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81. 发明授权

US08614921B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08614921B2
公开(公告)日：2013-12-24
申请号：US12929798
申请日：2011-02-16
申请人： Yasuaki Watanabe
发明人： Yasuaki Watanabe
IPC分类号： G11C16/06
CPC分类号： G11C29/50 , G11C16/04 , G11C29/026 , G11C29/50004 , G11C2029/1204 , G11C2029/5006
摘要： A nonvolatile semiconductor memory device includes: a sense amplifier; bit lines coupled to the sense amplifier; memory cell transistors and dummy cell transistors coupled in parallel with the bit lines; and a current generating circuit that supplies a test current to current nodes. Either of the source and the drain of each of the dummy cell transistors is coupled to a bit line and the other is coupled to a current node. In a read operation test, the current generating circuit is activated and then the dummy cell transistors are turned on. The sense amplifier compares the test current passed through a bit line with a reference current and outputs output data corresponding to the result of the comparison.
摘要翻译：非易失性半导体存储器件包括：读出放大器; 耦合到读出放大器的位线; 与位线并联耦合的存储单元晶体管和虚设单元晶体管; 以及向当前节点提供测试电流的电流产生电路。每个虚设单元晶体管的源极和漏极之一耦合到位线，而另一个耦合到当前节点。在读取操作测试中，激活电流产生电路，然后虚拟单元晶体管导通。读出放大器将通过位线的测试电流与参考电流进行比较，并输出与比较结果相对应的输出数据。

82. 发明授权

US08612685B2 Processor, information processing device and cache control method of processor 失效
公开(公告)号：US08612685B2
公开(公告)日：2013-12-17
申请号：US12285717
申请日：2008-10-14
申请人： Shintaro Momose
发明人： Shintaro Momose
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F12/0888 , G06F9/30043 , G06F9/30189 , G06F2212/1044
摘要： A processor having a cache memory provided therein controls use of the cache memory based on operation mode information which changeably designates use/no-use of a cache memory and on designation of cache memory use in an access instruction word in a program at the time of an access to a main storage memory from the program in operation.

83. 发明授权

US08600962B2 Transaction processing device, transaction processing method, and transaction processing program 有权
标题翻译：事务处理设备，事务处理方法和事务处理程序
公开(公告)号：US08600962B2
公开(公告)日：2013-12-03
申请号：US13461622
申请日：2012-05-01
申请人： Junpei Kamimura , Atsushi Kitazawa , Tomoo Ebiyama
发明人： Junpei Kamimura , Atsushi Kitazawa , Tomoo Ebiyama
IPC分类号： G06F17/00
CPC分类号： G06F17/30368
摘要： A transaction processing device including: a representative key decision portion for deciding a representative key to be any one of the keys of every record of a record group as an object for maintaining consistency in a transaction process; a log compilation portion for updating a subordinate log by adding consistence object information indicating the object for maintaining the consistency to the subordinate log other than a representative log corresponding to the representative key among the logs corresponding to every record of the record group; a log update portion for updating the representative log by writing update information for every record of the record group into the representative log; and a record update portion for updating every record by reflecting the update information written into the representative log in the every record of the record group.
摘要翻译：一种交易处理装置，包括：代表性密钥判定部分，用于将代表密钥判定为记录组的每个记录的任何一个密钥作为用于维持交易过程中的一致性的对象; 日志编译部分，用于通过在对应于所述记录组的每个记录的日志中添加指示用于维持与所述下属日志的一致性的对象的一致性对象信息而不是与代表性密钥对应的代表性日志; 日志更新部分，用于通过将记录组的每个记录的更新信息写入代表日志来更新代表日志; 以及记录更新部分，用于通过将记录在代表性日志中的更新信息反映在记录组的每个记录中来更新每个记录。

84. 发明授权

US08588181B2 Facilitating method for handover of a mobile communication device 有权
标题翻译：移动通信设备切换的便利方法
公开(公告)号：US08588181B2
公开(公告)日：2013-11-19
申请号：US13404200
申请日：2012-02-24
申请人： Jagdeep Singh Ahluwalia
发明人： Jagdeep Singh Ahluwalia
IPC分类号： H04W4/00
CPC分类号： H04W36/0005 , H04L1/1664 , H04L1/1874 , H04L1/1887 , H04W36/0016 , H04W36/02
摘要： A communication method performed in a mobile communication device of a telecommunication system includes receiving Service Data Units, SDUs, for transmission to a source node of the telecommunication system, storing a copy of the SDUs in an SDU management buffer, passing the SDUs to a concatenation and segmentation unit to generate Protocol Data Units, PDUs, storing the PDUs in a transmit buffer for transmission to the source node, sending a feedback message to the SDU management buffer identifying an SDU that can be removed from the SDU management buffer, receiving a handover command from the source node after receiving the status report, and after completing handover to a target node, using the received status report to control which SDUs are passed to the concatenation and segmentation unit to form PDUs for transmission to the target node.
摘要翻译：在电信系统的移动通信设备中执行的通信方法包括：接收服务数据单元SDU，用于传输到电信系统的源节点，将SDU的副本存储在SDU管理缓冲器中，将SDU传递到级联以及分段单元，生成协议数据单元PDU，将PDU存储在用于发送到源节点的发送缓冲器中，向SDU管理缓冲区发送反馈消息，识别可以从SDU管理缓冲器移除的SDU，接收切换命令从源节点接收到状态报告之后，并且在完成切换到目标节点之后，使用接收的状态报告来控制哪些SDU被传递到级联和分段单元以形成用于传输到目标节点的PDU。

85. 发明授权

US08587027B2 Field effect transistor, method of manufacturing the same, and semiconductor device 有权
标题翻译：场效应晶体管，其制造方法以及半导体器件
公开(公告)号：US08587027B2
公开(公告)日：2013-11-19
申请号：US12457551
申请日：2009-06-15
申请人： Yasunori Bito
发明人： Yasunori Bito
IPC分类号： H01L21/318
CPC分类号： H01L29/7785 , H01L21/8252 , H01L27/0605
摘要： A J-FET includes a channel layer of a first conductivity type (a Si-doped n-type AlGaAs electron supply layers 3 and 7, undoped AlGaAs spacer layers 4 and 6, and an undoped InGaAs channel layer 5) formed above a semi-insulating GaAs substrate, an upper semiconductor layer made up of at least one semiconductor layer and formed above the channel layer of the first conductivity type, a semiconductor layer of a second conductivity type (C-doped p+-GaAs layer 18) formed in a recess made in the upper semiconductor layer or formed above the upper semiconductor layer, a gate electrode placed above and in contact with the semiconductor layer of the second conductivity type, and a gate insulating film including a nitride film formed above and in contact with the upper semiconductor layer and an oxide film formed above the nitride film and having a larger thickness than the nitride film.
摘要翻译： J-FET包括形成在半导体层上方的第一导电类型的沟道层（Si掺杂的n型AlGaAs电子供体层3和7，未掺杂的AlGaAs间隔层4和6以及未掺杂的InGaAs沟道层5）绝缘GaAs衬底，由至少一个半导体层构成并形成在第一导电类型的沟道层上方的上半导体层，形成在凹部中的第二导电类型（C掺杂p + -GaAs层18）的半导体层在上半导体层中形成或形成在上半导体层上方的栅电极，设置在第二导电类型的半导体层的上方并与之接触的栅电极，以及包括在上半导体层上形成并与上半导体接触的栅极绝缘膜层和形成在氮化物膜上方并且具有比氮化物膜更大的厚度的氧化物膜。

86. 发明授权

US08562392B2 Polishing apparatus and polishing method 失效
标题翻译：抛光设备和抛光方法
公开(公告)号：US08562392B2
公开(公告)日：2013-10-22
申请号：US12662340
申请日：2010-04-12
申请人： Masafumi Shiratani , Shigeyuki Yoshida , Osamu Ito
发明人： Masafumi Shiratani , Shigeyuki Yoshida , Osamu Ito
IPC分类号： B24B1/00
CPC分类号： B24B53/017
摘要： A polishing apparatus includes a polishing table with a polishing pad at an upper surface, and a conditioning disc carrying out conditioning of the polishing pad, and a moving mechanism (constructed, for example, from a swing arm) capable of moving the conditioning disc to a standby position above the polishing pad, and a spraying mechanism (constructed, for example, from a washing water nozzle) that sprays liquid to the conditioning disc positioned at the standby position so as to wash or wet the conditioning disc.
摘要翻译：抛光装置包括：在上表面具有抛光垫的抛光台和执行抛光垫调节的调节盘，以及能够将调节盘移动到的移动机构（例如由摆臂构成）抛光垫上方的待机位置，以及喷射机构（例如，从洗涤水喷嘴构成），其将液体喷射到位于待机位置的调理盘，以便洗涤或润湿调节盘。

87. 发明授权

US08547312B2 Display apparatus 有权
标题翻译：显示装置
公开(公告)号：US08547312B2
公开(公告)日：2013-10-01
申请号：US12737581
申请日：2008-07-28
申请人： Yasuki Sato , Kiyomichi Fukushima
发明人： Yasuki Sato , Kiyomichi Fukushima
IPC分类号： G09G3/36 , H05K7/20
CPC分类号： G02F1/133385 , G02F2201/36
摘要： A display apparatus includes a driving circuit portion driving a display panel portion, in which the driving circuit portion and a power unit which supplies electric power to the driving circuit portion are arranged on the back surface side, a case housing both the driving circuit portion and the power unit with the display panel portion, a partitioning wall portion which divides a housing space of the case, a gap which is formed between the display panel portion and the partitioning wall portion, and a cooling fan which leads outside air into the gap and which is arranged on the partitioning wall portion. The driving circuit portion and the power unit are arranged on an opposite side of the partitioning wall portion against the gap. The gap is shrunk along a direction from downside to upside of the display panel portion.
摘要翻译：显示装置包括驱动电路部分，驱动显示面板部分，其中驱动电路部分和向驱动电路部分供电的电源单元布置在背面侧;壳体，其将驱动电路部分和具有显示面板部分的动力单元，分隔壳体的容纳空间的分隔壁部分，形成在显示面板部分和分隔壁部分之间的间隙，以及将外部空气引导到间隙中的冷却风扇，其布置在分隔壁部分上。驱动电路部分和动力单元相对于间隙布置在分隔壁部分的相对侧上。间隙从显示面板部分的下侧到上侧的方向收缩。

88. 发明授权

US08546039B2 Solid polymer fuel cell 失效
标题翻译：固体聚合物燃料电池
公开(公告)号：US08546039B2
公开(公告)日：2013-10-01
申请号：US12312547
申请日：2007-10-30
申请人： Kenji Kobayashi , Shoji Sekino
发明人： Kenji Kobayashi , Shoji Sekino
IPC分类号： H01M2/00
CPC分类号： H01M8/1011 , H01M4/8657 , H01M8/0239 , H01M8/0245 , H01M8/0271 , H01M8/0273 , H01M8/0276 , H01M8/04164 , H01M8/04186 , H01M8/04201 , H01M8/04291 , H01M8/246 , Y02E60/523
摘要： A solid polymer fuel cell that utilizes liquid fuel such as methanol should prevent generated water from residing in a ventilation port close to an anode, to thereby suppress degradation of a MEA. The fuel cell includes an anode, an anode-side collecting electrode, a sealing material located along a perimeter of a solid polymer electrolytic membrane and interleaved between the electrolytic membrane and the anode-side collecting electrode, and a discharging device that discharges a product generated through electric reaction on the anode. The sealing material is provided in a frame-shape around the anode. The discharging device is a ventilation port formed on the sealing material, and a water repellent material is provided at least one of inside the ventilation port and between the ventilation port and the anode.
摘要翻译：使用甲醇等液体燃料的固体高分子型燃料电池，能够防止生成的水滞留在靠近阳极的通气口内，抑制MEA的劣化。燃料电池包括阳极，阳极侧收集电极，沿着固体聚合物电解质膜的周边定位并且在电解质膜和阳极侧集电电极之间交错的密封材料，以及排出产生的产品的放电装置通过阳极上的电反应。密封材料围绕阳极设置成框状。排出装置是形成在密封材料上的通气口，并且在通气口的内部和通气口与阳极之间的至少一方设置防水材料。

89. 发明授权

US08541681B2 Cable fixing member 有权
标题翻译：电缆固定件
公开(公告)号：US08541681B2
公开(公告)日：2013-09-24
申请号：US13067583
申请日：2011-06-10
申请人： Hirotaka Eshima , Yoji Kobayashi , Satoshi Murata , Kei Takakuwa
发明人： Hirotaka Eshima , Yoji Kobayashi , Satoshi Murata , Kei Takakuwa
IPC分类号： H02G3/00
CPC分类号： H02G3/32 , B60R16/0215
摘要： A cable fixing member formed of one belt-like metal plate bent to fix three cables to a structure includes two flanges formed at both ends of the metal plate, two C-shaped holding portions formed to be bent into C-shapes in cross section on both sides respectively of a reference portion of the metal plate to hold two of the three cables in the C-shaped holding portions respectively, and two semicircular arc portions formed to be bent into semicircular arc shapes in cross section between the C-shaped holding portions and the flanges on both the sides respectively of the reference portion of the metal plate so that the two semicircular arc portions face each other to hold one of the three cables therebetween. The three cables are held so that the three cables are arranged to form a triangular shape in transverse cross sectional view.
摘要翻译：将三根电缆固定在一个结构上的一个带状金属板形成的电缆固定件包括形成在金属板两端的两个凸缘，两个C形保持部分形成为横截面为C形分别将金属板的参考部分的两侧分别夹持在C形保持部分中的三条电缆中的两条电缆，以及形成为在C形保持部分之间弯曲成半圆弧形状的两个半圆弧部分以及分别在金属板的参考部分的两侧的凸缘，使得两个半圆弧部分彼此面对以将三根电缆中的一根保持在其间。保持三条电缆，以使三根电缆以横截面图形式形成三角形。

90. 发明授权

US08518806B2 Method for producing group III nitride-based compound semiconductor, wafer including group III nitride-based compound semiconductor, and group III nitrided-based compound semiconductor device 有权
标题翻译： III族氮化物系化合物半导体的制造方法，含有III族氮化物系化合物半导体的晶片和III族氮化物系化合物半导体装置
公开(公告)号：US08518806B2
公开(公告)日：2013-08-27
申请号：US12734685
申请日：2009-01-27
申请人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
发明人： Koji Okuno , Shugo Nitta , Yoshiki Saito , Yasuhisa Ushida , Naoyuki Nakada , Shinya Boyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/403 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
摘要翻译：制造具有m面主面和均匀取向的晶轴的III族氮化物系化合物半导体。在蓝宝石基板的a面主表面上形成具有从c面偏离45°以下的侧面的台面。随后，在300℃〜420℃下供给三甲基铝，形成厚度为40以下的铝层。将铝层氮化以形成氮化铝层。通过该方法，在具有a面主表面的蓝宝石衬底中，从c面开始只从具有45°以下偏离角的台面的侧面外延生长III族氮化物系化合物半导体。因此，可以形成具有与蓝宝石基板的主表面平行的m面的III族氮化物系化合物半导体。

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