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71. 发明申请

US20080302767A1 Plasma Cutting Machine 审中-公开
标题翻译：等离子切割机
公开(公告)号：US20080302767A1
公开(公告)日：2008-12-11
申请号：US11631513
申请日：2005-06-02
申请人： Yoshihiro Yamaguchi , Kazuhiro Kuraoka
发明人： Yoshihiro Yamaguchi , Kazuhiro Kuraoka
IPC分类号： B23K10/00
CPC分类号： B23K10/006 , B23K10/00 , B23K2103/05
摘要： A plasma cutting machine cuts stainless steel with good quality. An inactive gas (nitrogen) is supplied as a plasma gas, and a combustible gas (propane) having a specific gravity higher than that of air and having a reducing ability or a mixed gas of the combustible gas (propane) and an inactive gas (nitrogen) is supplied as an assist gas to a plasma torch. The combustible gas (propane) contained in the assist gas is not supplied in the pre-flow interval and after-flow interval, and is supplied only in the plasma arc generation interval.
摘要翻译：等离子切割机切割不锈钢质量好。将惰性气体（氮气）作为等离子体气体供给，并且具有比空气的比重高且具有还原能力的可燃气体（丙烷）或可燃气体（丙烷）和惰性气体（丙烷）的混合气体氮气）作为辅助气体供给到等离子体焰炬。包含在辅助气体中的可燃性气体（丙烷）不是在预流量间隔和流量间隔中供给的，仅在等离子体电弧产生间隔中供给。

72. 发明申请

US20080283909A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080283909A1
公开(公告)日：2008-11-20
申请号：US12122165
申请日：2008-05-16
申请人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/66734
摘要： A semiconductor device includes a second-conductivity-type base region provided on a first-conductivity-type semiconductor layer, a first-conductivity-type source region provided on the second-conductivity-type base region, a gate insulating film covering an inner wall of a trench which passes through the second-conductivity-type base region and reaching the first-conductivity-type semiconductor layer, a gate electrode buried in the trench via the gate insulating film, and a second-conductivity-type region being adjacent to the second-conductivity-type base region below the first-conductivity-type source region, spaced from the gate insulating film, and having a higher impurity concentration than the second-conductivity-type base region. c≧d is satisfied, where d is a depth from an upper surface of the first-conductivity-type source region to a lower end of the gate electrode, and c is a depth from an upper surface of the first-conductivity-type source region to a lower surface of the second-conductivity-type base region.
摘要翻译：半导体器件包括设置在第一导电型半导体层上的第二导电型基极区域，设置在第二导电型基极区域上的第一导电型源极区域，覆盖内壁的栅极绝缘膜通过所述第二导电型基极区域并到达所述第一导电型半导体层的沟槽，经由所述栅极绝缘膜埋设在所述沟槽中的栅电极，以及与所述第二导电型基极区相邻的第二导电型区域与第一导电型源极区域相邻的第二导电型基极区域，与栅极绝缘膜间隔开，并且具有比第二导电型基极区域更高的杂质浓度。 c> = d，其中d是从第一导电型源极区域的上表面到栅极电极的下端的深度，c是从第一导电型源极区域的上表面开始的深度源极区域延伸到第二导电型基极区域的下表面。

73. 外观设计

USD580960S1 Nozzle for plasma cutting machine 有权
公开(公告)号：USD580960S1
公开(公告)日：2008-11-18
申请号：US29300890
申请日：2008-05-27
申请人： Yoshihiro Yamaguchi , Kazuhiro Kuraoka
设计人： Yoshihiro Yamaguchi , Kazuhiro Kuraoka

74. 发明授权

US07385597B2 Information processing device with rotatable screen and external input device 有权
标题翻译：具有可旋转屏幕和外部输入设备的信息处理设备
公开(公告)号：US07385597B2
公开(公告)日：2008-06-10
申请号：US09944080
申请日：2001-09-04
申请人： Junko Fukuda , Yoshihiro Yamaguchi , Keigo Ihara , Takanori Nishimura
发明人： Junko Fukuda , Yoshihiro Yamaguchi , Keigo Ihara , Takanori Nishimura
IPC分类号： G06F3/033
CPC分类号： G06F1/169 , G06F1/1616 , G06F1/162 , G06F1/1671 , G06F1/1677 , G06F1/1686 , H04N7/147
摘要： In an information processing device, system operations can be simply performed while a screen of a display body is viewed, even when the display body is folded against a main body. In the information processing device, a display body with a screen arranged on the front surface is connected to a main body having a keyboard mounted thereon so as to rotate in opening/folding directions and in a turning direction, and an operating button is positioned to be operable when the back surface of the display body is close to the main body. Also, a system menu is displayed on the screen according to operation of the operating button.
摘要翻译：在信息处理装置中，即使当显示体折叠主体时，也可以简单地进行系统操作，同时观看显示体的屏幕。在信息处理装置中，具有布置在前表面上的屏幕的显示体连接到具有安装在其上的键盘的主体，以便在打开/折叠方向和转动方向上旋转，并且操作按钮被定位成当显示体的后表面靠近主体时可操作。此外，根据操作按钮的操作，屏幕上显示系统菜单。

75. 发明申请

US20080093346A1 Plasma cutting device, plasma torch, and cooling device for plasma torch 有权
标题翻译：等离子切割装置，等离子体焰炬和等离子体焰炬的冷却装置
公开(公告)号：US20080093346A1
公开(公告)日：2008-04-24
申请号：US11907299
申请日：2007-10-11
申请人： Yoshihiro Yamaguchi , Shigeo Morimoto , Mikio Minonishi
发明人： Yoshihiro Yamaguchi , Shigeo Morimoto , Mikio Minonishi
IPC分类号： H05H1/28 , B23K9/24
CPC分类号： H05H1/34 , H05H1/28 , H05H2001/3442 , H05H2001/3457 , H05H2001/3484
摘要： In order to increase the flow rate of coolant liquid supplied to the nozzle (88) of a plasma torch (10) and to extend the life of the plasma torch (10), within the plasma torch (10), an electrode coolant liquid passage (60, 84, 85, 86, and 64 which supplies coolant liquid to an electrode (80), and a nozzle coolant liquid passage (56, 70, 92, 72 and 68) which supplies coolant liquid to the nozzle (88), are provided separately as independent coolant liquid passages which extend in parallel, and which are mutually electrically insulated from one another. Moreover, the flow rate of coolant liquid in the nozzle coolant liquid passage is greater than the flow rate of coolant liquid in the electrode coolant liquid passage.
摘要翻译：为了增加供应到等离子体焰炬（10）的喷嘴（88）的冷却剂液体的流量并延长等离子体焰炬（10）的寿命，等离子体焰炬（10）内的电极冷却剂液体通道（60,84,85,86和64），其将冷却剂液体供应到电极（80）;以及喷嘴冷却剂液体通道（56,70,92,72和68），其将冷却剂液体供应到喷嘴（88），独立地设置为独立的冷却剂液体通道，它们彼此平行延伸并且彼此相互电绝缘，此外，喷嘴冷却剂液体通道中的冷却剂液体的流量大于电极冷却剂中的冷却剂液体的流量液体通道

76. 发明申请

US20080029489A1 Thermal Cutting Machine And Thermal Cutting Method 失效
标题翻译：热切割机和热切割方法
公开(公告)号：US20080029489A1
公开(公告)日：2008-02-07
申请号：US11629283
申请日：2005-06-05
申请人： Satoshi Ohnishi , Yoshihiro Yamaguchi
发明人： Satoshi Ohnishi , Yoshihiro Yamaguchi
IPC分类号： B23K28/00 , B21J13/08
CPC分类号： B23K37/0408 , B23K7/002 , B23K10/00 , B23K26/0884 , B23K26/16 , B23K26/38 , B23K26/702 , B23K37/0461 , B23K2101/18
摘要： A lattice pallet 13 having a large number of supporters for placing a plate 14 is installed to a table 12 so as to be freely fittable and removable. Bringing in of the plate 14 is performed by the method of raising the lattice pallet 13 with a crane with the plate 14 already having been loaded upon the lattice pallet 13 in a different location, transporting them over the table 12, and lowering them down onto the table 12. Directly after cutting has been completed, the lattice pallet 12 is raised and separated from the table 12 with the manufactured product and the left over material carried upon it and is taken away to a different location, and another lattice pallet 13 with another plate 14 mounted upon it is brought in with the crane upon the table 12, and the task of cutting this other plate 14 is commenced.
摘要翻译：具有用于放置板14的大量支撑器的格子托盘13被安装到桌子12上，以便可自由地装配和拆卸。通过用起重机提升格子托盘13的方法来进行板14的进入，该起重机已将板14已经装载在不同位置的格子托盘13上，将它们运送到工作台12上，并将它们下降到桌子12.切割完成之后，格子托盘12被升起并与工作台12分离，制成品并将剩下的材料运送到其上并被带走到不同的位置，另一个格子托盘13具有安装在其上的另一个板14与起重机一起被放置在工作台12上，并且开始切割另一个板14的任务。

77. 发明申请

US20080012943A1 IMAGE PROCESSING SYSTEM, IMAGE CAPTURING APPARATUS, IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND COMPUTER-READABLE MEDIUM STORING PROGRAM 有权
标题翻译：图像处理系统，图像捕获设备，图像处理设备，图像处理方法和计算机可读介质存储程序
公开(公告)号：US20080012943A1
公开(公告)日：2008-01-17
申请号：US11774363
申请日：2007-07-06
申请人： Mikio Watanabe , Koichi Sakamoto , Hisayoshi Tsubaki , Yoshihiro Yamaguchi
发明人： Mikio Watanabe , Koichi Sakamoto , Hisayoshi Tsubaki , Yoshihiro Yamaguchi
IPC分类号： H04N5/225
CPC分类号： H04N1/00137 , H04N1/00127 , H04N1/00132 , H04N1/00167 , H04N1/00172 , H04N1/00188 , H04N1/00204 , H04N1/00278 , H04N2101/00 , H04N2201/3225 , H04N2201/3252 , H04N2201/3278
摘要： An image processing system includes: an image capturing apparatus for obtaining an image of a subject, having a setting unit, which sets an obtaining condition for the image according to user's operation, and an outputting unit, which outputs the obtaining condition in association with the image; and an image processing apparatus for performing an image processing for the image, having a receiving unit, which receives the image and the obtaining condition, an image processing unit, which performs an image processing for the image, and a controlling unit, which controls the image processing unit based on the obtaining conditions.
摘要翻译：一种图像处理系统包括：用于获得被摄体图像的图像捕获装置，具有设置单元，该设置单元根据用户的操作设置图像的获得条件;以及输出单元，其输出与图片; 以及图像处理装置，用于对图像执行图像处理，具有接收图像和获得条件的接收单元，执行图像的图像处理的图像处理单元，以及控制单元，基于获得条件的图像处理单元。

78. 发明授权

US07087855B2 Plasma cutting apparatus and control unit thereof 有权
标题翻译：等离子切割装置及其控制单元
公开(公告)号：US07087855B2
公开(公告)日：2006-08-08
申请号：US10840676
申请日：2004-05-07
申请人： Yoshihiro Yamaguchi , Tetsuya Kabata
发明人： Yoshihiro Yamaguchi , Tetsuya Kabata
IPC分类号： B23K10/00
CPC分类号： B23K10/006 , B23K10/00
摘要： Cutting quality of the product, in particular, hole cutting quality, in plasma arc cutting is improved. A control unit, which controls a plasma cutting apparatus for cutting a product from a plate material by moving a plasma torch at a cutting speed along a cutting path corresponding to the product shape to cut the plate material, while supplying an arc current and a plasma gas to the plasma torch and forming a plasma arc from a nozzle of the plasma torch to the plate material, conducts control so that, when a hole is cut, a cutting speed is lower, a value of the arc current value is smaller, and a plasma gas flow rate or pressure is less than those when a contour is cut.
摘要翻译：提高了等离子弧切割中产品的切割质量，特别是切孔质量。控制单元，其控制等离子体切割设备，用于通过沿着与产品形状相对应的切割路径以切割速度移动等离子体焰炬来切割板材，同时提供电弧电流和等离子体从等离子体焰炬的喷嘴向板材形成等离子弧的气体进行控制，使得当切割孔时切割速度较低，电弧电流值的值较小，等离子体气体流量或压力小于切割轮廓时的流量或压力。

79. 发明申请

US20060151805A1 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US20060151805A1
公开(公告)日：2006-07-13
申请号：US11194593
申请日：2005-08-02
申请人： Kenji Oota , Yoshihiro Yamaguchi , Hiroshi Yamaguchi
发明人： Kenji Oota , Yoshihiro Yamaguchi , Hiroshi Yamaguchi
IPC分类号： H01L29/45 , H01L29/76
CPC分类号： H01L29/0661 , H01L29/0619 , H01L29/0834 , H01L29/74
摘要： A power semiconductor device comprises a semiconductor substrate, a gate electrode region (control electrode region), a cathode electrode region (first main electrode region), an anode electrode region (second main electrode region) and a guard ring. The semiconductor substrate has a side surface portion having a vertical portion formed substantially vertical to a main surface and a mesa portion connected to the vertical portion in a cross section. The gate electrode region is formed in a first main surface of the semiconductor substrate. The cathode electrode region is formed in part of a surface of the gate electrode region. The anode electrode region is formed in a second main surface of the semiconductor substrate. The guard ring is formed in the second main surface of the semiconductor substrate and annularly surrounds the anode electrode region. With this constitution provided is a power semiconductor device which makes the impurity diffusion length of the anode electrode region shallower in order to ensure reduction in recovery loss.
摘要翻译：功率半导体器件包括半导体衬底，栅电极区域（控制电极区域），阴极电极区域（第一主电极区域），阳极电极区域（第二主电极区域）和保护环。半导体衬底具有侧表面部分，该侧表面部分具有基本上垂直于主表面的垂直部分和在横截面中连接到垂直部分的台面部分。栅电极区域形成在半导体衬底的第一主表面中。阴极电极区域形成在栅电极区域的一部分表面。阳极电极区域形成在半导体衬底的第二主表面中。保护环形成在半导体衬底的第二主表面中并且环形地围绕阳极电极区域。通过这样构成，为了确保降低回收损失，能够使阳极电极区域的杂质扩散长度变浅的功率半导体装置。

80. 发明授权

US06977414B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06977414B2
公开(公告)日：2005-12-20
申请号：US10460407
申请日：2003-06-13
申请人： Kazutoshi Nakamura , Yoshihiro Yamaguchi , Yusuke Kawaguchi , Syotaro Ono , Akio Nakagawa
发明人： Kazutoshi Nakamura , Yoshihiro Yamaguchi , Yusuke Kawaguchi , Syotaro Ono , Akio Nakagawa
IPC分类号： H01L21/285 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/78 , H01L29/76
CPC分类号： H01L29/7816 , H01L21/28537 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7809
摘要： A semiconductor device comprises: a semiconductor layer of a first conductivity type; a pair of base regions of a second conductivity type selectively provided on a surface of the semiconductor layer; and source regions of a first conductivity type, each of the source regions being selectively provided on a surface of each of the base regions. The semiconductor device further comprises an electrical field reducing region of a second conductivity type selectively provided on the surface of the semiconductor layer between the pair of the base regions; a gate insulating film provided on the surface of the base regions; a pair of gate electrodes provided on the gate insulating film, each of the gate electrodes being provided on the surface of the base regions between the source region and the electrical field reducing region; and a source electrode connected to the source regions. The electrical field reducing region is isolated from both of the gate electrode and the source electrode.
摘要翻译：半导体器件包括：第一导电类型的半导体层; 选择性地设置在半导体层的表面上的一对第二导电类型的基极区; 以及第一导电类型的源极区域，每个源区域选择性地设置在每个基极区域的表面上。所述半导体器件还包括选择性地设置在所述一对基极区域之间的所述半导体层的表面上的第二导电类型的电场减小区域; 设置在所述基底区域的表面上的栅极绝缘膜; 设置在所述栅极绝缘膜上的一对栅电极，在所述源极区域和所述电场减少区域之间的所述基极区域的表面上设置各栅极电极; 以及与源极区域连接的源电极。电场减少区域与栅极电极和源极电极隔离。

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