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81. 发明授权

US06589329B1 Composition and process for production of copper circuitry in microelectronic device structures 失效
标题翻译：在微电子器件结构中生产铜电路的组成和工艺
公开(公告)号：US06589329B1
公开(公告)日：2003-07-08
申请号：US09522102
申请日：2000-03-09
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C23C1616
CPC分类号： C23C16/18 , C07F1/08 , C07F7/0803
摘要： Compositions useful for chemical vapor delivery (CVD) formation of copper layers in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head or for circuitization of packaging components. The copper precursor formulation may include one or more copper precursors, e.g., a precursor of the formula hfac(Cu)L where L is a low-cost ligand such as an alkene and/or alkyne such as [(hfac)Cu]2 (DMDVS). The formulation may include in addition to the copper precursor(s) one or more low-cost ligand species such as alkenes, alkynes, dienes and combinations thereof, to increase thermal stability of the formulation and provide enhanced vaporization properties for CVD.
摘要翻译：可用于半导体集成电路中铜层的化学气相传输（CVD）形成的组合物，例如半导体器件结构中的互连金属化，用于电镀的粘合种子层，用于沉积薄膜记录头或用于封装的电路化组件。铜前体制剂可以包括一种或多种铜前体，例如式hfac（Cu）L的前体，其中L是低成本配体如烯烃和/或炔烃，例如[（hfac）Cu] 2（ DMDVS）。除了铜前体之外，配方可以包括一种或多种低成本配体物质，例如烯烃，炔，二烯及其组合，以增加制剂的热稳定性并提供CVD的增强的气化性质。

82. 发明授权

US06458984B1 Chemical method for removal and analysis of boron impurities in tetraethylorthosilicate (TEOS) 失效
标题翻译：硼酸四乙酯（TEOS）中硼杂质的去除和分析的化学方法
公开(公告)号：US06458984B1
公开(公告)日：2002-10-01
申请号：US09540584
申请日：2000-03-31
申请人： Thomas H. Baum , Chongying Xu , Frank R. Hedges , David Daniel Bernhard , Brian L. Benac , Scott L. Battle , John M. Lansdown
发明人： Thomas H. Baum , Chongying Xu , Frank R. Hedges , David Daniel Bernhard , Brian L. Benac , Scott L. Battle , John M. Lansdown
IPC分类号： C07F704
CPC分类号： C07F7/045 , C07F7/20
摘要： A method of purifying tetraethylorthosilicate (TEOS) to remove boron impurities therefrom, and a related method of analyzing TEOS to determine concentration of boron impurities therein.
摘要翻译：纯化原硅酸四乙酯（TEOS）以除去硼杂质的方法，以及分析TEOS以确定其中硼杂质浓度的相关方法。

83. 发明授权

US06337148B1 Copper source reagent compositions, and method of making and using same for microelectronic device structures 失效
标题翻译：铜源试剂组合物，以及制造和使用它们用于微电子器件结构的方法
公开(公告)号：US06337148B1
公开(公告)日：2002-01-08
申请号：US09318440
申请日：1999-05-25
申请人： Chongying Xu , Thomas H. Baum
发明人： Chongying Xu , Thomas H. Baum
IPC分类号： C07F108
CPC分类号： C07F1/08 , C07F1/005 , C23C16/18 , H01L21/28556 , Y10S428/901 , Y10T428/1291
摘要： Copper precursors useful in liquid delivery CVD for forming a copper-containing material on a substrate. The disclosed copper precursors are particularly useful for metallization of interconnections in semiconductor device structures.
摘要翻译：用于在基底上形成含铜材料的液体输送CVD中的铜前体。所公开的铜前体对于在半导体器件结构中的互连的金属化是特别有用的。

84. 发明申请

US20130029456A1 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS 有权
公开(公告)号：US20130029456A1
公开(公告)日：2013-01-31
申请号：US13622233
申请日：2012-09-18
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S.H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

85. 发明授权

US08241704B2 Chemical vapor deposition of high conductivity, adherent thin films of ruthenium 有权
标题翻译：化学气相沉积的高导电性，粘附的钌薄膜
公开(公告)号：US08241704B2
公开(公告)日：2012-08-14
申请号：US13089909
申请日：2011-04-19
申请人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
发明人： Bryan C. Hendrix , James J. Welch , Steven M. Bilodeau , Jeffrey F. Roeder , Chongying Xu , Thomas H. Baum
IPC分类号： C23C16/00 , C23C16/06
CPC分类号： C23C16/45557 , C23C16/0272 , C23C16/16 , C23C16/18
摘要： A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.
摘要翻译：描述了一种用于沉积具有高导电性和优异的基底附着性的钌薄膜的多步法。该方法包括沉积钌成核层，随后沉积高度导电的钌上层。使用低沉积速率的化学气相沉积（CVD）沉积两层。

86. 发明授权

US07838329B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films 有权
标题翻译：用于金属薄膜的CVD / ALD的锑和锗络合物
公开(公告)号：US07838329B2
公开(公告)日：2010-11-23
申请号：US12307101
申请日：2007-05-12
申请人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Melissa A. Petruska , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/06
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

87. 发明授权

US07838073B2 Tantalum amide complexes for depositing tantalum-containing films, and method of making same 有权
标题翻译：用于沉积含钽膜的钽酰胺配合物及其制备方法
公开(公告)号：US07838073B2
公开(公告)日：2010-11-23
申请号：US12773650
申请日：2010-05-04
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum
IPC分类号： C23C16/00 , C07F9/00
CPC分类号： C23C16/45553 , C07F9/005 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45525 , H01L21/28556 , Y10T29/49117
摘要： Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.
摘要翻译：钽前体可用于通过诸如化学气相沉积和原子层沉积的方法在衬底上沉积氮化钽或钽氧化物材料。这些前体可用于在具有铜金属化和/或铁电薄膜的微电子器件结构上形成钽基扩散阻挡层。

88. 发明授权

US07750173B2 Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films 有权
标题翻译：具有螯合配体的钽酰氨基复合物，可用于TaN和Ta205薄膜的CVD和ALD
公开(公告)号：US07750173B2
公开(公告)日：2010-07-06
申请号：US12013433
申请日：2008-01-12
申请人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C07F9/00 , C01G35/00
CPC分类号： C23C16/18 , C23C16/34 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.
摘要翻译：公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层和足够的碳，使得含Ta层是无定形的。根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备气氛，例如任选地含有还原剂的气体或等离子体。

89. 发明授权

US07709384B2 Tantalum amide complexes for depositing tantalum-containing films, and method of making same 失效
公开(公告)号：US07709384B2
公开(公告)日：2010-05-04
申请号：US12119463
申请日：2008-05-12
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum
IPC分类号： H01L21/44 , C07F9/00
CPC分类号： C23C16/45553 , C07F9/005 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45525 , H01L21/28556 , Y10T29/49117
摘要： Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

90. 发明申请

US20100062150A1 PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 有权
标题翻译：用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物
公开(公告)号：US20100062150A1
公开(公告)日：2010-03-11
申请号：US12619165
申请日：2009-11-16
申请人： Chongying Xu , Tianniu Chen , Thomas M. Cameron , Jeffrey F. Roeder , Thomas H. Baum
发明人： Chongying Xu , Tianniu Chen , Thomas M. Cameron , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： B05D5/12
CPC分类号： C23C14/088 , C07F17/00 , C23C16/409 , C23C16/45553
摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
摘要翻译：用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布材料制造闪存等微电子器件。

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