专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20120064715A1 INTEGRATION OF BOTTOM-UP METAL FILM DEPOSITION 有权
标题翻译：底部金属膜沉积的整合
公开(公告)号：US20120064715A1
公开(公告)日：2012-03-15
申请号：US13302520
申请日：2011-11-22
申请人： Simon Su-Horng LIN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
发明人： Simon Su-Horng LIN , Chi-Ming YANG , Chyi Shyuan CHERN , Chin-Hsiang LIN
IPC分类号： H01L21/26
CPC分类号： H01L29/78 , C23C14/022 , C23C14/046 , C23C14/18 , C23C14/221 , C23C16/0263 , C23C16/045 , C23C16/06 , C23C16/48 , C23C16/484 , H01L21/28079 , H01L21/28088 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76865 , H01L21/76877 , H01L29/4966 , H01L29/66545
摘要： A method of depositing a metal film on a substrate with patterned features includes placing a substrate with patterned features into a photo-induced chemical vapor deposition (PI-CVD) process chamber. The method also includes depositing a metal film by PI-CVD to fill the patterned features from bottom up.
摘要翻译：在具有图案特征的基板上沉积金属膜的方法包括将具有图案化特征的基板放置在光致化学气相沉积（PI-CVD）处理室中。该方法还包括通过PI-CVD沉积金属膜以从下向上填充图案化特征。

72. 发明申请

US20120028074A1 COATING, ARTICLE COATED WITH COATING, AND METHOD FOR MANUFACTURING ARTICLE 失效
标题翻译：涂料，涂有涂料的制品和制造方法
公开(公告)号：US20120028074A1
公开(公告)日：2012-02-02
申请号：US12968416
申请日：2010-12-15
申请人： HSIN-PEI CHANG , WEN-RONG CHEN , HUAN-WU CHIANG , CHENG-SHI CHEN , CHUANG MA
发明人： HSIN-PEI CHANG , WEN-RONG CHEN , HUAN-WU CHIANG , CHENG-SHI CHEN , CHUANG MA
IPC分类号： B32B15/01 , C23C14/35 , C23C14/16
CPC分类号： C23C14/0664 , C23C14/0036 , C23C14/022 , C23C28/044 , C23C28/30 , C23C28/347 , C23C28/40 , C23C28/42 , C23C28/44 , Y10T428/12806 , Y10T428/24942 , Y10T428/265
摘要： A coating includes a nano-composite base comprising a number of films, the films stacked together one after another. Each film includes a nickel-titanium carbonitride layer and a titanium carbonitride layer.
摘要翻译：涂层包括包含多个膜的纳米复合基材，所述膜彼此堆叠在一起。每个膜包括镍 - 钛碳氮化物层和碳氮化钛层。

73. 发明申请

US20120021210A1 ARTICLE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：其制造方法及其制造方法
公开(公告)号：US20120021210A1
公开(公告)日：2012-01-26
申请号：US12968424
申请日：2010-12-15
申请人： HSIN-PEI CHANG , WEN-RONG CHEN , HUAN-WU CHIANG , CHENG-SHI CHEN , CHUANG MA
发明人： HSIN-PEI CHANG , WEN-RONG CHEN , HUAN-WU CHIANG , CHENG-SHI CHEN , CHUANG MA
IPC分类号： B32B5/00 , C23C14/06 , C01G37/02 , C23C14/35 , B32B9/00 , B32B15/00
CPC分类号： C23C14/0015 , C23C14/022 , C23C14/025 , C23C14/083 , C23C14/345 , C23C14/3492 , Y10T428/12611 , Y10T428/12826 , Y10T428/12847 , Y10T428/26 , Y10T428/265
摘要： A article made by vacuum deposition, includes a substrate; and a color layer deposited on the substrate, wherein the color layer has an L* value between about 75 to about 80, a a* value between about −5 to about −10, and a b* value between about 15 to about 20 in the CIE LAB color space.
摘要翻译：通过真空沉积制成的制品包括基材; 和沉积在基底上的着色层，其中在CIE中，着色层的L *值为约75至约80，aa *值为约-5至约-10，ab *值为约15至约20 LAB颜色空间。

74. 发明授权

US08088685B2 Integration of bottom-up metal film deposition 有权
标题翻译：整合自下而上的金属膜沉积
公开(公告)号：US08088685B2
公开(公告)日：2012-01-03
申请号：US12702525
申请日：2010-02-09
申请人： Simon Su-Horng Lin , Chi-Ming Yang , Chyi Shyuan Chern , Chin-Hsiang Lin
发明人： Simon Su-Horng Lin , Chi-Ming Yang , Chyi Shyuan Chern , Chin-Hsiang Lin
IPC分类号： H01L21/4763
CPC分类号： H01L29/78 , C23C14/022 , C23C14/046 , C23C14/18 , C23C14/221 , C23C16/0263 , C23C16/045 , C23C16/06 , C23C16/48 , C23C16/484 , H01L21/28079 , H01L21/28088 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76865 , H01L21/76877 , H01L29/4966 , H01L29/66545
摘要： The described embodiments of methods of bottom-up metal deposition to fill interconnect and replacement gate structures enable gap-filling of fine features with high aspect ratios without voids and provide metal films with good film quality. In-situ pretreatment of metal film(s) deposited by gas cluster ion beam (GCIB) allows removal of surface impurities and surface oxide to improve adhesion between an underlying layer with the deposited metal film(s). Metal films deposited by photo-induced chemical vapor deposition (PI-CVD) using high energy of low-frequency light source(s) at relatively low temperature exhibit liquid-like nature, which allows the metal films to fill fine feature from bottom up. The post deposition annealing of metal film(s) deposited by PI-CVD densifies the metal film(s) and removes residual gaseous species from the metal film(s). For advanced manufacturing, such bottom-up metal deposition methods address the challenges of gap-filling of fine features with high aspect ratios.
摘要翻译：自下而上金属沉积以填充互连和替代栅极结构的方法的所述实施例使得能够在没有空隙的情况下间隙填充具有高纵横比的精细特征，并提供具有良好膜质量的金属膜。通过气体簇离子束（GCIB）沉积的金属膜的原位预处理允许去除表面杂质和表面氧化物以改善下层与沉积的金属膜之间的粘附。通过使用高能量的低频光源在较低温度下通过光致化学气相沉积（PI-CVD）沉积的金属膜表现出液体性质，这允许金属膜从下向上填充精细特征。通过PI-CVD沉积的金属膜的后沉积退火致密化金属膜并从金属膜去除残留的气态物质。对于先进的制造，这种自下而上的金属沉积方法解决了具有高纵横比的精细特征的间隙填充的挑战。

75. 发明授权

US08075985B2 Metallized biaxially oriented polypropylene film with high metal adhesion 有权
标题翻译：具有金属附着力的金属化双轴取向聚丙烯薄膜
公开(公告)号：US08075985B2
公开(公告)日：2011-12-13
申请号：US11806998
申请日：2007-06-05
申请人： Mark S. Lee , Tien-Kuei Su
发明人： Mark S. Lee , Tien-Kuei Su
IPC分类号： B32B7/02
CPC分类号： B32B27/32 , C08L23/0815 , C08L23/142 , C08L23/16 , C08L2666/06 , C09J123/14 , C23C14/022 , C23C14/20 , Y10T428/24942 , Y10T428/265 , Y10T428/31692 , Y10T428/31909 , Y10T428/31913
摘要： Described are laminate films including a polyolefin base layer, and a metal receiving layer including a blend of propylene homopolymer or mini-random propylene-ethylene copolymer, and an amorphous poly-alpha-olefin or ethylene-propylene elastomer. The metal receiving layer may also include an ethylene-propylene copolymer. The laminate film may also include additional layers such as an additional polyolefin resin-containing layer, a metal layer, or combinations thereof.
摘要翻译：描述了包括聚烯烃基层和包含丙烯均聚物或微型无规丙烯 - 乙烯共聚物的共混物和无定形聚-α-烯烃或乙烯 - 丙烯弹性体的金属接收层的层压膜。金属接收层还可以包括乙烯 - 丙烯共聚物。层压膜还可以包括另外的层，例如另外的含聚烯烃树脂的层，金属层或其组合。

76. 发明申请

US20110160845A1 DRUG DELIVERY SYSTEM AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译：药物递送系统及其制造方法
公开(公告)号：US20110160845A1
公开(公告)日：2011-06-30
申请号：US13041525
申请日：2011-03-07
申请人： Stephen M. Blinn , Richard C. Svrluga
发明人： Stephen M. Blinn , Richard C. Svrluga
IPC分类号： A61F2/82 , A61K9/00 , A61P7/02 , A61P31/00 , A61P35/00 , A61P37/06 , A61P3/06
CPC分类号： A61L31/16 , A61F2/82 , A61F2250/0067 , A61L31/12 , A61L2300/406 , A61L2300/416 , A61L2300/42 , A61L2300/426 , A61L2300/61 , A61L2300/62 , A61L2400/18 , C23C14/022 , C23C14/221 , C23C14/505 , H01J2237/0812 , Y10T428/249988 , Y10T428/31504
摘要： In one embodiment, a drug delivery system and method provide a member including a combination of a drug substance and a polymer or other material, and an encapsulating layer formed in an outer surface of the member by gas cluster ion beam irradiation of the outer surface of the member, which encapsulating layer is adapted to determine one or more characteristics of the drug delivery system.
摘要翻译：在一个实施方案中，药物递送系统和方法提供包括药物物质和聚合物或其他材料的组合的构件，以及通过气体团离子束照射外壳的外表面形成在构件的外表面中的封装层该成员，该封装层适于确定药物递送系统的一个或多个特征。

77. 发明申请

US20110140246A1 DELTA-DOPING AT WAFER LEVEL FOR HIGH THROUGHPUT, HIGH YIELD FABRICATION OF SILICON IMAGING ARRAYS 有权
标题翻译：用于高速穿透的三角形抛光，硅成像阵列的高效制造
公开(公告)号：US20110140246A1
公开(公告)日：2011-06-16
申请号：US12965790
申请日：2010-12-10
申请人： Michael E. Hoenk , Shouleh Nikzad , Todd J. Jones , Frank Greer , Alexander G. Carver
发明人： Michael E. Hoenk , Shouleh Nikzad , Todd J. Jones , Frank Greer , Alexander G. Carver
IPC分类号： H01L29/66 , H01L21/30 , C23C16/02
CPC分类号： H01L27/14601 , C23C14/022 , H01L27/14806 , H01L31/028 , H01L31/0352 , Y02E10/547
摘要： Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3+NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.
摘要翻译：用于生产高量子效率硅器件的系统和方法。硅MBE具有准备室，其使用氧等离子体来提供清洁硅表面以除去杂质和使硅表面氢终止的气体（干燥）NH 3 + NF 3室温氧化物去除过程。直径达8英寸的硅晶片具有可以使用清洁程序和MBE处理（包括增量掺杂）制造的器件。

78. 发明授权

US07955691B2 Hard amorphous carbon film 有权
标题翻译：硬质无定形碳膜
公开(公告)号：US07955691B2
公开(公告)日：2011-06-07
申请号：US12086737
申请日：2006-11-28
申请人： Masaki Moronuki , Takashi Matsui , Yoshiharu Utsumi , Hisanori Ohara
发明人： Masaki Moronuki , Takashi Matsui , Yoshiharu Utsumi , Hisanori Ohara
IPC分类号： B32B9/00
CPC分类号： C23C14/0605 , C23C14/022 , C23C14/024 , C23C14/027 , C23C14/325 , F16C33/043 , F16C33/12 , F16C2206/04 , Y10T428/24975 , Y10T428/24983 , Y10T428/263 , Y10T428/265 , Y10T428/30
摘要： An amorphous hard carbon film comprising a first amorphous carbon layer substantially consists only of carbon formed on a substrate surface and a second amorphous carbon layer substantially consists only of carbon formed on the surface of the first amorphous carbon layer, wherein the transmission electron microscope image of the first amorphous carbon layer is brighter than that of the second amorphous carbon layer when the cross section is observed.
摘要翻译：包含第一无定形碳层的无定形硬碳膜基本上仅由形成在基材表面上的碳组成，而第二无定形碳层基本上仅由形成在第一非晶碳层表面上的碳构成，其中透射电子显微镜图像当观察到横截面时，第一无定形碳层比第二非晶碳层更亮。

79. 发明申请

US20110117344A1 Coated Material 审中-公开
标题翻译：涂层材料
公开(公告)号：US20110117344A1
公开(公告)日：2011-05-19
申请号：US13054412
申请日：2009-07-13
申请人： Lu Chen , Mamoru Kohata
发明人： Lu Chen , Mamoru Kohata
IPC分类号： B32B7/02 , H05H1/32 , B32B18/00 , C04B35/58 , C04B35/584 , C04B35/581
CPC分类号： C23C14/325 , C23C14/022 , C23C14/0641 , Y10T428/2495 , Y10T428/265
摘要： A coated material for a cutting tool can realize long life-time under severe cutting processing conditions such as high-speed processing, high-feed-rate processing, higher hardness of a material to be cut, cutting of a difficult-to-cut material, etc. In a coated material in which a coating is coated on the surface of a substrate, at least one layer of the coating is a hard film having a cubic metallic compound which includes at least one metal element M selected from Al, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and at least one element selected from C, N and O. An X-ray intensity distribution of an α axis in a pole figure for a (111) plane of the hard film has a maximum intensity in an α angle range of 75 to 90°, and an X-ray intensity distribution of an α axis in a pole figure for a (220) plane of the hard film has a maximum intensity in an α angle range of 75 to 90°.
摘要翻译：用于切削工具的涂层材料可以在严格的切割加工条件下实现长寿命，例如高速加工，高进给速度加工，待切割材料的较高硬度，难切割材料的切割等等。在其中在基材的表面上涂布涂层的涂覆材料中，至少一层涂层是具有立方金属化合物的硬膜，其包括至少一种选自Al，Si， Ti，Zr，Hf，V，Nb，Ta，Cr，Mo和W以及选自C，N和O的至少一种元素。（111）的极图中α轴的X射线强度分布，硬膜的平面的α角范围的最大强度为75〜90°，硬膜的（220）面的极图中的α轴的X射线强度分布具有最大强度 α角范围为75〜90°。

80. 发明申请

US20110084307A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译：用于生产III族氮化物半导体发光器件的方法，III族氮化物半导体发光器件和灯
公开(公告)号：US20110084307A1
公开(公告)日：2011-04-14
申请号：US12996329
申请日：2009-06-03
申请人： Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
发明人： Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
IPC分类号： H01L33/40 , H01L33/32
CPC分类号： H01L21/02458 , C23C14/022 , C23C14/0617 , C30B25/183 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02658 , H01L33/007 , H01L33/12 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x
摘要翻译：本发明的一个目的是提供一种具有优异的生产率并生产III族氮化物半导体发光器件和灯的III族氮化物半导体发光器件的制造方法，用于制造III族氮化物半导体的方法在基板（11）上层叠由III族氮化物构成的缓冲层（12）的n型半导体层（14）的发光装置，其特征在于，包括：基底层（14a），发光层（15）和p型半导体层（16）依次层压在缓冲层（12）上，包括：预处理步骤，其中基板（11）用等离子体处理; 缓冲层形成步骤，其中具有由Al x Ga 1-x N（0＆nlE; x <1）表示的组成的缓冲层（12）通过用等离子体激活形成在预处理衬底（11）上并使至少一种金属镓原料和含有V族元素的气体; 以及基底层形成步骤，其中在缓冲层（12）上形成基底层（14a）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式