专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US07253017B1 Molding technique for fabrication of optoelectronic devices 有权
标题翻译：用于制造光电器件的成型技术
公开(公告)号：US07253017B1
公开(公告)日：2007-08-07
申请号：US10303665
申请日：2002-11-22
申请人： Martin R. Roscheisen , Brian M. Sager , Jacqueline Fidanza , Klaus Petritsch , Gregory A. Miller , Dong Yu
发明人： Martin R. Roscheisen , Brian M. Sager , Jacqueline Fidanza , Klaus Petritsch , Gregory A. Miller , Dong Yu
IPC分类号： H01L21/00
CPC分类号： B82Y30/00 , H01L31/0352 , H01L31/03529 , H01L51/0015 , H01L51/422 , H01L51/4253 , Y02E10/549
摘要： Charge splitting networks for optoelectronic devices may be fabricated using a nanostructured porous film, e.g., of SiO2, as a template. The porous film may be fabricated using surfactant temptation techniques. Any of a variety of semiconducting materials including semiconducting metals and metal oxides (such as TiO2, CdSe, CdS, CdTe, or CuO) may be deposited into the pores of the porous template film. After deposition, the template film may be removed by controlled exposure to acid or base without disrupting the semiconducting material leaving behind a nanoscale network grid. Spaces in the network grid can then be filled with complementary semiconducting material, e.g., a semiconducting polymer or dye to create a exciton-splitting and charge transporting network with superior optoelectronic properties for an optoelectronic devices, particularly photovoltaic devices.
摘要翻译：用于光电子器件的电荷分束网络可以使用纳米结构多孔膜（例如SiO 2）作为模板来制造。多孔膜可以使用表面活性剂诱导技术制造。包括半导体金属和金属氧化物（例如TiO 2，CdSe，CdS，CdTe或CuO）的各种半导体材料中的任何一种可以沉积到多孔模板膜的孔中。沉积后，可以通过控制暴露于酸或碱而不破坏半导体材料留下纳米尺度网格来除去模板膜。然后可以用互补半导体材料（例如半导体聚合物或染料）填充网格中的空间，以产生具有用于光电子器件，特别是光伏器件的优异光电子性质的激子分裂和电荷传输网络。

72. 发明申请

US20070163644A1 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material 失效
标题翻译：通过使用含硫属元素的蒸气和金属间材料对半导体前体层进行高通量打印
公开(公告)号：US20070163644A1
公开(公告)日：2007-07-19
申请号：US11395668
申请日：2006-03-30
申请人： Jeroen Van Duren , Matthew Robinson , Brian Sager
发明人： Jeroen Van Duren , Matthew Robinson , Brian Sager
IPC分类号： B05D3/00
CPC分类号： H01L31/0322 , C23C18/1204 , H01L31/02008 , H01L31/048 , H01L31/0749 , H01L31/18 , Y02E10/541
摘要： A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.
摘要翻译：公开了一种通过使用含硫属原子的蒸气形成半导体前体层的高通量方法。在一个实施方案中，该方法包括形成包含任何形状的IB族和/或IIIA族颗粒的前体材料。该方法可以包括在衬底的表面上形成前体材料的前体层。该方法还可以包括将基本上无氧的硫属元素气氛中的颗粒前体材料加热到足以使颗粒反应并从硫族化物颗粒中释放硫属元素的处理温度，其中硫族元素呈现液体形式并用作助熔剂以改善元素的混合以期望的化学计量比形成IB-IIIA族硫族化合物膜。硫属化合物气氛可以在处理温度下提供大于或等于前体层中液态硫属元素的蒸气压的分压。

73. 发明申请

US20070163642A1 High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles 审中-公开
标题翻译：半金属微片制品半导体前体层的高通量印刷
公开(公告)号：US20070163642A1
公开(公告)日：2007-07-19
申请号：US11395426
申请日：2006-03-30
申请人： Jeroen Van Duren , Matthew Robinson , Brian Sager
发明人： Jeroen Van Duren , Matthew Robinson , Brian Sager
IPC分类号： H01L31/00
CPC分类号： H01L31/0322 , C23C18/1229 , C23C18/127 , C23C18/1275 , C23C18/1283 , C23C18/14 , H01L31/06 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于从微片微粒高通量印刷半导体前体层的方法和装置。在一个实施方案中，该方法包括在合适的条件下，在合适的载体中转化非平面或平面前体材料，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在沉降之后。特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的微片。由微片形成的所得致密膜在形成光伏器件中特别有用。在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

74. 发明申请

US20070163383A1 High-throughput printing of nanostructured semiconductor precursor layer 审中-公开
标题翻译：纳米结构半导体前体层的高通量印刷
公开(公告)号：US20070163383A1
公开(公告)日：2007-07-19
申请号：US11361521
申请日：2006-02-23
申请人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
发明人： Jeroen Van Duren , Matthew Robinson , Craig Leidholm
IPC分类号： B22F1/00
CPC分类号： B22F9/04 , B22F1/0055 , B22F2009/041 , B22F2999/00 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1229 , C23C18/1241 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C24/10 , C23C26/00 , C23C26/02 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/18 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549 , Y02P70/521 , B22F2202/03
摘要： Materials and devices are provided for high-throughput printing of nanostructured semiconductor precursor layer. In one embodiment, a material is provided that comprises of a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA. The microflakes may be created by milling precursor particles characterized by a precursor composition that provides sufficient malleability to form a planar shape from a non-planar starting shape when milled, and wherein overall amounts of elements from Groups IB, IIIA and/or VIA contained in the precursor particles combined are at a desired stoichiometric ratio of the elements. It should also be understood that other flakes such as but not limited to nanoflakes may also be used to form the precursor material.
摘要翻译：提供材料和器件用于纳米结构半导体前体层的高通量打印。在一个实施方案中，提供了由多个微花瓣组成的材料，其具有含有IB，IIIA和/或VIA组中至少一种元素的材料组成。微花纹可以通过研磨特征在于前体组合物的前体颗粒来产生，前体组合物在研磨时提供足够的可延展性以从非平面起始形状形成平面形状，并且其中来自IB，IIIA和/或VIA组中的元素总量组合的前体颗粒具有所需元素的化学计量比。还应当理解，也可以使用其它片，例如但不限于纳米片，以形成前体材料。

75. 发明授权

US07122398B1 Manufacturing of optoelectronic devices 有权
标题翻译：制造光电器件
公开(公告)号：US07122398B1
公开(公告)日：2006-10-17
申请号：US10810072
申请日：2004-03-25
申请人： Karl Pichler
发明人： Karl Pichler
IPC分类号： H01L21/00 , H01L31/042
CPC分类号： H01L31/1876 , H01L31/02167 , H01L31/0445 , H01L31/0475 , H01L31/0504 , H01L31/0508 , Y02E10/50 , Y02P70/521
摘要： A method for manufacturing optoelectronic devices is disclosed. A layered structure may be formed with a plurality of layers including a bottom electrode layer, a top electrode layer, and one or more active layers between the top and bottom electrode layers. The layered structure is divided into one or more separate device module sections by cutting through one or more of the layers of the layered structure. At least one of the layers is an unpatterned layer at the time of cutting. Each of the resulting device module sections generally includes a portion of the active layer disposed between portions of the top and bottom electrode layers. An edge of a device section may optionally be protected against undesired electrical contact between two or more of the bottom electrode, top electrode and active layer portions. Two or more device module sections may be assembled into a device and connected in series by electrically connecting the bottom electrode layer portion of one device section to the top electrode layer portion of another device module section.
摘要翻译：公开了一种制造光电器件的方法。层状结构可以形成有包括底电极层，顶电极层和顶电极层和底电极层之间的一个或多个有源层的多个层。通过切割分层结构的一个或多个层，分层结构被分成一个或多个单独的设备模块部分。在切割时，至少一层是无图案层。每个所得到的器件模块部分通常包括设置在顶部和底部电极层的部分之间的有源层的一部分。设备部分的边缘可以可选地被保护以防止底部电极，顶部电极和有源层部分中的两个或更多个之间的不期望的电接触。两个或多个器件模块部分可以组装成器件并且通过将一个器件部分的底部电极层部分电连接到另一个器件模块部分的顶部电极层部分而串联连接。

76. 发明申请

US20060060237A1 Formation of solar cells on foil substrates 审中-公开
标题翻译：在箔基板上形成太阳能电池
公开(公告)号：US20060060237A1
公开(公告)日：2006-03-23
申请号：US10943685
申请日：2004-09-18
申请人： Craig Leidholm , Brent Bollman
发明人： Craig Leidholm , Brent Bollman
IPC分类号： H01L31/00
CPC分类号： H01L31/0322 , H01L31/03928 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200° C. and about 600° C. and maintained in the average plateau temperature range 2 to 30 minutes after which the temperature is reduced.
摘要翻译：光电器件的吸收层可以形成在铝或金属化的聚合物箔基底上。在衬底上形成包含IB族元素和IIIA族元素的初生吸收层。然后将新生吸收剂层和/或基底从环境温度快速加热至约200℃至约600℃的平均平台温度范围，并保持在平均平台温度范围2至30分钟之后，温度降低。

77. 发明申请

US20050186342A1 Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment 有权
标题翻译：使用原子层沉积和高通量表面处理形成CIGS吸收层材料
公开(公告)号：US20050186342A1
公开(公告)日：2005-08-25
申请号：US10943658
申请日：2004-09-18
申请人： Brian Sager , Martin Roscheisen , Craig Leidholm
发明人： Brian Sager , Martin Roscheisen , Craig Leidholm
IPC分类号： B05D3/12 , C23C16/00 , C23C16/40 , C23C16/455 , C23C16/458 , C23C16/54
CPC分类号： C23C16/45544 , C23C16/405 , C23C16/458 , C23C16/4581 , C23C16/545 , C25D7/0614 , C25D17/02 , H01L31/022425 , H01L31/0322 , H01L31/0392 , H01L31/03926 , H01L31/1864 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： An absorber layer may be formed on on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
摘要翻译：可以使用原子层沉积反应在基板上形成吸收层。包含IB，IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成，以形成一个电影。然后将VIA族元素并入膜中并退火以形成吸收层。吸收层可以大于约25nm厚。衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。

78. 发明申请

US20050183767A1 Solution-based fabrication of photovoltaic cell 失效
标题翻译：光伏电池基于解决方案的制造
公开(公告)号：US20050183767A1
公开(公告)日：2005-08-25
申请号：US10782017
申请日：2004-02-19
申请人： Dong Yu , Jacqueline Fidanza , Martin Roscheisen , Brian Sager
发明人： Dong Yu , Jacqueline Fidanza , Martin Roscheisen , Brian Sager
IPC分类号： A61K9/16 , A61K9/50 , B82B3/00 , H01L21/00 , H01L31/00 , H01L31/0256 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/1295 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
摘要翻译：公开了一种用于形成CIGS光伏电池有源层的墨水以及用于制造墨水的方法，制备活性层的方法和由活性层制成的太阳能电池。油墨含有IB，IIIA和（任选地）VIA组分的纳米颗粒的混合物。颗粒的直径在约1nm至约500nm之间的所需粒度范围，其中大部分颗粒的质量包括尺寸不超过平均粒度的约40％或以下的颗粒，或如果平均粒度小于约5纳米，高于或低于平均粒度的不超过约2纳米。使用这种墨水避免了在构建光伏电池期间将材料暴露于H 2 S 2 Se气体，并且允许在膜退火期间更均匀的熔融，更均匀的纳米颗粒的混合，并且允许更高的要形成的质量吸收膜。

79. 发明申请

US20140224312A1 DEPOSITION OF A HIGH SURFACE ENERGY THIN FILM LAYER FOR IMPROVED ADHESION OF GROUP I-III-VI2 SOLAR CELLS 审中-公开
标题翻译：用于改善组I-III-VI2太阳能电池的粘附的高表面能量薄膜层的沉积
公开(公告)号：US20140224312A1
公开(公告)日：2014-08-14
申请号：US13766712
申请日：2013-02-13
申请人： Gregory Brown , Gregory Kimball , Peter Stone
发明人： Gregory Brown , Gregory Kimball , Peter Stone
IPC分类号： H01L31/0216
CPC分类号： H01L21/02568 , H01L21/0237 , H01L21/02425 , H01L21/02491 , H01L21/02505 , H01L21/02614 , H01L21/02628 , H01L31/022425 , H01L31/0322 , H01L31/03928 , H01L31/0749 , Y02E10/541
摘要： A thin film photovoltaic cell includes a light absorption layer of Group I-III-VI2 semiconductor materials and a high surface energy thin film layer that improves adhesion between the light absorption layer and an underlying electrode layer. The high surface energy thin film either replaces or is deposited on top of the back electrode to decrease the formation of voids at the back interface during absorber growth/deposition and thereby enabling a wider process window and improved cell efficiencies. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：薄膜光伏电池包括I-III-VI2族半导体材料的光吸收层和改善光吸收层和下层电极层之间的粘附性的高表面能薄膜层。高表面能薄膜取代或沉积在背电极的顶部，以减少在吸收体生长/沉积期间在后界面处的空隙的形成，从而实现更宽的工艺窗口和改进的电池效率。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

80. 发明授权

US08617640B2 Thin-film devices formed from solid group IIIA alloy particles 失效
标题翻译：由固体IIIA族合金颗粒形成的薄膜器件
公开(公告)号：US08617640B2
公开(公告)日：2013-12-31
申请号：US11762056
申请日：2007-06-12
申请人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
发明人： Matthew R. Robinson , Chris Eberspacher , Jeroen K. J. Van Duren
IPC分类号： B05D5/06
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for creating solid alloy particles. The method may include providing a first material containing at least one alloy comprising of: a) a group IIIA element, b) at least one group IB, IIIA, and/or VIA element different from the group IIIA element of a), and c) a group IA-based material. The group IA-based material may be included in an amount sufficient so that no liquid phase of the alloy is present in a temperature range between room temperature and a deposition temperature higher than room temperature, wherein the group IIIA element is otherwise liquid in that temperature range. The method may involve formulating a precursor material comprising of: a) particles of the first material and b) particles containing at least one element from one of the following: a group IB element, a group IIIA element, a group VIA element, alloys containing any of the foregoing elements, or combinations thereof.
摘要翻译：提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。在一个实施例中，提供了一种用于产生固体合金颗粒的方法。该方法可以包括提供包含至少一种合金的第一材料，其包含：a）IIIA族元素，b）至少一种不同于a）的IIIA族元素的IB，IIIA和/或VIA元素，c ）一组基于IA的材料。基于IA族的材料可以包括足够的量，使得在室温和高于室温的沉积温度之间的温度范围内不存在合金的液相，其中IIIA族元素在该温度下为液体范围。该方法可以包括配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，如下列之一：IB族元素，IIIA族元素，VIA族元素，含任何上述要素，或其组合。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式