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    • 71. 发明授权
    • Active matrix substrate having interleaved source and drain electrodes on circle semiconductor and display device including same
    • 有源矩阵基板在圆形半导体上具有交错的源极和漏极,并且包括它的显示器件
    • US08077266B2
    • 2011-12-13
    • US10935117
    • 2004-09-08
    • Kenji NakamuraYoshihiro Okada
    • Kenji NakamuraYoshihiro Okada
    • G02F1/136G09G3/38H01L29/04
    • H01L29/78696G02F1/1368H01L27/016H01L27/12H01L27/3244H01L29/41733H01L29/42384
    • An active matrix includes (i) a thin film transistor including a semiconductor layer formed above a gate electrode, a source electrode, and a drain electrode, the source electrode and the drain electrode formed to overlap with the semiconductor layer; and (ii) a pixel electrode connected to the drain electrode, a pixel electrode connected to the drain electrode, the drain electrode extended from the pixel electrode into a drain electrode formation region located to be kept within a semiconductor layer formation region, the drain electrode formation region sandwiched between two portions of the source electrode. With this arrangement, even when the semiconductor layers in the TFTs (thin film transistors) have unevenness in sizes, shapes, and/or formation positions thereof, it is possible to prevent occurrence of unevenness (changes) in gate-drain capacitances cgd among the TFTs. Thereby, it is possible to provide an active matrix substrate having a high display characteristic.
    • 有源矩阵包括(i)薄膜晶体管,其包括形成在栅电极,源电极和漏电极之上的半导体层,所述源电极和漏极形成为与半导体层重叠; 连接到漏电极的像素电极,连接到漏电极的像素电极,从像素电极延伸到位于半导体层形成区域内的漏电极形成区域的漏电极,漏电极 形成区域夹在源电极的两个部分之间。 通过这种布置,即使当TFT(薄膜晶体管)中的半导体层的尺寸,形状和/或形成位置不均匀时,也可以防止栅极 - 漏极间电容cgd的不均匀性(变化) TFT。 由此,能够提供具有高显示特性的有源矩阵基板。
    • 74. 发明申请
    • Active matrix substrate, method of making the substrate, and display device
    • 有源矩阵基板,制造基板的方法和显示装置
    • US20110003417A1
    • 2011-01-06
    • US12807215
    • 2010-08-31
    • Yoshihiro OkadaYuichi SaitoShinya YamakawaAtsushi BanMasaya OkamotoHiroyuki Ohgami
    • Yoshihiro OkadaYuichi SaitoShinya YamakawaAtsushi BanMasaya OkamotoHiroyuki Ohgami
    • H01L21/336H01L33/02
    • H01L29/78603G02F1/1362H01L27/124H01L27/1288H01L29/66765
    • An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.
    • 有源矩阵基板包括基底,栅线,数据线,薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线与绝缘膜相交,跨越所有栅极线。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联,并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联,并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉,而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。
    • 75. 发明授权
    • Active matrix substrate and display unit provided with it
    • 提供有源矩阵基板和显示单元
    • US07864281B2
    • 2011-01-04
    • US11574087
    • 2005-08-23
    • Wataru NakamuraAtsushi BanShoji OkazakiHiromitsu KatsuiYoshihiro Okada
    • Wataru NakamuraAtsushi BanShoji OkazakiHiromitsu KatsuiYoshihiro Okada
    • G02F1/1333
    • G02F1/136227G02F1/136286
    • An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.
    • 有源矩阵基板包括基板; 形成在基板上的扫描线; 覆盖扫描线的绝缘膜; 经由绝缘膜与扫描线相交的信号线; 形成在基板上的开关元件,每个开关元件响应于施加到相应扫描线的信号而工作; 以及各自能够经由开关元件电连接到对应的信号线的像素电极。 绝缘膜是包括第一绝缘层和第二绝缘层的多层绝缘膜。 第一绝缘层由含有有机成分的绝缘材料形成,并且多层绝缘膜在与开关元件重叠的区域的至少一部分中具有低堆叠区域,第一绝缘层不形成在低电压 堆栈区域。 有源矩阵基板减少了在扫描线和信号线之间的每个交叉点处形成的电容,而不会导致布线电阻的增加或开关元件的驱动能力的劣化。
    • 78. 发明授权
    • Image detection device
    • 图像检测装置
    • US07804071B2
    • 2010-09-28
    • US12219634
    • 2008-07-25
    • Yoshihiro Okada
    • Yoshihiro Okada
    • H01L27/146
    • G01T1/2928G01T1/241G01T1/244
    • An image detection device includes a sensor panel and a light. The sensor panel includes a semiconductor layer, which is formed on a substrate formed of a member having a light transmitting property and generates charges in response to X-rays radiated thereto, two pairs of electrodes each pair disposed in confrontation with each other, and a plurality of accumulating portions formed between the semiconductor layer and the substrate to accumulate the charges generated to the semiconductor layer as the information of the pixels constituting an image. The light radiates light to the surface of the sensor panel on the substrate side thereof. The respective electrodes of the accumulating portions are formed so that light having at least a predetermined intensity is radiated from the light to the regions of the semiconductor layer where the accumulating portions are formed.
    • 图像检测装置包括传感器面板和光。 传感器面板包括半导体层,该半导体层形成在由具有透光性的构件形成的基板上,并且响应于辐射的X射线而产生电荷,两对电极彼此对置设置, 形成在半导体层和基板之间的多个累积部分,以累积产生到半导体层的电荷作为构成图像的像素的信息。 光将光照射到传感器面板的基板侧的表面。 蓄积部的各个电极形成为使得至少具有预定强度的光从光辐射到形成有积聚部分的半导体层的区域。