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    • 78. 发明授权
    • Laser processing method
    • 激光加工方法
    • US08703582B2
    • 2014-04-22
    • US13160062
    • 2011-06-14
    • Yoshinori Abe
    • Yoshinori Abe
    • H01L21/00H01L21/26H01L21/42H01L21/66
    • H01L33/0095B23K26/40B23K26/53B23K2101/40B23K2103/172B23K2103/50H01L21/268
    • An element-group formation substrate (20) having plural semiconductor light emitting elements (21) formed on a substrate front surface (11a) is sequentially irradiated with a laser beam (64) having a first output from a substrate back surface (11b) side in the y direction, and the laser beam (64) is sequentially collected to a part having a first depth D1 from the substrate back surface (11b), thereby forming a first modified region L1. The substrate (20) having the first modified region L1 formed therein is sequentially irradiated with the laser beam (64) having a third output (
    • 具有形成在基板前表面(11a)上的多个半导体发光元件(21)的元件组形成基板(20)从基板背面(11b)侧依次照射具有第一输出的激光束(64) 沿着y方向,从基板背面(11b)依次将激光束(64)收集到具有第一深度D1的部分,从而形成第一改质区域L1。 在其中形成有第一改质区域L1的基板(20)在y方向上从基板背面11b侧起第三输出(<第一输出)的激光束(64)依次照射, 64)从比第一深度D1浅的衬底背面(11b)顺序收集到具有第三深度D3的部分,从而形成第三改质区域L3。