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    • 82. 发明授权
    • Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication
    • 基于微机电系统的传感器,传感器阵列,感测系统,感测方法和制造方法
    • US06844214B1
    • 2005-01-18
    • US10604850
    • 2003-08-21
    • Ping MeiDecai SunRobert A. Street
    • Ping MeiDecai SunRobert A. Street
    • B81B3/00H01L21/00H01L23/48H01R11/22
    • B81B3/0021B81B2201/0292B81B2201/038B81B2201/047B81B2203/0118B81C2201/0167H01R12/52
    • A microelectromechanical system (MEMS) based sensor comprises: a substrate defining a plane; a first conductive material layer having a first stress, a first portion of the first conductive material layer being connected to the substrate and extending in a substantially parallel direction to the plane defined by the substrate and a second portion being disconnected from the substrate and extending in a substantially non-parallel direction to the plane defined by the substrate; and a sensor material layer formed over at least the second portion of the first conductive material layer, the sensor material layer having a second stress that is less than the first stress of the first conductive material layer. The stresses form a stress gradient that bends the second portion of the first conductive material layer and the sensor material layer formed over the second portion of the first conductive material layer away from the substrate.
    • 基于微机电系统(MEMS)的传感器包括:限定平面的基板; 具有第一应力的第一导电材料层,所述第一导电材料层的第一部分连接到所述衬底并且在基本上平行于由所述衬底限定的平面的方向上延伸,并且所述第二部分与所述衬底断开并且延伸到 基本上不平行于由衬底限定的平面的方向; 以及在所述第一导电材料层的至少第二部分上形成的传感器材料层,所述传感器材料层具有小于所述第一导电材料层的第一应力的第二应力。 应力形成应力梯度,该应力梯度使第一导电材料层的第二部分和形成在第一导电材料层的第二部分上方的传感器材料层远离衬底弯曲。
    • 83. 发明授权
    • Pixel circuit with selectable capacitor load for multi-mode X-ray imaging
    • 具有可选电容负载的像素电路,用于多模式X射线成像
    • US06489619B2
    • 2002-12-03
    • US09844382
    • 2001-04-27
    • Robert A. Street
    • Robert A. Street
    • G01T124
    • G01N23/04
    • Each pixel of an image sensor array includes a capacitive load that is selectively coupled to or decoupled from the usual sensor capacitance to facilitate dual mode operation. During a first operating mode (e.g., a high-power operating mode such as radiography), a global enable signal is asserted to turn on a mode control transistor of each pixel that couples the selectable capacitive load to the sensor, thereby increasing the total capacitance of the pixels. During a second operating mode (e.g., a low-power operating mode such as fluoroscopy), the global enable signal is de-asserted, thereby decoupling the optional capacitive load from the sensor to minimize pixel capacitance. An amorphous silicon sensor includes an additional metal plate located below the lower sensor plate to provide the optional capacitive load. The additional metal plate is formed from the same metal layer that is used to fabricate the gate lines of the array.
    • 图像传感器阵列的每个像素包括电容负载,其选择性地耦合到通常的传感器电容或从通常的传感器电容去耦,以便于双模式操作。 在第一操作模式(例如,诸如放射线照相的大功率操作模式)期间,全局使能信号被断言以接通将可选容性负载耦合到传感器的每个像素的模式控制晶体管,从而增加总电容 的像素。 在第二操作模式(例如,诸如荧光透视的低功率操作模式)期间,全局使能信号被解除断言,从而使可选容性负载与传感器去耦,以使像素电容最小化。 非晶硅传感器包括位于下传感器板下方的附加金属板,以提供可选的容性负载。 附加的金属板由用于制造阵列的栅极线的相同的金属层形成。
    • 84. 发明授权
    • Amorphous silicon sensor array with reduced number of address lines
    • 非晶硅传感器阵列,地址线数量减少
    • US6137151A
    • 2000-10-24
    • US752667
    • 1996-11-19
    • Robert A. Street
    • Robert A. Street
    • H01L27/146H01L29/78
    • H01L27/14603H01L27/14643
    • An amorphous silicon sensor array is comprised of a plurality of individually addressable sensor elements. A control circuit, including gate lines, data lines and a control lines, selects the elements for readout discharge. The number of gate lines, data lines and control lines are reduced from conventional sensor array selective discharge control systems. The array includes a plurality of clusters of associated sensor elements wherein each element in a cluster includes a switch for switching integrated charge between the associated sensor elements. One of the gate lines and a one of the data lines is associated with each one of the clusters. The control line is associated with each of the sensor elements in each cluster for selectively and independently addressing for discharge the sensor elements in the clusters of the array.
    • 非晶硅传感器阵列由多个单独可寻址的传感器元件组成。 包括栅极线,数据线和控制线的控制电路选择用于读出放电的元件。 从常规传感器阵列选择性放电控制系统中减少了栅极线,数据线和控制线的数量。 阵列包括多个相关联的传感器元件簇,其中簇中的每个元件包括用于在相关联的传感器元件之间切换积分电荷的开关。 栅极线之一和数据线之一与每个集群相关联。 控制线与每个簇中的每个传感器元件相关联,用于选择性地且独立地寻址以排放阵列簇中的传感器元件。