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    • 81. 发明授权
    • Controlled release bupropion formulation
    • 受控释放的安非他酮制剂
    • US06210716B1
    • 2001-04-03
    • US09259133
    • 1999-02-26
    • Chih-Ming ChenJianbo XieSteve Jan
    • Chih-Ming ChenJianbo XieSteve Jan
    • A61K914
    • A61K9/2081A61K9/5078A61K9/5084
    • A controlled release dosage form of bupropion hydrochloride which comprises: (a) a first pellet having a core of bupropion hydrochloride and hydroxypropyl methylcellulose at a weight ratio of 10:1 to 30:1 and a coating of a mixture of an acrylic resin which is soluble in acidic media and ethyl cellulose; (b) a second pellet having a core of bupropion hydrochloride and hydroxypropyl methylcellulose at a ratio of 10:1 to 30:1; an inner coating of a mixture of an acrylic resin which is soluble in acidic media and a water insoluble polymer and an outer coating which comprises an enteric coating polymer.
    • 一种盐酸安非他酮的控释剂型,其包含:(a)具有核心的盐酸安非他酮和羟丙基甲基纤维素的重量比为10:1至30:1的第一颗粒和丙烯酸树脂的混合物的涂层,所述丙烯酸树脂是 可溶于酸性介质和乙基纤维素;(b)具有10:1至30:1比例的盐酸安非他酮核心和羟丙基甲基纤维素的第二粒料; 可溶于酸性介质的丙烯酸树脂和水不溶性聚合物的混合物的内涂层和包含肠溶衣聚合物的外涂层。
    • 86. 发明授权
    • Method for manufacturing ETOX cell having damage-free source region
    • 制造具有无损源区的ETOX电池的方法
    • US5998262A
    • 1999-12-07
    • US65369
    • 1998-04-23
    • Chih-Ming Chen
    • Chih-Ming Chen
    • H01L21/8247H01L21/336
    • H01L27/11521
    • A method for manufacturing EPROM tunnel oxide cell having a damage-free source region. The method comprises the step of providing a substrate having a device region formed thereon, and then forming an ion-implanted region in the device area. Next, a gate oxide layer is formed over the substrate. Subsequently, a floating gate, a dielectric layer, a control gate and an oxide layer are sequentially formed above the substrate. This invention utilizes the implantation of a moderately heavy dose of ions into a device area prior to the formation of the gate oxide layer, so that a thicker gate oxide layer is formed above the source region. Hence, when the first polysilicon layer is etched in a subsequent self-aligned etching operation to establish the common source region, the thicker gate oxide layer can serve as a protective layer for the source region.
    • 一种具有无损源区的EPROM隧道氧化物电池的制造方法。 该方法包括提供其上形成有器件区域的衬底,然后在器件区域中形成离子注入区域的步骤。 接下来,在衬底上形成栅氧化层。 随后,在衬底上方依次形成浮置栅极,电介质层,控制栅极和氧化物层。 本发明利用在形成栅极氧化层之前将中等重量的离子注入器件区域,从而在源极区域上方形成较厚的栅极氧化物层。 因此,当在随后的自对准蚀刻操作中蚀刻第一多晶硅层以建立公共源极区域时,较厚的栅极氧化物层可以用作源极区域的保护层。
    • 90. 发明授权
    • Diltiazem controlled release formulation
    • 地尔硫卓控释制剂
    • US5567441A
    • 1996-10-22
    • US409449
    • 1995-03-24
    • Chih-Ming Chen
    • Chih-Ming Chen
    • A61K9/52A61K9/50A61K9/58A61K31/55A61K31/554A61K47/30A61K9/60A61K9/62
    • A61K9/5084A61K31/554A61K9/5078Y10S514/963
    • A once-a-day controlled release diltiazem formulation is described which includes:(a) from 20 to 50% by weight of enteric polymeric membrane coated pellets comprising a polymer membrane coated core which comprises a biologically inert core which is coated with a first layer which consists essentially of diltiazem and a polymeric binder; and a second layer which comprises a membrane comprising a pH dependent polymeric material; and(b) from 50% to 80% by weight of delayed pulse polymeric membrane coated pellets comprising a polymeric membrane coated core which comprises a biologically inert core which is coated with a first layer which consists essentially of diltiazem and a polymeric binder and a second layer which comprises a polymeric membrane which will substantially maintain its integrity in the varying pH conditions of the gastrointestinal tract but is permeable to diltiazem; and(c) a unit dose containment system.
    • 描述了一种一日一次的控释地尔硫卓制剂,其包括:(a)20至50重量%的包含聚合物膜包衣的核心的肠溶性聚合物膜包衣的丸剂,其包含生物惰性的芯,其涂覆有第一层 其基本上由地尔硫卓和聚合物粘合剂组成; 以及第二层,其包括包含pH依赖性聚合物材料的膜; 和(b)50%至80%重量的延迟脉冲聚合物膜包衣的丸剂,其包含聚合物膜包衣芯,其包含生物惰性芯,其涂覆有基本上由地尔硫卓和聚合物粘合剂组成的第一层, 其包含聚合物膜,其将在胃肠道的变化的pH条件下基本上保持其完整性,但是可渗透地尔硫卓; 和(c)单位剂量遏制系统。