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71. 发明授权

US09650243B2 Method and apparatus for a seal ring structure 有权
公开(公告)号：US09650243B2
公开(公告)日：2017-05-16
申请号：US15067043
申请日：2016-03-10
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ting-Ying Chen , Yi Hsun Chiu , Ching-Hou Su , Chyi-Tsong Ni
IPC分类号： H01L21/78 , B81C1/00 , H01L23/10 , H01L21/50 , H01L23/00 , H01L21/66
CPC分类号： B81C1/00825 , B81B2207/03 , B81C1/00269 , B81C2203/0118 , B81C2203/019 , B81C2203/035 , B81C2203/036 , B81C2203/054 , H01L21/50 , H01L22/32 , H01L23/10 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/29011 , H01L2224/2908 , H01L2224/29082 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/32148 , H01L2224/32238 , H01L2224/32268 , H01L2224/83123 , H01L2224/83127 , H01L2224/83191 , H01L2224/83193 , H01L2224/83204 , H01L2224/83805 , H01L2224/94 , H01L2924/01322 , H01L2924/1461 , H01L2924/15787 , H01L2924/01029 , H01L2924/01032 , H01L2924/00 , H01L2224/83
摘要： A wafer seal ring may be formed on a first and/or a second wafer. One or both of the first and/or second wafers may have one or more dies formed thereon. The wafer seal ring may be formed to surround the dies of a corresponding wafer. One or more die seal rings may be formed around the one or more dies. The wafer seal ring may be formed to a height that may be approximately equal to a height of one or more die seal rings formed on the first and/or second wafer. The wafer seal ring may be formed to provide for eutectic or fusion bonding processes. The first and second wafers may be bonded together to form a seal ring structure between the first and second wafers. The seal ring structure may provide a hermetic seal between the first and second wafers.

72. 发明申请

US20150008788A1 LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES 有权
标题翻译：低温陶瓷微电子结构
公开(公告)号：US20150008788A1
公开(公告)日：2015-01-08
申请号：US14185160
申请日：2014-02-20
申请人： The Royal Institution for the Advancement of Learning / McGill University
发明人： Mourad El-Gamal , Frederic Nabki , Paul-Vahe Cicek
IPC分类号： B81C1/00 , B81B7/00 , B81B3/00
CPC分类号： B81C1/00666 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2201/0235 , B81B2201/0271 , B81B2201/03 , B81B2207/015 , B81B2207/03 , B81C1/00063 , B81C1/00246 , B81C1/00396 , B81C1/00587 , B81C2201/014 , B81C2201/0169 , B81C2201/0174 , B81C2203/0721 , B81C2203/0735
摘要： A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
摘要翻译：提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如作为Si CMOS电路。该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

73. 发明申请

US20140238122A1 Apparatus and Method for Measuring Phase Behavior 有权
标题翻译：用于测量相位行为的装置和方法
公开(公告)号：US20140238122A1
公开(公告)日：2014-08-28
申请号：US14346965
申请日：2012-07-03
申请人： Farshid Mostowfi , Shahnawaz Hossain Molla
发明人： Farshid Mostowfi , Shahnawaz Hossain Molla
IPC分类号： E21B49/00
CPC分类号： E21B49/00 , B01L3/5027 , B01L2200/0673 , B01L2300/0816 , B01L2300/0883 , B01L2300/14 , B01L2400/0406 , B01L2400/049 , B81B2207/03 , G01N21/05 , G01N21/55 , G01N33/2823 , G01N35/1097 , G01N2021/0346
摘要： An apparatus for measuring phase behavior of a reservoir fluid comprises a first sample container and a second sample container in fluid communication with a microfluidic device defining a microchannel. A first pump and a second pump are operably associated with the sample containers and the microfluidic device to fill the microchannel with a reservoir fluid and to maintain a predetermined pressure of reservoir fluid within the microchannel.
摘要翻译：用于测量储存器流体的相位行为的装置包括与限定微通道的微流体装置流体连通的第一样品容器和第二样品容器。第一泵和第二泵与样品容器和微流体装置可操作地相关联，以用储存器流体填充微通道并且保持微通道内的储存器流体的预定压力。

74. 发明申请

US20130257456A1 System and Method for Detecting Surface Charges of a MEMS Device 有权
标题翻译：用于检测MEMS器件表面电荷的系统和方法
公开(公告)号：US20130257456A1
公开(公告)日：2013-10-03
申请号：US13435236
申请日：2012-03-30
申请人： Fang Liu , Kuang L. Yang
发明人： Fang Liu , Kuang L. Yang
IPC分类号： G01R27/26
CPC分类号： B81B7/008 , B81B2207/03 , G01R29/24
摘要： A method for measuring retained surface charges within a MEMS device includes performing an initial voltage sweep on the MEMS device, and recording the capacitance between a first and second electrode of the MEMS device. The method may then (1) apply a stress signal to the MEMS device that causes a first and/or second electrode within the MES device to retain a surface charge, and (2) perform at least one additional voltage sweep on the MEMS device. The method may record the capacitance during the additional voltage sweep(s), and calculate a C-V center voltage shift based upon the data obtained during the initial voltage sweep and additional voltage sweep. The voltage shift is representative of the retained surface charge.
摘要翻译：用于测量MEMS器件内的保持的表面电荷的方法包括在MEMS器件上执行初始电压扫描，以及在MEMS器件的第一和第二电极之间记录电容。该方法可以（1）将应力信号施加到MEMS器件，其使MES器件内的第一和/或第二电极保持表面电荷，以及（2）在MEMS器件上执行至少一个额外的电压扫描。该方法可以在附加电压扫描期间记录电容，并且基于在初始电压扫描期间获得的数据和附加电压扫描来计算C-V中心电压偏移。电压偏移代表保留的表面电荷。

75. 发明申请

US20130032570A1 METHOD OF MANUFACTURING A SWITCH SYSTEM 有权
标题翻译：制造开关系统的方法
公开(公告)号：US20130032570A1
公开(公告)日：2013-02-07
申请号：US13195949
申请日：2011-08-02
申请人： John E. Rogers
发明人： John E. Rogers
IPC分类号： H05K3/46 , H01H11/00
CPC分类号： B81C1/00714 , B81B2201/014 , B81B2203/0109 , B81B2207/03 , B81B2207/99 , B81C1/00341 , B81C2201/0143 , B81C2203/037 , H01H1/0036 , H01H59/0009 , H01H2001/0073
摘要： A method for manufacturing a micro electro-mechanical system (MEMS) switch system (600, 700) includes etching each of a plurality of base circuit layers (425) and a plurality of passive component substrate layers (412, 418, 42, 426). The method continues with laser milling of a first dielectric film (406) to create a spacer layer (405). A metal cladding (402, 403) formed on a flexible dielectric film layer 404 is etched so as to form a plurality of switch component features. Further laser milling is performed with respect to the flexible dielectric film layer to form at least one switch structure (448, 450). Thereafter, a stack (400) is assembled which is comprised of the spacer layer disposed between the flexible dielectric film layer and the plurality of base circuit layers. Additional layers can also be included in the stack. When the stack is completed, heat and pressure are applied to join the various layers forming the stack.
摘要翻译：一种用于制造微机电系统（MEMS）开关系统（600,700）的方法包括蚀刻多个基极电路层（425）和多个无源部件衬底层（412,418,42,426）中的每一个，。该方法继续激光研磨第一介电膜（406）以产生间隔层（405）。形成在柔性电介质膜层404上的金属覆层（402,403）被蚀刻以形成多个开关元件特征。相对于柔性电介质膜层进行激光研磨以形成至少一个开关结构（448,450）。此后，组装叠层（400），其由设置在柔性电介质膜层和多个基极电路层之间的间隔层组成。堆栈中还可以包含附加层。当堆叠完成时，施加热和压力以连接形成堆叠的各种层。

76. 发明授权

US12129169B2 Semi-finished product of electronic device and electronic device 有权
公开(公告)号：US12129169B2
公开(公告)日：2024-10-29
申请号：US17535699
申请日：2021-11-26
申请人： Merry Electronics Co., Ltd.
发明人： Jen-Yi Chen , Yueh-Kang Lee , Kai-Yu Jiang
IPC分类号： B81B7/00 , B81C99/00
CPC分类号： B81C99/0045 , B81B7/0035 , B81B2207/03
摘要： Provided is a semi-finished product of an electronic device, including a substrate, a sensing module, and a lid. The substrate has a first surface and a second surface opposite to each other. The sensing module is disposed on the first surface. The lid is disposed on the first surface and forms a first cavity together with the substrate. An electronic device is also provided.

77. 发明公开

US20240343556A1 MICROMECHANICAL COMPONENT AND SCANNING DEVICE 审中-公开
公开(公告)号：US20240343556A1
公开(公告)日：2024-10-17
申请号：US18588988
申请日：2024-02-27
申请人： Robert Bosch GmbH
发明人： Helmut Grutzeck , Josip Mihaljevic , Philipp Matthias Roming , Udo Hartel
IPC分类号： B81B3/00 , G02B26/08
CPC分类号： B81B3/007 , G02B26/0833 , B81B2201/042 , B81B2207/015 , B81B2207/03 , B81B2207/07
摘要： A micromechanical component. The micromechanical component includes at least one adjustable part, a first holder for the adjustable part, and a first connecting structure. The first connecting structure is designed to connect the adjustable part to the first holder along a first axis of symmetry of the adjustable part, which runs perpendicular to an axis of rotation of the adjustable part. The micromechanical component further includes a first electrical conductor for detecting a breakage within the first connecting structure. The electrical conductor runs along the first connecting structure at least partially at an angle to the first axis of symmetry of the adjustable part.

78. 发明授权

US12075212B2 Method of electrical trimming of sensitivity and frequency response for piezoelectric MEMS 有权
公开(公告)号：US12075212B2
公开(公告)日：2024-08-27
申请号：US18162212
申请日：2023-01-31
申请人： Infineon Technologies AG
发明人： Christian Bretthauer , Andreas Bogner , Gabriele Bosetti , Niccoló De Milleri
IPC分类号： H04R17/10 , B81B7/00 , H04R3/00 , H04R7/06 , H04R17/02
CPC分类号： H04R17/10 , B81B7/008 , H04R3/00 , H04R7/06 , H04R17/02 , B81B2201/0257 , B81B2203/0127 , B81B2207/03 , H04R2201/003
摘要： A Micro-Electro-Mechanical System (MEMS) device comprises a piezoelectric transducer having a first frequency behavior, wherein the piezoelectric transducer comprises a piezoelectric trimming region, and control circuitry to provide a bias signal to the piezoelectric trimming region of the piezoelectric transducer for adjusting a second frequency behavior of the piezoelectric transducer.

79. 发明授权

US11932533B2 Signal processing circuit for triple-membrane MEMS device 有权
公开(公告)号：US11932533B2
公开(公告)日：2024-03-19
申请号：US17128638
申请日：2020-12-21
申请人： Infineon Technologies AG
发明人： Marc Fueldner , Andreas Wiesbauer , Athanasios Kollias
IPC分类号： B81C1/00 , B81B7/02
CPC分类号： B81C1/0023 , B81B7/02 , B81C1/00158 , B81C1/00182 , B81C1/00293 , B81B2201/0257 , B81B2203/0127 , B81B2207/012 , B81B2207/03 , B81C2201/0174 , B81C2203/0792
摘要： A triple-membrane MEMS device includes a first membrane, a second membrane and a third membrane spaced apart from one another, wherein the second membrane is between the first membrane and the third membrane, a sealed low pressure chamber between the first membrane and the third membrane, a first stator and a second stator in the sealed low pressure chamber, and a signal processing circuit configured to read-out output signals of the triple-membrane MEMS device.

80. 发明授权

US11916575B2 Digital microphone assembly with improved mismatch shaping 有权
公开(公告)号：US11916575B2
公开(公告)日：2024-02-27
申请号：US17139743
申请日：2020-12-31
申请人： Knowles Electronics, LLC
发明人： Mohammad Sadegh Mohammadi , Mohammad Shajaan
IPC分类号： H03M3/00 , B81B7/00 , H04R1/04 , H04R3/02 , H04R19/04
CPC分类号： H03M3/464 , B81B7/008 , H04R1/04 , H04R3/02 , H04R19/04 , B81B2201/0257 , B81B2207/03 , H04R2201/003
摘要： The present disclosure relates generally to digital microphone and other sensor assemblies including a transducer and a delta-sigma analog-to-digital converter (ADC) with digital-to-analog converter (DAC) element mismatch shaping and more particularly to sensor assemblies and electrical circuits therefor including a dynamic element matching (DELM) entity configured to select DAC elements based on data weighted averaging (DWA) and a randomized non-negative shift.

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