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81. 发明申请

US20060286482A1 Lithographic apparatus and device manufacturing method utilizing a resettable or reversible contrast enhancing layer in a multiple exposure system 失效
标题翻译：在多重曝光系统中利用可复位或可逆对比度增强层的光刻设备和器件制造方法
公开(公告)号：US20060286482A1
公开(公告)日：2006-12-21
申请号：US11439290
申请日：2006-05-24
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： G03C1/00
CPC分类号： G03F7/70466 , G03F7/70958 , Y10S430/146
摘要： A device manufacturing system and method are used to perform multiple exposures utilizing a resettable or reversible contrast enhancing layer. A radiation sensitive layer is formed on a substrate. A resettable or reversible contrast enhancing layer is formed on the radiation sensitive layer. The resettable or reversible contrast enhancing layer is bleached with a first pattern. The first pattern formed in the resettable or reversible contrast enhancing layer is transferred to the radiation sensitive layer. The resettable or reversible contrast enhancing layer is reset to unbleach the resettable or reversible contrast enhancing layer. The resettable or reversible contrast enhancing layer is bleached with a second pattern. The second pattern formed in the resettable or reversible contrast enhancing layer is transferred to the radiation sensitive layer.
摘要翻译：使用装置制造系统和方法来利用可重置或可逆的对比度增强层来进行多次曝光。辐射敏感层形成在基底上。可辐射或可逆的对比度增强层形成在辐射敏感层上。可复位或可逆对比度增强层用第一图案漂白。形成在可复位或可逆对比度增强层中的第一图案被转印到辐射敏感层。复位或可逆对比度增强层被复位以使可复位或可逆的对比度增强层未漂白。可复位或可逆对比度增强层以第二图案漂白。形成在可复位或可逆对比度增强层中的第二图案被转印到辐射敏感层。

82. 发明申请

US20060275708A1 Lithographic printing with polarized light 有权
公开(公告)号：US20060275708A1
公开(公告)日：2006-12-07
申请号：US11503113
申请日：2006-08-14
申请人： Nabila Baba-Ali , Justin Kreuzer , Harry Sewell
发明人： Nabila Baba-Ali , Justin Kreuzer , Harry Sewell
IPC分类号： G03F7/20
CPC分类号： G03F7/70566 , G02B27/28 , G03F7/2006
摘要： The present invention provides systems and methods for improved lithographic printing with polarized light. In embodiments of the present invention, polarized light (radially or tangentially polarized) is used to illuminate a phase-shift mask (PSM) and produce an exposure beam. A negative photoresist layer is then exposed by light in the exposure beam. A chromeless PSM can be used. In further embodiments of the present invention, radially polarized light is used to illuminate a mask and produce an exposure beam. A positive photoresist layer is then exposed by light in the exposure beam. The mask can be an attenuating PSM or binary mask. A very high image quality is obtained even when printing contact holes at various pitches in low k applications.

83. 发明申请

US20060238721A1 Liquid immersion lithography system having a tilted showerhead relative to a substrate 有权
标题翻译：液浸光刻系统相对于基底具有倾斜的喷头
公开(公告)号：US20060238721A1
公开(公告)日：2006-10-26
申请号：US11403196
申请日：2006-04-13
申请人： Nicolaas Kate , Erik Loopstra , Aleksandr Khmelichek , Louis Markoya , Harry Sewell
发明人： Nicolaas Kate , Erik Loopstra , Aleksandr Khmelichek , Louis Markoya , Harry Sewell
IPC分类号： G03B21/18
CPC分类号： G03F7/70341
摘要： A liquid immersion lithography system includes projection optics and a showerhead. The projection optics are configured to expose a substrate with a patterned beam. The showerhead includes a first nozzle and a second nozzle that are configured to be at different distances from a surface of the substrate during an exposure operation.
摘要翻译：液浸光刻系统包括投影光学元件和喷头。投影光学器件被配置为用图案化的光束曝光衬底。喷头包括第一喷嘴和第二喷嘴，其被配置为在曝光操作期间与基板的表面不同的距离。

84. 发明授权

US07090964B2 Lithographic printing with polarized light 有权
标题翻译：带偏光的平版印刷
公开(公告)号：US07090964B2
公开(公告)日：2006-08-15
申请号：US10781803
申请日：2004-02-20
申请人： Nabila Baba-Ali , Justin Kreuzer , Harry Sewell
发明人： Nabila Baba-Ali , Justin Kreuzer , Harry Sewell
IPC分类号： G02B5/30 , G03B27/72
CPC分类号： G03F7/70566 , G02B27/28 , G03F7/2006
摘要： The present invention provides systems and methods for improved lithographic printing with polarized light. In embodiments of the present invention, polarized light (radially or tangentially polarized) is used to illuminate a phase-shift mask (PSM) and produce an exposure beam. A negative photoresist layer is then exposed by light in the exposure beam. A chromeless PSM can be used. In further embodiments of the present invention, radially polarized light is used to illuminate a mask and produce an exposure beam. A positive photoresist layer is then exposed by light in the exposure beam. The mask can be an attenuating PSM or binary mask. A very high image quality is obtained even when printing contact holes at various pitches in low k applications.
摘要翻译：本发明提供了利用偏振光改进平版印刷的系统和方法。在本发明的实施例中，使用偏振光（径向或切向极化）照亮相移掩模（PSM）并产生曝光光束。然后在曝光束中用光曝光负性光致抗蚀剂层。可以使用无色PSM。在本发明的另外的实施例中，使用径向偏振光照射掩模并产生曝光光束。然后，正光致抗蚀剂层在曝光束中被光曝光。掩模可以是衰减PSM或二进制掩模。即使在低k应用中以各种间距打印接触孔，也能获得非常高的图像质量。

85. 发明申请

US20060131270A1 Method and system for making a nano-plate for imprint lithography 失效
标题翻译：制造用于压印光刻的纳米板的方法和系统
公开(公告)号：US20060131270A1
公开(公告)日：2006-06-22
申请号：US11012489
申请日：2004-12-16
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： C23F1/00
CPC分类号： G03F7/0002 , B81C99/009 , B82Y10/00 , B82Y40/00 , G03F7/0017
摘要： Provided is a method and system for manufacturing a nano-plate. The method includes depositing two or more types of film around a central core to form a plurality of film layers, each film layer being of a different type than its adjacent layers. Next, the deposited film layers are sectioned to expose a patterned surface. Finally, the patterned surface is then planarized and selectively etched to form a relief pattern which can be used as an imprint stamp.
摘要翻译：提供了一种用于制造纳米板的方法和系统。该方法包括在中心芯周围沉积两种或更多种类型的膜以形成多个膜层，每个膜层的类型与其相邻层不同。接下来，沉积的膜层被分割以暴露图案化表面。最后，将图案化表面平面化并选择性地蚀刻以形成可用作压印印模的浮雕图案。

86. 发明授权

US06980277B2 Immersion photolithography system and method using inverted wafer-projection optics interface 失效
标题翻译：浸入式光刻系统及方法采用倒置晶片投影光学接口
公开(公告)号：US06980277B2
公开(公告)日：2005-12-27
申请号：US10831300
申请日：2004-04-26
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： G02B13/14 , G03B27/42 , G03F7/20 , H01L21/027 , G03B27/52 , G02B21/02
CPC分类号： G03F7/70341 , G03F7/70233
摘要： A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation, and also includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides a liquid between the projection optical system and the substrate. The projection optical system is positioned below the substrate.
摘要翻译：液浸光刻系统包括用电磁辐射曝光基板的曝光系统，还包括将电磁辐射聚焦在基板上的投影光学系统。液体供应系统在投影光学系统和基板之间提供液体。投影光学系统位于基板的下方。

87. 发明授权

US06977716B2 Catadioptric lithography system and method with reticle stage orthogonal to wafer stage 失效
标题翻译：光折射光刻系统和方法与标线片正交于晶片台
公开(公告)号：US06977716B2
公开(公告)日：2005-12-20
申请号：US10833227
申请日：2004-04-28
申请人： Harry Sewell , Jorge Ivaldi , John Shamaly
发明人： Harry Sewell , Jorge Ivaldi , John Shamaly
IPC分类号： G03F7/20 , H01L21/027 , G03B27/42 , G02B9/00 , G02B27/58
CPC分类号： G03F7/70225
摘要： The present invention relates to a lithography apparatus and method using catadioptric exposure optics that projects high quality images without image flip. The apparatus includes means for illuminating a reticle stage to produce a patterned image. The apparatus also includes means for receiving the patterned image at each of a plurality of wafer stages. Each of the wafer stages has an associated data collection station. The apparatus also includes means for positioning the reticle stage substantially orthogonal to each of the plurality of wafer stages as well as means for directing the patterned image through a catadioptric exposure optics element between the reticle stage and each wafer stage to cause an even number of reflections of the patterned image and to project the patterned image onto each wafer stage in a congruent manner. The invention can also be combined with a dual isolation system.
摘要翻译：本发明涉及一种使用反射折射曝光光学元件的光刻设备和方法，该光学装置和方法能够投射高质量的图像而无需图像翻转。该装置包括用于照亮标线片台以产生图案化图像的装置。该装置还包括用于在多个晶片级中的每一个处接收图案化图像的装置。每个晶片台具有相关的数据采集台。该装置还包括用于将标线片台基本上正交于多个晶片台中的每一个定位的装置以及用于引导图案化图像通过分划板台和每个晶片台之间的反射折射曝光光学元件的装置，以产生偶数次的反射并且以均匀的方式将图案化图像投影到每个晶片台上。本发明还可以与双隔离系统组合。

88. 发明申请

US20050151953A1 Maskless optical writer 有权
标题翻译：无掩模光学作家
公开(公告)号：US20050151953A1
公开(公告)日：2005-07-14
申请号：US10755470
申请日：2004-01-13
申请人： Harry Sewell
发明人： Harry Sewell
IPC分类号： G02F1/13 , G03F7/20 , H01L21/027 , G03B27/72
CPC分类号： G03F7/70566 , A61B6/4435 , G03F7/70283 , G03F7/70291
摘要： A maskless pattern generating system for use in lithography includes a light source that generates a light beam, a programmable pattern generator that generates a pattern image from the light beam based on a control signal input, and a controller to provide the control signal input to the programmable pattern generator based on pattern information provided to the controller. The control signal input instructs the programmable pattern generator to set individual voltage levels corresponding to individual pixels in a pixel array, wherein each of the individual voltage levels corresponds to a greyscale level assigned to a particular individual pixel. Setting the individual voltage levels provide a phase shift of the resulting pattern image beam, allowing the programmable pattern generator to act as a phase shift mask. This maskless pattern writing system acts as a light valve to control pattern imagery, on a pixel by pixel basis, for the purposes of direct writing patterns.
摘要翻译：用于光刻的无掩模图案生成系统包括产生光束的光源，基于控制信号输入从光束产生图案图像的可编程图案发生器，以及控制器，用于向基于提供给控制器的模式信息的可编程模式生成器。控制信号输入指示可编程模式发生器设置对应于像素阵列中的各个像素的各个电压电平，其中各个电压电平中的每一个对应于分配给特定个别像素的灰度级。设置各个电压电平提供所得到的图案图像束的相移，允许可编程模式发生器充当相移掩模。为了直接写入图案，该无掩模图案书写系统充当光阀，以逐个像素为基础来控制图案图像。

89. 发明授权

US08625096B2 Method and system for increasing alignment target contrast 失效
标题翻译：增加校准目标对比度的方法和系统
公开(公告)号：US08625096B2
公开(公告)日：2014-01-07
申请号：US12730906
申请日：2010-03-24
申请人： Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
发明人： Harry Sewell , Mircea Dusa , Richard Johannes Franciscus Van Haren , Manfred Gawein Tenner , Maya Angelova Doytcheva
IPC分类号： G01B11/00 , H01L23/544 , G03B27/32 , G03F9/00 , G03C5/00 , H01L21/76
CPC分类号： G03F9/7084 , G03F9/7076 , G03F9/708
摘要： A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.
摘要翻译：使用双重图案化工艺来对准半导体晶片。沉积具有第一光学特性的第一抗蚀层，并形成至少一个对准标记。开发出第一抗蚀剂层。具有第二光学特性的第二抗蚀剂层沉积在第一抗蚀剂层上。第一和第二抗蚀剂层和对准标记的组合具有使得入射到对准标记上的预定波长的辐射产生作为第一和第二光学特性的函数的第一或更高阶衍射。

90. 发明授权

US08339571B2 Lithographic method and apparatus 有权
标题翻译：平版印刷方法和装置
公开(公告)号：US08339571B2
公开(公告)日：2012-12-25
申请号：US12314612
申请日：2008-12-12
申请人： Harry Sewell , Jozef Petrus Henricus Benschop
发明人： Harry Sewell , Jozef Petrus Henricus Benschop
IPC分类号： G03B27/42 , G03B27/32
CPC分类号： G03F7/0043 , G03F7/70466
摘要： A multiple patterning process employs a phase change material, portions of which can be converted to an amorphous state and then a remaining portion is selectively removed to provide high resolution pattern features with a feature spacing smaller than, for example, a minimum spacing available in a conventional patterning layer employing a single exposure. A lithographic apparatus for use in the process may comprise an exposure tool having a single illuminator and single patterning device that is imaged through a single exposure slit onto a scanning substrate. Alternatively, the exposure tool may have multiple illuminators and/or multiple scanning complementary patterning devices optionally used with multiple exposure slits on the scanning substrate to facilitate double patterning in a single substrate pass.
摘要翻译：多重图形化工艺采用相变材料，其部分可以转换为非晶状态，然后选择性地去除剩余部分以提供高分辨率图案特征，其特征间距小于例如在采用单次曝光的常规图案层。用于该过程的光刻设备可以包括具有单个照明器和单个图案形成装置的曝光工具，其通过单个曝光狭缝成像到扫描基板上。或者，曝光工具可以具有可选地与扫描基板上的多个曝光狭缝一起使用的多个照明器和/或多个扫描互补图案形成装置，以便于在单个衬底通路中进行双重图案化。

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