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71. 发明授权

US08436437B2 High performance MTJ elements for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US08436437B2
公开(公告)日：2013-05-07
申请号：US12803191
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and a free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness or an amorphous ferromagnetic layer of Co40Fe40B20 of approximately 15 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：利用自旋角度动量的转移作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元包括IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧穿势垒层，其形成于被钉扎层的Ar离子等离子体平滑表面和包含大约20埃厚度的Co60Fe20B20的非晶层的自由层或者在3和6的Fe的两个结晶层之间形成约15埃厚度的Co40Fe40B20的非晶铁磁层埃厚度。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

72. 发明授权

US08273666B2 Process to fabricate bottom electrode for MRAM device 有权
标题翻译：制造MRAM器件底电极的工艺
公开(公告)号：US08273666B2
公开(公告)日：2012-09-25
申请号：US12927615
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
摘要翻译：在氮化硅衬底上形成用于MTJ器件的底部电极通过包括在所述底部电极的α钽部分的蚀刻期间部分消耗的保护涂层来促进。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。

73. 发明授权

US08138561B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM 有权
标题翻译：用于制造自旋转矩（STT）-RAM的高性能MTJ装置的结构和方法
公开(公告)号：US08138561B2
公开(公告)日：2012-03-20
申请号：US12284066
申请日：2008-09-18
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Po-Kang Wang , Robert Beach , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by a NOX process, a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0, and a Ru capping layer to enhance the spin scattering effect and increase dR/R. Good write margin is achieved by modifying the NOX process to afford a RA less than 10 ohm-μm2 and good read margin is realized with a dR/R of >100% by annealing at 330° C. or higher to form crystalline CoFeB free layers. The NCC thickness is maintained in the 6 to 10 Angstrom range to reduce Rp and avoid Fe(Si) granules from not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A FeSiO layer may be inserted below the Ru layer in the capping layer to prevent the Ru from causing a high damping constant in the upper CoFeB free layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过NOX工艺形成的MgO隧道势垒，具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以最小化Jc0，以及Ru覆盖层以增强自旋散射效应并增加 dR / R。通过改变NOX工艺以获得RA小于10欧姆 - μm2的良好的写入余量，并且通过在330℃或更高温度退火以dO / R> 100％实现良好的读取余量以形成结晶CoFeB自由层。 NCC厚度保持在6至10埃范围内以减少Rp，并避免Fe（Si）颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在覆盖层中的Ru层下方插入FeSiO层，以防止Ru在上部CoFeB自由层中引起高阻尼常数。

74. 发明授权

US08080432B2 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US08080432B2
公开(公告)日：2011-12-20
申请号：US12803190
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L21/00 , H01L21/336 , H01L21/461
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20. of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：形成利用自旋角动量转移的STT-MTJ MRAM单元的形成方法，作为改变自由层的磁矩方向的机构。该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层 Co60Fe20B20层。分别在3和6埃的Fe的两个结晶层之间形成约20埃的厚度。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

75. 发明申请

US20100315869A1 Spin torque transfer MRAM design with low switching current 审中-公开
标题翻译：旋转扭矩传递MRAM设计，开关电流低
公开(公告)号：US20100315869A1
公开(公告)日：2010-12-16
申请号：US12456324
申请日：2009-06-15
申请人： Tai Min , Witold Kula
发明人： Tai Min , Witold Kula
IPC分类号： G11C11/14 , H01L21/00 , H01L29/82
CPC分类号： H01L29/66984 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , H01F10/3259 , H01F10/3268 , H01F10/329 , H01F41/303 , H01F41/307 , H01F41/325 , H01L43/08 , H01L43/12
摘要： The invention discloses a method to store digital information through use of spin torque transfer in a device that has a very low critical current. This is achieved by adding a spin filtering layer whose direction of magnetization is fixed to be parallel to the device's pinned layer.
摘要翻译：本发明公开了一种通过在具有非常低临界电流的装置中使用自旋扭矩传递来存储数字信息的方法。这是通过添加其磁化方向被固定为平行于器件的钉扎层的自旋过滤层来实现的。

76. 发明申请

US20100261295A1 High performance MTJ element for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US20100261295A1
公开(公告)日：2010-10-14
申请号：US12803190
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L21/8246
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co60Fe20B20.of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：形成利用自旋角动量转移的STT-MTJ MRAM单元的形成方法，作为改变自由层的磁矩方向的机构。该器件包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，包含非晶态的自由层分别在3和6埃厚度的Fe的两个结晶层之间形成大约20埃厚度的Co60Fe20B20的层。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

77. 发明申请

US20100240151A1 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices 有权
标题翻译：双重图案化和蚀刻用于自旋转移转矩MRAM器件的磁性隧道结结构的方法
公开(公告)号：US20100240151A1
公开(公告)日：2010-09-23
申请号：US12383298
申请日：2009-03-23
申请人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
发明人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L21/04
CPC分类号： H01L27/228 , H01L43/12
摘要： A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps each followed by two plasma etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers. The hard mask has an upper Ta layer with a thickness of 300 to 400 Angstroms and a lower NiCr layer less than 50 Angstroms thick. The upper Ta layer is etched with a fluorocarbon etch while lower NiCr layer and underlying MTJ layers are etched with a CH3OH. Preferably, a photoresist mask layer is removed by oxygen plasma between the fluorocarbon and CH3OH plasma etches. A lower hard mask layer made of NiCr or the like is inserted to prevent formation and buildup of Ta etch residues that can cause device shunting.
摘要翻译：公开了一种用于在STT-MRAM中形成MTJ的方法，其中容易轴CD独立于硬轴CD来确定。一种方法涉及两个光刻步骤，每个步骤分别采用两个等离子体蚀刻步骤，以在通过MTJ堆叠层传送的硬掩模中形成柱。硬掩模具有厚度为300至400埃的上层Ta层和小于50埃厚的较低NiCr层。用氟碳蚀刻蚀刻上层Ta层，同时用CH3OH蚀刻下层NiCr层和下层MTJ层。优选地，在碳氟化合物和CH 3 OH等离子蚀刻之间的氧等离子体去除光致抗蚀剂掩模层。插入由NiCr等制成的下部硬掩模层以防止可能导致器件分流的Ta蚀刻残留物的形成和积累。

78. 发明授权

US07672093B2 Hafnium doped cap and free layer for MRAM device 有权
标题翻译：铪掺杂帽和MRAM器件的自由层
公开(公告)号：US07672093B2
公开(公告)日：2010-03-02
申请号：US11582244
申请日：2006-10-17
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11C11/161 , H01F10/3281 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer, thereby increasing the sharpness of the free layer-tunneling layer interface. The free layer comprises two NiFe layers whose magnetostriction constants are of opposite sign, thereby largely canceling one another.
摘要翻译：描述了高性能MTJ及其制造方法。使用NiFeHf的覆盖层将氧气从自由层中吸出，从而增加了自由层 - 隧道层界面的清晰度。自由层包含两个NiFe层，它们的磁致伸缩常数是相反的，从而很大程度地相互抵消。

79. 发明申请

US20090078927A1 Composite hard mask for the etching of nanometer size magnetic multilayer based device 有权
标题翻译：复合硬掩模用于蚀刻纳米尺寸磁性多层器件
公开(公告)号：US20090078927A1
公开(公告)日：2009-03-26
申请号：US11901999
申请日：2007-09-20
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula , Adam Zhong
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula , Adam Zhong
IPC分类号： H01L29/06 , H01L21/02
CPC分类号： H01L43/12 , Y10T428/24736
摘要： A composite hard mask is disclosed that enables sub-100 nm sized MTJ cells to be formed for advanced devices such as spin torque MRAMs. The hard mask has a lower non-magnetic metallic layer such as Ru to magnetically isolate an overlying middle metallic spacer such as MnPt from an underlying free layer. The middle metallic spacer provides a height margin during subsequent processing to avoid shorting between a bit line and the MTJ cell in the final device. An upper conductive layer may be made of Ta and is thin enough to allow a MTJ pattern in a thin overlying photoresist layer to be transferred through the Ta during a fluorocarbon etch without consuming all of the photoresist. The MTJ pattern is transferred through the remaining hard mask layers and underlying MTJ stack of layers with a second etch step using a C, H, and O etch gas composition.
摘要翻译：公开了一种复合硬掩模，其能够为高级装置（例如自旋扭矩MRAM）形成次100nm大小的MTJ电池。硬掩模具有较低的非磁性金属层，例如Ru，以将下层的中间金属间隔物（例如MnPt）与下层的自由层磁隔离。中间金属间隔件在后续处理期间提供高度余量以避免位线和最终装置中的MTJ单元之间的短路。上导电层可以由Ta制成，并且足够薄以使氟薄膜蚀刻中的薄覆盖光致抗蚀剂层中的MTJ图案能够通过Ta Ta传输而不消耗所有的光致抗蚀剂。使用C，H和O蚀刻气体组合物，通过第二蚀刻步骤将MTJ图案转移通过剩余的硬掩模层和下面的MTJ堆叠层。

80. 发明申请

US20080090307A1 Bottom electrode for MRAM device and method to fabricate it 有权
标题翻译：用于MRAM设备的底电极及其制造方法
公开(公告)号：US20080090307A1
公开(公告)日：2008-04-17
申请号：US11528877
申请日：2006-09-28
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.
摘要翻译：通过在氮化硅表面附近包括一层钌来促进在氮化硅衬底上形成用于MTJ器件的底部电极。钌是良好的电导体，并且它对Ta和TaN的反应与某些蚀刻剂不同。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。因此，所述包含的钌层可以在蚀刻Ta和/或TaN期间用作蚀刻停止层，而后者可用于形成用于蚀刻钌的硬掩模，而不会对氮化硅表面产生显着的腐蚀。

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