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    • 71. 发明授权
    • Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing
    • 在化学机械抛光中控制同一台板上多个基板的抛光
    • US08616935B2
    • 2013-12-31
    • US12792651
    • 2010-06-02
    • Jimin ZhangIngemar CarlssonStephen JewBoguslaw A Swedek
    • Jimin ZhangIngemar CarlssonStephen JewBoguslaw A Swedek
    • B24B49/02B24B49/10B24B49/12B24B1/00
    • B24B37/013B24B49/12
    • A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.
    • 抛光方法包括在同一抛光垫上同时抛光两个基板,第一基板和第二基板。 存储默认的过度抛光时间,并且现场监控系统监控两个基板。 原位监测系统还分别确定第一和第二基底的第一抛光终点时间和第二抛光终点时间。 抛光方法还包括计算过度抛光停止时间,其中抛光停止时间在第一抛光终点时间加上默认过度抛光时间与第二抛光终点时间加上默认过度抛光时间之间。 第一衬底的抛光继续经过第一抛光终点时间,并且第二衬底的抛光继续经过第二抛光终点时间。 在抛光停止时间同时停止第一基板和第二基板的抛光。
    • 79. 发明申请
    • METHODS AND APPARATUS FOR FOCUSED ULTRASOUND APPLICATION
    • 聚焦超声波应用的方法与装置
    • US20110118602A1
    • 2011-05-19
    • US13011533
    • 2011-01-21
    • Lee WengDavid M. PerozekJimin Zhang
    • Lee WengDavid M. PerozekJimin Zhang
    • A61N7/00A61B8/00
    • A61B8/4422A61B17/0057A61B2017/00504A61B2017/00641A61B2017/00907A61B2090/062A61B2090/378A61B2090/3904A61B2090/3937A61B2562/164A61N7/02G10K11/32G10K11/346
    • An ultrasonic applicator unit (2) is used diagnostically to locate a puncture wound (316) in an artery and then therapeutically to seal the puncture wound with high intensity focused ultrasound (HIFU). A control unit (6) coupled to the applicator unit includes a processor (74) that automates the procedure, controlling various parameters of the diagnostic and therapeutic modes, including the intensity and duration of the ultrasonic energy emitted by the applicator unit. A protective, sterile acoustic shell (4), which is intended to be used with a single patient and then discarded, is slipped over the applicator unit to protect against direct contact between the applicator unit and the patient and to maintain a sterile field at the site of the puncture. The apparatus and method are particularly applicable to sealing a puncture made when inserting a catheter into an artery or other vessel. Several different procedures are described for locating the puncture wound, including imaging the vessel in which the puncture is disposed and use of a locator rod to determine the disposition of the puncture along the longitudinal axis of the artery.
    • 超声波施加器单元(2)用于诊断性地将穿刺伤口(316)定位在动脉中,然后在治疗上定位以用高强度聚焦超声(HIFU)密封穿刺伤口。 耦合到施加器单元的控制单元(6)包括处理器(74),其自动化过程,控制诊断和治疗模式的各种参数,包括施加器单元发射的超声能量的强度和持续时间。 旨在与单个患者一起使用然后被丢弃的保护性无菌声学外壳(4)被滑过施用器单元以防止施用器单元和患者之间的直接接触并且保持无菌区域在 穿刺部位。 该装置和方法特别适用于在将导管插入动脉或其他血管时进行的穿刺的密封。 描述了用于定位穿刺伤口的几种不同的程序,包括对其中设置穿刺的容器进行成像,并使用定位杆来确定沿着动脉的纵向轴线的穿刺的布置。