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81. 发明授权

US5563425A Photoelectrical conversion device and generating system using the same 失效
标题翻译：光电转换装置及使用其的发电系统
公开(公告)号：US5563425A
公开(公告)日：1996-10-08
申请号：US149749
申请日：1993-11-10
申请人： Keishi Saito , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Ryo Hayashi , Masahiko Tonogaki
发明人： Keishi Saito , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Ryo Hayashi , Masahiko Tonogaki
IPC分类号： H01L31/04 , H01L31/052 , H01L31/075 , H01L31/20 , H01L29/04 , H01L31/36 , H01L31/376
CPC分类号： H01L31/065 , H01L31/056 , H01L31/075 , H01L31/204 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： An object of the present invention is to provide a photoelectrical conversion device in which recombination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.
摘要翻译：本发明的目的是提供一种光电转换装置，其中防止由光激发的载流子的复合，并且改善了空穴的开路电压和载流子范围，并提供了使用光电转换装置的发电系统。所述光电转换装置包括p层，i层和n层，其中所述光电转换装置通过层叠p层，i层和n层而形成，所述p层，i层和n层由非单晶硅半导体，i层含有锗原子，i层的带隙在i层的厚度方向上平滑地变化，带隙的最小值位于 i层的中心位置的p层和作为供体的价电子控制剂以及用作受体的另一价电子控制剂都掺杂到i层中。此外，p层或n层中的至少任一层形成为由主要由周期表的III族元素和/或其V族元素组成的层和包含该价电子层的层控制剂主要由硅原子组成。

82. 发明授权

US08654114B2 Thin film transistor circuit, light emitting display apparatus, and driving method thereof 失效
标题翻译：薄膜晶体管电路，发光显示装置及其驱动方法
公开(公告)号：US08654114B2
公开(公告)日：2014-02-18
申请号：US12667827
申请日：2008-07-29
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： G09G5/00
CPC分类号： G09G3/3258 , G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2320/0233 , G09G2320/043
摘要： In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.
摘要翻译：为了抑制电应力对使用TFT的TFT特性的影响，根据本发明的发光显示装置包括有机EL器件和用于驱动有机EL器件的驱动电路。驱动电路包括多个像素，每个像素具有薄膜晶体管，其阈值电压由于在栅极端子和源极端子之间施加的电应力而可逆地改变;以及电压施加单元，其将薄膜晶体管的栅极电位设置为高于源潜力。电压施加单元在薄膜晶体管未被驱动时在栅极端子和源极端子之间施加电应力，以便在阈值电压饱和到电应力的区域中驱动薄膜晶体管。

83. 发明授权

US07855379B2 Electron device using oxide semiconductor and method of manufacturing the same 有权
标题翻译：使用氧化物半导体的电子器件及其制造方法
公开(公告)号：US07855379B2
公开(公告)日：2010-12-21
申请号：US12123103
申请日：2008-05-19
申请人： Ryo Hayashi , Masafumi Sano
发明人： Ryo Hayashi , Masafumi Sano
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L27/1225
摘要： In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.
摘要翻译：在基板上设置有至少具有源电极，漏电极，包括沟道的半导体区域，栅极绝缘膜和栅极电极的多个薄膜晶体管的电子器件，设置在基板之间的器件分离区域多个薄膜晶体管和半导体区域由相同的金属氧化物层构成，半导体区域的电阻形成为低于器件分离区域的电阻。

84. 发明申请

US20050150773A1 Method for forming deposition film and method for producing photovoltaic device 审中-公开
标题翻译：用于形成沉积膜的方法和用于制造光伏器件的方法
公开(公告)号：US20050150773A1
公开(公告)日：2005-07-14
申请号：US10999926
申请日：2004-12-01
申请人： Satoru Yamada , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Masumitsu Iwata , Yusuke Miyamoto , Takaharu Kondo
发明人： Satoru Yamada , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Masumitsu Iwata , Yusuke Miyamoto , Takaharu Kondo
IPC分类号： C25D9/08 , C23C28/00 , C23C28/04 , C25D5/34 , C25D5/48 , H01L21/288 , H01L31/04
CPC分类号： C25D5/48 , C23C28/00 , C25D5/34
摘要： A method for forming a deposition film from an aqueous solution by electrochemical reaction includes the steps of: forming the targeted deposition film under primary deposition conditions; replacing at least part of members in contact with the solution or removing deposit on surfaces of the members; and depositing a film under secondary deposition conditions. These steps are performed in that order. Then, the deposition film is formed again under the primary deposition conditions. In the method, the resulting deposition film exhibits desired characteristics even after maintenance of the deposition apparatus.
摘要翻译：通过电化学反应从水溶液形成沉积膜的方法包括以下步骤：在初始沉积条件下形成目标沉积膜; 替换至少部分与溶液接触的构件或去除构件表面上的沉积物; 并在二次沉积条件下沉积薄膜。这些步骤按照顺序执行。然后，在初始沉积条件下再次形成沉积膜。在该方法中，即使在保存沉积设备之后，所得到的沉积膜也显示出期望的特性。

85. 发明授权

US06331474B1 Defect compensation method for semiconductor element 有权
标题翻译：半导体元件缺陷补偿方法
公开(公告)号：US06331474B1
公开(公告)日：2001-12-18
申请号：US09630525
申请日：2000-08-01
申请人： Ryo Hayashi , Keishi Saito
发明人： Ryo Hayashi , Keishi Saito
IPC分类号： H01L21322
CPC分类号： H01L21/67057 , H01L21/306 , H01L21/3221 , H01L29/78672 , H01L29/78684 , H01L31/186 , Y02E10/50 , Y02P70/521
摘要： A defect compensation method for a semiconductor element to compensate for defects of the semiconductor element, in which hot water is conducted with the semiconductor element to accomplish defect compensation. On the basis of this treatment, excessive progress of oxidation of the crystal grain boundary and retention of water and OH− groups in the film are provented.
摘要翻译：一种用于补偿半导体元件的缺陷的半导体元件的缺陷补偿方法，其中热水与半导体元件一起进行以实现缺陷补偿。在这种处理的基础上，证明了晶界的氧化过程和薄膜中水和OH-基团保留的过度进展。

86. 发明授权

US6132817A Method of manufacturing photoelectric transducer with improved ultrasonic and purification steps 失效
标题翻译：制造具有改进的超声波和净化步骤的光电传感器的方法
公开(公告)号：US6132817A
公开(公告)日：2000-10-17
申请号：US822607
申请日：1997-03-19
申请人： Nobuo Tokutake , Masafumi Sano , Ryo Hayashi , Makoto Higashikawa
发明人： Nobuo Tokutake , Masafumi Sano , Ryo Hayashi , Makoto Higashikawa
IPC分类号： H01L31/04 , H01L21/304 , H01L31/0392 , H01L31/052 , H01L31/076 , H01L31/20 , B05D3/10 , H05H1/24
CPC分类号： H01L31/076 , H01L31/03921 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a photoelectric transducer forms a functional film on a conductive substrate. The method comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, then allowing the surface of the conductive substrate to contact purified water so as to import uniform oxidation and then forming the functional film thereon. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atoms as the matrix.
摘要翻译：光电转换器的制造方法在导电性基板上形成功能膜。该方法包括将超声波清洗用含有水的清洗液施加到导电性基材上，然后使导电性基材的表面与净化水接触，进行均匀氧化，然后在其上形成功能膜。功能膜的特征在于，通过等离子体CVD法制备的金属层作为光反射层，反射增强层和半导体光电器件层，其包含含有硅原子作为基体的非单晶材料。

87. 发明授权

US5429685A Photoelectric conversion element and power generation system using the same 失效
标题翻译：光电转换元件和使用相同的发电系统
公开(公告)号：US5429685A
公开(公告)日：1995-07-04
申请号：US150813
申请日：1993-11-12
申请人： Keishi Saito , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Ryo Hayashi , Masahiko Tonogaki
发明人： Keishi Saito , Tatsuyuki Aoike , Masafumi Sano , Mitsuyuki Niwa , Ryo Hayashi , Masahiko Tonogaki
IPC分类号： H01L31/0392 , H01L31/052 , H01L31/065 , H01L31/075 , H01L31/18 , H01L31/20 , H01L31/0376 , H01L31/0384
CPC分类号： H01L31/065 , H01L31/03921 , H01L31/056 , H01L31/075 , H01L31/1884 , H01L31/202 , H01L31/204 , Y02E10/52 , Y02E10/548 , Y02P70/521 , Y10S136/293
摘要： The present invention provides a photovoltaic element in which the open-circuit voltage and the path length of holes are improved by preventing the recombination of photoexcited carriers.The p-i-n junction type photovoltaic element is composed of a p-type layer, an i-type layer of a laminated structure consisting of an i-type layer formed by RF plasma CVD on the p-type layer side and an i-type layer formed by microwave (.mu.W) CVD on the n-type layer side, or an i-type layer formed by microwave (.mu.W) plasma CVD on the p-type layer side and an i-type layer formed by RF plasma CVD on the n-type layer side, characterized in that the i-type layer formed by .mu.W plasma CVD is formed by a process in which a lower .mu.W energy and a higher RF energy than the .mu.W energy needed to decompose 100% of the source gas are simultaneously applied to a source gas containing Si and Ge at a pressure of 50 mTorr or less, such that the minimum value of the bandgap is shifted toward the p-type layer side, away from the center of the i-type layer, and the i-type layer formed by RF plasma CVD is formed 30 nm thick or less by using a source gas containing a silicon-containing gas at a deposition rate of 2 nm/sec or less.
摘要翻译：本发明提供一种光电元件，其中通过防止光激发载流子的复合，提高了开路电压和空穴的路径长度。 pin结型光电元件由p型层，由p型层侧的RF等离子体CVD形成的i型层构成的层叠结构的i型层和形成为i型层的i型层构成通过在n型层侧的微波（μW）CVD或在p型层侧由微波（μW）等离子体CVD形成的i型层和通过RF等离子体CVD形成的i型层 n型层侧，其特征在于，通过以下步骤形成由μW等离子体CVD形成的i型层，其中相比于分解100％的源所需的μW能量较低的μW能量和较高的RF能量在50mTorr以下的压力下将气体同时施加到含有Si和Ge的源气体，使得带隙的最小值朝着p型层侧偏离i型层的中心，通过使用含有含硅气体的源气体，通过RF等离子体CVD形成的i型层形成为30nm以下速度为2nm / sec以下。

88. 发明授权

US09373724B2 Method of driving transistor and device including transistor driven by the method 有权
标题翻译：驱动晶体管和器件的方法包括由该方法驱动的晶体管
公开(公告)号：US09373724B2
公开(公告)日：2016-06-21
申请号：US13005890
申请日：2011-01-13
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： H01L29/04 , H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78633
摘要： Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG≦VON1×C1/(C1+C2) to the second conductive layer.
摘要翻译：公开了一种驱动包括半导体层，第一绝缘层，第二绝缘层，第一导电层和第二导电层的晶体管的方法，使得半导体层设置在第一和第二绝缘层之间，一个表面与第一导电层接触的与第一导电层接触的与第一绝缘层相反的第一绝缘层的第一绝缘层与第二导电层接触的第二绝缘层与与半导体层接触的另一表面相对的一个表面。该方法包括将第二导电层施加满足VBG＆lt; N1E，VON1×C1 /（C1 + C2）的关系的电压VBG。

89. 发明授权

US08415198B2 Production method of thin film transistor using amorphous oxide semiconductor film 有权
标题翻译：使用非晶氧化物半导体膜的薄膜晶体管的制造方法
公开(公告)号：US08415198B2
公开(公告)日：2013-04-09
申请号：US12374665
申请日：2007-07-26
申请人： Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
发明人： Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.
摘要翻译： 1.一种薄膜晶体管的制造方法，其特征在于，具备包含非晶形氧化物半导体膜的有源层的薄膜晶体管，其特征在于，形成有源层的工序包括在引入氧分压为1×10 -5的气氛中形成氧化膜的第1工序， 3Pa以下，以及在第一工序后的氧化性气氛中退火氧化膜的第二工序。

90. 发明申请

US20110175674A1 METHOD OF DRIVING TRANSISTOR AND DEVICE INCLUDING TRANSISTOR DRIVEN BY THE METHOD 有权
标题翻译：驱动晶体管的方法和包括通过该方法驱动的晶体管的器件
公开(公告)号：US20110175674A1
公开(公告)日：2011-07-21
申请号：US13005890
申请日：2011-01-13
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： G05F1/10 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78633
摘要： Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG≦VON1×C1/(C1+C2) to the second conductive layer.
摘要翻译：公开了一种驱动包括半导体层，第一绝缘层，第二绝缘层，第一导电层和第二导电层的晶体管的方法，使得半导体层设置在第一和第二绝缘层之间，一个表面与第一导电层接触的与第一导电层接触的与第一绝缘层相反的第一绝缘层的第一绝缘层与第二导电层接触的第二绝缘层与与半导体层接触的另一表面相对的一个表面。该方法包括将第二导电层施加满足VBG＆lt; N1E，VON1×C1 /（C1 + C2）的关系的电压VBG。

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