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    • 71. 发明授权
    • Thin film transistor array panel and manufacturing method thereof
    • 薄膜晶体管阵列面板及其制造方法
    • US08455277B2
    • 2013-06-04
    • US13523767
    • 2012-06-14
    • Je-Hun LeeSung-Jin KimHee-Joon KimChang-Oh Jeong
    • Je-Hun LeeSung-Jin KimHee-Joon KimChang-Oh Jeong
    • H01L21/84
    • G02F1/13439G02F1/13458H01L27/12H01L27/124H01L29/458H01L29/4908
    • A thin film transistor array panel is provided, which includes a plurality of gate lines, a plurality of common electrodes, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer, a plurality of drain electrodes formed on the semiconductor layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes. Because the common electrodes are made of ITON, IZON, or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-a-ITO/a-ITON, when H2 or SiH4 are injected to form a silicon nitride (SiNX) layer on the common electrodes, the opaque metal Sn or Zn is not produced on the surfaces of the common electrode.
    • 提供薄膜晶体管阵列面板,其包括多个栅极线,多个公共电极,覆盖栅极线和公共电极的栅极绝缘层,形成在栅极绝缘层上的多个半导体层,多个 包括多个源电极并形成在半导体层上的数据线,形成在半导体层上的多个漏电极以及与公共电极重叠并连接到漏电极的多个像素电极。 由于公共电极由ITON,IZON或者-IONON制成,或者是将双重层的ITO / ITON,IZO / IZON或者a-ITO / a-ITON,当注入H 2或SiH 4以形成氮化硅时 SiNX)层,在公共电极的表面上不产生不透明金属Sn或Zn。
    • 76. 发明授权
    • Electrophoretic display device having improved color gamut
    • 具有改善的色域的电泳显示装置
    • US08179365B2
    • 2012-05-15
    • US12255900
    • 2008-10-22
    • Jeong-Kuk LeeSung-Jin KimJae-Byung ParkSon-Uk LeeSeul Lee
    • Jeong-Kuk LeeSung-Jin KimJae-Byung ParkSon-Uk LeeSeul Lee
    • G09G3/34
    • G09G3/344G09G2300/0426G09G2300/0452G09G2320/0242
    • An electrophoretic display device has a first substrate that defines a plurality of sub-pixel areas; with shaped pixel electrodes formed in the sub-pixel areas. A second substrate is attached in facing relation to the first substrate during mass production. The second substrate has color filters of different colors (e.g., R, G, B). The areas of the color filters are less than the areas of their corresponding sub-pixel electrodes so as to thereby avoid or reduce a color mixture effect that may arise from mass production misalignment between the first and second substrates. In one class of embodiments, area consumed by the color filters is less than about 75% but more than about 45% of area consumed by respective pixel areas. Each pixel area comprises a white (W) sub-pixel area in addition to the differently colored sub-pixel areas (e.g., R, G, B).
    • 电泳显示装置具有限定多个子像素区域的第一基板; 具有形成在子像素区域中的成形像素电极。 在批量生产期间,第二衬底面向第一衬底附接。 第二基板具有不同颜色(例如,R,G,B)的滤色器。 滤色器的面积小于其对应的子像素电极的面积,从而避免或减少可能由第一和第二基板之间的批量生产不对准而引起的混色效果。 在一类实施例中,滤色器消耗的面积小于相应像素区域消耗的面积的约75%,但大于约45%。 每个像素区域除了不同颜色的子像素区域(例如,R,G,B)之外还包括白色(W)子像素区域。
    • 77. 发明授权
    • Flat panel display device having an organic thin film transistor and method of manufacturing the same
    • 具有有机薄膜晶体管的平板显示装置及其制造方法
    • US08076733B2
    • 2011-12-13
    • US11526945
    • 2006-09-25
    • Hun-Jung LeeSung-Jin KimJong-Han Jeong
    • Hun-Jung LeeSung-Jin KimJong-Han Jeong
    • H01L27/088
    • H01L51/105H01L51/0545
    • Provided are an organic TFT that reduces contact resistance between a source and drain electrode and an organic semiconductor layer and that can be easily manufactured, a flat panel display device having the organic TFT, and methods of manufacturing the organic TFT and the flat panel display device having the same. The organic TFT includes; a substrate; a gate electrode and a blocking layer formed on the substrate; a gate insulating film covering the gate electrode and the blocking layer; a source electrode and a drain electrode located on the gate insulating film; an auxiliary source electrode and an auxiliary drain electrode respectively located on the source electrode and the drain electrode; and an organic semiconductor layer contacting the auxiliary source electrode and the auxiliary drain electrode.
    • 提供一种可降低源电极和漏电极与有机半导体层之间的接触电阻并且易于制造的有机TFT,具有有机TFT的平板显示装置以及制造有机TFT和平板显示装置的方法 有同样的 有机TFT包括: 底物; 形成在基板上的栅电极和阻挡层; 覆盖所述栅电极和所述阻挡层的栅极绝缘膜; 位于栅极绝缘膜上的源电极和漏电极; 分别位于源电极和漏电极上的辅助源电极和辅助漏电极; 以及与辅助源电极和辅助漏电极接触的有机半导体层。
    • 79. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US07842981B2
    • 2010-11-30
    • US12219415
    • 2008-07-22
    • Hong-Ji LeeSung-Jin Kim
    • Hong-Ji LeeSung-Jin Kim
    • H01L27/148
    • H01L21/823425H01L21/823437
    • A semiconductor device includes an active region extending along a first direction on a semiconductor substrate, the active region having a first sidewall and a second sidewall spaced apart and facing each other, a distance between the first and second sidewalls extending along a second direction, and a gate on the active region, the gate having a pair of body portions extending along the second direction and being spaced apart from each other, the second direction being perpendicular to the first direction, a head portion extending along the first direction to connect the body portions, the head portion overlapping a portion of the first sidewall, and a plurality of tab portions protruding from sidewalls of the body portions, the tab portions extending along the first direction and overlapping a portion of the second sidewall.
    • 半导体器件包括沿着半导体衬底上的第一方向延伸的有源区,所述有源区具有间隔开并面对彼此的第一侧壁和第二侧壁,所述第一和第二侧壁之间的距离沿着第二方向延伸,以及 在所述有源区域上的栅极,所述栅极具有沿着所述第二方向延伸并且彼此间隔开的一对主体部分,所述第二方向垂直于所述第一方向,头部部分沿着所述第一方向延伸以连接所述主体 所述头部与所述第一侧壁的一部分重叠,以及从所述主体部分的侧壁突出的多个突片部分,所述突出部分沿着所述第一方向延伸并与所述第二侧壁的一部分重叠。