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71. 发明申请

US20080107165A1 Method and apparatus for layer 1 / layer 2 convergence declaration for an adaptive equalizer 有权
标题翻译：自适应均衡器的层1 /层2收敛声明的方法和装置
公开(公告)号：US20080107165A1
公开(公告)日：2008-05-08
申请号：US11593652
申请日：2006-11-07
申请人： Alex Nicolescu , Kenji Suzuki , Brian Wall , Michael McDonnell
发明人： Alex Nicolescu , Kenji Suzuki , Brian Wall , Michael McDonnell
IPC分类号： H04L27/01
CPC分类号： H04L25/03057 , H04J3/0602 , H04J2203/006 , H04J2203/0089 , H04L2025/037
摘要： A novel method and apparatus is disclosed, that embeds with, or otherwise makes available to an adaptive equalizer, suitable for use in IEEE 10G-LRM standard compliant receivers, digital logic that monitors some of the Layer 1 and preferably some of the Layer 2 processing that typically occurs after the equalization step during decoding and processing of the record data stream. From this additional logic information, the equalizer is able to make a much more accurate prediction of equalizer convergence by counting processing errors and prove convergence by calculation of BER. The novel method and apparatus are applicable to ASIC embodiments and the complexity of the logic information obtained can be programmably scaled back or enhanced as appropriate in light of the particular communication environment.
摘要翻译：公开了一种新颖的方法和装置，其嵌入或适用于适用于IEEE 10G-LRM标准兼容接收器的自适应均衡器，数字逻辑监视第1层中的一些，并且优选地监视第2层处理中的一些这通常在解码和处理记录数据流之后的均衡步骤之后发生。根据该附加逻辑信息，均衡器能够通过对处理误差进行计数并通过计算BER来证明收敛，从而对均衡器收敛进行更准确的预测。新颖的方法和装置适用于ASIC实施例，并且根据特定通信环境，所获得的逻辑信息的复杂性可以根据特定的可编程地缩减或增强。

72. 发明申请

US20080081474A1 INTEGRATION OF A VARIABLE THICKNESS COPPER SEED LAYER IN COPPER METALLIZATION 有权
标题翻译：铜合金中可变厚度铜层的整合
公开(公告)号：US20080081474A1
公开(公告)日：2008-04-03
申请号：US11537058
申请日：2006-09-29
申请人： Kenji Suzuki
发明人： Kenji Suzuki
IPC分类号： H01L21/44
CPC分类号： H01L21/76873 , C23C14/025 , C23C14/165 , C23C14/3471 , C23C14/542 , C23C18/165 , C23C18/38 , C25D7/123 , H01L21/2855 , H01L21/28556 , H01L21/76846
摘要： A method for forming a variable thickness Cu seed layer on a substrate for a subsequent Cu electrochemical plating process, where the Cu seed layer thickness profile improves uniformity of the electroplated Cu layer compared to when using a constant thickness Cu seed layer. The method includes depositing a Ru metal layer on the substrate, depositing a variable thickness Cu seed layer on the Ru metal layer by a physical vapor deposition process, whereby the variable thickness Cu seed layer is deposited with a Cu thickness at the edge of the substrate that is less than a Cu thickness at the center of the substrate, and plating bulk Cu onto the variable thickness Cu seed layer. The Ru metal layer may be a variable thickness Ru metal layer, or alternately, the Ru metal layer may have a substantially uniform Ru metal thickness across the substrate.
摘要翻译：在用于随后的Cu电化学电镀工艺的衬底上形成可变厚度Cu籽晶层的方法，其中与使用恒定厚度的Cu籽晶层相比，Cu籽晶层厚度分布改善了电镀Cu层的均匀性。该方法包括在衬底上沉积Ru金属层，通过物理气相沉积工艺在Ru金属层上沉积可变厚度的Cu籽晶层，由此可变厚度Cu籽晶层在衬底的边缘沉积Cu厚度小于衬底中心处的Cu厚度，并将体积Cu镀在可变厚度的Cu籽晶层上。 Ru金属层可以是可变厚度的Ru金属层，或者可选地，Ru金属层可以在基底上具有基本均匀的Ru金属厚度。

73. 发明申请

US20080007862A1 Disk drive apparatus and head assembly used for the same 有权
标题翻译：磁盘驱动装置和头组件用于相同
公开(公告)号：US20080007862A1
公开(公告)日：2008-01-10
申请号：US11823216
申请日：2007-06-26
申请人： Satoshi Hayakawa , Takeshi Chawanya , Masakazu Sasaki , Kenji Suzuki
发明人： Satoshi Hayakawa , Takeshi Chawanya , Masakazu Sasaki , Kenji Suzuki
IPC分类号： G11B5/00
CPC分类号： G11B5/5565 , G11B5/5582 , G11B25/043
摘要： Embodiments of the present invention restrain the head position accuracy from degrading due to torsional vibration of a head supporting unit. According to an embodiment of the invention, an actuator has a twisted carriage arm. A suspension is tilted in accordance with the twist of the carriage arm. When the carriage arm and the suspension torsionally vibrate, the vibration direction tilts against the normal direction of a recording surface in accordance with the twist. This technique decreases a peak value of off-track displacement that is caused by a head slider and is dependent on relationship between a skew angle and a torsional vibration direction.
摘要翻译：本发明的实施例限制了头部位置精度由于头部支撑单元的扭转振动而降级。根据本发明的实施例，致动器具有扭转的支架臂。悬架根据托架臂的扭转而倾斜。当托架臂和悬架扭转振动时，振动方向根据扭转相对于记录表面的法线方向倾斜。该技术降低由磁头滑动器引起的偏离磁道位移的峰值，并且取决于倾斜角度和扭转振动方向之间的关系。

74. 发明申请

US20070295923A1 Relief Valve 审中-公开
标题翻译：泄压阀
公开(公告)号：US20070295923A1
公开(公告)日：2007-12-27
申请号：US11791475
申请日：2005-11-10
申请人： Takafumi Akutagawa , Hiroaki Kuboi , Kenji Suzuki
发明人： Takafumi Akutagawa , Hiroaki Kuboi , Kenji Suzuki
IPC分类号： F16K47/02
CPC分类号： F16K17/0433
摘要： A relief valve includes a high-pressure port (14) communicating to a hydraulic circuit (41), a low-pressure port (15) communicating to a drain circuit (42), a valve (11) supported so as to be movable in back and forward in the axial direction thereof to open and close between these ports (14, 15), a piston (12) supported so as to be movable in the coaxial direction in relation to the valve (11), a spring (13) interveningly provided between the valve (11) and the piston (12) for biasing the valve (11) to a valve closing direction against the pressure of the high-pressure port (14), a damping chamber (20) defined at back side of the piston (12), pressure guiding paths (26, 27) for guiding the pressure in the upstream side of the valve (11) to the damping chamber (20), and a plurality of orifices (30a to 30d) exchangeably arranged in series in the pressure guiding paths (26, 27).
摘要翻译：泄压阀包括与液压回路（41）连通的高压端口（14），与排水回路（42）连通的低压端口（15），被支撑为可移动的阀在所述端口（14,15）之间开启和关闭所述端口（14,15）;活塞（12），其被支撑成能够相对于所述阀（11）在同轴方向上移动;弹簧（13），插在所述阀（11）和所述活塞（12）之间，用于抵抗所述高压端口（14）的压力将所述阀（11）偏压到关闭方向;阻尼室（20）活塞（12），用于将阀（11）的上游侧的压力引导到阻尼室（20）的压力引导路径（26,27），以及多个孔（30a〜30d）在压力引导路径（26,27）中串联连接。

75. 发明申请

US20070193488A1 SEQUIN FEEDER APPARATUS 失效
公开(公告)号：US20070193488A1
公开(公告)日：2007-08-23
申请号：US11569474
申请日：2005-05-26
申请人： Ikuo Tajima , Satoru Suzuki , Kenji Suzuki
发明人： Ikuo Tajima , Satoru Suzuki , Kenji Suzuki
IPC分类号： D05C7/08
CPC分类号： D05B3/22 , D05C7/08 , D05D2303/12
摘要： Continuous sequin strip having a multiplicity of continuously-connected sequins is let out from a reel and then placed on the upper surface of a supporting plate. Sequin feeder apparatus feeds the sequin strip at a predetermined pitch corresponding to a size of a sequin of the continuous sequin strip through advancing and retracting movement of a feed lever interlocked to sewing operation of a needle bar of a sewing machine. The feed lever includes two engaging portions for engaging a predetermined sequin of the strip to feed the strip. With the two engaging portions engaging at least two points of the sequin, the sequin can be fed out reliably irrespective of the position of the sewing hole formed in the sequin. Thus, even sequins, each having the sewing hole eccentrically offset in a direction perpendicular to a sequin-strip feeding direction, can be fed out at the predetermined pitch with an increased reliability.
摘要翻译：具有多个连续连接的亮片的连续亮片条从卷轴中放出，然后放置在支撑板的上表面上。缝合给料装置通过与缝纫机的针杆的缝合操作互锁的进给杆的前进和后退运动，以对应于连续亮片条的亮片的尺寸的预定间距进给亮片条。进给杆包括两个接合部分，用于接合条带的预定的金刚片以供给条带。通过两个接合部分接合亮片的至少两个点，可以可靠地送出金片，而与金刚片中形成的缝合孔的位置无关。因此，即使在具有与亮片输送方向正交的方向偏心偏移的缝制孔的情况下，也可以以增加的可靠性以预定间距送出亮片。

76. 发明申请

US20070191219A1 CATALYTIC MATERIAL, PRODUCTION METHOD THEREFOR, AND DIESEL PARTICULATE FILTER 审中-公开
标题翻译：催化材料，其生产方法和柴油颗粒过滤器
公开(公告)号：US20070191219A1
公开(公告)日：2007-08-16
申请号：US11668518
申请日：2007-01-30
申请人： Hiroki Fujita , Koichiro Harada , Kenji Okamoto , Yoshinori Tsushio , Akihide Takami , Kenji Suzuki
发明人： Hiroki Fujita , Koichiro Harada , Kenji Okamoto , Yoshinori Tsushio , Akihide Takami , Kenji Suzuki
IPC分类号： B01J23/00 , B01J23/10
CPC分类号： B01J23/10 , B01J23/63 , B01J35/0013 , B01J35/04 , B01J37/0215 , B01J37/03 , B01J37/038 , C01G25/006 , F01N3/035
摘要： Disclosed is a catalytic material for removing diesel particulates, which comprises a composite oxide which contains zirconium as a primary component and a rare-earth metal except for cerium and yttrium. The composite oxide has a crystallite diameter of 13 nm to 40 nm.
摘要翻译：公开了一种用于除去柴油微粒的催化材料，其包含含有锆作为主要成分的复合氧化物和除了铈和钇之外的稀土金属。复合氧化物的微晶直径为13nm〜40nm。

77. 发明申请

US20070072415A1 Method for integrating a ruthenium layer with bulk copper in copper metallization 有权
标题翻译：在铜金属化中整合钌层与体铜的方法
公开(公告)号：US20070072415A1
公开(公告)日：2007-03-29
申请号：US11238756
申请日：2005-09-28
申请人： Kenji Suzuki
发明人： Kenji Suzuki
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , C23C16/56 , H01L21/28556 , H01L21/76856 , H01L21/76864 , H01L21/76873 , H01L21/76874
摘要： A method for integrating a Ru layer with bulk Cu in semiconductor manufacturing. The method includes depositing a Ru layer onto a substrate in a chemical vapor deposition process, modifying the deposited Ru layer by oxidation, or nitridation, or a combination thereof, depositing an ultra thin Cu layer onto the modified Ru layer, and plating a Cu layer onto the ultra thin Cu layer.
摘要翻译：在半导体制造中将Ru层与体Cu一体化的方法。该方法包括在化学气相沉积工艺中将Ru层沉积到衬底上，通过氧化或氮化或其组合改性沉积的Ru层，在改性的Ru层上沉积超薄的Cu层，以及镀覆Cu层到超薄Cu层上。

78. 发明申请

US20070069383A1 Semiconductor device containing a ruthenium diffusion barrier and method of forming 审中-公开
标题翻译：含有钌扩散阻挡层的半导体装置及其形成方法
公开(公告)号：US20070069383A1
公开(公告)日：2007-03-29
申请号：US11238500
申请日：2005-09-28
申请人： Kenji Suzuki
发明人： Kenji Suzuki
IPC分类号： H01L23/52
CPC分类号： H01L21/28556 , C23C16/16 , C23C16/18 , C23C16/56 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76873
摘要： A semiconductor device containing a ruthenium diffusion barrier and a method of forming and integrating the ruthenium diffusion barrier with bulk Cu. The method includes forming the Ru diffusion barrier by depositing a first Ru layer onto a substrate in a first CVD process, modifying the first Ru layer by oxidation, or nitridation, or a combination thereof, depositing a second Ru layer on the modified first Ru layer, and plating a Cu layer onto the Ru diffusion barrier. According to one embodiment of the invention, the Ru diffusion barrier is treated and/or an ultra thin Cu layer deposited on the Ru diffusion barrier prior to Cu plating.
摘要翻译：包含钌扩散阻挡层的半导体器件以及形成和整合钌扩散阻挡层与体积Cu的方法。该方法包括通过在第一CVD工艺中在衬底上沉积第一Ru层来形成Ru扩散势垒，通过氧化或氮化或其组合来修饰第一Ru层，在修饰的第一Ru层上沉积第二Ru层，并将Cu层镀在Ru扩散阻挡层上。根据本发明的一个实施例，在Cu镀覆之前，Ru扩散阻挡层被处理和/或沉积在Ru扩散阻挡层上的超薄Cu层。

79. 发明申请

US20070041004A1 Illumination optical system, projection/exposure device, micro device manufacturing method, illumination device manufacturing method, projection/exposure device adjustment method, and projection/exposure device manufacturing method 有权
标题翻译：照明光学系统，投影/曝光装置，微型装置制造方法，照明装置制造方法，投影/曝光装置调整方法以及投影/曝光装置的制造方法
公开(公告)号：US20070041004A1
公开(公告)日：2007-02-22
申请号：US10556712
申请日：2004-05-06
申请人： Kenji Suzuki
发明人： Kenji Suzuki
IPC分类号： G03B27/54
CPC分类号： B82Y10/00 , G03F7/70075 , G03F7/70083 , G03F7/70166 , G03F7/70175 , G03F7/702 , G21K1/06
摘要： An object of this invention is to reduce even slight irregularities in illumination that occur after assembly of an optical system. To this end, in an exemplary illumination-optical system, a light source that emits extreme ultraviolet (EUV) light, a collimator, a fly's-eye mirror, and a condenser are positioned, in this stated order. A prescribed illumination area on the emission side of the condenser is irradiated with Köhler illumination. At least one unit mirror, among multiple unit mirrors of the fly's-eye mirror, is a correction mirror that has reflectivity irregularities. The reflectivity irregularities correct a portion of, or all, the illumination irregularities in the illumination area.
摘要翻译：本发明的一个目的是减少在组装光学系统之后发生的照明中的均匀轻微的不规则性。为此，在示例性照明光学系统中，按照该顺序定位发射极紫外（EUV）光的光源，准直仪，飞眼镜和冷凝器。用Köhler照明照射冷凝器出射侧的规定照明区域。在飞眼镜的多个单元反射镜中，至少有一个单元镜是具有反射率不均匀性的校正镜。反射率不规则校正照明区域中的照明不规则部分或全部。

80. 发明授权

US07179672B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07179672B2
公开(公告)日：2007-02-20
申请号：US10976987
申请日：2004-11-01
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved.The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

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