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    • 75. 发明授权
    • Light emitting diode having electrode pads
    • 具有电极焊盘的发光二极管
    • US08541806B2
    • 2013-09-24
    • US12963921
    • 2010-12-09
    • Kyoung Wan KimJeong Hee YangYeo Jin Yoon
    • Kyoung Wan KimJeong Hee YangYeo Jin Yoon
    • H01L33/00
    • H01L33/38H01L33/20H01L33/382H01L33/44
    • The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
    • 本发明涉及一种发光二极管,包括基板,布置在基板上的第一导电型半导体层,布置在第一导电型半导体层上的第二导电型半导体层,设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层,电连接到第一导电类型半导体层的第一电极焊盘,布置在第一导电类型半导体层上的第二电极焊盘以及设置在第一导电类型半导体层和第二导电类型半导体层之间的绝缘层 所述绝缘层将所述第二电极焊盘与所述第一导电型半导体层绝缘。 至少一个上延伸部可以电连接到第二电极焊盘,所述至少一个上延伸部电连接到第二导电类型半导体层。
    • 76. 发明授权
    • Method of fabricating light emitting diode chip
    • 制造发光二极管芯片的方法
    • US08481352B2
    • 2013-07-09
    • US13089544
    • 2011-04-19
    • Jun Hee LeeJong Kyu KimYeo Jin Yoon
    • Jun Hee LeeJong Kyu KimYeo Jin Yoon
    • H01L21/304H01L27/15H01L33/00
    • H01L33/0095H01L33/20
    • The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.
    • 本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。 该方法包括以下步骤:制备基底; 在所述基板上层叠所述半导体层,所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽,直到基板被暴露,由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。 根据本发明的实施例,形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜,由此与没有倾斜的发光二极管芯片相比,其方向角度变宽。 随着发光二极管芯片的方位角变宽,当使用发光二极管芯片和荧光体制造白色发光器件时,即使荧光体不集中在器件的中心,也可以调整光均匀性。 因此,通过减少由分散在中心部分的荧光体的量增加引起的遮光现象,可以提高整体发光效率。