专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20120175719A1 X-Y ADDRESS TYPE SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译： X-Y地址型固态摄像装置及其制造方法
公开(公告)号：US20120175719A1
公开(公告)日：2012-07-12
申请号：US13396266
申请日：2012-02-14
申请人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
发明人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
IPC分类号： H01L31/0232
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/02164 , H01L31/0232 , H01L31/02327
摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
摘要翻译：在由CMOS图像传感器表示的XY地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧，并且可见从硅层的另一侧，即从与布线层相对的一侧（背面）吸入光。可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

72. 发明申请

US20110211101A1 Solid-state imaging element having image signal overflow path 有权
公开(公告)号：US20110211101A1
公开(公告)日：2011-09-01
申请号：US13067112
申请日：2011-05-10
申请人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
发明人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
IPC分类号： H04N5/335
CPC分类号： H04N5/363 , H01L27/14609 , H01L27/14612 , H01L27/14638 , H01L27/14643 , H04N3/1512 , H04N3/155 , H04N5/335 , H04N5/341 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/37457
摘要： Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a floating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.

73. 发明授权

US07687831B2 Solid state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07687831B2
公开(公告)日：2010-03-30
申请号：US10382058
申请日：2003-03-05
申请人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
发明人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
IPC分类号： H01L27/148 , H01L31/113 , H01L31/00 , H01L31/06
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.
摘要翻译：以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层1A的端部处产生的暗电流。此外，下层的第二P型半导体阱区9形成在从光电二极管PD后退的窄区域中，从而防止光电二极管PD的耗尽层受到阻碍，并且充分确保耗尽从而可以实现光电二极管PD的灵敏度的提高。

74. 发明授权

US07592644B2 X-Y address type solid state image pickup device and method of producing the same 有权
公开(公告)号：US07592644B2
公开(公告)日：2009-09-22
申请号：US10940554
申请日：2004-09-14
申请人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
发明人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
IPC分类号： H01L31/0328
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/02164 , H01L31/0232 , H01L31/02327
摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.

75. 发明授权

US07521656B2 Solid-state image pickup apparatus and control method thereof 有权
标题翻译：固态摄像装置及其控制方法
公开(公告)号：US07521656B2
公开(公告)日：2009-04-21
申请号：US11106302
申请日：2005-04-13
申请人： Toshinobu Sugiyama , Shinichi Yoshimura , Ryoji Suzuki , Kazuhiro Hoshino
发明人： Toshinobu Sugiyama , Shinichi Yoshimura , Ryoji Suzuki , Kazuhiro Hoshino
IPC分类号： H01L27/00
CPC分类号： H04N5/335 , H01L27/14609 , H04N5/374 , H04N5/3742
摘要： An arithmetic circuit, which is retained by each pixel in a conventional image sensor, is shared by each column. Signal processing circuits of different configurations are provided on signal transmission paths in an upward direction and a downward direction of a vertical signal line for extracting an image signal from each pixel, whereby image output processing and arithmetic processing are performed completely separately by the different circuit blocks. Thus, image quality of an actual image is improved and optimum design for arithmetic processing is made possible. Specifically, an I-V converter circuit unit, a CDS circuit unit and the like are provided on the image output side. A current mirror circuit unit, an analog memory array unit, a comparator unit, a bias circuit unit, a data latch unit, an output data bus unit and the like are provided on the arithmetic processing side.
摘要翻译：由常规图像传感器中的每个像素保留的算术电路由每列共享。不同配置的信号处理电路在垂直信号线的向上方向和下方的信号传输路径上提供，用于从每个像素提取图像信号，从而通过不同的电路块完全分别执行图像输出处理和运算处理。因此，改善了实际图像的图像质量，使得可以进行算术处理的最佳设计。具体地，在图像输出侧设置有I-V转换器电路单元，CDS电路单元等。算术处理侧设置电流镜电路单元，模拟存储器阵列单元，比较单元，偏置电路单元，数据锁存单元，输出数据总线单元等。

76. 发明申请

US20080284884A1 IMAGE SENSOR, ELECTRONIC APPARATUS, AND DRIVING METHOD OF ELECTRONIC APPARATUS 有权
标题翻译：图像传感器，电子设备和电子设备的驱动方法
公开(公告)号：US20080284884A1
公开(公告)日：2008-11-20
申请号：US12119825
申请日：2008-05-13
申请人： Eiji Makino , Takahiro Abiru , Ryoji Suzuki , Masahiro Itoh
发明人： Eiji Makino , Takahiro Abiru , Ryoji Suzuki , Masahiro Itoh
IPC分类号： H04N5/335
CPC分类号： H04N5/3591 , H04N5/345 , H04N5/3454 , H04N5/3532 , H04N5/37455
摘要： An image sensor that has a pixel array section in which pixels are arrayed in a two-dimensional manner in vertical and horizontal directions and that controls an exposure time of each pixel in a rolling shutter method is disclosed. The sensor includes control means for determining an electronic shutter occurrence number within one horizontal scanning period, which is the number of rows where electronic shutters are simultaneously performed in one horizontal scanning period, by an operation based on an address addition amount (P1, P2, P3, . . . , PN) when a vertical address movement amount of the pixel array section for every one horizontal scanning period in an exposure regulation shutter, which is an electronic shutter for regulating exposure, executed corresponding to electric charge reading in each pixel is expressed as repetition of the address addition amount (P1, P2, P3, . . . , PN).
摘要翻译：公开了一种图像传感器，其具有像素阵列部分，其中以垂直和水平方向上的二维方式排列像素，并且控制滚动快门方法中的每个像素的曝光时间。该传感器包括控制装置，用于通过基于地址添加量的操作，确定在一个水平扫描周期内的电子快门发生数，其是电子快门在一个水平扫描周期中同时执行的行数。当像素阵列的垂直地址移动量为1时，P 1，P 2，P 3，...，P N 3 N 在每个像素中对应于电荷读取执行的用于调节曝光的电子快门的曝光调节快门中的每一个水平扫描周期的部分表示为地址添加量的重复（P < ，P 3，P 3，N 3，...，P N N）。

77. 发明授权

US07449720B2 Epitaxial wafer for semiconductor light-emitting devices, and semiconductor light-emitting device 失效
标题翻译：用于半导体发光器件的外延晶片和半导体发光器件
公开(公告)号：US07449720B2
公开(公告)日：2008-11-11
申请号：US11105589
申请日：2005-04-14
申请人： Ryoji Suzuki , Akio Ohishi
发明人： Ryoji Suzuki , Akio Ohishi
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/30
摘要： An epitaxial wafer for semiconductor light-emitting devices has an n-type substrate, on which are sequentially formed an n-type cladding layer, an active layer, a p-type cladding layer having Mg as a p-type dopant, and a p-type cap layer. The p-type cap layer has at least two Mg-doped and Zn-doped layers that are formed sequentially from the substrate side.
摘要翻译：用于半导体发光器件的外延晶片具有n型衬底，依次形成n型覆层，有源层，具有Mg作为p型掺杂剂的p型覆层，p 型盖层。 p型覆盖层具有从衬底侧依次形成的至少两个Mg掺杂和Zn掺杂层。

78. 发明申请

US20080259278A1 Visual acuity testing apparatus 有权
标题翻译：视力检测仪器
公开(公告)号：US20080259278A1
公开(公告)日：2008-10-23
申请号：US12081479
申请日：2008-04-16
申请人： Noritsugu Nozawa , Yuichiro Kanazawa , Ryoji Suzuki
发明人： Noritsugu Nozawa , Yuichiro Kanazawa , Ryoji Suzuki
IPC分类号： A61B3/032
CPC分类号： A61B3/032
摘要： A visual acuity testing apparatus capable of performing visual acuity testing under substantially uniform conditions even when a test distance and an installation distance vary has a projection optical unit including a disk whereon a chart is placed, an illumination light source, and variable projection lenses which are moved so as to change an image-forming position and an image size of an image of the chart, an input unit into which an installation distance between the screen and the visual acuity testing apparatus and a test distance between the screen and an examinee are inputted, a projection lens driving unit which moves the variable projection lenses based on the installation distance and the test distance, and a light intensity adjusting unit which adjusts light intensity based on the installation distance and the test distance so that brightness of the chart image falls within a predetermined reference range.
摘要翻译：即使在测试距离和安装距离变化的情况下，能够在基本均匀的条件下进行视敏度测试的视力测试装置具有投影光学单元，其包括放置图表的盘，照明光源和可变投影透镜，移动以改变图像的图像形成位置和图像尺寸;输入单元，其中输入屏幕和视力测试装置之间的安装距离以及屏幕和受检者之间的测试距离，投影透镜驱动单元，其基于安装距离和测试距离移动可变投影透镜;以及光度调节单元，其基于安装距离和测试距离来调节光强度，使得图表图像的亮度落入预定的参考范围。

79. 发明申请

US20080210947A1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US20080210947A1
公开(公告)日：2008-09-04
申请号：US11824088
申请日：2007-06-29
申请人： Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
发明人： Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
IPC分类号： H01L27/14
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.
摘要翻译：提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。在固态成像装置中，在光电转换部的激活区域形成阱接触部。阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

80. 发明申请

US20080192133A1 SOLID-STATE IMAGING DEVICE AND IMAGE CAPTURE APPARATUS 有权
标题翻译：固态成像装置和图像捕获装置
公开(公告)号：US20080192133A1
公开(公告)日：2008-08-14
申请号：US12026596
申请日：2008-02-06
申请人： Takahiro Abiru , Ryoji Suzuki , Eiji Makino , Takayuki Usui
发明人： Takahiro Abiru , Ryoji Suzuki , Eiji Makino , Takayuki Usui
IPC分类号： H04N5/335
CPC分类号： H04N5/3594 , H04N5/3452 , H04N5/3532 , H04N5/3591
摘要： There is provided a solid-state imaging device having a pixel array section in which pixels including photoelectric conversion elements are arranged in a matrix form, and sweeping out unnecessary charges by setting a predetermined number, two or more, of adjacent rows or a predetermined number, two or more, of adjacent columns, in the pixel array section, to a single group, and by applying a shutter pulse in units of groups before storing signal charges, and sequentially reading the signal charges in the units of groups. In the solid-state imaging device, a pre-shutter pulse is applied to pixels belonging to at least a single row or a single column within a succeeding group and adjacent to a preceding group, prior to the shutter pulse, before a reading timing for the preceding group, to sweep out unnecessary charges stored in the pixels.
摘要翻译：提供了一种具有像素阵列部分的固态成像装置，其中包括光电转换元件的像素以矩阵形式布置，并且通过设置相邻行的预定数量，两个或更多个或预定数量来清除不必要的电荷，像素阵列部分中的两个或更多个相邻列，到单个组，并且在存储信号电荷之前通过以组为单位应用快门脉冲，并且以组为单位顺序读取信号电荷。在固态成像装置中，在快门脉冲之前，将预快门脉冲施加到属于后续组中的至少单行或单列的像素并且与先前组相邻的像素在对于前一组，以清除存储在像素中的不必要的费用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式