专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06472248B2 Microcrystalline series photovoltaic element and process for fabrication of same 有权
标题翻译：微晶系列光电元件及其制造方法
公开(公告)号：US06472248B2
公开(公告)日：2002-10-29
申请号：US09758345
申请日：2001-01-12
申请人： Atsushi Shiozaki , Masafumi Sano , Toshimitsu Kariya , Takaharu Kondo , Makoto Higashikawa , Koichi Matsuda
发明人： Atsushi Shiozaki , Masafumi Sano , Toshimitsu Kariya , Takaharu Kondo , Makoto Higashikawa , Koichi Matsuda
IPC分类号： H01L2100
CPC分类号： H01L31/03685 , H01L21/0237 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02675 , H01L31/028 , H01L31/03926 , H01L31/048 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.
摘要翻译：一种具有叠层结构的光电元件，包括不含结晶相的第一半导体层，含有近似球形微晶相的第二半导体层，以及包含柱状微晶相的第三半导体层，该第三半导体层依次层叠，其中所述所述第三半导体层侧的第二半导体层的平均尺寸大于所述第二半导体层在所述第一半导体层一侧的所述球形微晶相的平均尺寸。

72. 发明授权

US5324364A Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content 失效
标题翻译：具有具有Ge含量最大点的i型a-SiGe半导体层的pin结光电器件
公开(公告)号：US5324364A
公开(公告)日：1994-06-28
申请号：US45176
申请日：1993-04-13
申请人： Koichi Matsuda , Masafumi Sano , Tsutomu Murakami
发明人： Koichi Matsuda , Masafumi Sano , Tsutomu Murakami
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/075
CPC分类号： H01L31/076 , H01L31/03765 , H01L31/065 , H01L31/075 , Y02E10/548
摘要： A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.
摘要翻译：一种pin结光电器件，包括衬底和设置在所述衬底上的pin结半导体有源层区域，所述pin结半导体有源层区域包括由p型非单晶半导体材料构成的p型半导体层，i 由n型非单晶半导体材料构成的n型半导体层以及由n型非单晶半导体材料构成的n型半导体层，其特征在于，（a）基本上不含锗原子的单晶硅半导体材料介于所述p型半导体层和所述i型半导体层之间，（b）包含基本上不含锗原子的非单晶硅半导体材料的缓冲层介于所述i型半导体层和所述n型半导体层，并且所述i型半导体层形成为o f是在锗原子在厚度方向上的浓度分布同时提供最大浓度点的整个区域中含有锗原子的含量为20至70原子％的非晶硅锗半导体材料。

73. 发明授权

US5190838A Electrophotographic image-forming member with photoconductive layer comprising non-single-crystal silicon carbide 失效
标题翻译：具有包含非单晶碳化硅的光电导层的电子照相成像部件
公开(公告)号：US5190838A
公开(公告)日：1993-03-02
申请号：US572354
申请日：1990-08-27
申请人： Keishi Saitoh , Masafumi Sano , Koichi Matsuda
发明人： Keishi Saitoh , Masafumi Sano , Koichi Matsuda
IPC分类号： G03G5/082
CPC分类号： G03G5/08214 , G03G5/08221 , G03G5/08235
摘要： An electrophotographic image-forming member which comprises a substrate for electrophotography and a light receiving layer being disposed on said substrate, said light receiving layer comprising a photoconductive layer formed of a non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount of 1 to 10 atomic %, containing graphite structure domains in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared adsorption spectrum.The light receiving layer may further comprise a charge injection inhibition layer or/and a surface layer.The electrophotographic image-forming member can be used in a high-speed continuous electrophotographic copying systems using a coherent light laser beam as the light source without accompaniment of the problems which are found on conventional amorphous silicon carbide system electrophotographic image-forming members.
摘要翻译：一种电子照相图像形成部件，包括用于电子照相的基板和设置在所述基板上的受光层，所述光接收层包括由含有硅原子作为基体的非单晶碳化硅膜形成的光电导层，碳原子数为5〜15原子％，氢原子为1〜10原子％，含有比例为1％以下的石墨结构域，单位体积的重量比为0.01〜0.05，CH 键拉伸模式和Si-H键拉伸模式在红外吸收光谱中。光接收层还可以包括电荷注入抑制层或/和表面层。电子照相图像形成构件可以用于使用相干光激光束作为光源的高速连续电子照相复印系统，而不伴随在常规非晶碳化硅系统电子照相成像构件上发现的问题。

74. 发明授权

US5024706A Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film 失效
标题翻译：引脚异质结光电元件与多晶AlP（H，F）半导体膜
公开(公告)号：US5024706A
公开(公告)日：1991-06-18
申请号：US467523
申请日：1990-01-19
申请人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
发明人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
IPC分类号： H01L31/04 , H01L21/205 , H01L31/0304 , H01L31/075 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , H01L21/0237 , H01L21/02425 , H01L21/0245 , H01L21/02461 , H01L21/02532 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/0304 , H01L31/03042 , H01L31/075 , H01L31/184 , H01L31/20 , Y02E10/544 , Y02E10/548
摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of aluminum atoms (Al), phosphorus atoms (P), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the range of 50 to 1000 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 5 atomic %; said i-type comprises a either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).
摘要翻译：一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种层包括由铝原子（Al），磷原子（P），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜，所述多晶半导体膜含有平均尺寸在50〜1000范围内的晶粒，所述多晶半导体膜含有0.5〜5原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）中的至少一种原子，或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种的选自氢原子（H）和氟原子（F）的原子。

75. 发明授权

US5006180A Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film 失效
标题翻译：引脚异质结光电元件与多晶GaP（H，F）半导体膜
公开(公告)号：US5006180A
公开(公告)日：1991-04-09
申请号：US467538
申请日：1990-01-19
申请人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
发明人： Masahiro Kanai , Tatsuyuki Aoike , Koichi Matsuda , Soichiro Kawakami
IPC分类号： H01L31/04 , H01L21/205 , H01L31/0368 , H01L31/0392 , H01L31/075 , H01L31/18
CPC分类号： H01L31/076 , H01L21/0237 , H01L21/02425 , H01L21/0245 , H01L21/02461 , H01L21/02532 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/0368 , H01L31/075 , H01L31/184 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of gallium atoms (Ga), phosphorus atoms (P), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the rage of 50 to 1000 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 5 atomic %; and said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).
摘要翻译：一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种层包括由p型或n型掺杂元素的镓原子（Ga），磷原子（P），氢原子（H），任选的氟原子（F）和原子（M）组成的多晶半导体膜，所述多晶半导体膜含有平均尺寸在50〜1000范围内的晶粒，所述多晶半导体膜含有0.5〜5原子％的氢原子（H）; 并且所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）中的至少一种原子，或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种的选自氢原子（H）和氟原子（F）的原子。

76. 发明授权

US4795723A Electrically conductive ceramic product and process for its production 失效
标题翻译：导电陶瓷产品及其生产工艺
公开(公告)号：US4795723A
公开(公告)日：1989-01-03
申请号：US016366
申请日：1987-02-19
申请人： Hiroshi Nishikawa , Koichi Matsuda , Masami Nakashima
发明人： Hiroshi Nishikawa , Koichi Matsuda , Masami Nakashima
IPC分类号： C04B35/58 , C04B35/583 , C23C14/24
CPC分类号： C04B35/58071 , C04B35/583 , C04B35/645 , C23C14/243
摘要： An electrically conductive hot press sintered ceramic product comprising boron nitride, titanium diboride and aluminum nitride and having a flexural strength of at least 900 kg/cm.sup.2, a specific resistance of from 300 to less than 2,500 .mu..OMEGA.cm and less anisotropy.
摘要翻译：一种导电热压烧结陶瓷产品，其包含氮化硼，二硼化钛和氮化铝，其弯曲强度为至少900kg / cm 2，电阻率为300至小于2,500μ欧姆/ cm，具有较小的各向异性。

77. 发明授权

US4746455A Liquid detergent composition for clothing articles 失效
标题翻译：衣物用液体洗涤剂组合物
公开(公告)号：US4746455A
公开(公告)日：1988-05-24
申请号：US64706
申请日：1987-06-22
申请人： Koichi Matsuda , Atsuo Nakae , Moriyasu Murata , Akira Suzuki
发明人： Koichi Matsuda , Atsuo Nakae , Moriyasu Murata , Akira Suzuki
IPC分类号： C11D3/37
CPC分类号： C11D3/3703 , C11D3/3773
摘要： A novel liquid detergent composition for clothing articles comprising from 0.01 to 10 wt % of an organic polymer, which has a specific particle size, in the form of a polymer latex.The detergent composition has a good shrink resistance for felt.
摘要翻译：一种用于服装制品的新型液体洗涤剂组合物，其包含0.01至10重量％的具有特定粒径的聚合物胶乳形式的有机聚合物。洗涤剂组合物对于毡具有良好的抗收缩性。

78. 发明授权

US4635890A Lock mechanism for adjustable seat 失效
标题翻译：可调节座椅的锁定机构
公开(公告)号：US4635890A
公开(公告)日：1987-01-13
申请号：US657817
申请日：1984-10-05
申请人： Koichi Matsuda , Nobuaki Kondo , Yuji Tanaka
发明人： Koichi Matsuda , Nobuaki Kondo , Yuji Tanaka
IPC分类号： B60N2/06 , B60N2/07 , B60N2/08 , F16M13/00
CPC分类号： B60N2/0887 , B60N2/0705 , B60N2/0707 , B60N2/0715 , B60N2/072 , B60N2/0747 , B60N2/0825 , B60N2/0843 , B60N2/0856
摘要： A seat is mounted on right and left slide rails slidable on right and left guide rails so that the position of the seat is adjustable back and forth. Right and left lock mechanisms are mounted on the right and left slide rails, respectively, for locking a relative movement between a right or left pair of the slide and guide rails. A handle bar is connected with the left lock mechanism, for example, and extends forwardly so that the left lock mechanism is unlocked with the handle bar. The motion of the handle bar for unlocking the left lock mechanism is transmitted through a release wire and link mechanism to the right lock mechanism to unlock the right lock mechanism together. The release wire extends from the handle bar adjacent the left slide rail to the right slide rail near the front of the seat. The link means extends backwardly along the right slide rail from the end of the release wire to the right lock mechanism. The link means makes it possible to displace the position of the right end of the release wire toward the front of the seat.
摘要翻译：一个座椅安装在左右导轨上滑动的左右滑轨上，座椅的位置可以来回调节。右和左锁定机构分别安装在左右滑轨上，用于锁定左右一对滑轨和导轨之间的相对移动。把手杆例如与左锁定机构连接，并且向前延伸，从而左锁定机构用手柄解锁。用于解锁左锁定机构的手柄的运动通过释放线和连杆机构传递到右锁定机构，以将右锁定机构解锁在一起。释放线从邻近左滑轨的手柄延伸到靠近座椅前部的右滑轨。连杆装置沿着右滑轨从释放线的端部向右延伸到右锁定机构。连杆装置使得能够将释放线的右端的位置朝向座椅的前部移位。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式