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81. 发明授权

US08183510B2 Image sensor with buried self aligned focusing element 有权
标题翻译：具有埋入自对准聚焦元件的图像传感器
公开(公告)号：US08183510B2
公开(公告)日：2012-05-22
申请号：US12559307
申请日：2009-09-14
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Ashish Shah , Howard E. Rhodes
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Ashish Shah , Howard E. Rhodes
IPC分类号： H01L27/00 , H01L31/00 , H01J5/16
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14643
摘要： An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.
摘要翻译：图像传感器包括光学传感器区域，电介质和金属层的堆叠以及嵌入层。光学传感器设置在半导体衬底内。电介质层和金属层堆叠在光学传感器区域上方的半导体衬底的前侧。嵌入式聚焦层设置在由支撑栅格支撑的背面照明（BSI）图像传感器或由半导体衬底组成的支撑栅格上的半导体衬底的背面。

82. 发明申请

US20090200622A1 SELF-ALIGNED FILTER FOR AN IMAGE SENSOR 有权
标题翻译：用于图像传感器的自对准滤波器
公开(公告)号：US20090200622A1
公开(公告)日：2009-08-13
申请号：US12029392
申请日：2008-02-11
申请人： Hsin-Chih Tai , Duli Mao , Vincent Venezia , WeiDong Qian , Ashish Shah , Howard E. Rhodes
发明人： Hsin-Chih Tai , Duli Mao , Vincent Venezia , WeiDong Qian , Ashish Shah , Howard E. Rhodes
IPC分类号： H01L31/00 , G01T1/24
CPC分类号： H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate.
摘要翻译：图像传感器包括设置在半导体衬底中的至少一个感光元件。金属导体可以设置在半导体衬底上。过滤器可以设置在至少两个单独的金属导体之间，并且微透镜可以设置在过滤器上。可以在金属导体和半导体衬底之间和/或各个金属导体之间设置绝缘体材料。可以去除绝缘体材料，使得过滤器可以设置在半导体衬底上。

83. 发明申请

US20130113969A1 METHOD, APPARATUS AND SYSTEM FOR PROVIDING IMPROVED FULL WELL CAPACITY IN AN IMAGE SENSOR PIXEL 有权
标题翻译：在图像传感器像素中提供改善的全能力的方法，装置和系统
公开(公告)号：US20130113969A1
公开(公告)日：2013-05-09
申请号：US13288880
申请日：2011-11-03
申请人： Sohei Manabe , Keh-Chiang Ku , Vincent Venezia , Hsi-Chih Tai , Duli Mao , Howard E. Rhodes
发明人： Sohei Manabe , Keh-Chiang Ku , Vincent Venezia , Hsi-Chih Tai , Duli Mao , Howard E. Rhodes
IPC分类号： H04N5/335
CPC分类号： H01L27/14643 , H01L27/1461 , H01L27/14612 , H01L27/14616 , H01L27/1463 , H01L27/14641
摘要： Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.
摘要翻译：用于提高图像传感器中像素结构的完整容量的技术和机制。在一个实施例中，图像传感器的第一像素结构包括植入区域，其中植入区域的偏斜对应于植入角度，并且图像传感器的第二像素结构包括传输门。在另一个实施例中，第一像素结构的注入区域与第二像素结构的传输门的偏移对应于植入角度。

84. 发明申请

US20110089311A1 TRENCH TRANSFER GATE FOR INCREASED PIXEL FILL FACTOR 有权
标题翻译：用于增加像素填充因子的TRENCH转移门
公开(公告)号：US20110089311A1
公开(公告)日：2011-04-21
申请号：US12582585
申请日：2009-10-20
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Howard E. Rhodes
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Howard E. Rhodes
IPC分类号： H01L31/112 , H01L27/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： An image sensor provides high scalability and reduced image lag. The sensor includes a first imaging pixel that has a first photodiode region formed in a substrate of the image sensor. The sensor also includes a first vertical transfer transistor coupled to the first photodiode region. The first vertical transfer transistor can be used to establish an active channel. The active channel typically extends along the length of the first vertical transfer transistor and couples the first photodiode region to a floating diffusion.
摘要翻译：图像传感器提供高可扩展性和减少图像滞后。传感器包括具有形成在图像传感器的基板中的第一光电二极管区域的第一成像像素。传感器还包括耦合到第一光电二极管区域的第一垂直传输晶体管。第一垂直传输晶体管可用于建立有源通道。有源沟道通常沿着第一垂直传输晶体管的长度延伸，并将第一光电二极管区域耦合到浮动扩散。

85. 发明申请

US20100038523A1 IMAGE SENSOR WITH BURIED SELF ALIGNED FOCUSING ELEMENT 有权
标题翻译：具有自由自对准聚焦元件的图像传感器
公开(公告)号：US20100038523A1
公开(公告)日：2010-02-18
申请号：US12559307
申请日：2009-09-14
申请人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Ashish Shah , Howard E. Rhodes
发明人： Vincent Venezia , Hsin-Chih Tai , Duli Mao , Ashish Shah , Howard E. Rhodes
IPC分类号： H01J40/14 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14643
摘要： An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.
摘要翻译：图像传感器包括光学传感器区域，电介质和金属层的堆叠以及嵌入层。光学传感器设置在半导体衬底内。电介质层和金属层堆叠在光学传感器区域上方的半导体衬底的前侧。嵌入式聚焦层设置在由支撑栅格支撑的背面照明（BSI）图像传感器或由半导体衬底组成的支撑栅格上的半导体衬底的背面。

86. 发明申请

US20090200586A1 BACKSIDE ILLUMINATED IMAGING SENSOR WITH SILICIDE LIGHT REFLECTING LAYER 有权
标题翻译：背面照明成像传感器与硅光反射层
公开(公告)号：US20090200586A1
公开(公告)日：2009-08-13
申请号：US12142678
申请日：2008-06-19
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Howard E. Rhodes
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/1464 , H01L27/14643
摘要： A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.
摘要翻译：背面照明成像传感器包括半导体层，金属互连层和硅化物光反射层。半导体层具有前表面和后表面。在半导体层内形成包括光电二极管区域的成像像素。金属互连层电耦合到光电二极管区域，并且硅化物光反射层耦合在金属互连层和半导体层的前表面之间。在操作中，光电二极管区域从半导体层的背面接收光，其中接收的光的一部分通过光电二极管区域传播到硅化物光反射层。硅化物光反射层被配置为反射从光电二极管区域接收的光的部分。

87. 发明申请

US20140014813A1 INTEGRATED CIRCUIT STACK WITH INTEGRATED ELECTROMAGNETIC INTERFERENCE SHIELDING 有权
标题翻译：具有集成电磁干扰屏蔽的集成电路堆栈
公开(公告)号：US20140014813A1
公开(公告)日：2014-01-16
申请号：US13547997
申请日：2012-07-12
申请人： Duli Mao , Hsin-Chih Tai , Yin Qian , Tiejun Dai , Howard E. Rhodes , Hongli Yang
发明人： Duli Mao , Hsin-Chih Tai , Yin Qian , Tiejun Dai , Howard E. Rhodes , Hongli Yang
IPC分类号： H01L23/552 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/14634 , H01L27/1464 , H01L27/1469
摘要： An integrated circuit system includes a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide. A frontside of the first device wafer is bonded to a frontside of the second device wafer at a bonding interface. A conductive path couples the first conductor to the second conductor through the bonding interface. A first metal EMI shield is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface.
摘要翻译：集成电路系统包括具有靠近第一金属层的第一半导体层的第一器件晶片，第一金属层包括设置在第一金属层氧化物内的第一导体。具有靠近包括第二导体的第二金属层的第二半导体层的第二器件晶片设置在第二金属层氧化物内。第一器件晶片的前端在接合界面处结合到第二器件晶片的前侧。导电路径通过接合界面将第一导体耦合到第二导体。第一金属EMI屏蔽设置在第一金属氧化物层和第二金属层氧化物层之一中。第一EMI屏蔽包括在最靠近接合界面的第一金属氧化物层和第二金属层氧化物层中的所述一个的金属层中。

88. 发明申请

US20130264688A1 METHOD AND APPARATUS PROVIDING INTEGRATED CIRCUIT SYSTEM WITH INTERCONNECTED STACKED DEVICE WAFERS 审中-公开
标题翻译：提供具有互连堆叠器件波形的集成电路系统的方法和装置
公开(公告)号：US20130264688A1
公开(公告)日：2013-10-10
申请号：US13441627
申请日：2012-04-06
申请人： Yin Qian , Hsin-Chih Tai , Duli Mao , Tiejun Dai , Howard E. Rhodes , Hongli Yang
发明人： Yin Qian , Hsin-Chih Tai , Duli Mao , Tiejun Dai , Howard E. Rhodes , Hongli Yang
IPC分类号： H01L29/06 , H01L21/28
CPC分类号： H01L24/80 , H01L21/76898 , H01L23/481 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L27/14634 , H01L2224/04042 , H01L2224/05567 , H01L2224/05571 , H01L2224/08145 , H01L2224/2401 , H01L2224/24105 , H01L2224/24147 , H01L2224/48151 , H01L2224/73251 , H01L2224/80357 , H01L2224/80896 , H01L2224/80986 , H01L2224/82031 , H01L2224/82106 , H01L2224/9202 , H01L2224/94 , H01L2225/06544 , H01L2924/00014 , H01L2924/14 , H01L2924/1433 , H01L2924/3511 , H01L2224/80001 , H01L2924/00012 , H01L2224/05552
摘要： An integrated circuit system includes a first device wafer that has a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer that has a second semiconductor layer proximate to a second metal layer including a second conductor disposed within a second metal layer oxide is also included. A frontside of the first metal layer oxide is bonded to a frontside of the second metal layer oxide at an oxide bonding interface between the first metal layer oxide and the second metal layer oxide. A conductive path couples the first conductor to the second conductor with conductive material formed in a cavity etched between the first conductor and the second conductor and etched through the oxide bonding interface and through the second semiconductor layer from a backside of the second device wafer.
摘要翻译：集成电路系统包括具有靠近第一金属层的第一半导体层的第一器件晶片，第一金属层包括设置在第一金属层氧化物内的第一导体。还包括具有靠近第二金属层的第二半导体层的第二器件晶片，该第二金属层包括设置在第二金属层氧化物内的第二导体。在第一金属层氧化物和第二金属层氧化物之间的氧化物接合界面处，第一金属层氧化物的前侧结合到第二金属层氧化物的前侧。导电路径将第一导体耦合到第二导体，导电材料形成在蚀刻在第一导体和第二导体之间的空腔中，并通过氧化物接合界面从第二器件晶片的背面蚀刻穿过第二半导体层。

89. 发明授权

US08373243B2 Seal ring support for backside illuminated image sensor 有权
标题翻译：背面照明图像传感器的密封环支撑
公开(公告)号：US08373243B2
公开(公告)日：2013-02-12
申请号：US12986032
申请日：2011-01-06
申请人： Hsin-Chih Tai , Vincent Venezia , Yin Qian , Duli Mao , Keh-Chiang Ku
发明人： Hsin-Chih Tai , Vincent Venezia , Yin Qian , Duli Mao , Keh-Chiang Ku
IPC分类号： H01L31/12
CPC分类号： H01L27/14643 , H01L27/14636 , H01L27/1464
摘要： A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.
摘要翻译：具有密封环支撑件的背面照明成像传感器包括具有形成在外延层的前侧的成像阵列的外延层。金属叠层耦合到外延层的前侧，其中金属堆叠包括形成在成像传感器的边缘区域中的密封环。包括从外延层的背面延伸到密封环的金属焊盘以露出金属焊盘的开口。密封环支撑件设置在金属垫上并且在开口内，以在结构上支撑密封环。

90. 发明申请

US20120319242A1 Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image Sensors 审中-公开
标题翻译：用于在图像传感器中形成掺杂隔离区域的掺杂剂植入硬掩模
公开(公告)号：US20120319242A1
公开(公告)日：2012-12-20
申请号：US13164563
申请日：2011-06-20
申请人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Keh-Chiang Ku , Yin Qian , Gang Chen , Rongsheng Yang , Howard Rhodes
发明人： Duli Mao , Hsin-Chih Tai , Vincent Venezia , Keh-Chiang Ku , Yin Qian , Gang Chen , Rongsheng Yang , Howard Rhodes
IPC分类号： H01L29/02 , H01L31/02
CPC分类号： H01L21/26513 , H01L21/76237 , H01L27/1463 , H01L27/14689
摘要： Forming a doped isolation region in a substrate during manufacture of an image sensor. A method of an aspect includes forming a hardmask layer over the substrate, and forming a photoresist layer over the hardmask layer. An opening is formed in the photoresist layer over an intended location of the doped isolation region. An opening is etched in the hardmask layer by exposing the hardmask layer to one or more etchants through the opening. The opening in the hardmask layer may have a width of less than 0.4 micrometers. The doped isolation region may be formed in the substrate beneath the opening in the hardmask layer by performing a dopant implantation that introduces dopant through the opening in the hardmask layer. The method of an aspect may include forming sidewall spacers on sidewalls of the opening in the hardmask layer and using the sidewall spacers as a dopant implantation mask.
摘要翻译：在图像传感器的制造期间在衬底中形成掺杂的隔离区域。一种方面的方法包括在衬底上形成硬掩模层，以及在硬掩模层上形成光致抗蚀剂层。在掺杂隔离区域的预定位置上的光致抗蚀剂层中形成开口。通过将硬掩模层暴露于通过开口的一个或多个蚀刻剂，在硬掩模层中蚀刻开口。硬掩模层中的开口可以具有小于0.4微米的宽度。可以通过执行通过硬掩模层中的开口引入掺杂剂的掺杂剂注入，在硬掩模层中的开口下方的衬底中形成掺杂隔离区。一方面的方法可以包括在硬掩模层中的开口的侧壁上形成侧壁间隔物，并且使用侧壁间隔物作为掺杂剂注入掩模。

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