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    • 71. 发明授权
    • Nonvolatile semiconductor memory device and method of manufacturing the same
    • 非易失性半导体存储器件及其制造方法
    • US08569133B2
    • 2013-10-29
    • US13366509
    • 2012-02-06
    • Masaru KitoYoshiaki FukuzumiRyota KatsumataMasaru KidohHiroyasu TanakaMegumi IshidukiYosuke KomoriHideaki Aochi
    • Masaru KitoYoshiaki FukuzumiRyota KatsumataMasaru KidohHiroyasu TanakaMegumi IshidukiYosuke KomoriHideaki Aochi
    • H01L21/336
    • H01L27/11578H01L27/11582H01L29/66833H01L29/792H01L29/7926
    • A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate, and a joining portion formed so as to join lower ends of the pair of columnar portions; a charge storage layer formed so as to surround a side surface of the columnar portions; and a first conductive layer formed so as to surround the side surface of the columnar portions and the charge storage layer, and configured to function as a control electrode of the memory cells. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; and a second conductive layer formed so as to surround a side surface of the second semiconductor layer with a gap interposed, and configured to function as a control electrode of the select transistors.
    • 非易失性半导体存储器件包括多个存储串,每个存储串具有串联连接的多个电可重写存储单元; 并选择晶体管,其中一个连接到每个存储器串的每一端。 每个存储器串都具有第一半导体层,该第一半导体层具有相对于基板在垂直方向上延伸的一对柱状部分,以及形成为连接该一对柱状部分的下端的接合部分; 形成为围绕所述柱状部的侧面的电荷存储层; 以及形成为围绕柱状部分的侧面和电荷存储层的第一导电层,并且被配置为用作存储单元的控制电极。 每个选择晶体管设置有从柱状部分的上表面向上延伸的第二半导体层; 以及第二导电层,其被形成为以间隔开的方式围绕所述第二半导体层的侧表面,并且被配置为用作所述选择晶体管的控制电极。