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    • 76. 发明授权
    • Alteration of graphene defects
    • 改变石墨烯缺陷
    • US09011968B2
    • 2015-04-21
    • US13391158
    • 2011-09-16
    • Seth MillerThomas Yager
    • Seth MillerThomas Yager
    • B05D5/12C01B31/04B05C3/20B05C3/00B32B3/10B32B9/04
    • C01B32/194B05C3/02B05C3/20B05D5/12B32B3/10B32B9/04C01B32/182C01B32/184Y10T428/24331
    • Technologies are generally described for method and systems effective to at least partially alter a defect in a layer including graphene. In some examples, the methods may include receiving the layer on a substrate where the layer includes at least some graphene and at least some defect areas in the graphene. The defect areas may reveal exposed areas of the substrate. The methods may also include reacting the substrate under sufficient reaction conditions to produce at least one cationic area in at least one of the exposed areas. The methods may further include adhering graphene oxide to the at least one cationic area to produce a graphene oxide layer. The methods may further include reducing the graphene oxide layer to produce at least one altered defect area in the layer.
    • 通常描述了有效地至少部分地改变包括石墨烯的层中的缺陷的方法和系统的技术。 在一些示例中,所述方法可以包括在衬底上接收该层,其中层包括至少一些石墨烯和石墨烯中的至少一些缺陷区域。 缺陷区域可能暴露基底的暴露区域。 所述方法还可包括在足够的反应条件下使底物反应以在至少一个暴露区域中产生至少一个阳离子区域。 所述方法还可以包括将氧化石墨烯粘附到至少一个阳离子区域以产生氧化石墨烯氧化物层。 所述方法还可以包括减少石墨烯氧化物层以在该层中产生至少一个改变的缺陷区域。