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81. 发明授权

US08460057B2 Computer-implemented process control in chemical mechanical polishing 有权
标题翻译：化学机械抛光中计算机实现的过程控制
公开(公告)号：US08460057B2
公开(公告)日：2013-06-11
申请号：US13089189
申请日：2011-04-18
申请人： Boguslaw A. Swedek , Bret W. Adams , Sanjay Rajaram , David A. Chan , Manoocher Birang
发明人： Boguslaw A. Swedek , Bret W. Adams , Sanjay Rajaram , David A. Chan , Manoocher Birang
IPC分类号： B24B49/00 , B24B51/00
CPC分类号： B24B37/013 , B24B37/042 , B24B49/12 , B24B51/00 , H01L22/26
摘要： A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
摘要翻译：一种用于化学机械抛光中的过程控制的计算机实现方法，其中在计量站测量衬底的初始预抛光厚度，从衬底的初始厚度确定端点算法的参数，抛光衬底在抛光台处，当使用端点算法检测到端点标准时抛光停止。

82. 发明申请

US20130130413A1 APPARATUS AND METHOD FOR IN-SITU ENDPOINT DETECTION FOR SEMICONDUCTOR PROCESSING OPERATIONS 有权
标题翻译：用于半导体处理操作的现场端点检测的装置和方法
公开(公告)号：US20130130413A1
公开(公告)日：2013-05-23
申请号：US13745691
申请日：2013-01-18
申请人： Manoocher Birang , Nils Johansson , Allan Gleason
发明人： Manoocher Birang , Nils Johansson , Allan Gleason
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , B24B37/013 , B24B37/205 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , G01B11/0683
摘要： An endpoint detection method includes processing an outer surface of a substrate, directing an incident light beam through a window in an opaque metal body onto the surface being processed, receiving at a detector a reflected light beam from the substrate and generating a signal from the detector, and generating a signal based on the reflected light beam received at the detector, and detecting a processing endpoint. The signal is a time-varying cyclic signal that varies as the thickness of the layer varies over time, and detecting the processing endpoint includes detecting that a portion of a cycle of the cyclic signal has passed, the portion being less than a full cycle of the cyclic signal.
摘要翻译：端点检测方法包括处理衬底的外表面，将入射光束通过不透明金属体中的窗口引导到被处理的表面上，在检测器处接收来自衬底的反射光束，并从检测器产生信号并且基于在检测器处接收的反射光产生信号，并且检测处理端点。该信号是时变循环信号，其随着层的厚度随时间而变化，并且检测处理端点包括检测循环信号的周期的一部分已经过去，该部分小于全周期循环信号。

83. 发明授权

US08342906B2 Friction sensor for polishing system 有权
标题翻译：抛光系统摩擦传感器
公开(公告)号：US08342906B2
公开(公告)日：2013-01-01
申请号：US12433433
申请日：2009-04-30
申请人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
发明人： Gabriel Lorimer Miller , Manoocher Birang , Nils Johansson , Boguslaw A. Swedek , Dominic J. Benvegnu
IPC分类号： B24B49/00
CPC分类号： G01N19/02 , B24B37/013 , B24B49/16
摘要： A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.
摘要翻译：描述了用于监测经历抛光的基底的摩擦系数的系统，方法和装置。抛光垫组件包括包括抛光表面的抛光层，以及柔性地联接到抛光层上的衬底接触构件，其具有与衬底的暴露表面接触的顶表面。顶表面的至少一部分与抛光表面基本共面。提供传感器以测量基板接触构件的横向位移。一些实施例可以在化学机械抛光期间提供准确的端点检测以指示下层的曝光。

84. 发明授权

US08092274B2 Substrate polishing metrology using interference signals 失效
标题翻译：使用干涉信号的基板抛光计量
公开(公告)号：US08092274B2
公开(公告)日：2012-01-10
申请号：US12955690
申请日：2010-11-29
申请人： Manoocher Birang , Grigory Pyatigorsky
发明人： Manoocher Birang , Grigory Pyatigorsky
IPC分类号： B24B49/00
CPC分类号： B24B37/205 , B24B37/013 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , G01B11/06 , G01B11/0683
摘要： A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the polishing pad. The light-transmissive window has a light-diffusing bottom surface.
摘要翻译：用于化学机械抛光装置的抛光垫组件包括抛光垫，抛光垫具有抛光表面和与抛光表面相对的表面，用于附接到压板，以及形成在抛光垫中的固体透光窗。光透射窗比抛光垫更透光。透光窗具有光扩散底面。

85. 发明申请

US20100297917A1 APPARATUS AND METHOD FOR IN-SITU ENDPOINT DETECTION FOR CHEMICAL MECHANICAL POLISHING OPERATIONS 失效
标题翻译：用于化学机械抛光操作的现场端点检测的装置和方法
公开(公告)号：US20100297917A1
公开(公告)日：2010-11-25
申请号：US12850569
申请日：2010-08-04
申请人： Manoocher Birang , Nils Johansson , Allan Gleason
发明人： Manoocher Birang , Nils Johansson , Allan Gleason
IPC分类号： B24B49/04 , B24B49/12
CPC分类号： H01L22/12 , B24B37/013 , B24B37/205 , B24B47/12 , B24B49/04 , B24B49/12 , B24B51/00 , G01B11/0683
摘要： An apparatus for chemical mechanical polishing (CMP) of a wafer has a rotatable platen to hold a polishing pad, a polishing head for holding the wafer against the polishing pad, an optical monitoring system and a position sensor. The platen has a hole therein, the optical monitoring system includes a light source to direct a light beam through the aperture toward the wafer from a side of the wafer contacting the polishing pad and a detector to receive reflections of the light beam from the wafer, and the position sensor senses when the hole is adjacent the wafer such that the light beam generated by the light source can pass through the hole and impinge on the wafer.
摘要翻译：晶片的化学机械抛光（CMP）的装置具有可旋转的压板以保持抛光垫，用于将晶片保持在抛光垫上的抛光头，光学监视系统和位置传感器。压板在其中具有孔，光学监测系统包括光源，用于将光束通过孔径朝向晶片从晶片接触抛光垫的侧面和检测器接收来自晶片的光束的反射，并且位置传感器感测孔何时邻近晶片，使得由光源产生的光束可以穿过孔并撞击晶片。

86. 发明授权

US07837851B2 In-situ profile measurement in an electroplating process 失效
标题翻译：电镀工艺中的原位型材测量
公开(公告)号：US07837851B2
公开(公告)日：2010-11-23
申请号：US11137711
申请日：2005-05-25
申请人： Manoocher Birang , Nicolay Y. Kovarsky , Bernardo Donoso
发明人： Manoocher Birang , Nicolay Y. Kovarsky , Bernardo Donoso
IPC分类号： C25D21/12
CPC分类号： G01B7/06 , C25D7/123 , C25D17/001 , C25D21/12 , G01B7/287 , H01L21/67253 , Y10T428/24802
摘要： A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness profile may be generated from the thickness values.
摘要翻译：一种用于测量电化学电镀单元的电解质中的差分电压的方法和装置。电流密度根据测得的差分电压计算，并与电镀材料的厚度值相关。可以从厚度值产生实时厚度分布。

87. 发明申请

US20100279516A1 APPARATUS AND METHOD OF ALIGNING AND POSITIONING A COLD SUBSTRATE ON A HOT SURFACE 有权
标题翻译：在热表面上对准和定位冷基底的装置和方法
公开(公告)号：US20100279516A1
公开(公告)日：2010-11-04
申请号：US12839282
申请日：2010-07-19
申请人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh N. Nguyen , Manoocher Birang
IPC分类号： H01L21/26
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

88. 发明授权

US07400934B2 Methods and apparatus for polishing control 有权
标题翻译：抛光控制方法和装置
公开(公告)号：US07400934B2
公开(公告)日：2008-07-15
申请号：US11370493
申请日：2006-03-06
申请人： Manoocher Birang , Konstantin Y. Smekalin , David A. Chan
发明人： Manoocher Birang , Konstantin Y. Smekalin , David A. Chan
IPC分类号： G06F19/00 , G05B13/02
CPC分类号： B24B37/013 , B24B37/042 , B24B49/003 , B24B49/12
摘要： A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.
摘要翻译： CMP站可以通过使用由第一抛光晶片的在线计量站获得的数据来闭环控制，以影响后续抛光晶片的处理。第一个晶片经过内联计量站的抛光和测量。测量站在各点测量阵列电介质厚度，场介电厚度，阻挡残留厚度和金属残留厚度。然后将数据输入算法，并计算抛光参数输出。输出被发送到CMP站，用于补充或替换以前的抛光参数。随后的晶片在CMP站上使用修改的抛光参数进行研磨。

89. 发明申请

US20070209684A1 Copper deposition chamber having integrated bevel clean with edge bevel removal detection 审中-公开
标题翻译：铜沉积室具有整体斜面清洁和边缘斜面去除检测
公开(公告)号：US20070209684A1
公开(公告)日：2007-09-13
申请号：US11369590
申请日：2006-03-07
申请人： Chen-An Chen , Anh Nguyen , Manoocher Birang
发明人： Chen-An Chen , Anh Nguyen , Manoocher Birang
IPC分类号： B08B3/02
CPC分类号： H01L21/6708 , H01L21/67253
摘要： Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.
摘要翻译：本发明的实施例通常提供用于检测和控制半导体衬底的边缘斜面去除的装置和方法。本发明的一个实施例提供一种用于检查旋转基片的装置。该装置包括：衬底支撑件，被配置为在后侧支撑旋转衬底并围绕中心轴线旋转衬底;以及位于衬底支撑件上方的传感器，该传感器被配置为在同时移动的同时检查旋转衬底的前侧径向穿过衬底。

90. 发明申请

US20070099552A1 CONDUCTIVE PAD WITH ION EXCHANGE MEMBRANE FOR ELECTROCHEMICAL MECHANICAL POLISHING 失效
标题翻译：带有离子交换膜的电化学机械电化学机械抛光
公开(公告)号：US20070099552A1
公开(公告)日：2007-05-03
申请号：US11555145
申请日：2006-10-31
申请人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
发明人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
IPC分类号： B23F21/03
CPC分类号： B24B37/046 , B24B27/0023 , B24B37/24 , B24B37/26 , B24D3/34 , B82Y30/00
摘要： An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.
摘要翻译：提供了一种用于处理基板表面的制造和设备。在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括具有至少部分导电的抛光表面的主体的抛光制品。电极设置在其间具有介电材料的抛光表面下方。可以在抛光表面和电介质材料中形成多个孔，以至少部分地将电极暴露于抛光表面。可以在电极和抛光表面之间设置膜，其可透过离子和电流，以促进电极和抛光表面之间的连续性。

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