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71. 发明授权

US07781081B2 Magnetic recording medium, manufacturing method for the magnetic recording medium, and magnetic read/write apparatus 有权
标题翻译：磁记录介质，磁记录介质的制造方法和磁读/写装置
公开(公告)号：US07781081B2
公开(公告)日：2010-08-24
申请号：US10583951
申请日：2004-12-24
申请人： Tomoyuki Maeda , Soichi Oikawa , Takeshi Iwasaki , Futoshi Nakamura , Hiroshi Sakai , Kenji Shimizu , Akira Sakawaki
发明人： Tomoyuki Maeda , Soichi Oikawa , Takeshi Iwasaki , Futoshi Nakamura , Hiroshi Sakai , Kenji Shimizu , Akira Sakawaki
IPC分类号： G11B5/66
CPC分类号： G11B5/7325 , C23C14/0688 , C23C14/185 , G11B5/65 , G11B5/656 , G11B5/712 , G11B5/85
摘要： A magnetic recording medium 62 wherein a substrate 11, undercoating layers 13 and 14 formed on the substrate 11, and a magnetic recording layer 15, which include the magnetic crystal grain and the grain boundary field which encloses magnetic crystal grains, are included. The grain boundary field includes Ti oxide, and the ratio of the substance amount of the Ti oxide in the magnetic recording layer 15 is 5 mol % or more and 15 mol % or less, and the Ti oxide includes at least TiO and/or Ti2O3s.
摘要翻译：包括磁记录介质62，其中包括形成在基板11上的基板11，底涂层13和14以及磁记录层15，其包括磁晶粒和包围磁晶粒的晶界。晶界包括Ti氧化物，磁记录层15中的Ti氧化物的物质的比例为5摩尔％以上且15摩尔％以下，Ti氧化物至少包含TiO和/或Ti 2 O 3 。

72. 发明申请

US20100128390A1 METHOD FOR FORMING MAGNETIC LAYER, MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS 有权
标题翻译：形成磁层，磁记录介质，磁记录和再现装置的方法
公开(公告)号：US20100128390A1
公开(公告)日：2010-05-27
申请号：US12614999
申请日：2009-11-09
申请人： Takashi TANAKA
发明人： Takashi TANAKA
IPC分类号： G11B5/127 , C23C14/34 , G11B5/66
CPC分类号： G11B5/851 , C23C14/0036 , C23C14/0688 , C23C14/3492 , G11B5/65 , H01F41/18
摘要： The invention provides a method of forming a magnetic layer with stable magnetic properties and stable recording-and-reproducing properties, by uniformizing the distribution of oxygen radical concentration upon reactive sputtering, and thereby uniformizing the concentration of oxygen to be taken into the magnetic layer along the plane direction. That is, the invention relates to a method of forming a magnetic layer by reactive sputtering, which comprises: placing a substrate in a reaction container; arranging a pair of electrode units comprising sputtering electrodes and targets which are disposed on surfaces of the sputtering electrodes and which contain chromium other than the oxide thereof, so that the electrode units respectively face both sides of the substrate while the targets are on the substrate sides; feeding an argon-water mixture gas to vicinities of the respective surfaces on the substrate sides of the pair of electrode units; and applying reactive sputtering so that the chromium other than the oxide thereof contained in the targets can be made into chromium oxide as a constituent to form the magnetic layer having the granular structure.
摘要翻译：本发明提供了一种形成具有稳定的磁特性和稳定的记录和再现性能的磁性层的方法，通过使反应溅射时氧自由基浓度的分布均匀化，从而使得被引入到磁性层中的氧浓度均匀化平面方向。也就是说，本发明涉及通过反应溅射形成磁性层的方法，其包括：将基板放置在反应容器中; 布置一对电极单元，其包括溅射电极和靶，其设置在溅射电极的表面上并且包含除了其氧化物之外的铬，使得电极单元分别面对基板的两侧，同时靶位于基板侧 ; 将氩 - 水混合气体供给到所述一对电极单元的基板侧上的各个表面的附近; 并施加反应性溅射使得靶中包含的除其氧化物之外的铬可以制成氧化铬作为组分，以形成具有颗粒结构的磁性层。

73. 发明申请

US20100092747A1 INFRARED-REFLECTING FILMS AND METHOD FOR MAKING THE SAME 审中-公开
标题翻译：红外反射膜及其制造方法
公开(公告)号：US20100092747A1
公开(公告)日：2010-04-15
申请号：US12251333
申请日：2008-10-14
申请人： Yip-Wah Chung , Michael Graham , Alpana Ranade
发明人： Yip-Wah Chung , Michael Graham , Alpana Ranade
IPC分类号： B32B18/00 , B32B13/00 , B32B15/00
CPC分类号： C03C17/007 , C03C2217/45 , C03C2217/479 , C23C14/022 , C23C14/0688 , C23C14/083 , C23C14/5853 , H01L31/02168 , Y02E10/50 , Y10T428/31678
摘要： There is provided single layer infrared-reflecting films and a method of making the same that provide enhanced reflectivity in an 800 nanometer to 2500 nanometer infrared waveband. The method comprises providing a substrate, depositing onto the substrate a mixture of an oxide matrix material and either a conductive metal dopant or a higher valence cation, and producing the infrared-reflecting film.
摘要翻译：提供单层红外反射膜及其制造方法，其在800纳米至2500纳米的红外波段中提供增强的反射率。该方法包括提供衬底，在衬底上沉积氧化物基质材料和导电金属掺杂剂或高价阳离子的混合物，并产生红外反射膜。

74. 发明申请

US20100047565A1 PROCESS FOR DEPOSITING AN ELECTRICALLY CONDUCTIVE LAYER AND ASSEMBLY OF THE LAYER ON A POROUS SUPPORT SUBSTRATE 审中-公开
标题翻译：用于沉积导电层的方法和多层支撑基板上的层的组装
公开(公告)号：US20100047565A1
公开(公告)日：2010-02-25
申请号：US12349735
申请日：2009-01-07
申请人： Karl Kailer , Georg Kunschert , Stefan Schlichtherle , Georg Strauss
发明人： Karl Kailer , Georg Kunschert , Stefan Schlichtherle , Georg Strauss
IPC分类号： B32B15/04 , C23C14/34
CPC分类号： H01M8/10 , C23C14/0688 , C23C14/08 , C23C14/088 , C23C14/34 , C23C14/3485 , H01M4/9033 , Y10T428/24997 , Y10T428/265
摘要： A process for depositing an electrically conductive, preferably perovskitic layer uses a pulsed sputtering process. The layer has a low diffusivity for the elements in the iron group and is especially suitable for use in solid oxide fuel cells (SOFC). An assembly of the electrically conductive ceramic layer on a porous support substrate is also provided.
摘要翻译：用于沉积导电，优选钙钛矿层的方法使用脉冲溅射工艺。该层对于铁基中的元素具有低扩散性，并且特别适用于固体氧化物燃料电池（SOFC）。还提供了多孔支撑基板上的导电陶瓷层的组件。

75. 发明申请

US20100040898A1 THIN FILM FOR REFLECTION FILM OR FOR SEMI-TRANSPARENT REFLECTION FILM, SPUTTERING TARGET AND OPTICAL RECORDING MEDIUM 有权
标题翻译：用于反射膜的薄膜或半透明反射膜，溅射目标和光学记录介质
公开(公告)号：US20100040898A1
公开(公告)日：2010-02-18
申请号：US11915400
申请日：2006-11-17
申请人： Tomokazu Obata , Hiroshi Yanagihara
发明人： Tomokazu Obata , Hiroshi Yanagihara
IPC分类号： G02B5/08 , B32B15/04 , B32B15/02 , B32B5/02 , C23C14/06 , G11B7/258
CPC分类号： C23C14/0688 , C23C14/205 , C23C14/3414 , G02B1/105 , G02B1/14 , G02B5/0833 , G11B7/24038 , G11B7/259 , G11B7/266 , Y10T428/12056 , Y10T428/1209 , Y10T428/12097 , Y10T428/21 , Y10T428/31678
摘要： A thin film for a reflection film or a semi-transparent reflection film, which has a compound phase comprising at least one selected from the group consisting of a nitride, an oxide, a complex oxide, a nitroxide, a carbide, a sulfide, a chloride, a silicide, a fluoride, a boride, a hydride, a phosphide, a selenide and a telluride of gallium, palladium or copper, dispersed in a matrix formed of silver or a silver alloy. The compound phase in the thin film may include at least one compound selected from the group consisting of nitride, oxide, complex oxide, nitroxide, carbide, sulfide, chloride, silicide, fluoride, boride, hydride, phosphide, selenide and telluride of silver. The thin film of the present invention minimizes the deterioration of the reflectance even after a long period of use, and can prolong the life of various devices which use the thin film as a reflection film, such as an optical recording medium and a display. The thin film can be also applied to a semi-reflective/semi-transparent film used in the optical recording medium.
摘要翻译：一种用于反射膜或半透明反射膜的薄膜，其具有包含选自氮化物，氧化物，复合氧化物，氮氧化物，碳化物，硫化物，氯化物，硅化物，氟化物，硼化物，氢化物，磷化物，硒化物和分散在由银或银合金形成的基体中的镓，钯或铜的碲化物。薄膜中的化合物相可以包括选自氮化物，氧化物，复合氧化物，氮氧化物，碳化物，硫化物，氯化物，硅化物，氟化物，硼化物，氢化物，磷化物，硒化物和银的碲化物中的至少一种化合物。本发明的薄膜即使在长时间使用后也使反射率的劣化最小化，并且可以延长使用薄膜作为诸如光学记录介质和显示器的反射膜的各种装置的使用寿命。该薄膜也可以应用于在光学记录介质中使用的半反射/半透明薄膜。

76. 发明申请

US20100015356A1 IN-LINE FILM FORMING APPARATUS AND MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM 审中-公开
标题翻译：磁带记录介质的在线成膜装置和制造方法
公开(公告)号：US20100015356A1
公开(公告)日：2010-01-21
申请号：US12498051
申请日：2009-07-06
申请人： Masato FUKUSHIMA , Akira Sakawaki , Tomoo Shige
发明人： Masato FUKUSHIMA , Akira Sakawaki , Tomoo Shige
IPC分类号： C23C16/453 , C23C14/34
CPC分类号： G11B5/855 , C03C10/00 , C03C17/002 , C03C2218/34 , C23C14/0688 , C23C14/568 , C23C14/5826 , C23C14/5846 , C23C14/5873
摘要： An in-line film forming apparatus is provided which prevents uneven processing from occurring when reactive plasma treatment or ion irradiation treatment is performed on a substrate held by a carrier. A carrier (25) includes a holder (28) provided with a hole (29) which allows a substrate to be disposed therein, and a plurality of supporting members (30) attached to the periphery of the hole (29) of the holder (28) in an elastically deformable manner, and is capable of detachably holding the substrate fitted into the inside of the supporting members (30) while an outer peripheral portion of the substrate is made to abut on the plurality of supporting members (30). Within a chamber which performs reactive plasma treatment or ion irradiation treatment on the substrate held by the carrier (25), a ring member (32) having an opening (32a) in a position corresponding to the substrate is disposed so as to face at least one surface or both surfaces of the substrate held by the carrier (25). Negative potential is applied to the ring member (32), and the holder (28) is grounded.
摘要翻译：提供了一种在线成膜装置，其防止在对由载体保持的基板进行反应等离子体处理或离子辐照处理时发生不均匀的处理。载体（25）包括：保持器（28），其设置有允许将基板设置在其中的孔（29）;以及多个支撑构件（30），其附接到保持器的孔（29）的周边 28），并且能够将基板的外周部抵接在多个支撑部件（30）上，从而可拆卸地保持嵌合在支撑部件（30）的内部的基板。在由载体（25）保持的基板上进行反应等离子体处理或离子辐射处理的室内，具有与基板对应的位置具有开口（32a）的环状部件（32）至少面向由载体（25）保持的基板的一个表面或两个表面。负电位施加到环构件（32）上，保持器（28）接地。

77. 发明申请

US20090229976A1 Sputtering Target Material Containing Cobalt/Chromium/Platinum Matrix Phase and Oxide Phase, and Process for Producing the Same 审中-公开
标题翻译：包含钴/铬/铂基体相和氧化物相的溅射靶材料及其制造方法
公开(公告)号：US20090229976A1
公开(公告)日：2009-09-17
申请号：US12401280
申请日：2009-03-10
申请人： Kazuteru KATO , Junichi KIYOTO
发明人： Kazuteru KATO , Junichi KIYOTO
IPC分类号： C23C14/10 , C23C14/08 , B22F1/00 , B22F3/105
CPC分类号： C23C14/3414 , B22F3/105 , C22C32/0021 , C22C32/0026 , C23C14/0688
摘要： Sputtering target materials have improved film-sputtering properties by containing finer metal oxide particles. A process for producing a sputtering target material including a cobalt/chromium/platinum matrix phase and an oxide phase that includes two or more metal oxides including at least chromium oxide wherein the oxide phase is in the form of particles, includes sintering material powder to form the sputtering target material wherein the material powder contains chromium oxide at not less than 1.0 mol % based on the material powder.
摘要翻译：溅射靶材料通过含有较细金属氧化物颗粒而具有改善的膜溅射性能。一种制造包括钴/铬/铂基质相和氧化物相的溅射靶材的方法，其包括至少包含氧化铬的氧化铬至少包含氧化铬的氧化物相，其中氧化物相为颗粒形式，包括烧结材料粉末以形成溅射靶材料，其中所述材料粉末含有基于所述材料粉末不小于1.0mol％的氧化铬。

78. 发明申请

US20090087634A1 Golden Ornament and Process for Producing the Same 有权
标题翻译：金色装饰品及其制作方法
公开(公告)号：US20090087634A1
公开(公告)日：2009-04-02
申请号：US11910163
申请日：2006-03-31
申请人： Koichi Naoi , Fumio Tase , Yukio Miya , Osamu Tanaka , Masayoshi Ushikubo
发明人： Koichi Naoi , Fumio Tase , Yukio Miya , Osamu Tanaka , Masayoshi Ushikubo
IPC分类号： B32B5/14 , B32B15/04 , C23C16/06
CPC分类号： C23C14/027 , C23C14/0015 , C23C14/0021 , C23C14/0688 , C23C14/28 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/36 , Y10T428/2495 , Y10T428/24975 , Y10T428/24992
摘要： A golden ornament includes a base material; a Ti coating film which is formed on a surface of the base material in an atmosphere of an inert gas other than nitrogen and whose Ti atom content is constant in the thickness direction; a TiN gradient coating film which is formed on the Ti coating film and whose N atom content has a gradient in the thickness direction; a TiN coating film which is formed on the TiN gradient coating film and whose contents of Ti atoms and N atoms are constant in the thickness direction; an Au—TiN mixture gradient coating film which is formed on the TiN coating film and whose Au atom content has a gradient in the thickness direction; and an Au—TiN mixture coating film which is formed on the Au—TiN mixture gradient coating film and whose contents of Au atoms, Ti atoms, and N atoms are constant in the thickness direction. The golden ornament may further include an Au coating film or an Au alloy coating film which is formed on the Au—TiN mixture coating film and whose Au atom content is constant in the thickness direction.
摘要翻译：金色装饰品包括基材; 形成在所述基材的表面上的除氮以外的惰性气体的气氛中且Ti原子含量在厚度方向上恒定的Ti涂膜; 形成在Ti涂膜上并且其氮原子含量在厚度方向上具有梯度的TiN梯度涂膜; 形成在TiN梯度涂膜上，其Ti原子和N原子的含量在厚度方向上恒定的TiN涂膜; Au-TiN混合物梯度涂层，其形成在TiN涂膜上，其Au原子含量在厚度方向上具有梯度; 以及在Au-TiN混合物梯度涂膜上形成的Au-TiN混合物涂膜，其Au原子，Ti原子和N原子的含量在厚度方向上是恒定的。金色装饰品还可以包括形成在Au-TiN混合物涂膜上并且其Au原子含量在厚度方向上恒定的Au涂膜或Au合金涂膜。

79. 发明申请

US20090011257A1 Layer system for the formation of a surface layer on a surface of a substrate and also arc vaporization source for the manufacture of a layer system 有权
标题翻译：用于在基板的表面上形成表面层的层系统，以及用于制造层系统的电弧蒸发源
公开(公告)号：US20090011257A1
公开(公告)日：2009-01-08
申请号：US12145216
申请日：2008-06-24
申请人： Jorg Vetter
发明人： Jorg Vetter
IPC分类号： B32B9/04 , C01B35/10 , C01F17/00
CPC分类号： B32B9/00 , C22C21/00 , C23C14/0641 , C23C14/0688 , C23C14/325 , C23C14/3414
摘要： The invention relates to a layer system for the formation of a surface layer on a surface of a substrate, in particular on the surface of a tool, wherein the layer system includes at least one first hard layer of the composition (AlaMgbCrcMedBeAXmSik)α(NuCvOw)β with (a+b+c+d+e+m+k)=α, (u+v+w)=β and (α+β)=100, wherein 40 ≦α≦60 and wherein Me is at least one element of the group of the chemical elements consisting of: the secondary groups IVb, Vb and VIb of the periodic system of the chemical elements. The component AX is at least one element of the group of the chemical elements consisting of: the elements of the main group Ia and the elements Be, Ca, Sr, Ba and the elements of the secondary groups VIIb, VIIIb, Ib, IIb, IIIb and the elements of the group of the lanthanoids, of the periodic system of the elements, wherein 0.004≦m
摘要翻译：本发明涉及一种用于在基材表面，特别是在工具表面上形成表面层的层系统，其中层系统包括组合物的至少一个第一硬层（AlaMgbCrcMedBeAXmSik）α（NuCvOw ）β（a + b + c + d + e + m + k）=α，（u + v + w）=β和（α+β）= 100，其中40≤α≤60，其中Me 是化学元素组中的至少一种元素，其由化学元素的周期系统的第二族IVb，Vb和VIb组成。组分AX是由以下组成的化学元素组中的至少一种元素：主族Ia的元素和元素Be，Ca，Sr，Ba以及仲族VIIb，VIIIb，Ib，IIb， IIIb和元素周期系统中镧系元素的元素，其中0.004 <= m <60，优选0.01 <= m <50。根据本发明，0.4 <= a <= 58和0.04 <= b <= 12和18 <= c <= 42。

80. 发明申请

US20070218316A1 Magnetic recording medium, method of producing same, and magnetic storage apparatus 审中-公开
标题翻译：磁记录介质，其制造方法和磁存储装置
公开(公告)号：US20070218316A1
公开(公告)日：2007-09-20
申请号：US11474402
申请日：2006-06-26
申请人： Akihiro Inomata
发明人： Akihiro Inomata
IPC分类号： G11B5/66 , C23C14/00
CPC分类号： G11B5/65 , C23C14/025 , C23C14/0605 , C23C14/0688 , G11B5/7325 , G11B5/851
摘要： A magnetic recording medium according to one aspect of the present invention includes a substrate; an underlayer positioned on the substrate and made of a material having a body-centered-cubic crystalline structure or a B2 crystalline structure; a first intermediate layer positioned on the underlayer and having a hexagonal closest packing crystalline structure, and being made of Co or a Co alloy; a second intermediate layer positioned on the first intermediate layer and having a hexagonal closest packing crystalline structure, and being made of a material selected from the group consisting of Ru, Ti, Re, Zr, Hf, and a Ru alloy; and a magnetic layer positioned on the second intermediate layer and including multiple magnetic grains each having a hexagonal closest packing crystalline structure and an axis of easy magnetization oriented in a direction substantially parallel to a surface of the substrate, wherein the magnetic grains are isolated from each other.
摘要翻译：根据本发明的一个方面的磁记录介质包括：基板; 位于基板上并由具有体心立方晶体结构或B2晶体结构的材料制成的底层; 第一中间层位于底层上并且具有六方最接近的填充结晶结构，并由Co或Co合金制成; 位于所述第一中间层上且具有六方最接近的填充结晶结构的第二中间层，并且由选自Ru，Ti，Re，Zr，Hf和Ru合金的材料制成; 以及磁性层，其位于所述第二中间层上，并且包括多个磁性颗粒，每个所述磁性颗粒具有六边形最接近的填充结晶结构，并且容易磁化的轴在基本上平行于所述衬底的表面的方向上定向，其他。

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