，并且由此附加层与第一层中的形貌轮廓横向对准。

86. 发明授权

US06808972B2 Method of processing solution on a substrate 有权
标题翻译：在基板上处理溶液的方法
公开(公告)号：US06808972B2
公开(公告)日：2004-10-26
申请号：US10175909
申请日：2002-06-21
申请人： Henning Sirringhaus , Takeo Kawase , Richard Henry Friend
发明人： Henning Sirringhaus , Takeo Kawase , Richard Henry Friend
IPC分类号： H01L218238
CPC分类号： H01L51/52 , B82Y30/00 , H01L21/31133 , H01L21/76838 , H01L27/283 , H01L27/32 , H01L51/0004 , H01L51/0012 , H01L51/0018 , H01L51/002 , H01L51/0021 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/052 , H01L51/0541 , H01L51/0545
摘要： A method for forming on a substrate an electronic device including an electrically conductive or semiconductive material in a plurality or regions, the operation of the device utilising current flow from a first region to a second region, the method comprising: forming a mixture by mixing the material with a liquid; forming on the substrate a confinement structure including a first zone in a first area of the substrate and a second zone in a second area of the substrate, the first zone having a greater repellence for the mixture than the second zone, and a third zone in a third area of the substrate spaced from the second area by the first area, the first zone having a greater repellence for the mixture than the third zone, and depositing the material on the substrate by applying the mixture over the substrate whereby the deposited material may be confined by the relative repellence of the first zone to spaced apart regions defining the said first and second regions of the device and being electrically separate in their plane by means of the relative repellence of the first zone and to be absent from the first area of the substrate so as to resist the flow across the first zone of electrical current between the spaced a part regions of the deposited material.
摘要翻译：一种在衬底上形成包括多个或多个区域中的导电或半导体材料的电子器件的方法，所述器件利用从第一区域到第二区域的电流的操作，所述方法包括：通过将液体材料; 在所述基板上形成约束结构，所述约束结构包括所述基板的第一区域中的第一区域和所述基板的第二区域中的第二区域，所述第一区域具有比所述第二区域更大的对混合物的排斥性，以及第三区域所述基板的第三区域与所述第二区域间隔开所述第一区域，所述第一区域具有比所述第三区域更大的对混合物的排斥性，以及通过将所述混合物施加在所述基板上而将所述材料沉积在所述基板上，由此所沉积的材料被限制为第一区域相对排斥限定装置的所述第一和第二区域的间隔开的区域，并且通过第一区域的相对排斥性在其平面中电分离，并且不存在于第一区域的第一区域衬底，以便抵抗在沉积材料的间隔开的部分区域之间穿过第一区域的电流的流动。

87. 发明授权

US06626566B2 Compounds for electronic devices 有权
公开(公告)号：US06626566B2
公开(公告)日：2003-09-30
申请号：US10155823
申请日：2002-05-24
申请人： Andrew Bruce Holmes , Stephen Carl Moratti , Xiao-Chang Li , Henning Sirringhaus , Arno Kraft , Michael Mark Murray
发明人： Andrew Bruce Holmes , Stephen Carl Moratti , Xiao-Chang Li , Henning Sirringhaus , Arno Kraft , Michael Mark Murray
IPC分类号： G02F1136
CPC分类号： H01L51/0036 , C07D495/04 , C07D495/14 , C08G61/126 , H01L51/0068 , H01L51/0074 , H01L51/0508 , Y10S362/80
摘要： The present invention provides a compound or complex comprising at least two moieties, each moiety being comprised of two or more thiophenes fused directly to each other. Also provided is a method for the production of the compounds of the present invention, which method comprises the coupling of one fused thiophene derivative to another fused thiophene derivative.

88. 发明授权

US06603139B1 Polymer devices 有权
标题翻译：聚合物装置
公开(公告)号：US06603139B1
公开(公告)日：2003-08-05
申请号：US09673122
申请日：2001-06-06
申请人： Nir Tessler , Henning Sirringhaus , Richard Henry Friend
发明人： Nir Tessler , Henning Sirringhaus , Richard Henry Friend
IPC分类号： H01L5100
CPC分类号： B82Y10/00 , C08G61/126 , C08G2261/141 , C08G2261/212 , C08G2261/3223 , C08G2261/92 , G11C13/0014 , G11C13/0016 , H01L27/305 , H01L27/3274 , H01L31/153 , H01L51/0012 , H01L51/0036 , H01L51/0038 , H01L51/0558 , H01L51/428 , Y02E10/549
摘要： An integrated circuit device comprising: a current drive switching element having an input electrode, an output electrode, a switchable region comprising a semiconductive polymer material electrically coupled between the input electrode and the output electrode, and a control electrode electrically coupled to the switchable region so as to allow the application of a bias to the control electrode to vary the flow of current through the switchable region between the input electrode and the output electrode; and a second circuit element integrated with the switching element, and electrically coupled with the input electrode of the switching element for receiving a drive current from the switching element.
摘要翻译：一种集成电路装置，包括：电流驱动开关元件，其具有输入电极，输出电极，包括电耦合在输入电极和输出电极之间的半导体聚合物材料的可切换区域以及电耦合到可切换区域的控制电极，以允许向控制电极施加偏压以改变通过输入电极和输出电极之间的可切换区域的电流流动; 以及与开关元件集成的第二电路元件，并且与开关元件的输入电极电耦合，用于接收来自开关元件的驱动电流。

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