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71. 发明授权

US07439155B2 Isolation techniques for reducing dark current in CMOS image sensors 有权
标题翻译：用于降低CMOS图像传感器中的暗电流的隔离技术
公开(公告)号：US07439155B2
公开(公告)日：2008-10-21
申请号：US10925917
申请日：2004-08-26
申请人： Chandra Mouli , Howard Rhodes
发明人： Chandra Mouli , Howard Rhodes
IPC分类号： H01L21/76 , H01L21/762
CPC分类号： H01L27/1463 , H01L21/02381 , H01L21/02532 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L27/14601
摘要： Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive materials containing silicon include polysilicon and silicon-germanium. There is also provided a method and structure for isolating the regions by providing a trench in an active area of a substrate, growing an epitaxial layer in the trench to fill the trench or to partially fill the trench and depositing an insulating material over the epitaxial layer and within the trench to completely fill the trench.
摘要翻译：用于隔离半导体器件区域的隔离方法和装置。隔离方法和结构包括在有源区中形成隔离沟槽，并用含硅的掺杂导电材料填充沟槽。含硅的合适的导电材料包括多晶硅和硅 - 锗。还提供了通过在衬底的有源区域中提供沟槽来隔离区域的方法和结构，在沟槽中生长外延层以填充沟槽或部分地填充沟槽并在外延层上沉积绝缘材料并在沟槽内完全填满沟槽。

72. 发明申请

US20080042176A1 Method for making image sensor with reduced etching damage 审中-公开
标题翻译：制造具有减少蚀刻损伤的图像传感器的方法
公开(公告)号：US20080042176A1
公开(公告)日：2008-02-21
申请号：US11975637
申请日：2007-10-18
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14643
摘要： A method of forming a pixel of an image sensor with reduced etching damage is disclosed. The method first includes forming a light sensitive element in a substrate. Then, a transfer gate is formed atop the substrate and adjacent to the light sensitive element. A protective layer, such as an anti-reflective coating, is then formed over the light sensitive element. A blanket oxide layer is formed over the protective layer and the transfer gate. Finally, the oxide layer is etched back to form a sidewall spacer the sidewall of a gate stack. The protective layer protects the surface of the light sensitive element from etching damage.
摘要翻译：公开了一种以减少的蚀刻损伤形成图像传感器的像素的方法。该方法首先包括在基板中形成光敏元件。然后，在基板顶上形成传送门并与光敏元件相邻。然后在光敏元件上形成保护层，例如抗反射涂层。覆盖氧化层形成在保护层和传输栅上。最后，氧化层被回蚀以形成侧壁间隔物，栅极叠层的侧壁。保护层保护光敏元件的表面免受蚀刻损伤。

73. 发明申请

US20070145512A1 Photogate stack with nitride insulating cap over conductive layer 有权
标题翻译：光栅叠层与导电层上的氮化物绝缘帽
公开(公告)号：US20070145512A1
公开(公告)日：2007-06-28
申请号：US11710987
申请日：2007-02-27
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L31/06
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1462 , H01L27/14643 , H01L27/14689 , H01L31/02161 , H01L31/1136
摘要： A photogate structure having increased quantum efficiency, especially for low wavelength light such as blue light. The photogate is formed of a thin conductive layer, such as a layer of doped polysilicon. A nitride insulating cap is formed over the conductive layer. The nitride layer reduces the reflections at the conductor/insulator interface. A pixel cell incorporating the photogate structure also has a buried accumulation region beneath the photogate. A method of fabricating the photogate structure is also disclosed.
摘要翻译：具有提高的量子效率的光门结构，特别是对于诸如蓝光的低波长光。光栅由诸如掺杂多晶硅层的薄导电层形成。在导电层上形成氮化物绝缘帽。氮化物层减少了导体/绝缘体界面处的反射。结合光栅结构的像素单元还具有在光栅下方的掩埋积聚区域。还公开了制造光栅结构的方法。

74. 发明申请

US20070072325A1 Self-aligned photodiode for CMOS image sensor and method of making 有权
标题翻译： CMOS图像传感器的自对准光电二极管及其制作方法
公开(公告)号：US20070072325A1
公开(公告)日：2007-03-29
申请号：US11235823
申请日：2005-09-27
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14643
摘要： A method for forming a photodiode that is self-aligned to a transfer gate while being compatible with a metal silicide process is disclosed. The method comprises forming a gate stack of gate oxide, polysilicon, and a sacrificial/disposable cap insulator over the polysilicon. The insulator may be a combination of silicon oxynitride and silicon dioxide. After formation of the photodiode, the cap insulator layer is removed.
摘要翻译：公开了一种在与金属硅化物工艺相容的同时形成与转移栅极自对准的光电二极管的方法。该方法包括在多晶硅上形成栅极氧化物，多晶硅和牺牲/一次性帽绝缘体的栅极堆叠。绝缘体可以是氮氧化硅和二氧化硅的组合。在形成光电二极管之后，去除盖绝缘体层。

75. 发明申请

US20070051989A1 Trench photosensor for a CMOS imager 有权
标题翻译：用于CMOS成像器的沟槽光电传感器
公开(公告)号：US20070051989A1
公开(公告)日：2007-03-08
申请号：US11593589
申请日：2006-11-07
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L31/113
CPC分类号： H01L27/14603 , H01L27/14601 , H01L27/14643 , H01L27/14689
摘要： A trench photosensor for use in a CMOS imager having an improved charge capacity. The trench photosensor may be either a photogate or photodiode structure. The trench shape of the photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the trench photosensor.
摘要翻译：一种用于具有改进的充电容量的CMOS成像器中的沟道光电传感器。沟道光电传感器可以是光栅或光电二极管结构。光电传感器的沟槽形状与在基片上占据可比区域的平面光电传感器相比，提供了增加的表面积。沟道光电传感器还具有更高的充电容量，改善的动态范围和更好的信噪比。还公开了用于形成沟槽光电传感器的工艺。

76. 发明申请

US20070029469A1 CMOS imaging for ALC and CDS 有权
公开(公告)号：US20070029469A1
公开(公告)日：2007-02-08
申请号：US11442136
申请日：2006-05-30
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L27/00
CPC分类号： H01L27/14627 , H01L27/1462 , H01L27/14806 , H01L27/14887 , H04N5/3535 , H04N5/37457
摘要： Embodiments of the invention provide pixel cells that allow both automatic light control and correlated double sampling operations. The pixel cell includes first and second photo-conversion devices that can be separately read out. For example, the second photo-conversion device can be the pixel cells' floating diffusion region, with an area and doping profile suitable for photo-conversion. An image sensor may include an array of pixel cells, some or all of which have two photo-conversion devices, and peripheral circuitry for reading out signals from the pixel cells. The image sensor's readout circuitry may monitor charge generated by the second photo-conversion devices to determine when to read out signals from the first photo-conversion devices.

77. 发明申请

US20070018264A1 Optimized image sensor process and structure to improve blooming 审中-公开
标题翻译：优化图像传感器的工艺和结构，提高开花度
公开(公告)号：US20070018264A1
公开(公告)日：2007-01-25
申请号：US11210996
申请日：2005-08-24
申请人： Howard Rhodes , Hidetoshi Nozaki , Sohei Manabe , Hsin-chih Tai , Satyadev Nagaraja , Ashish Shah , William Qian , Hongli Yang , Tiejun Dai
发明人： Howard Rhodes , Hidetoshi Nozaki , Sohei Manabe , Hsin-chih Tai , Satyadev Nagaraja , Ashish Shah , William Qian , Hongli Yang , Tiejun Dai
IPC分类号： H01L31/0232
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14654
摘要： An image sensor that has a pixel array using an isolation structure between pixels that reduce electrical cross-talk is disclosed. The pixel array is formed on a substrate that has a thin (less than 5 microns) epitaxial layer. The isolation structure uses a deep p-well to surround a shallow trench isolation. The deep p-well is formed using an implant energy of typically over 700 keV.
摘要翻译：公开了一种使用减少电串扰的像素之间的隔离结构的像素阵列的图像传感器。像素阵列形成在具有薄（小于5微米）外延层的衬底上。隔离结构使用深p阱来围绕浅沟槽隔离。使用典型地超过700keV的注入能量形成深p阱。

78. 发明申请

US20070013018A1 Imaging device and method of manufacture 审中-公开
公开(公告)号：US20070013018A1
公开(公告)日：2007-01-18
申请号：US11526722
申请日：2006-09-26
申请人： Howard Rhodes , Edward Heitzeberg
发明人： Howard Rhodes , Edward Heitzeberg
IPC分类号： H01L31/0203
CPC分类号： H01L31/0203 , H01L27/14618 , H01L27/14625 , H01L27/14683 , H01L2924/0002 , H01L2924/00
摘要： An imaging chip is packaged in transparent injection molded material. The chip may have photosensitive elements arranged in a two-dimensional array on semiconductor material. Each element corresponds to a pixel of an image. The package may be formed of epoxy resin. In one aspect of the invention, the transparent plastic material provides a color filter. Second and third packages with complementary color filters may be used to provide signals for a color imaging system. In another aspect of the invention, a lens is integrated into the plastic package. In another aspect of the invention, a semiconductor chip is applied to a pre-formed plastic package by bump bonding.

79. 发明申请

US20070001094A1 Infrared filter for imagers 审中-公开
标题翻译：用于成像器的红外滤光片
公开(公告)号：US20070001094A1
公开(公告)日：2007-01-04
申请号：US11168759
申请日：2005-06-29
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L27/00
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14645 , H01L31/101
摘要： Imaging devices with an infrared filter over a surface of the substrate and methods for forming the same are provided. The imager includes a plurality of pixels supported by the substrate. Each pixel includes a photosensor. The imager may also include a plurality of micro-lenses and a color filter array with a plurality of filters, each filter being dedicated to a respective micro-lens. Over the substrate is an infrared filter for inhibiting the passage of infrared radiation to the photosensors.
摘要翻译：提供了在基板的表面上具有红外滤光器的成像装置及其形成方法。成像器包括由衬底支撑的多个像素。每个像素包括光电传感器。成像器还可以包括多个微透镜和具有多个滤光器的滤色器阵列，每个滤光器专用于相应的微透镜。在衬底上是用于抑制红外辐射通向光电传感器的红外滤光器。

80. 发明申请

US20060273352A1 CMOS imager pixel designs 有权
公开(公告)号：US20060273352A1
公开(公告)日：2006-12-07
申请号：US11488845
申请日：2006-07-19
申请人： Howard Rhodes , Jeff McKee
发明人： Howard Rhodes , Jeff McKee
IPC分类号： H01L27/148
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609
摘要： A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.

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