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71. 发明申请

US20160122902A1 METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL 有权
标题翻译：制造单晶碳化硅的方法
公开(公告)号：US20160122902A1
公开(公告)日：2016-05-05
申请号：US14804438
申请日：2015-07-21
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Shin HARADA , Tsutomu HORI
IPC分类号： C30B23/06 , C30B29/36
CPC分类号： C30B23/066 , C30B29/36
摘要： A crucible having a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface, a resistive heater provided outside of the crucible and made of carbon, a source material provided in the crucible, and a seed crystal provided to face the source material in the crucible are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the source material with the resistive heater. In the step of growing a silicon carbide single crystal, a value obtained by dividing a value of a current flowing through the resistive heater by a cross-sectional area of the resistive heater perpendicular to a direction in which the current flows is maintained at 5 A/mm2 or less.
摘要翻译：一种具有顶表面，与顶表面相对的底表面和位于顶表面和底表面之间的管状侧表面的坩埚，设置在坩埚外部并由碳制成的电阻加热器，设置在该坩埚中的源材料坩埚，和准备面对坩埚中的原料的晶种。通过用电阻加热器升华源材料，在晶种上生长碳化硅单晶。在生长碳化硅单晶的步骤中，通过将流经电阻加热器的电流值除以与电流流动方向垂直的电阻加热器的横截面面积获得的值保持在5A / mm2以下。

72. 发明申请

US20150218729A1 ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM 有权
标题翻译：具有高透明度的超滤玻璃的氮化钠块状晶体及其形成方法
公开(公告)号：US20150218729A1
公开(公告)日：2015-08-06
申请号：US14687993
申请日：2015-04-16
申请人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
发明人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
IPC分类号： C30B23/02 , C30B29/40 , C30B23/00
CPC分类号： C30B23/066 , C30B23/00 , C30B23/002 , C30B23/02 , C30B29/403 , C30B33/02 , C30B35/00 , H01L21/02389 , Y10T428/2982
摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
摘要翻译：在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。

73. 发明申请

US20150214412A1 LATTICE MATCHABLE ALLOY FOR SOLAR CELLS 有权
标题翻译：太阳能电池适用合金
公开(公告)号：US20150214412A1
公开(公告)日：2015-07-30
申请号：US14678737
申请日：2015-04-03
申请人： SOLAR JUNCTION CORPORATION
发明人： Rebecca Elizabeth Jones-Albertus , HOMAN BERNARD YUEN , TING LIU , PRANOB MISRA
IPC分类号： H01L31/0735 , C22C28/00 , C22C30/00 , H01L31/0304 , H01L31/0725
CPC分类号： H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
摘要翻译：提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物（N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07＆nlE; x＆nlE; 0.18,0.025＆amp; nlE; y＆nlE; 0.04和0.001＆amp; nlE; z＆nlE; 0.03。

74. 发明授权

US09067790B2 Vapour deposition process for the preparation of a chemical compound 有权
标题翻译：用于制备化合物的气相沉积工艺
公开(公告)号：US09067790B2
公开(公告)日：2015-06-30
申请号：US14117827
申请日：2012-07-20
申请人： Brian Elliott Hayden , Christopher Edward Lee , Duncan Clifford Alan Smith , Mark Stephen Beal , Xiaojuan Lu , Chihiro Yada
发明人： Brian Elliott Hayden , Christopher Edward Lee , Duncan Clifford Alan Smith , Mark Stephen Beal , Xiaojuan Lu , Chihiro Yada
IPC分类号： C23C14/34 , C23C16/513 , C01B25/30 , C23C14/24 , C30B23/06 , C30B23/08 , H01M4/58 , H01M4/04 , H01M4/136 , H01M4/1397 , C23C14/08 , C01B21/20 , C01B25/45 , H01M10/0525
CPC分类号： C01B25/30 , C01B21/203 , C01B25/45 , C23C14/08 , C23C14/24 , C30B23/066 , C30B23/08 , H01M4/0421 , H01M4/0428 , H01M4/136 , H01M4/1397 , H01M4/5825 , H01M10/0525 , Y02E60/122 , Y02P70/54
摘要： A vapor deposition process for the preparation of a chemical compound, wherein the process comprises providing each component element of the chemical compound as a vapor, and co-depositing the component element vapors on a common substrate, wherein: the vapor of at least one component element is provided using a cracking source; the vapor of at least one other component element is provided using a plasma source; and at least one further component element vapor is provided; wherein the component elements react on the substrate to form the chemical compound.
摘要翻译：一种用于制备化合物的气相沉积方法，其中所述方法包括提供化合物的每个组分元素作为蒸气，并将组分元素蒸气共同沉积在共同的基底上，其中：至少一种组分的蒸气使用裂解源提供元件; 使用等离子体源提供至少一个其它组分元素的蒸气; 并且提供至少一个另外的组分元素蒸汽; 其中所述组分元素在所述基材上反应以形成所述化合物。

75. 发明申请

US20150122318A1 LATTICE MATCHABLE ALLOY FOR SOLAR CELLS 审中-公开
标题翻译：太阳能电池适用合金
公开(公告)号：US20150122318A1
公开(公告)日：2015-05-07
申请号：US14597621
申请日：2015-01-15
申请人： SOLAR JUNCTION CORPORATION
发明人： REBECCA ELIZABETH JONES-ALBERTUS , HOMAN BERNARD YUEN , TING LIU , PRANOB MISRA
IPC分类号： H01L31/0725
CPC分类号： H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≧x≧0.18, 0.025≧y≧0.04 and 0.001≧z≧0.03.
摘要翻译：提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物（N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07≥x≥0.18,0.025≥y≥0.04且0.001≥Z≥0.03。

76. 发明申请

US20150027520A1 LATTICE MATCHABLE ALLOY FOR SOLAR CELLS 有权
公开(公告)号：US20150027520A1
公开(公告)日：2015-01-29
申请号：US14512224
申请日：2014-10-10
申请人： SOLAR JUNCTION CORPORATION
发明人： REBECCA ELIZABETH JONES-ALBERTUS , HOMAN BERNARD YUEN , TING LlU , PRANOB MISRA
IPC分类号： H01L31/0735 , H01L31/0725 , H01L31/0304
CPC分类号： H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.

77. 发明授权

US08921851B2 Non-polar plane of wurtzite structure material 有权
标题翻译：纤锌矿结构材料非极性面
公开(公告)号：US08921851B2
公开(公告)日：2014-12-30
申请号：US13798882
申请日：2013-03-13
申请人： National Chiao Tung University
发明人： Li Chang , Yen-Teng Ho
IPC分类号： H01L29/04 , C30B23/02 , C30B23/06 , C30B23/08 , C30B25/18 , C30B25/06 , C30B29/16 , C30B29/40 , H01L29/20 , H01L29/24 , H01L21/02
CPC分类号： C30B23/025 , C30B23/066 , C30B23/08 , C30B25/06 , C30B25/18 , C30B25/186 , C30B29/16 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02554 , H01L21/02609 , H01L21/02631 , H01L29/045 , H01L29/2003 , H01L29/24
摘要： The present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method.
摘要翻译：本发明涉及一种生长纤锌矿结构的新型非极性（1340）面外延层的方法，其包括以下步骤：提供具有钙钛矿结构的单晶氧化物; 使用单晶氧化物的平面作为基板; 并通过气相沉积法在单晶氧化物的平面上形成纤锌矿半导体的非极性（1340）面外延层。本发明还提供根据上述方法获得的具有非极性（1340）面的外延层。

78. 发明申请

US20140338589A1 Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods 审中-公开
标题翻译：具有减少位错堆积和相关方法的半导体异质结构
公开(公告)号：US20140338589A1
公开(公告)日：2014-11-20
申请号：US14446421
申请日：2014-07-30
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Christopher Leitz , Christopher J. Vineis , Richard Westhoff , Vicky Yang , Matthew T. Currie
IPC分类号： C30B25/18 , H01L21/02 , C30B29/52 , C30B23/06 , C30B23/02
CPC分类号： H01L21/0251 , C30B23/025 , C30B23/066 , C30B25/02 , C30B25/183 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/0262 , H01L21/823807
摘要： Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.
摘要翻译：组分梯度半导体层中的位错堆叠被减少或消除，从而导致半导体器件的产量和可制造性的提高。这是通过在组成渐变层的生长和弛豫期间引入具有多个穿透位错基本上均匀分布在其表面上的半导体层作为起始层和/或至少一个中间层来实现的。半导体层可以包括接近半导体层的表面并且穿透位错均匀分布在其中的晶种层。

79. 发明申请

US20140331919A1 METHOD FOR PRODUCING GA2O3 CRYSTAL FILM 有权
标题翻译：生产GA2O3晶体膜的方法
公开(公告)号：US20140331919A1
公开(公告)日：2014-11-13
申请号：US14357180
申请日：2012-11-27
申请人： TAMURA CORPORATION
发明人： Kohei Sasaki
IPC分类号： C30B23/06
CPC分类号： C30B23/066 , C30B23/005 , C30B29/16 , H01L21/02414 , H01L21/02565 , H01L21/02576 , H01L21/02631
摘要： A Ga2O3 crystal film is epitaxially grown on a Ga2O3 crystal substrate using an MBE method, while controlling the n-type conductivity with high accuracy. Provided is a method for producing a Ga2O3 crystal film, wherein a conductive Ga2O3 crystal film is formed by epitaxial growth using an MBE method. This method for producing a Ga2O3 crystal film comprises a step wherein a Ga2O3 single crystal film containing Sn is grown by producing a Ga vapor and an Sn vapor and supplying the Ga vapor and the Sn vapor to the surface of a Ga2O3 crystal substrate as molecular beams The Sn vapor is produced by heating Sn oxide that is filled in a cell of an MBE apparatus.
摘要翻译：使用MBE法在Ga 2 O 3晶体基板上外延生长Ga 2 O 3晶体膜，同时以高精度控制n型导电性。提供一种制造Ga 2 O 3晶体膜的方法，其中通过使用MBE方法的外延生长形成导电Ga 2 O 3晶体膜。这种制造Ga 2 O 3晶体膜的方法包括以下步骤：通过产生Ga蒸气和Sn蒸气生长含有Sn的Ga 2 O 3单晶膜，并将Ga蒸气和Sn蒸气供给到Ga 2 O 3晶体基板的表面作为分子束通过加热填充在MBE装置的电池中的Sn氧化物来生成Sn蒸气。

80. 发明申请

US20140308590A1 SOLID POLYMER ELECTROLYTE, METHOD OF PREPARING SOLID POLYMER ELECTROLYTE AND ELECTROCHEMICAL DEVICE 有权
标题翻译：固体聚合物电解质，固体聚合物电解质的制备方法和电化学装置
公开(公告)号：US20140308590A1
公开(公告)日：2014-10-16
申请号：US14365755
申请日：2012-11-05
申请人： Sony Corporation
发明人： Hiromichi Ohta , Noriyuki Aoki
IPC分类号： B01D53/32 , H01M10/0562 , H01M8/10 , H01G9/15 , B01D61/44 , C30B25/02 , C30B23/06 , H01M10/052 , C25B13/04
CPC分类号： B01D53/326 , B01D61/44 , C01B33/12 , C25B13/04 , C30B1/00 , C30B23/066 , C30B25/02 , C30B29/22 , C30B29/30 , C30B29/32 , H01B1/122 , H01G9/15 , H01G11/06 , H01G11/56 , H01M8/1016 , H01M8/1246 , H01M10/052 , H01M10/0525 , H01M10/0562 , H01M10/0585 , H01M2300/0068 , H01M2300/0071 , Y02E60/13 , Y02E60/525 , Y02P70/54 , Y02P70/56 , Y02T10/7011 , Y02T10/7022
摘要： Provided is a solid electrolyte including an epitaxial thin film crystal made of an electrolyte containing at least lithium.
摘要翻译：提供一种固体电解质，其包括由至少含锂的电解质制成的外延薄膜晶体。

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