专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07863116B2 IC card and booking-account system using the IC card 有权
标题翻译： IC卡和预订账号系统使用IC卡
公开(公告)号：US07863116B2
公开(公告)日：2011-01-04
申请号：US12652910
申请日：2010-01-06
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： G06K19/077 , G06K19/07703 , G06Q20/105 , G06Q20/3415 , G07F7/1008 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00011 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/10271 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/01005 , H01L2224/45147
摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
摘要翻译：本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部照片的伪造，以及显示其他图像以及脸部照片来确保安全性。一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路被配备用于相同的印刷线路板; IC卡的厚度为0.05mm〜1mm。

82. 发明授权

US07768405B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07768405B2
公开(公告)日：2010-08-03
申请号：US11007257
申请日：2004-12-09
申请人： Shunpei Yamazaki , Jun Koyama , Mai Akiba
发明人： Shunpei Yamazaki , Jun Koyama , Mai Akiba
IPC分类号： G08B13/14
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603 , Y10T29/49117
摘要： A semiconductor device typified by a wireless tag, which has improved mechanical strength, can be formed by a more simple process at a low cost and prevent radio waves from being shielded, and a manufacturing method of the semiconductor device. According to the invention, a wireless tag includes a thin film integrated circuit formed of an isolated TFT having a thin film semiconductor film. The wireless tag may be attached directly to an object, or attached to a flexible support such as plastic and paper before being attached to an object. The wireless tag of the invention may include an antenna as well as the thin film integrated circuit. The antenna allows to communicate signals between a reader/writer and the thin film integrated circuit, and to supply a power source voltage from the reader/writer to the thin film integrated circuit.
摘要翻译：可以通过更简单的方法以低成本的方法形成具有改善的机械强度的无线标签代表的半导体器件，并且防止无线电波被屏蔽，以及半导体器件的制造方法。根据本发明，无线标签包括由具有薄膜半导体膜的隔离TFT形成的薄膜集成电路。无线标签可以在被附接到对象之前直接附着到物体上，或者附着到诸如塑料和纸张之类的柔性支撑件上。本发明的无线标签可以包括天线以及薄膜集成电路。该天线允许在读/写器和薄膜集成电路之间通信信号，并将读取器/写入器的电源电压提供给薄膜集成电路。

83. 发明申请

US20100144070A1 IC CARD AND BOOKING-ACCOUNT SYSTEM USING THE IC CARD 有权
标题翻译：使用IC卡的IC卡和预订帐号系统
公开(公告)号：US20100144070A1
公开(公告)日：2010-06-10
申请号：US12652910
申请日：2010-01-06
申请人： Toru TAKAYAMA , Junya MARUYAMA , Yuugo GOTO , Yumiko OHNO , Mai AKIBA
发明人： Toru TAKAYAMA , Junya MARUYAMA , Yuugo GOTO , Yumiko OHNO , Mai AKIBA
IPC分类号： H01L33/00 , H01L21/60
CPC分类号： G06K19/077 , G06K19/07703 , G06Q20/105 , G06Q20/3415 , G07F7/1008 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00011 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/10271 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/01005 , H01L2224/45147
摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
摘要翻译：本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部图像的伪造，以及显示其他图像以及脸部照片来确保安全性。一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路被配备用于相同的印刷线路板; IC卡的厚度为0.05mm〜1mm。

84. 发明授权

US07652286B2 Semiconductor device and semiconductor device producing system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US07652286B2
公开(公告)日：2010-01-26
申请号：US11529392
申请日：2006-09-29
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/76
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/0608 , B23K26/067 , B23K26/0738 , B23K26/0853 , B23K26/10 , B23K26/702 , B23K2101/40 , H01L21/2026 , H01L27/1281 , H01L29/78603
摘要： An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.
摘要翻译：在基板上形成具有凹凸的绝缘膜。在绝缘膜上形成半导体膜。因此，对于通过使用激光的结晶，在半导体膜中选择性地形成应力集中的部分。更具体地，在半导体膜中设置条纹或矩形的凹凸。然后，连续波激光沿着形成在半导体膜中的条形凹部和突起或矩形的长轴或短轴的方向照射。

85. 发明授权

US07510920B2 Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize an amorphous semiconductor film 有权
标题翻译：使用脉冲振荡激光器的薄膜晶体管的制造方法使非晶半导体膜结晶化
公开(公告)号：US07510920B2
公开(公告)日：2009-03-31
申请号：US11285012
申请日：2005-11-23
申请人： Shunpei Yamazaki , Akihisa Shimomura , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba , Kenji Kasahara
发明人： Shunpei Yamazaki , Akihisa Shimomura , Hisashi Ohtani , Masaaki Hiroki , Koichiro Tanaka , Aiko Shiga , Mai Akiba , Kenji Kasahara
IPC分类号： H01L21/84
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/02691 , H01L21/2026 , H01L23/544 , H01L27/1285 , H01L29/04 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal having a large grain size can be continuously formed through super lateral growth that is artificially controlled and substrate processing efficiency during a laser crystallization process can be increased. In the manufacturing method for a semiconductor device, instead of performing laser irradiation on an entire semiconductor film within a substrate surface, a marker as a reference for positioning is formed so as to crystallize at least an indispensable portion at minimum. Thus, a time period required for laser crystallization can be reduced to make it possible to increase a processing speed for a substrate. The above structure is applied to a conventional SLS method, so that it is possible to solve a problem inherent to the conventional SLS method, in that the substrate processing efficiency is poor.
摘要翻译：实现了根据TFT的布置的晶粒的位置控制，并且同时提高了结晶过程中的处理速度。更具体地，提供了一种半导体器件的制造方法，其中可以通过人工控制的超横向生长连续地形成具有大晶粒尺寸的晶体，并且可以增加激光晶化过程中的衬底处理效率。在半导体器件的制造方法中，代替对基板表面内的整个半导体膜进行激光照射，形成用于定位的基准的标记，以至少使至少不可缺少的部分结晶。因此，可以减少激光结晶所需的时间，从而可以提高基板的处理速度。上述结构应用于传统的SLS方法，从而可以解决常规SLS方法固有的问题，因为衬底处理效率差。

86. 发明授权

US07420208B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07420208B2
公开(公告)日：2008-09-02
申请号：US11043283
申请日：2005-01-27
申请人： Shunpei Yamazaki , Toru Takayama , Mai Akiba
发明人： Shunpei Yamazaki , Toru Takayama , Mai Akiba
IPC分类号： H01L29/10
CPC分类号： H01L51/0097 , H01L27/3244 , H01L27/326 , H01L51/5237 , H01L51/5253 , H01L51/5256 , H01L51/529 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2251/5315 , H01L2251/5338
摘要： The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.
摘要翻译：本发明的目的是提供一种发光装置，其包括形成在塑料基板上的OLED，其能够防止由于水分或氧气的渗透而导致的劣化。在塑料基板上，用于防止氧或水分渗入OLED中的有机发光层的多个膜（以下称为阻挡膜）和具有比阻挡膜的应力小的膜（以下称为“ 被称为应力缓和膜），膜被插入在阻挡膜之间。由于多个阻挡膜的层压结构，即使在一个阻挡膜中发生裂纹，另一个阻挡膜可以有效地防止水分或氧气渗入有机发光层。此外，在阻挡膜之间插入有比阻挡膜小的应力的应力缓和膜，从而可以减小整个密封膜的应力。结果，几乎不发生由于应力引起的裂纹。

87. 发明申请

US20080149731A1 Id Label, Id Card, and Id Tag 有权
标题翻译： Id标签，Id卡和Id标签
公开(公告)号：US20080149731A1
公开(公告)日：2008-06-26
申请号：US10586156
申请日：2005-01-20
申请人： Yasuyuki Arai , Mai Akiba , Yuko Tachimura , Yohei Kanno
发明人： Yasuyuki Arai , Mai Akiba , Yuko Tachimura , Yohei Kanno
IPC分类号： G06K19/06
CPC分类号： H01L27/1266 , G06K19/07718 , G06K19/07749 , G06K19/0775 , G06K19/07779 , G06K19/07783 , H01L27/1203 , H01L27/1214 , H01L27/13 , H01L29/78603 , H01L2224/83192 , H01L2924/01004 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079
摘要： As a non-contact ID label, ID tag and the like being widespread, it is required to manufacture a considerable quantity of ID labels at quite a low cost. An ID label attached to a product is, for example, required to be manufactured at 1 to several yens each, or preferably less than one yen. Thus, such a structure and a process are demanded that an ID label can be manufactured in a large quantity at a low cost. A thin film integrated circuit device included in the ID label, the ID card, and the ID tag of the invention each includes a thin film active element such as a thin film transistor (TFT). Therefore, by peeling a substrate on which TFTs are formed for separating elements, the ID label and the like can be manufactured in a large quantity at a low cost.
摘要翻译：作为非接触式ID标签，ID标签等广泛使用，需要以相当低的成本制造大量的ID标签。例如，附着在产品上的ID标签需要以1至几个日元制造，或优选小于1日元。因此，要求能够以低成本大量制造ID标签的结构和工序。包括在本发明的ID标签，ID卡和ID标签中的薄膜集成电路器件各自包括诸如薄膜晶体管（TFT）的薄膜有源元件。因此，通过剥离其上形成有用于分离元件的TFT的基板，可以以低成本大量地制造ID标签等。

88. 发明申请

US20070246664A1 Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment 有权
标题翻译：激光装置，激光照射方法，半导体制造方法，半导体装置和电子设备
公开(公告)号：US20070246664A1
公开(公告)日：2007-10-25
申请号：US11812557
申请日：2007-06-20
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
IPC分类号： G01N21/00
CPC分类号： H01L21/02683 , B23K26/0823 , B23K2101/40 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L27/3244 , Y10S438/973
摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.
摘要翻译：提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动。

89. 发明授权

US07176490B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07176490B2
公开(公告)日：2007-02-13
申请号：US11087652
申请日：2005-03-24
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L29/104
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.
摘要翻译：提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加。在基板上形成绝缘膜，在绝缘膜上形成半导体膜。由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。具体地，在半导体膜上形成条状或矩形凹凸。连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。

90. 发明授权

US07170094B2 Light emitting device, driving method of light emitting device and electronic device 有权
标题翻译：发光装置，发光装置的驱动方法和电子装置
公开(公告)号：US07170094B2
公开(公告)日：2007-01-30
申请号：US10983749
申请日：2004-11-09
申请人： Shunpei Yamazaki , Mai Akiba , Jun Koyama
发明人： Shunpei Yamazaki , Mai Akiba , Jun Koyama
IPC分类号： G09G3/36 , H01L29/04
CPC分类号： H01L27/3248 , G09G3/2018 , G09G3/2022 , G09G3/22 , G09G3/3225 , G09G3/3233 , G09G3/3241 , G09G3/325 , G09G3/3258 , G09G3/3283 , G09G2300/04 , G09G2300/0426 , G09G2300/0814 , G09G2300/0842 , G09G2300/0861 , G09G2300/0866 , G09G2310/0256 , G09G2310/0262 , G09G2310/027 , G09G2310/0286 , G09G2310/0291 , G09G2310/08 , G09G2320/0233 , G09G2320/043 , G09G2320/045 , G09G2330/028 , G09G2330/04 , G09G2330/045 , H01L27/12 , H01L27/124 , H01L27/1255 , H01L27/1285 , H01L27/13 , H01L27/15 , H01L27/3244 , H01L27/3258 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L27/3279 , H01L29/4908 , H01L29/66757 , H01L33/20 , H01L33/32 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/0059 , H01L51/0073 , H01L51/0081 , H01L51/0085 , H01L51/0087 , H01L51/5259 , H01L2227/323 , H01L2251/308
摘要： By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.
摘要翻译：通过控制发光元件的亮度不是通过施加到TFT的电压来控制发光元件的亮度，而是通过控制在信号线驱动电路中流向TFT的电流，保持流向发光元件的电流达到期望值，而不依赖于TFT的特性。此外，每隔预定周期向发光元件施加反向偏压的电压。由于通过上述两种配置给出乘法器效应，因此可以防止由于有机发光层的劣化引起的亮度劣化，并且还可以将流到发光元件的电流保持为不依赖于TFT的特性的期望值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式