专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US5736206A Molded body of quartz glass and process for the production of a molded body of quartz glass 失效
标题翻译：石英玻璃成型体及生产石英玻璃成型体的工艺
公开(公告)号：US5736206A
公开(公告)日：1998-04-07
申请号：US640759
申请日：1996-05-07
申请人： Wolfgang Englisch , Stephan Moritz , Dietmar Hellmann
发明人： Wolfgang Englisch , Stephan Moritz , Dietmar Hellmann
IPC分类号： C03B20/00 , B22C9/12 , B28B1/26 , C03B19/06 , C03C3/06 , C03C11/00 , C03C17/02 , C04B33/28 , C04B35/14 , C30B35/00 , G01J1/42 , B01J3/00 , H01L21/02
CPC分类号： C03C17/02 , B22C9/12 , C03B19/06 , C03B19/066 , C03B20/00 , C03C11/00 , C03C3/06 , C30B35/002 , G01J1/429 , C03B2201/23 , C03C2201/02 , C03C2201/80 , C03C2203/52 , Y10T428/131 , Y10T428/1317
摘要： Molded bodies of quartz glass have at least one surface area of transparent quartz glass, the exposed surfaces of which are smooth and which have a surface microroughness of less than 8 .mu.m. The base material has a chemical purity of at least 99.9% and a cristobalite content of no more than 1%; is gas-impermeable and opaque; and contains pores. At a wall thickness of 1 mm, the base material has a nearly uniform direct spectral transmission of less than 10% in the wavelength range of .lambda.=190-2,650 nm; and which has a density of at least 2.215 g/cm.sup.3. The transparent surface area is formed from base material by heating it to a temperature above 1,650.degree. C. The thickness of the transparent layer is at least 0.5 mm, and its direct spectral transmission in the wavelength range of .lambda.=6001-2,650 nm is at least 60% for a layer thickness of 1 mm.
摘要翻译： PCT No.PCT / EP94 / 03722 Sec。 371日期：1996年5月7日 102（e）日期1996年5月7日PCT 1994年11月10日PCT PCT。公开号WO95 / 13248 日期1995年5月18日石英玻璃体的模体具有透明石英玻璃的至少一个表面积，其露出表面光滑，表面微粗糙度小于8μm。基材的化学纯度为99.9％以上，方石方含量不超过1％。是不透气和不透明的; 并含有毛孔。在壁厚为1mm的情况下，基材在λ= 190-2,650nm的波长范围内具有小于10％的几乎均匀的直接光谱透射; 并且其密度为至少2.215g / cm 3。透明表面积由基材通过加热至1650℃以上而形成。透明层的厚度至少为0.5mm，其在λ= 6001-2,650nm的波长范围内的直接光谱透过率为对于层厚为1mm，最少为60％。

72. 发明授权

US5730800A Fused silica glass crucible 失效
标题翻译：熔融石英玻璃坩埚
公开(公告)号：US5730800A
公开(公告)日：1998-03-24
申请号：US768282
申请日：1996-12-17
申请人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
发明人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
IPC分类号： C03C3/06 , C30B15/00 , C30B15/10 , C30B35/00
CPC分类号： C30B29/06 , C03C3/06 , C30B15/10 , C30B35/002 , C03C2201/30 , C03C2201/32
摘要： An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.
摘要翻译：提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存之后也不会出现延迟OSF作为单晶的缺陷的问题，基于发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

73. 发明授权

US5674317A Vessel made from pyrolytic boron nitride 失效
标题翻译：由热解氮化硼制成的容器
公开(公告)号：US5674317A
公开(公告)日：1997-10-07
申请号：US584806
申请日：1996-01-11
申请人： Noboru Kimura , Kenji Itou
发明人： Noboru Kimura , Kenji Itou
IPC分类号： C04B35/583 , C30B15/10 , C30B35/00 , C30B29/38
CPC分类号： C04B35/583 , C30B15/10 , C30B35/002 , Y10S117/90 , Y10T117/1032
摘要： Proposed is a novel vessel such as crucibles made from PBN (pyrolytic boron nitride), which is highly resistant against exfoliation of the surface layer and suitable for use, for example, as a container of the melt in the Czochralski single crystal growing of III-V Group compound semiconductor single crystals with an improvement in the serviceable life. The PBN-made vessel of the invention is characterized by specific values of several parameters including density, which should be in the range from 1.90 to 2.05 g/cm.sup.3, intensity ratio of the X-ray diffraction peaks representing the degree of orientation, heat conductivity coefficient and the like. The above mentioned advantageous serviceable life of the vessel can be obtained only when these parameter values are satisfied.
摘要翻译：提出了一种新型容器，例如由PBN（热解氮化硼）制成的坩埚，其耐表面层的剥离具有高度抗性，并且适用于例如在Czochralski单晶生长中的熔体的容器， V组化合物半导体单晶，使用寿命有所提高。本发明的PBN制造的容器的特征在于几个参数的具体值，包括密度，其值应在1.90至2.05g / cm 3的范围内，表示取向度，导热性的X射线衍射峰的强度比系数等。只有满足这些参数值，才能获得上述有利的使用寿命。

74. 发明授权

US5609682A Method for the preparation of silicon single crystal 失效
标题翻译：硅单晶的制备方法
公开(公告)号：US5609682A
公开(公告)日：1997-03-11
申请号：US498894
申请日：1995-07-06
申请人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
发明人： Wataru Sato , Masahiro Sakurada , Ohta Tomohiko , Katsuhiko Kemmochi
IPC分类号： C03C3/06 , C30B15/00 , C30B15/10 , C30B35/00
CPC分类号： C30B29/06 , C03C3/06 , C30B15/10 , C30B35/002 , C03C2201/30 , C03C2201/32
摘要： An improved method is proposed for the preparation of a semiconductor silicon single crystal of N-type by the Czochralski process, which is free from the problem of occurrence of delayed OSFs as defects in the single crystal even after prolonged storage at room temperature based on the discovery that presence of a certain amount of aluminum in the melt of silicon contained in a fused silica glass crucible acts to suppress occurrence of delayed OSFs as a type of defects in the single crystal while copper as an impurity acts adversely in this regard. With a known fact that an about 30 .mu.m thick inner surface layer of the crucible is melted down into the silicon melt during the single crystal pulling-up process, namely, the invention proposes use of a crucible of which the inner surface layer of 30 .mu.m thickness contains aluminum in an average concentration of 40 to 500 ppm by weight while the content of copper is as low as possible not to exceed 0.5 ppb by weight. Alternatively, when the fused silica glass crucible is deficient in the content of aluminum, an amount of aluminum is introduced as a dopant into the melt of silicon in the crucible to supplement the content of aluminum in order to be sufficient to suppress delayed OSFs.
摘要翻译：提出了一种通过Czochralski工艺制备N型半导体硅单晶的改进方法，其即使在室温下长时间储存之后也不会出现延迟OSF作为单晶的缺陷的问题，基于发现在熔融石英玻璃坩埚中含有的硅熔体中存在一定量的铝作为抑制作为单晶中的缺陷的延迟OSF的发生，而作为杂质的铜在这方面起不利影响。在已知的事实中，在单晶提拉过程中坩埚的内表面层约30μm的内表面层熔化成硅熔体，即本发明提出使用内表面层为30的坩埚平均浓度为40〜500ppm的铝，而铜的含量尽可能低，不超过0.5ppb（重量）。或者，当熔融石英玻璃坩埚的铝含量不足时，将铝的量作为掺杂剂引入到坩埚中的硅熔体中，以补充铝的含量，以足以抑制延迟的OSF。

75. 发明授权

US5132145A Method of making composite material crucible for use in a device for making single crystals 失效
标题翻译：制造复合材料的方法可用于制造单晶的器件
公开(公告)号：US5132145A
公开(公告)日：1992-07-21
申请号：US474460
申请日：1990-02-02
申请人： Dominique Valentian
发明人： Dominique Valentian
IPC分类号： C30B11/00 , C30B35/00
CPC分类号： C30B11/002 , C30B35/002 , Y10T428/30
摘要： A composite material crucible for a device for making single crystals having a single layer integrally-formed cylindrical wall made of composite materials in order to simultaneously provide mechanical strength and matching of its thermal conductivity to the thermal conductivity of a molten sample. The wall has an inner lining intimately and integrally bonded thereto for providing the functions of sealing and physical and chemical compatibility with the sample, without contamination thereof. A method for manufacturing the cylindrical crucible comprising selecting a composite material wall composition including fibers made of carbon or silicon carbide, and a matrix made of carbon or silicon carbide, making from the composite material a single layer integrally-formed cylindrical wall, and depositing on the cylindrical wall an optimized material to form an inner coating which is intimately and integrally bonded to the cylindrical wall.
摘要翻译：一种用于制造单晶的装置的复合材料坩埚，其具有由复合材料制成的单层整体形成的圆柱形壁，以便同时提供其热导率与熔融样品的热导率的机械强度和匹配。该壁具有紧密且一体地结合在其上的内衬，以提供与样品的密封和物理和化学相容性的功能，而不会污染它们。一种制造圆柱形坩埚的方法，包括选择由碳或碳化硅制成的纤维的复合材料壁组合物和由碳或碳化硅制成的基体，由复合材料制成单层整体形成的圆柱形壁，并沉积在圆柱形壁是优化的材料，以形成密封并整体地结合到圆柱形壁上的内涂层。

76. 发明授权

US5064497A Crystal growth method and apparatus 失效
标题翻译：水晶生长方法和装置
公开(公告)号：US5064497A
公开(公告)日：1991-11-12
申请号：US490903
申请日：1990-03-09
申请人： Jim E. Clemans , Theophilus I. Ejim , Maria J. Yuen
发明人： Jim E. Clemans , Theophilus I. Ejim , Maria J. Yuen
IPC分类号： C30B11/00 , C30B29/40 , C30B35/00 , H01L21/208
CPC分类号： C30B11/002 , C30B35/002 , Y10S117/90 , Y10S117/902 , Y10T117/1092
摘要： In a compound semiconductor crystal growth process, the crucible (11) that contains the semiconductor melt is contacted on its opposite surface by a material (26) which, when melted, reacts with the crucible. The reacting material is melted along with the compound semiconductor material and thereafter reacts with the wall (24) of the crucible that contains the semiconductor melt. During the entire growth process, the wall is sufficiently thick to separate the reacting material from the compound semiconductor material, but is sufficiently thin that the reacting material significantly weakens its structural integrity. As a consequence, thermal stresses resulting from differential contraction of the compound semiconductor material and the wall during the cooling step are relieved by fracture of the crucible wall.

77. 发明授权

US5053359A Cristobalite reinforcement of high silica glass 失效
标题翻译：方石英加强高硅石玻璃
公开(公告)号：US5053359A
公开(公告)日：1991-10-01
申请号：US523982
申请日：1990-05-16
申请人： Ted A. Loxley , Harold L. Wheaton
发明人： Ted A. Loxley , Harold L. Wheaton
IPC分类号： C03B32/02 , C03C10/00 , C03C10/14 , C30B15/10 , C30B35/00
CPC分类号： C30B15/10 , C03B32/02 , C03C10/0009 , C30B35/002
摘要： A high-density silica glass article with excellent thermal shock characteristics is formed from a high purity vitreous silica containing an aluminum compound as a crystallization aid and having a dense concentration of cristobalite muclei. The aluminum compound is aluminum oxide, aluminum hydroxide, an aluminum salt, or other aluminum-oxide precursor.A refractory silica glass crucible made according to the invention has remarkable advantages in a Czochralski crystal-growing process. The entire crucible can be crystallized during the initial melt down in the Cz furnace to provide a cristobalite inner surface which effectively resists attack by the molten silicon to minimize contamination problems during crystal growing.Another embodiment of the invention relates to a unique drawn silica glass with good flexural strength having fibrous oriented veins of cristobalite embedded in a matrix of vitreous silica and having remarkable resistance to deformation at temperatures of 1500.degree. C. and higher as are encountered in certain ferrous casting and investment casting processes.
摘要翻译：具有优异的热冲击特性的高密度二氧化硅玻璃制品由含有铝化合物作为结晶助剂并具有密集浓度的方英石核的高纯度二氧化硅二氧化硅形成。铝化合物是氧化铝，氢氧化铝，铝盐或其它氧化铝前体。根据本发明制造的耐火二氧化硅玻璃坩埚在切克拉斯基晶体生长过程中具有显着的优点。整个坩埚可以在Cz炉初始熔化过程中结晶，以提供方英石内表面，有效抵抗熔融硅的侵蚀，从而最大限度地减少晶体生长过程中的污染问题。本发明的另一个实施方案涉及具有良好弯曲强度的独特的拉制二氧化硅玻璃，其具有嵌入玻璃状二氧化硅基质中的方英石的纤维定向静脉，并且在1500℃和更高的温度下具有显着的抗变形，如在某些亚铁中遇到的铸造和熔模铸造工艺。

78. 发明授权

US5009861A Crystallization apparatus 失效
标题翻译：结晶装置
公开(公告)号：US5009861A
公开(公告)日：1991-04-23
申请号：US229950
申请日：1988-08-09
申请人： Andreas Plaas-Link
发明人： Andreas Plaas-Link
IPC分类号： C07K1/00 , B01D9/00 , B01D9/02 , B01L3/06 , C30B7/00 , C30B29/58
CPC分类号： C30B7/14 , B01D9/00 , B01L3/06 , C30B29/58 , C30B35/002 , C30B7/00 , Y10S117/901 , Y10T117/1092
摘要： A crystallization apparatus 2, in particular for crystallizing proteins at zero gravity, comprises a crystallization cell consisting of an elastic tube 8 of which the ends can be sealed. Using a clamp means 10the tube cavity can be reversibly divided into several cells 14, 14', 14" to receive various solutions depending on the particular crystallization.
摘要翻译：结晶装置2，特别是用于在零重力下结晶蛋白质的结晶装置2包括由弹性管8组成的结晶细胞，弹性管8的端部可被密封。使用夹紧装置10 + L，管腔可以可逆地分成几个单元14,14'，14“，以接收取决于特定结晶的各种溶液。

79. 发明授权

US4911896A Fused quartz member for use in semiconductor manufacture 失效
标题翻译：用于半导体制造的熔融石英片
公开(公告)号：US4911896A
公开(公告)日：1990-03-27
申请号：US889142
申请日：1986-07-24
申请人： Peter P. Bihuniak , Gordon E. Dogunke , Robert D. Shelley
发明人： Peter P. Bihuniak , Gordon E. Dogunke , Robert D. Shelley
IPC分类号： C03B19/09 , C03B20/00 , C03C3/06 , C03C11/00 , C30B15/10 , C30B15/20 , C30B29/06 , C30B35/00
CPC分类号： C03C3/06 , C03B19/095 , C03C11/00 , C30B15/10 , C30B35/002 , Y10S117/90 , Y10T117/1068
摘要： A composite fused quartz material is disclosed for processing semiconductor grade silicon material in an improved manner. The modified vitreous material includes a disperse phase of fine size silicon metal particles which are distributed in preselected regions of the fused quartz matrix as a means of exercising temperature control in the various semiconductor processing operations using these fused quartz parts. Such utilization of the modified vitreous material in single crystal silicon rod growth and production of semiconductor grade silicon by diffusion doping is described. A method to produce the modified vitreous material is also disclosed.
摘要翻译：公开了一种用于以改进的方式处理半导体级硅材料的复合熔融石英材料。改性玻璃质材料包括分散在熔融石英基体的预选区域中的细小尺寸硅金属颗粒的分散相，作为在使用这些熔融石英部件的各种半导体加工操作中进行温度控制的手段。描述了通过扩散掺杂将改性玻璃质材料在单晶硅棒生长和半导体级硅生产中的利用。还公开了生产改性玻璃质材料的方法。

80. 发明授权

US4849608A Apparatus for heat-treating wafers 失效
标题翻译：用于热处理晶片的设备
公开(公告)号：US4849608A
公开(公告)日：1989-07-18
申请号：US159404
申请日：1988-02-11
申请人： Yusuke Muraoka , Atsushi Tamada , Takamasa Sakai , Hitoshi Haibara , Keiji Nakagawa
发明人： Yusuke Muraoka , Atsushi Tamada , Takamasa Sakai , Hitoshi Haibara , Keiji Nakagawa
IPC分类号： C30B25/10 , C30B31/12 , C30B35/00 , F27D1/00 , F27D11/02 , H01L21/00
CPC分类号： H01L21/67115 , C30B25/10 , C30B31/12 , C30B35/002 , F27D1/0033 , F27D1/0036 , F27D11/02
摘要： An apparatus for heat-treating wafers including: a cylindrical body having an infrared reflection film formed on an interior peripheral surface thereof; a furnace core tube disposed within the cylindrical body for accommodating therein the wafers; a heater element provided within the cylindrical body for heating the furnace core tube, the heater being positioned outwardly remotely from an exterior peripheral surface of the furnace core tube in a manner to surround the tube; and a plurality of insulating heat-resistant bar members provided within the cylindrical body and extending in a direction parallel to the central axis of the furnace core tube for supporting the heater element.
摘要翻译：一种用于热处理晶片的设备，包括：具有形成在其内周表面上的红外反射膜的圆柱体; 设置在所述圆筒体内的用于容纳晶片的炉芯管; 设置在所述圆筒体内用于加热所述炉芯管的加热器元件，所述加热器以围绕所述管的方式从所述炉芯管的外周表面向外远离; 以及多个绝缘耐热杆件，其设置在所述筒体内并且沿与所述炉芯管的中心轴平行的方向延伸，用于支撑所述加热器元件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式