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81. 发明申请

US20090230479A1 Hybrid Process for Forming Metal Gates of MOS Devices 有权
标题翻译： MOS器件金属门的混合工艺
公开(公告)号：US20090230479A1
公开(公告)日：2009-09-17
申请号：US12047113
申请日：2008-03-12
申请人： Peng-Fu Hsu , Yong-Tian Hou , Ssu-Yi Li , Kuo-Tai Huang , Mong Song Liang
发明人： Peng-Fu Hsu , Yong-Tian Hou , Ssu-Yi Li , Kuo-Tai Huang , Mong Song Liang
IPC分类号： H01L27/092
CPC分类号： H01L21/823857 , H01L21/823842 , H01L27/092
摘要： A semiconductor structure includes a first MOS device including a first gate, and a second MOS device including a second gate. The first gate includes a first high-k dielectric over a semiconductor substrate; a second high-k dielectric over the first high-k dielectric; a first metal layer over the second high-k dielectric, wherein the first metal layer dominates a work-function of the first MOS device; and a second metal layer over the first metal layer. The second gate includes a third high-k dielectric over the semiconductor substrate, wherein the first and the third high-k dielectrics are formed of same materials, and have substantially a same thickness; a third metal layer over the third high-k dielectric, wherein the third metal layer and the second metal layer are formed of same materials, and have substantially a same thickness; and a fourth metal layer over the third metal layer.
摘要翻译：半导体结构包括包括第一栅极的第一MOS器件和包括第二栅极的第二MOS器件。第一栅极包括在半导体衬底上的第一高k电介质; 第一高k电介质上的第二高k电介质; 在所述第二高k电介质上的第一金属层，其中所述第一金属层支配所述第一MOS器件的功函数; 以及在所述第一金属层上的第二金属层。第二栅极包括半导体衬底上的第三高k电介质，其中第一和第三高k电介质由相同的材料形成，并具有基本上相同的厚度; 在所述第三高k电介质上的第三金属层，其中所述第三金属层和所述第二金属层由相同的材料形成，并且具有基本相同的厚度; 以及在第三金属层上的第四金属层。

82. 发明申请

US20090108365A1 HIGH-K DIELECTRIC METAL GATE DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME 有权
标题翻译：高K介电金属栅组件结构及其形成方法
公开(公告)号：US20090108365A1
公开(公告)日：2009-04-30
申请号：US11926830
申请日：2007-10-29
申请人： Joshua Tseng , Kang-Cheng Lin , Ji-Yi Yang , Kuo-Tai Huang , Ryan Chia-Jen Chen
发明人： Joshua Tseng , Kang-Cheng Lin , Ji-Yi Yang , Kuo-Tai Huang , Ryan Chia-Jen Chen
IPC分类号： H01L27/092 , H01L21/3205
CPC分类号： H01L21/823857 , H01L21/823842
摘要： A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric. A process for simultaneously forming the NMOS and PMOS gate structures includes forming the high-k gate dielectric material, and the work function tuning layer thereover, then selectively removing the work function tuning layer from the NMOS region and carrying out a plasma treatment to selectively dope the high-k gate dielectric material in the NMOS region with a dopant impurity while the high-k gate dielectric in the PMOS region is substantially free of the dopant impurity.
摘要翻译：金属栅极/高k电介质半导体器件提供形成在半导体衬底上的NMOS栅极结构和PMOS栅极结构。 NMOS栅极结构包括用诸如La的掺杂剂杂质处理的高k栅极电介质，并且PMOS栅极结构的高k栅极电介质材料缺乏该掺杂杂质，并且还包括高功率调制层， k栅极电介质。用于同时形成NMOS和PMOS栅极结构的工艺包括在其上形成高k栅极介电材料和功函数调谐层，然后从NMOS区选择性地去除功函数调谐层，并进行等离子体处理以选择性地掺杂具有掺杂剂杂质的NMOS区域中的高k栅极电介质材料，而PMOS区域中的高k栅极电介质基本上不含掺杂剂杂质。

83. 发明申请

US20090014985A1 Foldable Toy Stroller 有权
标题翻译：可折叠玩具推车
公开(公告)号：US20090014985A1
公开(公告)日：2009-01-15
申请号：US11776739
申请日：2007-07-12
申请人： Ming-Tai Huang
发明人： Ming-Tai Huang
IPC分类号： B62M7/06
CPC分类号： B62B7/068 , B62B7/044 , B62B7/083 , B62B2205/02 , B62B2205/22
摘要： A foldable toy stroller includes two main rods and two extension rods whose upper ends are mounted to lower ends of the main rods. Lower ends of the extension rods are rotatably mounted to two ends of a front-wheel base. A sliding seat is slidably mounted on a central rod having an end connected to the front-wheel base. Two rear wheel support rods are provided and each include a first end pivotably connected to the front wheel base and a second end to which a rear wheel is mounted. Pivotably connected to the sliding seat are two struts whose upper ends are pivotably connected to upper ends of the main rods. Two connecting rods are pivotably connected between the rear wheel support rods and the sliding seat. Each rear wheel support rod and each connecting rod are pivotable toward or away from the central rod for folding or unfolding operation.
摘要翻译：可折叠玩具童车包括两个主杆和两个延伸杆，其上端安装到主杆的下端。延伸杆的下端可旋转地安装在前轮底座的两端。滑动座可滑动地安装在具有连接到前轮底座的端部的中心杆上。提供两个后轮支撑杆，每个包括可枢转地连接到前轮底座的第一端和安装后轮的第二端。可枢转地连接到滑动座的是两个支柱，其上端可枢转地连接到主杆的上端。两个连杆可枢转地连接在后轮支撑杆和滑动座之间。每个后轮支撑杆和每个连杆可以朝向或远离中心杆枢转以折叠或展开操作。

84. 发明申请

US20080318405A1 METHOD OF FABRICATING GATE STRUCTURE 有权
标题翻译：制造门式结构的方法
公开(公告)号：US20080318405A1
公开(公告)日：2008-12-25
申请号：US12192128
申请日：2008-08-15
申请人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/3205
CPC分类号： H01L21/28202 , H01L21/28088 , H01L21/76822 , H01L29/4966 , H01L29/517 , H01L29/518
摘要： A method of fabricating a gate structure is provided. First, a sacrificial oxide layer is formed on a substrate. A nitridation treatment process is performed to redistribute the nitrogen atoms in the sacrificial layer and the substrate. Next, the sacrificial oxide layer is removed. A re-oxidation process is performed to produce an interface layer on the surface of the substrate. A high K (dielectric constant) gate dielectric layer, a barrier layer and a metal layer are sequentially formed on the substrate. The metal layer, the barrier layer, the high K gate dielectric layer and the interface layer are defined to form a stacked gate structure.
摘要翻译：提供一种制造栅极结构的方法。首先，在基板上形成牺牲氧化物层。进行氮化处理工艺以重新分配牺牲层和衬底中的氮原子。接下来，除去牺牲氧化物层。进行再氧化处理以在衬底的表面上产生界面层。在基板上依次形成高K（介电常数）栅介质层，阻挡层和金属层。限定金属层，势垒层，高K栅极介电层和界面层以形成层叠栅极结构。

85. 发明申请

US20080303102A1 Strained Isolation Regions 有权
标题翻译：应变隔离区域
公开(公告)号：US20080303102A1
公开(公告)日：2008-12-11
申请号：US11759791
申请日：2007-06-07
申请人： Mong-Song Liang , Tze-Liang Lee , Kuo-Tai Huang , Chao-Cheng Chen , Hao-Ming Lien , Chih-Tang Peng
发明人： Mong-Song Liang , Tze-Liang Lee , Kuo-Tai Huang , Chao-Cheng Chen , Hao-Ming Lien , Chih-Tang Peng
IPC分类号： H01L29/78
CPC分类号： H01L29/1054 , H01L21/76224 , H01L29/7833 , H01L29/7843 , H01L29/7846
摘要： An isolation trench having localized stressors is provided. In accordance with embodiments of the present invention, a trench is formed in a substrate and partially filled with a dielectric material. In an embodiment, the trench is filled with a dielectric layer and a planarization step is performed to planarize the surface with the surface of the substrate. The dielectric material is then recessed below the surface of the substrate. In the recessed portion of the trench, the dielectric material may remain along the sidewalls or the dielectric material may be removed along the sidewalls. A stress film, either tensile or compressive, may then be formed over the dielectric material within the recessed portion. The stress film may also extend over a transistor or other semiconductor structure.
摘要翻译：提供了具有局部应力源的隔离沟槽。根据本发明的实施例，在衬底中形成沟槽并且部分地填充有电介质材料。在一个实施例中，沟槽被填充有电介质层，并且执行平面化步骤以使其与衬底的表面平坦化。然后将电介质材料凹入到衬底的表面下方。在沟槽的凹陷部分中，电介质材料可以沿着侧壁保留，或者电介质材料可以沿侧壁去除。然后可以在凹陷部分内的电介质材料上形成拉伸或压缩的应力膜。应力膜也可以在晶体管或其它半导体结构上延伸。

86. 发明申请

US20080252028A1 SHOCK ABSORBING DEVICE FOR TOY STROLLER 审中-公开
标题翻译：用于玩具的减震装置
公开(公告)号：US20080252028A1
公开(公告)日：2008-10-16
申请号：US11735538
申请日：2007-04-16
申请人： Ming-Tai Huang
发明人： Ming-Tai Huang
IPC分类号： B62B9/18
CPC分类号： B62B9/18
摘要： A shock-absorbing device for a toy stroller includes a first member and a second member. An end of the first member is coupled with a lower end of one of a pair of cross-hinged beams of the toy stroller. The other end of the first member includes a base with an extension. An end of the second member is coupled with a wheel frame of the toy stroller. The other end of the second member has two spaced lateral walls and a top wall interconnected between the lateral walls, defining a compartment with a bottom opening for removably receiving the base and the extension. An inner face of a lateral wall of the other end of the second member includes a groove and a slot for respectively receiving a protrusion on the extension and an engaging block on the base.
摘要翻译：用于玩具童车的减震装置包括第一构件和第二构件。第一构件的端部与玩具婴儿车的一对横向铰链梁中的一个的下端连接。第一构件的另一端包括具有延伸部的底座。第二构件的端部与玩具车的车轮框架联接。第二构件的另一端具有两个间隔开的侧壁和互连在侧壁之间的顶壁，限定具有用于可拆卸地接收底座和延伸部的底部开口的隔室。第二构件的另一端的侧壁的内表面包括用于分别容纳延伸部上的突起的槽和槽，以及在基座上的接合块。

87. 发明申请

US20080013338A1 Opticle diffusing sheet and backlight module 审中-公开
标题翻译：光扩散片和背光模组
公开(公告)号：US20080013338A1
公开(公告)日：2008-01-17
申请号：US11582306
申请日：2006-10-18
申请人： Chung Tai Huang
发明人： Chung Tai Huang
IPC分类号： F21V7/04
CPC分类号： G02B6/0061 , G02B6/0043 , G02B6/0051 , G02B6/0053
摘要： An optical diffusing sheet includes a body and a plurality of light-shielding dots. The light-shielding dots are disposed on a surface of the body and are adjacent to an edge of the body. At least a portion of the adjacent light-shielding dots have different intervals. A backlight module including the optical diffusing sheet is also disclosed.
摘要翻译：光学漫射片包括主体和多个遮光点。遮光点设置在主体的表面上并且与身体的边缘相邻。相邻的遮光点的至少一部分具有不同的间隔。还公开了包括光漫射片的背光模块。

88. 发明申请

US20070248407A1 COLLAPSIBLE SHADE FRAME 审中-公开
标题翻译：可拆卸的镜框
公开(公告)号：US20070248407A1
公开(公告)日：2007-10-25
申请号：US11379320
申请日：2006-04-19
申请人： Ming-Tai Huang
发明人： Ming-Tai Huang
IPC分类号： E04B1/26
CPC分类号： E04H15/44 , Y10T403/7129
摘要： A shade frame includes a top frame and a leg assembly. The top frame includes a central coupler, a plurality of corner coupler, a plurality of supporting rods, and a plurality of connecting rods. The central coupler includes a cruciform body having four arms. Each lower coupler includes a body having a central recess and two side recesses. Each connecting rod includes two ends that are respectively and pivotally mounted in two side recesses respectively of two adjacent corner couplers. Each supporting rod includes a first end pivotally connected to an associated arm of the central coupler. Each supporting rod further includes a second end pivotally mounted in the central recess of an associated corner coupler. The leg assembly includes a plurality of legs each having an upper end releasably connected to an associated corner coupler.
摘要翻译：遮光框架包括顶部框架和腿部组件。顶部框架包括中央联接器，多个角联接器，多个支撑杆和多个连接杆。中心耦合器包括具有四个臂的十字形体。每个下连接器包括具有中心凹部和两个侧凹槽的本体。每个连杆包括分别枢转地安装在两个相邻角联接器的两个侧凹槽中的两个端部。每个支撑杆包括枢转地连接到中心联接器的相关臂的第一端。每个支撑杆还包括枢转地安装在相关联的角联接器的中心凹部中的第二端。腿组件包括多个腿，每个腿具有可释放地连接到相关联的角联接器的上端。

89. 发明授权

US07214631B2 Method of forming gate dielectric layer 有权
标题翻译：形成栅极电介质层的方法
公开(公告)号：US07214631B2
公开(公告)日：2007-05-08
申请号：US10906008
申请日：2005-01-31
申请人： Yu-Ren Wang , Ying-Wei Yen , Liyuan Cheng , Kuo-Tai Huang
发明人： Yu-Ren Wang , Ying-Wei Yen , Liyuan Cheng , Kuo-Tai Huang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： A method for forming a gate dielectric layer is described. A silicon oxide layer is formed on a semiconductor substrate. Then, a first and a second nitrogen doping processes are performed in sequence to the silicon oxide layer using plasma comprising inert gas and gaseous nitrogen to form a gate dielectric layer. The first nitrogen doping process is performed at a lower power, a lower pressure and a higher inert gas to nitrogen gas ratio than those at the second nitrogen doping process. The combination of the deeper nitrogen distribution of the first nitrogen doping process and the shallower nitrogen distribution of the second nitrogen doping process produces a flatter total nitrogen distribution profile so that leakage current from electron tunneling through the gate dielectric layer can be reduced.
摘要翻译：描述了形成栅介质层的方法。在半导体衬底上形成氧化硅层。然后，使用包含惰性气体和气态氮的等离子体，依次对氧化硅层进行第一和第二氮掺杂工艺以形成栅极电介质层。第一氮掺杂过程在低功率，低压和高惰性气体与氮气比之下进行，与第二氮掺杂过程相比。第一氮掺杂过程的较深氮分布和第二氮掺杂过程的较浅氮分布的组合产生更平坦的总氮分布分布，从而可以减少来自电介质穿过栅介质层的漏电流。

90. 发明申请

US20070082503A1 METHOD OF FABRICATING A DIELECTRIC LAYER 审中-公开
标题翻译：制作电介质层的方法
公开(公告)号：US20070082503A1
公开(公告)日：2007-04-12
申请号：US11163218
申请日：2005-10-11
申请人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
发明人： Yun-Ren Wang , Ying-Wei Yen , Chien-Hua Lung , Shu-Yen Chan , Kuo-Tai Huang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/3144
摘要： A method of fabricating a dielectric layer is described. A substrate is provided, and a dielectric layer is formed over the substrate. The dielectric layer is performed with a nitridation process. The dielectric layer is performed with a first annealing process. A first gas used in the first annealing process includes inert gas and oxygen. The first gas has a first partial pressure ratio of inert gas to oxygen. The dielectric layer is performed with the second annealing process. A second gas used in the second annealing includes inert gas and oxygen. The second gas has a second partial pressure ratio of inert gas to oxygen, and the second partial pressure ratio is smaller than the first partial pressure ratio. At least one annealing temperature of the two annealing processes is equal to or greater than 950° C. The invention improves uniformity of nitrogen dopants distributed in dielectric layer.
摘要翻译：描述制造介电层的方法。提供衬底，并且在衬底上形成电介质层。介电层通过氮化处理进行。介电层通过第一退火工艺进行。在第一退火工艺中使用的第一种气体包括惰性气体和氧气。第一气体具有惰性气体与氧的第一分压比。介电层通过第二退火工艺进行。在第二退火中使用的第二气体包括惰性气体和氧气。第二气体具有惰性气体与氧气的第二分压比，第二分压比小于第一分压比。两个退火工艺的至少一个退火温度等于或大于950℃。本发明改善了分布在介电层中的氮掺杂剂的均匀性。

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