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    • 78. 发明授权
    • Scanning projectors that use guard bands to reduce color shifts, and methods and controllers for use therewith
    • 扫描使用保护带以减少颜色偏移的投影机,以及与其一起使用的方法和控制器
    • US09503701B2
    • 2016-11-22
    • US14798259
    • 2015-07-13
    • Intersil Americas LLC
    • Akihiro Asada
    • H04N9/12H04N9/31
    • H04N9/3182H04N9/3135H04N9/3164H04N9/3194
    • A scanning projector system includes a controller, a driver and one or more micro-mirror(s). The controller produces first, second and third pixel data in dependence on a video signal. The driver drives first, second and third light emitting elements in dependence on the first, second and third pixel data produced by the controller, to thereby emit light of first, second and third colors. The micro-mirror(s) project an image in dependence on light beams produced in dependence on the light of the first, second and third colors. To reduce color shifts due to inter-pixel interference, the controller and/or driver causes at least one timing guard band per pixel period associated with each instance of the pixel data.
    • 扫描投影仪系统包括控制器,驱动器和一个或多个微镜。 控制器根据视频信号产生第一,第二和第三像素数据。 驱动器根据由控制器产生的第一,第二和第三像素数据驱动第一,第二和第三发光元件,从而发射第一,第二和第三颜色的光。 微镜根据根据第一,第二和第三颜色的光产生的光束投影图像。 为了减少由于像素间干扰引起的颜色偏移,控制器和/或驱动器在与像素数据的每个实例相关联的每个像素周期引起至少一个定时保护带。
    • 79. 发明申请
    • OPTOELECTRONIC DEVICE PACKAGES
    • 光电器件封装
    • US20160306072A1
    • 2016-10-20
    • US15055852
    • 2016-02-29
    • Intersil Americas LLC
    • Sri Ganesh A Tharumalingam
    • G01V8/12
    • G01V8/12H01L24/94H01L24/97H01L25/167H01L31/167H01L31/186H01L2224/48091H01L2224/48145H01L2924/181H01L2924/00012H01L2924/00014
    • An optical proximity sensor comprises a light detector die including a light detector sensor area and at least one bond pad on a portion of the light detector die not including the light detector sensor area. A light source die, including anode and cathode terminals, is attached to a portion of the light detector die not including the light detector sensor area, such that at least one of the terminals of the light source die, on a bottom of the light source die, is attached to at least one of the bond pads on the light detector die. An opaque barrier, formed off-wafer relative to a wafer including the light detector die, is attached to and extends upward from a top surface of the light detector die between the light detector sensor area and the light source die. Electrical connectors are on the bottom of the light detector die.
    • 光学接近传感器包括光检测器管芯,其包括光检测器传感器区域和不包括光检测器传感器区域的光检测器管芯的一部分上的至少一个接合焊盘。 包括阳极和阴极端子的光源管芯连接到不包括光检测器传感器区域的光检测器管芯的一部分,使得光源的至少一个端子在光源的底部 模具附接到光检测器裸片上的至少一个接合焊盘。 相对于包括光检测器裸片的晶片而在晶片外形成的不透明屏障附着到光检测器芯片的光表面和光源管芯之间并从光检测器管芯的上表面向上延伸。 电连接器位于光检测器模具的底部。
    • 80. 发明授权
    • Semiconductor structures for enhanced transient response in low dropout (LDO) voltage regulators
    • 用于在低压差(LDO)稳压器中增强瞬态响应的半导体结构
    • US09383618B2
    • 2016-07-05
    • US14336870
    • 2014-07-21
    • INTERSIL AMERICAS LLC
    • Gwilym Luff
    • G05F3/02G02F1/1368G05F1/56
    • G02F1/1368G05F1/56G09G3/3696
    • Systems, semiconductor structures, electronic circuits and methods for enhanced transient response in Low Dropout (LDO) voltage regulators are disclosed. For example, a semiconductor structure for enhanced transient response in an LDO voltage regulator is disclosed, which includes a first current mirror circuit coupled to an input connection and an output connection of the LDO voltage regulator, a second current mirror circuit coupled to the input connection of the LDO voltage regulator. A first input of a first amplifier circuit is coupled to the second current mirror circuit, a second input of the first amplifier circuit is coupled to the output connection of the LDO voltage regulator, and a third input of the first amplifier circuit is coupled to a reference voltage. An input of a second amplifier circuit is coupled to an output of the first amplifier circuit, an output of the second amplifier circuit is coupled to the first current mirror circuit, an input of a third amplifier circuit is coupled to the output of the first amplifier circuit, and an output of the third amplifier circuit is coupled to the second current mirror circuit. In some implementations, the semiconductor structure is an adaptively-biased LDO voltage regulator formed in a power management integrated circuit (PMIC) or in a power supply on a semiconductor IC, wafer, chip or die.
    • 公开了用于增强低压差(LDO)稳压器中的瞬态响应的系统,半导体结构,电子电路和方法。 例如,公开了一种用于LDO稳压器中的增强的瞬态响应的半导体结构,其包括耦合到LDO电压调节器的输入连接和输出连接的第一电流镜电路,耦合到输入连接的第二电流镜电路 的LDO稳压器。 第一放大器电路的第一输入耦合到第二电流镜电路,第一放大器电路的第二输入耦合到LDO电压调节器的输出连接,并且第一放大器电路的第三输入耦合到 参考电压。 第二放大器电路的输入耦合到第一放大器电路的输出,第二放大器电路的输出耦合到第一电流镜电路,第三放大器电路的输入耦合到第一放大器的输出端 电路,并且第三放大器电路的输出耦合到第二电流镜电路。 在一些实施方案中,半导体结构是形成在功率管理集成电路(PMIC)中或在半导体IC,晶片,芯片或管芯上的电源中形成的自适应偏置LDO电压调节器。