会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 75. 发明申请
    • Ultraviolet Light Oven For Glass Substrate
    • 玻璃基板紫外线烤箱
    • US20150235724A1
    • 2015-08-20
    • US14235362
    • 2013-12-24
    • Xiaocheng Liu
    • Xiaocheng Liu
    • G21K1/06G02F1/1337G21K5/02
    • G21K1/067G02F1/1303G02F1/133711G02F1/133788G02F2001/133715G21K5/02
    • The present invention provides an ultraviolet light oven for aligning liquid crystal molecules, comprising a plurality of ultraviolet light sources, each of the reflectors including a reflecting surface facing to the ultraviolet light source, wherein the reflector includes a first optical portion in the form of recess defined on the refracting surface. The present invention further provides an ultraviolet light oven for aligning liquid crystal molecules, and by providing a first optical portion on a reflecting surface of the reflector, and a second optical portion on the side surface of the reflector to as to properly reflect the light beam with is not directly projected toward the substrate and therefore increase the utilization of the ultraviolet light, the exposure and homogeneousness of the ultraviolet light. As a result, the exposing period is shortened, the working efficiency is increased.
    • 本发明提供了一种用于对准液晶分子的紫外光烘箱,其包括多个紫外光源,每个反射器包括面向紫外光源的反射表面,其中反射器包括凹陷形式的第一光学部分 定义在折射表面上。 本发明还提供了一种用于对准液晶分子的紫外光烘箱,并且通过在反射器的反射表面上设置第一光学部分和在反射器的侧表面上的第二光学部分,以便适当地反射光束 不会直接投射到基板上,因此增加紫外光的利用率,紫外线的曝光和均匀性。 结果,曝光期间缩短,工作效率提高。
    • 80. 发明授权
    • Plasma uniformity control using biased array
    • 使用偏置阵列的等离子体均匀性控制
    • US08834732B2
    • 2014-09-16
    • US13662018
    • 2012-10-26
    • Varian Semiconductor Equipment Associates, Inc.
    • Bon-Woong Koo
    • C03C15/00H01J37/32C23C14/48G21K5/02
    • C23C14/48G21K5/02H01J37/32412H01J37/32623H01J37/32706
    • A technique for processing a workpiece is disclosed. In accordance with one exemplary embodiment, the technique is realized as a method for processing a substrate, where the method comprises: providing the workpiece in the chamber; providing a plurality of electrodes between a wall of the chamber and the workpiece; generating a plasma containing ions between the plurality of electrodes and the workpiece, ion density in an inner portion of the plasma being greater than the ion density in an outer portion of the plasma portion, the outer portion being between the inner portion and the wall of the chamber; and providing a bias voltage to the plurality of electrodes and dispersing at least a portion of the ions in the inner portion until the ion density in the inner portion is substantially equal to the ion density in the periphery plasma portion.
    • 公开了一种用于加工工件的技术。 根据一个示例性实施例,该技术被实现为用于处理衬底的方法,其中该方法包括:在腔室中提供工件; 在所述室的壁和所述工件之间提供多个电极; 在所述多个电极和所述工件之间产生含有离子的等离子体,所述等离子体的内部部分中的离子密度大于所述等离子体部分的外部部分中的离子密度,所述外部部分位于所述等离子体部分的内部和壁之间 房间 以及向所述多个电极提供偏置电压并将所述离子的至少一部分分散在所述内部部分中,直到所述内部部分中的离子密度基本上等于所述周边等离子体部分中的离子密度。