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81. 发明申请

US20080035922A1 Display Apparatus and Enable Circuit Thereof 有权
标题翻译：显示装置及其使能电路
公开(公告)号：US20080035922A1
公开(公告)日：2008-02-14
申请号：US11617086
申请日：2006-12-28
申请人： Kuo-Sheng Lee , Chi-Wen Chen
发明人： Kuo-Sheng Lee , Chi-Wen Chen
IPC分类号： H01L23/58
CPC分类号： G09G3/006 , G09G3/20
摘要： A display apparatus comprises a display array and an enable circuit. The enable circuit comprises a set of diodes and a set of transistors. The diode element comprises a first contact and a second contact. The set of transistors comprises a first contact, a second contact, and a third contact. The first contact of the set of transistors is connected to the display array. The second contact of the set of transistors receives a test signal to test the display array. The third contact of the set of transistors is connected to the first contact of the diode element. The second contact of the diode element receives an enable signal to activate the enable circuit.
摘要翻译：显示装置包括显示阵列和使能电路。使能电路包括一组二极管和一组晶体管。二极管元件包括第一触点和第二触点。该组晶体管包括第一触点，第二触点和第三触点。该组晶体管的第一接点连接到显示器阵列。晶体管组的第二个接点接收测试信号以测试显示器阵列。该组晶体管的第三个接点连接到二极管元件的第一个触点。二极管元件的第二触点接收使能信号以激活使能电路。

82. 发明授权

US07235443B2 Non-volatile memory and method of manufacturing floating gate 失效
标题翻译：非易失性存储器和制造浮栅的方法
公开(公告)号：US07235443B2
公开(公告)日：2007-06-26
申请号：US11461780
申请日：2006-08-02
申请人： Ting-Chang Chang , Shuo-Ting Yan , Po-Tsun Liu , Chi-Wen Chen , Tsung-Ming Tsai , Ya-Hsiang Tai , Simon-M Sze
发明人： Ting-Chang Chang , Shuo-Ting Yan , Po-Tsun Liu , Chi-Wen Chen , Tsung-Ming Tsai , Ya-Hsiang Tai , Simon-M Sze
IPC分类号： H01L21/336
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332 , H01L29/66825 , H01L29/7881
摘要： A method of manufacturing a floating gate is provided. The method includes the steps of forming a tunneling layer on a substrate, and forming a film layer containing a semiconductor component on the tunneling layer. The film layer consists of a semiconductor film or nano-dots.
摘要翻译：提供一种制造浮动栅极的方法。该方法包括以下步骤：在衬底上形成隧穿层，并在隧穿层上形成含有半导体组分的膜层。膜层由半导体膜或纳米点组成。

83. 发明申请

US20070090345A1 Organic light emitting diode display 有权
标题翻译：有机发光二极管显示
公开(公告)号：US20070090345A1
公开(公告)日：2007-04-26
申请号：US11292629
申请日：2005-12-02
申请人： Yuan-Chun Wu , Chi-Wen Chen
发明人： Yuan-Chun Wu , Chi-Wen Chen
IPC分类号： H01L29/08
CPC分类号： H01L27/124 , H01L27/0248 , H01L27/3272
摘要： An organic light emitting diode (OLED) display panel is provided. The OLED display panel includes a substrate, a conductive layer, an active matrix pixel array and several thin film transistors (TFTs). The conductive layer having several openings is disposed above the substrate. The active matrix pixel array having several pixels is disposed above the conductive layer. Each pixel has a display region and a non-display region. The display regions correspond to the openings. The TFTs are correspondingly disposed inside the pixels and correspondingly positioned inside the non-display regions. Each TFT includes a channel layer, a source, a drain and a gate. The channel layer is disposed above the conductive layer. The source and the drain are disposed above channel layer and respectively contact with the two opposite sides of the channel layer. The gate is disposed above the channel layer and positioned between the source and the drain.
摘要翻译：提供了一种有机发光二极管（OLED）显示面板。 OLED显示面板包括衬底，导电层，有源矩阵像素阵列和若干薄膜晶体管（TFT）。具有多个开口的导电层设置在基板上。具有几个像素的有源矩阵像素阵列设置在导电层的上方。每个像素具有显示区域和非显示区域。显示区域对应于开口。 TFT相应地设置在像素内并且相应地位于非显示区域内。每个TFT包括沟道层，源极，漏极和栅极。沟道层设置在导电层的上方。源极和漏极设置在沟道层上方并分别与沟道层的两个相对侧接触。栅极设置在沟道层上方并位于源极和漏极之间。

84. 发明申请

US20070085115A1 MEMORY CELL, PIXEL STRUCTURE AND MANUFACTURING PROCESS OF MEMORY CELL FOR DISPLAY PANELS 审中-公开
标题翻译：存储单元，显示面板存储单元的像素结构和制造过程
公开(公告)号：US20070085115A1
公开(公告)日：2007-04-19
申请号：US11308612
申请日：2006-04-12
申请人： Hung-Tse Chen , Chi-Lin Chen , Yu-Cheng Chen , Chi-Wen Chen , Ting-Chang Chang
发明人： Hung-Tse Chen , Chi-Lin Chen , Yu-Cheng Chen , Chi-Wen Chen , Ting-Chang Chang
IPC分类号： H01L31/113 , H01L31/062 , H01L21/84 , H01L21/00
CPC分类号： H01L27/1214 , H01L29/40117 , H01L29/66833
摘要： A memory cell, suitable for being disposed on a substrate, comprises a poly-Si island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-Si island is disposed on the substrate and includes a source doped region, a drain doped region and a channel region there-between. The first dielectric layer is disposed on the poly-Si island, the trapping layer is disposed on the first dielectric layer, the second dielectric layer is disposed on the trapping layer and the control gate is disposed on the second dielectric layer. The above-described memory cell can be integrated into the manufacturing process of a low temperature polysilicon LCD panel (LTPS LCD panel) or an organic light emitting display panel (OLED panel).
摘要翻译：适用于设置在基板上的存储单元包括多晶硅岛，第一介电层，俘获层，第二介电层和控制栅。多晶硅岛设置在衬底上，包括源极掺杂区，漏极掺杂区和其间的沟道区。第一介电层设置在多晶硅岛上，俘获层设置在第一介电层上，第二介电层设置在俘获层上，控制栅设置在第二介质层上。上述存储单元可以集成到低温多晶硅LCD面板（LTPS LCD面板）或有机发光显示面板（OLED面板）的制造过程中。

85. 发明申请

US20070056207A1 Electric insect trap 审中-公开
标题翻译：电昆虫陷阱
公开(公告)号：US20070056207A1
公开(公告)日：2007-03-15
申请号：US11227862
申请日：2005-09-14
申请人： Chi-Wen Chen
发明人： Chi-Wen Chen
IPC分类号： A01M1/22 , A01M1/04
CPC分类号： A01M1/223 , A01M1/026 , A01M1/04
摘要： An electric insect trap includes a base, an insect attracting unit provided on the base, a high voltage grid unit provided on the base and disposed to surround the insect attracting unit, a detector unit coupled electrically to the high voltage grid unit and operable so as to generate a detector signal corresponding to an insect-electrocuting state of the high voltage grid unit, and an indicator unit coupled electrically to the detector unit and operable so as to indicate number of insects electrocuted by the high voltage grid unit based on the detector signal received from the detector unit.
摘要翻译：电动昆虫捕获器包括基座，设置在基座上的昆虫吸引单元，设置在基座上并设置成围绕昆虫吸引单元的高压格栅单元，检测器单元，电连接到高压电网单元，可操作为以产生对应于高电压电网单元的昆虫电切状态的检测器信号，以及指示器单元，其电连接到检测器单元并且可操作以指示基于检测器信号由高压电网单元触电的昆虫的数量从检测器单元接收。

86. 发明申请

US20070042536A1 Thin film transistor and method for manufacturing the same 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070042536A1
公开(公告)日：2007-02-22
申请号：US11372123
申请日：2006-03-10
申请人： Chi-Wen Chen , Jen-Chien Peng , Yun-Sheng Chen
发明人： Chi-Wen Chen , Jen-Chien Peng , Yun-Sheng Chen
IPC分类号： H01L21/84
CPC分类号： H01L29/78621 , H01L29/66765 , H01L29/78624
摘要： A method for manufacturing a thin film transistor of the invention comprises steps of: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a polysilicon layer on the gate insulating layer; forming an etching-stop layer on the polysilicon layer and corresponding to the gate electrode; forming a heavily doped polysilicon layer on the etching-stop layer and the polysilicon layer, the heavily doped polysilicon layer exposing a part of the etching-stop layer; and forming a source electrode and a drain electrode on the heavily doped polysilicon layer, and the source and drain electrode relatively positioned above the two sides of the gate electrode.
摘要翻译：本发明的薄膜晶体管的制造方法包括以下步骤：在基板上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅极绝缘层上形成多晶硅层; 在所述多晶硅层上形成对应于所述栅电极的蚀刻停止层; 在所述蚀刻停止层和所述多晶硅层上形成重掺杂多晶硅层，所述重掺杂多晶硅层暴露所述蚀刻停止层的一部分; 并且在重掺杂多晶硅层上形成源电极和漏电极，并且源电极和漏电极相对位于栅极两侧的上方。

87. 发明申请

US20070008061A1 Electric plug 审中-公开
标题翻译：电插头
公开(公告)号：US20070008061A1
公开(公告)日：2007-01-11
申请号：US11174855
申请日：2005-07-05
申请人： Chi-Wen Chen
发明人： Chi-Wen Chen
IPC分类号： H01H85/02 , H01H85/46 , H01H85/30
CPC分类号： H01R13/68 , H01H85/0418
摘要： An electric plug includes a housing which has front and rear walls, a fuse-receiving space, and a first aperture provided in the front wall. First and second conductive members are mounted inside the housing and project outwardly from the front wall. The second conductive member has a first fuse contact part extending into the fuse-receiving space. First and second wire conductors extend into the housing through the rear wall. The second wire conductor has a second fuse contact part extending into the fuse-receiving space. A first fuse member is disposed in the fuse-receiving space and contacts first and second fuse contact parts of the second conductive member and wire conductor. A cover plate covers the first aperture and has two insert holes for outward extension of the first and second conductive members.
摘要翻译：电插头包括具有前壁和后壁的壳体，保险丝容纳空间和设置在前壁中的第一孔。第一和第二导电构件安装在壳体内并从前壁向外突出。第二导电构件具有延伸到熔丝容纳空间中的第一熔丝接触部分。第一和第二导线通过后壁延伸到壳体中。第二导体导体具有延伸到熔丝容纳空间中的第二熔丝接触部分。第一保险丝构件设置在保险丝容纳空间中，并接触第二导电构件和线导体的第一和第二保险丝接触部分。盖板覆盖第一孔，并且具有用于第一和第二导电构件向外延伸的两个插入孔。

88. 发明申请

US20060270158A1 NON-VOLATILE MEMORY AND METHOD OF MANUFACTURING FLOATING GATE 失效
公开(公告)号：US20060270158A1
公开(公告)日：2006-11-30
申请号：US11461780
申请日：2006-08-02
申请人： Ting-Chang Chang , Shuo-Ting Yan , Po-Tsun Liu , Chi-Wen Chen , Tsung-Ming Tsai , Ya-Hsiang Tai , Simon-M Sze
发明人： Ting-Chang Chang , Shuo-Ting Yan , Po-Tsun Liu , Chi-Wen Chen , Tsung-Ming Tsai , Ya-Hsiang Tai , Simon-M Sze
IPC分类号： H01L21/336 , H01L21/44
CPC分类号： B82Y10/00 , H01L21/28273 , H01L29/42332 , H01L29/66825 , H01L29/7881
摘要： A method of manufacturing a floating gate is provided. The method includes the steps of forming a tunneling layer on a substrate, and forming a film layer containing a semiconductor component on the tunneling layer. The film layer consists of a semiconductor film or nano-dots.

89. 发明授权

US07094077B1 Electrical socket with slidable and removable receptacle 有权
标题翻译：电插座带滑动和可移动插座
公开(公告)号：US07094077B1
公开(公告)日：2006-08-22
申请号：US11174744
申请日：2005-07-05
申请人： Chi-Wen Chen
发明人： Chi-Wen Chen
IPC分类号： H01R25/00
CPC分类号： H01R25/142 , H01R13/4532 , H01R13/625
摘要： An electrical socket includes a sliding rail unit and a receptacle unit disposed slidably on the sliding rail unit. The receptacle unit includes a base and a receptacle seat mounted rotatably on the base. The receptacle seat is rotatable on the base between a conducting position, where the receptacle unit is retained on the sliding rail unit, and a non-conducting position, where the receptacle unit is removable from the sliding rail unit.
摘要翻译：电插座包括滑轨单元和可滑动地布置在滑轨单元上的插座单元。插座单元包括基座和可旋转地安装在基座上的插座座。插座座可在底座上转动，导电位置（插座单元被保持在滑轨单元上）和非导电位置之间，其中插座单元可从滑轨单元移除。

90. 发明申请

US20060072546A1 IP telephony apparatus providing simultaneous SIP communication for multiple IP phones and method for the same 有权
公开(公告)号：US20060072546A1
公开(公告)日：2006-04-06
申请号：US10948189
申请日：2004-09-24
申请人： Chi-Wen Chen
发明人： Chi-Wen Chen
IPC分类号： H04L12/66
CPC分类号： H04L65/80 , H04L29/06027 , H04L65/1026 , H04L65/1036 , H04L65/1069
摘要： An IP telephony apparatus provides simultaneous SIP communication for multiple IP phones and a method is proposed for the same. The IP telephony apparatus comprises a network connection port connected to a network; a plurality of telephone connection ports connected to a plurality of telephone sets; a voice codec unit connected to the telephone connection ports and used for converting a voice signal to a digital voice packet and for converting a digital voice packet to a voice signal; and an IP telephony allocation unit connected to the network connection port and the plurality of telephone connection ports. The IP telephony allocation unit creates an SIP control block containing an SIP call-leg for a local SIP number, and allocates the SIP control block to a destination telephone set according to the SIP call-leg, whereby the telephone sets have bi-directional digital voice packet transmission with a remote SIP number.

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