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    • 84. 发明授权
    • PCMO resistor trimmer
    • PCMO电阻微调器
    • US07106120B1
    • 2006-09-12
    • US10625647
    • 2003-07-22
    • Sheng Teng Hsu
    • Sheng Teng Hsu
    • H03L5/00
    • G11C16/3436G11C11/5678G11C11/5685G11C13/0004G11C13/0007G11C13/0064G11C13/0069G11C2013/0073G11C2211/5634G11C2213/31
    • Using programmable resistance material for a matching resistor, a resistor trimming circuit is designed to reversibly trim a matching resistor to match a reference resistor. The programmable resistance materials such as metal-amorphous silicon metal materials, phase change materials or perovskite materials are typically used in resistive memory devices and have the ability to change the resistance reversibly and repeatably with applied electrical pulses. The present invention reversible resistor trimming circuit comprises a resistance bridge network of a matching resistor and a reference resistor to provide inputs to a comparator circuit for generating a comparing signal indicative of the resistance difference. This comparing signal can be used to control a feedback circuit to provide appropriate electrical pulses to the matching resistor to modify the resistance of the matching resistor to match that of the reference resistor.
    • 使用可编程电阻材料进行匹配电阻,电阻微调电路设计为可逆地修整匹配电阻以匹配参考电阻。 诸如金属非晶硅金属材料,相变材料或钙钛矿材料的可编程电阻材料通常用于电阻存储器件中,并且具有通过施加的电脉冲可逆地和可重复地改变电阻的能力。 本发明的可逆电阻微调电路包括匹配电阻器的电阻桥网络和参考电阻器,以向比较器电路提供输入,以产生指示电阻差的比较信号。 该比较信号可用于控制反馈电路以向匹配电阻器提供适当的电脉冲以修改匹配电阻器的电阻以匹配参考电阻器的电阻。
    • 85. 发明授权
    • Ferroelectric transistor gate stack with resistance-modified conductive oxide
    • 具有电阻改性导电氧化物的铁电晶体管栅极叠层
    • US07098496B2
    • 2006-08-29
    • US11184659
    • 2005-07-18
    • Tingkai LiSheng Teng Hsu
    • Tingkai LiSheng Teng Hsu
    • H01L29/76H01L29/94H01L31/113H01L31/119
    • H01L21/28291H01L29/78391
    • The present invention discloses a novel ferroelectric transistor design using a resistive oxide film in place of the gate dielectric. By replacing the gate dielectric with a resistive oxide film, and by optimizing the value of the film resistance, the bottom gate of the ferroelectric layer is electrically connected to the silicon substrate, eliminating the trapped charge effect and resulting in the improvement of the memory retention characteristics. The resistive oxide film is preferably a doped conductive oxide in which a conductive oxide is doped with an impurity species. The doped conductive oxide is most preferred to be In2O3 with the dopant species being hafnium oxide, zirconium oxide, lanthanum oxide, or aluminum oxide.
    • 本发明公开了一种使用电阻氧化膜代替栅极电介质的新型铁电晶体管设计。 通过用电阻氧化膜代替栅极电介质,并且通过优化膜电阻的值,铁电层的底栅电连接到硅衬底,消除了捕获的电荷效应并导致存储保持率的提高 特点 电阻氧化膜优选为其中掺杂有杂质物质的导电氧化物的掺杂导电氧化物。 掺杂的导电氧化物最优选为掺杂物质为氧化铪,氧化锆,氧化镧或氧化铝的In 2 N 3 O 3。
    • 87. 发明授权
    • PCMO spin-coat deposition
    • PCMO旋涂沉积
    • US07098043B2
    • 2006-08-29
    • US10759468
    • 2004-01-15
    • Wei-Wei ZhuangLisa H. SteckerGregory M. SteckerSheng Teng Hsu
    • Wei-Wei ZhuangLisa H. SteckerGregory M. SteckerSheng Teng Hsu
    • H01L21/00
    • G11C13/0007G11C2213/31H01L27/2409H01L27/2436H01L45/04H01L45/1233H01L45/147H01L45/1608H01L45/1683
    • A Pr1-XCaXMnO3 (PCMO) spin-coat deposition method for eliminating voids is provided, along with a void-free PCMO film structure. The method comprises: forming a substrate, including a noble metal, with a surface; forming a feature, such as a via or trench, normal with respect to the substrate surface; spin-coating the substrate with acetic acid; spin-coating the substrate with a first, low concentration of PCMO solution; spin-coating the substrate with a second concentration of PCMO solution, having a greater concentration of PCMO than the first concentration; baking and RTA annealing (repeated one to five times); post-annealing; and, forming a PCMO film with a void-free interface between the PCMO film and the underlying substrate surface. The first concentration of PCMO solution has a PCMO concentration in the range of 0.01 to 0.1 moles (M). The second concentration of PCMO solution has a PCMO concentration in the range of 0.2 to 0.5 M.
    • 提供了一种用于消除空隙的Pr 1-X C 3 Mn 3 O 3(PCMO)旋涂沉积方法,以及无空隙 PCMO薄膜结构。 该方法包括:用表面形成包括贵金属的基底; 形成相对于衬底表面正常的特征,例如通孔或沟槽; 用乙酸旋涂底物; 用第一种低浓度的PCMO溶液旋涂底物; 以第二浓度的PCMO溶液旋涂底物,其具有比第一浓度更高浓度的PCMO; 烘烤和RTA退火(重复1〜5次); 后退火; 并且在PCMO膜和下面的衬底表面之间形成具有无空隙界面的PCMO膜。 PCMO溶液的第一浓度的PCMO浓度范围为0.01至0.1摩尔(M)。 PCMO溶液的第二浓度的PCMO浓度范围为0.2-0.5M。
    • 88. 发明授权
    • Iridium oxide nanostructure
    • 氧化铱纳米结构
    • US07053403B1
    • 2006-05-30
    • US11339876
    • 2006-01-26
    • Fengyan ZhangGregory M. SteckerRobert A. BarrowcliffSheng Teng Hsu
    • Fengyan ZhangGregory M. SteckerRobert A. BarrowcliffSheng Teng Hsu
    • H01L29/10H01L29/12
    • H01L21/31111B81C1/00111B82Y10/00
    • A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.
    • 提供了用于构图氧化铱(IrOx)纳米结构的方法。 该方法包括:在第二区域附近形成衬底第一区域; 从覆盖第一区域的连续IrOx膜生长IrOx纳米结构; 同时从覆盖第二区域的非连续IrOx膜生长IrOx纳米结构; 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域; 并提升覆盖第二区域的IrOx纳米结构。 通常,第一区域由第一材料形成,第二区域由不同于第一材料的第二材料形成。 例如,第一种材料可以是难熔金属或难熔金属氧化物。 第二种材料可以是SiOx。 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域的步骤包括将衬底暴露于与IrOx比第二材料更具反应性的蚀刻剂。
    • 90. 发明授权
    • Iridium oxide nanostructure patterning
    • 氧化铱纳米结构图案
    • US07022621B1
    • 2006-04-04
    • US11013804
    • 2004-12-15
    • Fengyan ZhangGregory M. SteckerRobert A. BarrowcliffSheng Teng Hsu
    • Fengyan ZhangGregory M. SteckerRobert A. BarrowcliffSheng Teng Hsu
    • H01L21/461
    • H01L21/31111B81C1/00111B82Y10/00
    • A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.
    • 提供了用于构图氧化铱(IrOx)纳米结构的方法。 该方法包括:在第二区域附近形成衬底第一区域; 从覆盖第一区域的连续IrOx膜生长IrOx纳米结构; 同时从覆盖第二区域的非连续IrOx膜生长IrOx纳米结构; 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域; 并提升覆盖第二区域的IrOx纳米结构。 通常,第一区域由第一材料形成,第二区域由不同于第一材料的第二材料形成。 例如,第一种材料可以是难熔金属或难熔金属氧化物。 第二种材料可以是SiOx。 选择性地蚀刻由非连续IrOx膜暴露的第二区域的区域的步骤包括将衬底暴露于与IrOx比第二材料更具反应性的蚀刻剂。