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    • 73. 发明授权
    • Multi-hierarchical control system for controlling object motion with
smart matter
    • 用智能物体控制物体运动的多层次控制系统
    • US6039316A
    • 2000-03-21
    • US33792
    • 1998-03-02
    • Warren B. JacksonTad H. Hogg
    • Warren B. JacksonTad H. Hogg
    • B65H5/06B65H5/22B65H7/20B65H29/24G01K15/00
    • B65H7/20B65H5/066B65H5/228B65H2511/20B65H2513/40B65H2557/20
    • Embedded in a transport assembly are arrays of microelectromechanical devices for detecting and making adjustments for perceived changes in their environment. The arrays of sensors and actuators are tightly coupled to each other so that coordinated action of neighboring actuators minimizes the cumulative effort required to move the object. The sensors and actuators are controlled using a multi-hierarchical organization of computational elements. Each computational element in lower levels of the multi-hierarchy communicates with one or more higher level computational elements to define zones of control. An object moving along the transport assembly lies principally in the domain of at least one zone of control. As an object moves along the transport assembly, dominant control over the object moves along the transport with the object. Because the zones of control overlap, dominant control over an object smoothly transitions between groups of computational elements thereby minimizing discontinuities at control boundaries.
    • 嵌入在运输组件中的是微机电装置的阵列,用于检测和调整其感知到的环境变化。 传感器和致动器的阵列彼此紧密耦合,使得相邻致动器的协调动作使得移动物体所需的累积力最小化。 使用计算元件的多层次组织来控制传感器和致动器。 多层次较低级别的每个计算单元与一个或多个较高级别的计算单元进行通信,以定义控制区域。 沿着运输组件移动的物体主要位于至少一个控制区域的区域中。 当物体沿着运输组件移动时,物体上的主导控制沿物体的运输移动。 由于控制区重叠,所以对对象的显性控制在计算元件组之间平滑地转换,从而使控制边界处的不连续性最小化。
    • 74. 发明授权
    • Electronic device with recovery layer proximate to active layer
    • 具有靠近有源层的恢复层的电子设备
    • US5081513A
    • 1992-01-14
    • US662682
    • 1991-02-28
    • Warren B. JacksonMichael Hack
    • Warren B. JacksonMichael Hack
    • H01L21/322H01L29/32H01L29/84
    • H01L29/32H01L21/3221H01L29/84
    • An electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, the active layer being responsive to the application of stress upon the device by shifting its Fermi level from an equilibrium state within its mobility gap and the spontaneous creation of a surplus number of metastable defects in the mobility gap located in opposition to the shift in the Fermi level, and a recovery layer comprising a doped non-single crystal semiconductor layer positioned in proximity to the active layer and responsive to the application of stress upon the device by changing the number of active dopant atoms therein and thereby changing the charge in the recovery layer, for allowing the excess charge to spill over to the active layer for accelerating the return of the active layer to its equilibrium state.
    • 一种包括其中具有多个亚稳态缺陷的基本上本征的非单晶半导体活性层的电子器件,所述有源层响应于通过将其费米能级从其移动间隙内的平衡状态移位而对器件施加应力,并且 在与费米能级的偏移相对的移动性间隙中产生剩余数量的亚稳态缺陷的自发产生,以及包含位于活性层附近的掺杂非单晶半导体层的恢复层,并且响应于应用 通过改变其中的活性掺杂剂原子的数量来施加器件,从而改变恢复层中的电荷,从而允许过量电荷溢出到有源层,以加速有源层的返回到其平衡状态。