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    • 81. 发明授权
    • A/D conversion circuit for use with low-potential and high-potential power supplies
    • 用于低电位和高电位电源的A / D转换电路
    • US07760125B2
    • 2010-07-20
    • US12026901
    • 2008-02-06
    • Yoshiaki ShimizuHisao SuzukiKenji ItoMasashi Kijima
    • Yoshiaki ShimizuHisao SuzukiKenji ItoMasashi Kijima
    • H03M1/36
    • H03M1/0675H03M1/08H03M1/165H03M1/168H03M1/366H03M1/42H03M1/765
    • An A/D conversion circuit including a plurality of resistor elements connected in series between a low-potential power supply and a high-potential power supply. The A/D conversion circuit includes a plurality of comparators that compare a reference voltage divided by each of the resistor elements with an analog input voltage, the comparators having a sample-and-hold function for holding a sampled analog input voltage. The plurality of comparators also include a high-order bit comparator and a low-order bit comparator having different sampling sources. The high-order bit comparator may be configured to compare the analog input voltage and one of the reference voltages to obtain a determination result. The low-order bit comparator may old the analog voltage from the time that the low-order bit comparator retrieves the analog input voltage until the low-order bit comparator performs comparison.
    • 一种A / D转换电路,包括串联连接在低电位电源和高电位电源之间的多个电阻元件。 A / D转换电路包括将由每个电阻元件划分的参考电压与模拟输入电压进行比较的多个比较器,比较器具有用于保持采样的模拟输入电压的采样保持功能。 多个比较器还包括具有不同采样源的高位比较器和低位比较器。 高位比较器可以被配置为比较模拟输入电压和参考电压之一以获得确定结果。 低位比较器可以从低位比较器检索模拟输入电压直到低位比较器执行比较时的模拟电压为老。
    • 88. 发明授权
    • Semiconductor memory device and method for forming same
    • 半导体存储器件及其形成方法
    • US6088253A
    • 2000-07-11
    • US438844
    • 1999-11-12
    • Yoshiaki Shimizu
    • Yoshiaki Shimizu
    • G11C11/401G11C7/10G11C7/22G11C11/41H01L21/8242H01L27/108G11C5/02
    • G11C7/1078G11C7/1051G11C7/1072G11C7/22
    • A synchronous DRAM has a plurality of data pads formed into a data pad row, a plurality of data latch circuits for latching signals from each of the data pads, these data latch circuits being disposed in a region surrounded by a second straight line that is perpendicular to a first straight line that passes over the data pad row and that passes one end of the data pad row, and a third straight line that is parallel to the second straight line and that passes the other end of the data pad row. The length of interconnections from the plurality of data latch circuits to an internal clock signal generating circuit being made the same length, the length of the interconnection between each first stage circuit to each data latch circuit being made the same as the length of the interconnection from the internal clock signal generating circuit to the data latch circuits, and the first stage circuits, the data latch circuits, and the internal clock signal generating circuit being operated by a voltage that is dropped down from an external power supply.
    • 同步DRAM具有形成数据焊盘行的多个数据焊盘,用于锁存来自每个数据焊盘的信号的多个数据锁存电路,这些数据锁存电路设置在由垂直于第二直线的第二直线包围的区域中 到达经过数据焊盘行并且通过数据焊盘行的一端的第一直线,以及平行于第二直线并且通过数据焊盘行的另一端的第三直线。 从多个数据锁存电路到内部时钟信号发生电路的互连长度相同,每个第一级电路与每个数据锁存电路之间的互连长度与互连的长度相同 内部时钟信号发生电路到数据锁存电路,第一级电路,数据锁存电路和内部时钟信号发生电路由从外部电源下降的电压来操作。