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71. 发明授权

US06403453B1 Dose control technique for plasma doping in ultra-shallow junction formations 有权
标题翻译：用于等离子体掺杂在超浅结结构中的剂量控制技术
公开(公告)号：US06403453B1
公开(公告)日：2002-06-11
申请号：US09626837
申请日：2000-07-27
申请人： Yoshi Ono , Yanjun Ma , Sheng Teng Hsu
发明人： Yoshi Ono , Yanjun Ma , Sheng Teng Hsu
IPC分类号： H01L2126
CPC分类号： H01L21/2236
摘要： A method of plasma doping substrates is provided. The substrate is covered with photoresist and placed within a plasma chamber. A doping gas is introduced into the chamber and ionized. A dilutant gas is also introduced to provide better control of the total amount of dosage associated with a given duration of exposure. The dilutant gas is preferably monatomic to reduce, or eliminate, affects associated with pressure variations within the chamber caused by dissociation of elements within the plasma chamber. The dilutant gas preferably contains lighter elements so as to reduce, or eliminate, damage to the photoresist caused by ion impacts. The dilutant gas is preferably neon or helium. The present method provides a means to better control the dosage and reduce photoresist damage and contamination.
摘要翻译：提供了一种等离子体掺杂衬底的方法。衬底被光致抗蚀剂覆盖并置于等离子体室内。将掺杂气体引入室并离子化。还引入稀释气体以更好地控制与给定的暴露持续时间相关的剂量的总量。稀释气体优选是单原子的，以减少或消除由等离子体室内的元素解离引起的室内压力变化的影响。稀释气体优选含有较轻的元素，以便减少或消除由离子冲击引起的光致抗蚀剂的损伤。稀释气体优选为氖气或氦气。本方法提供了更好地控制剂量并减少光致抗蚀剂损伤和污染的方法。

72. 发明授权

US06348373B1 Method for improving electrical properties of high dielectric constant films 失效
标题翻译：改善高介电常数膜电性能的方法
公开(公告)号：US06348373B1
公开(公告)日：2002-02-19
申请号：US09538017
申请日：2000-03-29
申请人： Yanjun Ma , Yoshi Ono
发明人： Yanjun Ma , Yoshi Ono
IPC分类号： H01L218242
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/31155 , H01L21/31604 , H01L21/31691 , H01L29/517
摘要： A method of improving the electrical properties of high dielectric constant films by depositing an initial film and implanting oxygen ions to modify the film by decreasing the oxygen deficiency of the film while reducing or eliminating formation of an interfacial silicon dioxide layer. An initial high dielectric constant material is deposited over a silicon substrate by means of CVD, reactive sputtering or evaporation. Oxygen ions are preferably implanted using plasma ion immersion (PIII), although other methods are also provided. Following implantation the substrate is annealed to condition the high dielectric constant film.
摘要翻译：通过沉积初始膜和注入氧离子以改善膜的氧缺陷，同时减少或消除界面二氧化硅层的形成来改善高介电常数膜的电性能的方法。初始高介电常数材料通过CVD，反应溅射或蒸发沉积在硅衬底上。尽管还提供了其他方法，但优选使用等离子体离子浸渍（PIII）来注入氧离子。在注入后，将衬底退火以调节高介电常数膜。

73. 发明授权

US6060755A Aluminum-doped zirconium dielectric film transistor structure and deposition method for same 有权
标题翻译：掺铝锆电介质膜晶体管结构及其沉积方法相同
公开(公告)号：US6060755A
公开(公告)日：2000-05-09
申请号：US356470
申请日：1999-07-19
申请人： Yanjun Ma , Yoshi Ono
发明人： Yanjun Ma , Yoshi Ono
IPC分类号： C23C14/08 , C23C14/14 , C23C14/58 , C23C16/06 , C23C16/56 , H01B3/12 , H01L21/02 , H01L21/28 , H01L21/316 , H01L21/8232 , H01L29/51 , H01L29/78 , H01L29/76
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L28/56
摘要： A high-k dielectric film is provided which remains amorphous at relatively high annealing temperatures. The high-k dielectric film is a metal oxide of either Zr or Hf, doped with a trivalent metal, such as Al. Because the film resists the formation of a crystalline structure, interfaces to adjacent films have fewer irregularities. When used as a gate dielectric, the film can be made thin to support smaller transistor geometries, while the surface of the channel region can be made smooth to support high electron mobility. Also provided are CVD, sputtering, and evaporation deposition methods for the above-mentioned, trivalent metal doped high dielectric films.
摘要翻译：提供了一种高k电介质膜，其在相对高的退火温度下保持非晶态。高k电介质膜是掺杂有三价金属如Al的Zr或Hf的金属氧化物。由于膜抵抗晶体结构的形成，与相邻膜的界面具有较少的不规则性。当用作栅极电介质时，可以使膜变薄以支持更小的晶体管几何形状，同时沟道区域的表面可以被制成平滑的以支持高电子迁移率。还提供了用于上述三价金属掺杂的高介电膜的CVD，溅射和蒸发沉积方法。

74. 发明授权

US07528695B2 Method to manipulate selectivity of a metal oxide sensor 失效
标题翻译：操纵金属氧化物传感器选择性的方法
公开(公告)号：US07528695B2
公开(公告)日：2009-05-05
申请号：US11361519
申请日：2006-02-23
申请人： John F. Conley, Jr. , Yoshi Ono
发明人： John F. Conley, Jr. , Yoshi Ono
IPC分类号： H01C7/00
CPC分类号： G01N33/0027
摘要： A method of selectively enhancing the sensitivity of a metal oxide sensor includes fabricating a ZnO sensor having a ZnO sensor element therein; and exposing the ZnO sensor element to a plasma stream.
摘要翻译：选择性提高金属氧化物传感器的灵敏度的方法包括制造其中具有ZnO传感器元件的ZnO传感器; 并将ZnO传感器元件暴露于等离子体流。

75. 发明授权

US07470573B2 Method of making CMOS devices on strained silicon on glass 失效
标题翻译：在玻璃上的应变硅上制造CMOS器件的方法
公开(公告)号：US07470573B2
公开(公告)日：2008-12-30
申请号：US11060878
申请日：2005-02-18
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Yoshi Ono , Sheng Teng Hsu
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L21/30 , H01L21/84
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1266 , H01L29/7842 , H01L29/78621
摘要： A method of making CMOS devices on strained silicon on glass includes preparing a glass substrate, including forming a strained silicon layer on the glass substrate; forming a silicon oxide layer by plasma oxidation of the strained silicon layer; depositing a layer of doped polysilicon on the silicon oxide layer; forming a polysilicon gate; implanting ions to form a LDD structure; depositing and forming a spacer dielectric on the gate structure; implanting and activation ions to form source and drain structures; depositing a layer of metal film; annealing the layer of metal film to form salicide on the source, drain and gate structures; removing any unreacted metal film; depositing a layer of interlayer dielectric; and forming contact holes and metallizing.
摘要翻译：在玻璃上的应变硅上制造CMOS器件的方法包括制备玻璃衬底，包括在玻璃衬底上形成应变硅层; 通过应变硅层的等离子体氧化形成氧化硅层; 在氧化硅层上沉积掺杂多晶硅层; 形成多晶硅栅极; 注入离子以形成LDD结构; 在栅极结构上沉积和形成间隔电介质; 植入和激活离子以形成源和漏结构; 沉积一层金属膜; 退火金属膜层，在源极，漏极和栅极结构上形成硅化物; 去除任何未反应的金属膜; 沉积层间电介质层; 并形成接触孔和金属化。

76. 发明授权

US07364989B2 Strain control of epitaxial oxide films using virtual substrates 有权
标题翻译：使用虚拟衬底的外延氧化膜的应变控制
公开(公告)号：US07364989B2
公开(公告)日：2008-04-29
申请号：US11174350
申请日：2005-07-01
申请人： Douglas J. Tweet , Yoshi Ono , David R. Evans , Sheng Teng Hsu
发明人： Douglas J. Tweet , Yoshi Ono , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L21/20
CPC分类号： H01L21/02192 , H01L21/02197 , H01L21/0228 , H01L21/3147
摘要： A method of controlling strain in a single-crystal, epitaxial oxide film, includes preparing a silicon substrate; forming a silicon alloy layer taken from the group of silicon alloy layer consisting of Si1-xGex and Si1-yCy on the silicon substrate; adjusting the lattice constant of the silicon alloy layer by selecting the alloy material content to adjust and to select a type of strain for the silicon alloy layer; depositing a single-crystal, epitaxial oxide film, by atomic layer deposition, taken from the group of oxide films consisting of perovskite manganite materials, single crystal rare-earth oxides and perovskite oxides, not containing manganese; and rare earth binary and ternary oxides, on the silicon alloy layer; and completing a desired device.
摘要翻译：一种控制单晶外延氧化膜中的应变的方法包括制备硅衬底; 从由Si 1-x Ge x Si和Si 1-y C C组成的硅合金层组形成硅合金层 > y ; 通过选择合金材料含量来调整硅合金层的晶格常数，并选择一种用于硅合金层的应变; 从由不含锰的钙钛矿亚锰酸盐材料，单晶稀土氧化物和钙钛矿氧化物组成的氧化膜组中，通过原子层沉积法沉积单晶外延氧化膜; 和稀土二元和三元氧化物，在硅合金层上; 并完成所需的设备。

77. 发明授权

US07190526B1 Step-over lithography to produce parabolic photoresist profiles for microlens formation 失效
标题翻译：逐步光刻以产生用于微透镜形成的抛物线光致抗蚀剂轮廓
公开(公告)号：US07190526B1
公开(公告)日：2007-03-13
申请号：US11416983
申请日：2006-05-02
申请人： Bruce D. Ulrich , Yoshi Ono
发明人： Bruce D. Ulrich , Yoshi Ono
IPC分类号： G02B27/10 , B29D11/00 , G03C5/00
CPC分类号： G03F7/0007 , B29D11/00365 , G02B3/0012
摘要： A method of microlens fabrication for use in a photosensor includes preparing a photodetector element array which is sensitive to light in a specific color domain and depositing microlens material on the photodetector element array. The structure is coated with photoresist, and the photoresist is masked and exposed in a separate exposure for each color in the color domain. The photoresist is developed and the microlens material etched to form a microlens array.
摘要翻译：用于光电传感器的微透镜制造方法包括制备对特定色域中的光敏感的光电检测器元件阵列，并将微透镜材料沉积在光电探测元件阵列上。该结构涂覆有光致抗蚀剂，并且光致抗蚀剂被掩蔽并且在颜色域中针对每种颜色的单独曝光曝光。显影光致抗蚀剂，并将微透镜材料蚀刻以形成微透镜阵列。

78. 发明授权

US07160819B2 Method to perform selective atomic layer deposition of zinc oxide 有权
标题翻译：执行氧化锌选择性原子层沉积的方法
公开(公告)号：US07160819B2
公开(公告)日：2007-01-09
申请号：US11114862
申请日：2005-04-25
申请人： John F. Conley, Jr. , Yoshi Ono , David R. Evans
发明人： John F. Conley, Jr. , Yoshi Ono , David R. Evans
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/042 , C23C16/407 , C23C16/45525 , H01L21/0217 , H01L21/02175 , H01L21/02334 , H01L21/0234 , H01L21/3141
摘要： A method for selective ALD of ZnO on a wafer preparing a silicon wafer; patterning the silicon wafer with a blocking agent in selected regions where deposition of ZnO is to be inhibited, wherein the blocking agent is taken from a group of blocking agents includes isopropyl alcohol, acetone and deionized water; depositing a layer of ZnO on the wafer by ALD using diethyl zinc and H2O at a temperature of between about 140° C. to 170° C.; and removing the blocking agent from the wafer.
摘要翻译：在准备硅晶片的晶片上的ZnO的选择性ALD的方法; 在其中要抑制ZnO沉积的选定区域中用封闭剂对硅晶片进行图案化，其中封闭剂取自一组封闭剂，包括异丙醇，丙酮和去离子水; 在约140℃至170℃的温度下，使用二乙基锌和H 2 O 2，通过ALD在晶片上沉积ZnO层。并从晶片上除去封闭剂。

79. 发明授权

US06998317B2 Method of making a non-volatile memory using a plasma oxidized high-k charge-trapping layer 失效
标题翻译：使用等离子体氧化的高k电荷捕获层制造非易失性存储器的方法
公开(公告)号：US06998317B2
公开(公告)日：2006-02-14
申请号：US10741802
申请日：2003-12-18
申请人： Yoshi Ono
发明人： Yoshi Ono
IPC分类号： H01L21/00 , H01L21/336
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/105 , H01L27/11573
摘要： A method of fabricating a non-volatile memory device includes preparing a substrate; depositing a layer of HfO2 by atomic layer deposition; annealing the substrate and HfO2 layer in situ; exposing the HfO2 layer to a plasma discharge, thereby forming a charge-trapping layer; depositing a gate structure; and completing the memory device.
摘要翻译：一种制造非易失性存储器件的方法包括：制备衬底; 通过原子层沉积沉积一层HfO 2 O 2; 原位退火衬底和HfO 2层; 将HfO 2层暴露于等离子体放电，从而形成电荷捕获层; 沉积栅结构; 并完成存储设备。

80. 发明申请

US20050136586A1 Method of making a non-volatile memory using a plasma oxidized high-k charge-trapping layer 失效
标题翻译：使用等离子体氧化的高k电荷捕获层制造非易失性存储器的方法
公开(公告)号：US20050136586A1
公开(公告)日：2005-06-23
申请号：US10741802
申请日：2003-12-18
申请人： Yoshi Ono
发明人： Yoshi Ono
IPC分类号： H01L21/8234 , H01L21/28 , H01L21/316 , H01L21/336 , H01L21/8246 , H01L21/8247 , H01L27/088 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792 , H01L31/062
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/105 , H01L27/11573
摘要： A method of fabricating a non-volatile memory device includes preparing a substrate; depositing a layer of HfO2 by atomic layer deposition; annealing the substrate and HfO2 layer in situ; exposing the HfO2 layer to a plasma discharge, thereby forming a charge-trapping layer; depositing a gate structure; and completing the memory device.
摘要翻译：一种制造非易失性存储器件的方法包括：制备衬底; 通过原子层沉积沉积HfO 2层; 原位退火衬底和HfO 2层; 将HfO 2层暴露于等离子体放电，从而形成电荷捕获层; 沉积栅结构; 并完成存储设备。

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