专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20070235811A1 Simultaneous conditioning of a plurality of memory cells through series resistors 审中-公开
标题翻译：通过串联电阻同时调节多个存储单元
公开(公告)号：US20070235811A1
公开(公告)日：2007-10-11
申请号：US11400596
申请日：2006-04-07
申请人： Toshijaru Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Chung Lam , Gerhard Meijer
发明人： Toshijaru Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Chung Lam , Gerhard Meijer
IPC分类号： H01L21/336
CPC分类号： H01L27/0629 , H01L27/101 , H01L27/24
摘要： Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.
摘要翻译：公开了一种半导体结构和方法，其允许在具有多个存储器单元的非易失性存储器件中同时对多个存储器元件进行电压/电流调节。该结构和方法结合使用与存储器元件串联连接的电阻器来限制电流通过存储器元件。具体地，该方法和结构在存储器单元上方的晶片表面上和/或存储器单元内的永久串联电阻器上并入一个橡皮布暂时串联电阻器。在调节过程中，一旦调节了这些电阻，这些电阻就可以保护各个存储元件中的过渡金属氧化物免受损坏（即烧坏）。

72. 发明申请

US20070212810A1 MEMORY DEVICE AND METHOD OF MANUFACTURING THE DEVICE BY SIMULTANEOUSLY CONDITIONING TRANSITION METAL OXIDE LAYERS IN A PLURALITY OF MEMORY CELLS 有权
标题翻译：存储器件和通过在大量存储器单元中同时调节过渡金属氧化物层来制造器件的方法
公开(公告)号：US20070212810A1
公开(公告)日：2007-09-13
申请号：US11748579
申请日：2007-05-15
申请人： Toshijaru Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Chung Lam , Gerhard Meijer
发明人： Toshijaru Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Chung Lam , Gerhard Meijer
IPC分类号： H01L21/00
CPC分类号： H01L27/101 , H01L27/115 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147 , Y10S438/90
摘要： Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.
摘要翻译：公开了包含一系列单个或双重存储器单元的非易失性存储器件。单个存储器单元基本上是“U”形的。双重存储单元包括两个基本上“U”形的存储单元。每个存储单元包括具有夹在两个导电层之间的双稳态层的存储元件。临时导体可以应用于一系列的电池并且用于批量地调节电池的双稳态层。此外，由于电池的“U”形状，可以使用交叉点线阵列来连接一系列电池。交叉点线阵列允许每个单元的存储元件被单独识别和寻址用于存储信息，并且还允许使用块擦除处理同时擦除存储在串联中的所有单元中的存储器元件中的信息。

73. 发明申请

US20070296947A1 Immersion optical lithography system having protective optical coating 失效
标题翻译：具有保护性光学涂层的浸没光学光刻系统
公开(公告)号：US20070296947A1
公开(公告)日：2007-12-27
申请号：US11899085
申请日：2007-09-04
申请人： Steven Holmes , Toshiharu Furukawa , Charles Koburger , Naim Moumen
发明人： Steven Holmes , Toshiharu Furukawa , Charles Koburger , Naim Moumen
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/70341 , G03F7/70958
摘要： An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.
摘要翻译：提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。光学成像系统具有从光源到待图案化的制品的光路中的光学元件。光学元件具有适于接触占据面部和制品之间的空间的液体的面。光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时暴露于液体。

74. 发明申请

US20070076179A1 IMMERSION OPTICAL LITHOGRAPHY SYSTEM HAVING PROTECTIVE OPTICAL COATING 失效
标题翻译：具有保护光学涂层的光学光刻系统
公开(公告)号：US20070076179A1
公开(公告)日：2007-04-05
申请号：US11163007
申请日：2005-09-30
申请人： Steven Holmes , Toshiharu Furukawa , Charles Koburger III , Naim Moumen
发明人： Steven Holmes , Toshiharu Furukawa , Charles Koburger III , Naim Moumen
IPC分类号： G03B27/42
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/70341 , G03F7/70958
摘要： An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.
摘要翻译：提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。光学成像系统具有从光源到待图案化的制品的光路中的光学元件。光学元件具有适于接触占据面部和制品之间的空间的液体的面。光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时暴露于液体。

75. 发明申请

US20060275706A1 Immersion lithography contamination gettering layer 失效
标题翻译：浸没光刻污染吸气层
公开(公告)号：US20060275706A1
公开(公告)日：2006-12-07
申请号：US11144857
申请日：2005-06-03
申请人： Daniel Corliss , Dario Gil , Dario Goldfarb , Steven Holmes , David Horak , Kurt Kimmel , Karen Petrillo , Dmitriy Shneyder
发明人： Daniel Corliss , Dario Gil , Dario Goldfarb , Steven Holmes , David Horak , Kurt Kimmel , Karen Petrillo , Dmitriy Shneyder
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/162
摘要： A method of forming an image in a photoresist layer. The method includes, providing a substrate; forming the photoresist layer over the substrate; forming a contamination gettering topcoat layer over the photoresist layer, the contamination gettering topcoat layer including one or more polymers and one or more cation complexing agents; exposing the photoresist layer to actinic radiation through a photomask having opaque and clear regions, the opaque regions blocking the actinic radiation and the clear regions being transparent to the actinic radiation, the actinic radiation changing the chemical composition of regions of the photoresist layer exposed to the radiation forming exposed and unexposed regions in the photoresist layer; and removing either the exposed regions of the photoresist layer or the unexposed regions of the photoresist layer. The contamination gettering topcoat layer includes one or more polymers, one or more cation complexing agents and a casting solvent.
摘要翻译：在光致抗蚀剂层中形成图像的方法。该方法包括提供基板; 在衬底上形成光致抗蚀剂层; 在光致抗蚀剂层上形成污染吸气顶涂层，吸收顶涂层的污染物包括一种或多种聚合物和一种或多种阳离子络合剂; 将光致抗蚀剂层暴露于通过具有不透明和透明区域的光掩模的光化辐射，不透明区域阻挡光化辐射，透明区域对于光化辐射是透明的，光化辐射改变曝光于光致抗蚀剂层的光致抗蚀剂层的区域的化学组成在光致抗蚀剂层中形成曝光和未曝光区域的辐射; 以及去除光致抗蚀剂层的曝光区域或光致抗蚀剂层的未曝光区域。污染吸附顶涂层包括一种或多种聚合物，一种或多种阳离子络合剂和流延溶剂。

76. 发明申请

US20070063392A1 MICROELECTRONIC SUBSTRATE HAVING REMOVABLE EDGE EXTENSION ELEMENT 有权
标题翻译：具有可移除边缘延伸元件的微电子基板
公开(公告)号：US20070063392A1
公开(公告)日：2007-03-22
申请号：US11162765
申请日：2005-09-22
申请人： Charles Koburger III , Steven Holmes , David Horak , Kurt Kimmel , Karen Petrillo , Christopher Robinson
发明人： Charles Koburger III , Steven Holmes , David Horak , Kurt Kimmel , Karen Petrillo , Christopher Robinson
IPC分类号： B29C35/08
CPC分类号： G03F7/70691 , G03F7/70341 , G03F7/70808
摘要： An article including a microelectronic substrate is provided as an article usable during the processing of the microelectronic substrate. Such article includes a microelectronic substrate having a front surface, a rear surface opposite the front surface and a peripheral edge at boundaries of the front and rear surfaces. The front surface is a major surface of the article. A removable annular edge extension element having a front surface, a rear surface and an inner edge extending between the front and rear surfaces has the inner edge joined to the peripheral edge of the microelectronic substrate. In such way, a continuous surface is formed which includes the front surface of the edge extension element and the front surface of the microelectronic substrate, the continuous surface being substantially co-planar and flat where the peripheral edge is joined to the inner edge.
摘要翻译：提供包括微电子衬底的制品作为在微电子衬底的处理期间可用的制品。这种物品包括具有前表面，与前表面相对的后表面和在前表面和后表面的边界处的周边边缘的微电子基底。前表面是物品的主要表面。具有前表面，后表面和在前表面和后表面之间延伸的内边缘的可拆卸的环形边缘延伸元件具有接合到微电子基板的周边边缘的内边缘。以这种方式，形成连续表面，其包括边缘延伸元件的前表面和微电子基底的前表面，连续表面基本上共平面且平坦，其中周缘连接到内边缘。

77. 发明申请

US20080009142A1 EVAPORATION CONTROL USING COATING 审中-公开
标题翻译：使用涂料进行蒸发控制
公开(公告)号：US20080009142A1
公开(公告)日：2008-01-10
申请号：US11856919
申请日：2007-09-18
申请人： Daniel Corliss , Darlo Goldfarb , Steven Holmes , Kurt Kimmel , Michael Lercel
发明人： Daniel Corliss , Darlo Goldfarb , Steven Holmes , Kurt Kimmel , Michael Lercel
IPC分类号： H01L21/31
CPC分类号： G03F7/2041 , G03F7/70341 , Y10T428/12542 , Y10T428/31663
摘要： A novel arrangement and method for depositing evaporation control agents so as to coat immersion lithographic solutions which are employed on the surface of semiconductor wafers in connection with the etching of the surfaces of the wafer through the intermediary of an immersion lithographic process.
摘要翻译：一种用于沉积蒸发控制剂的新颖的布置和方法，以便通过介于浸没式光刻工艺的介质蚀刻半导体晶片的表面来涂覆浸没式光刻溶液。

78. 发明申请

US20070034605A1 EVAPORATION CONTROL USING COATING 有权
标题翻译：使用涂料进行蒸发控制
公开(公告)号：US20070034605A1
公开(公告)日：2007-02-15
申请号：US11161630
申请日：2005-08-10
申请人： Daniel Corliss , Dario Goldfarb , Steven Holmes , Kurt Kimmel , Michael Lercel
发明人： Daniel Corliss , Dario Goldfarb , Steven Holmes , Kurt Kimmel , Michael Lercel
IPC分类号： B44C1/22 , H01L21/306 , C23F1/00
CPC分类号： G03F7/2041 , G03F7/70341 , Y10T428/12542 , Y10T428/31663
摘要： A novel arrangement and method for depositing evaporation control agents so as to coat immersion lithographic solutions which are employed on the surface of semiconductor wafers in connection with the etching of the surfaces of the wafer through the intermediary of an immersion lithographic process.
摘要翻译：一种用于沉积蒸发控制剂的新颖的布置和方法，以便通过介于浸没式光刻工艺的介质蚀刻半导体晶片的表面来涂覆浸没式光刻溶液。

79. 发明申请

US20070059894A1 SELECTIVE DEPOSITION OF GERMANIUM SPACERS ON NITRIDE 失效
标题翻译：硝酸盐选择性沉积氮离子
公开(公告)号：US20070059894A1
公开(公告)日：2007-03-15
申请号：US10905587
申请日：2005-09-12
申请人： Ashima Chakravarti , Anthony Chou , Toshiharu Furukawa , Steven Holmes , Wesley Natzle
发明人： Ashima Chakravarti , Anthony Chou , Toshiharu Furukawa , Steven Holmes , Wesley Natzle
IPC分类号： H01L21/336 , H01L21/44 , H01L21/20
CPC分类号： H01L29/7833 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/02639 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L2224/05571 , H01L2224/05573 , H01L2224/10126 , H01L2224/13023 , H01L2924/1305 , H01L2924/00
摘要： A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.
摘要翻译：在半导体制造工艺中选择性地形成锗结构的方法在化学氧化物去除（COR）工艺中从氮化物表面去除天然氧化物，然后将加热的氮化物和氧化物表面暴露于加热的含锗气体，以仅选择性地形成锗氮化物表面而不是氧化物表面。

80. 发明申请

US20050148144A1 Selective post-doping of gate structures by means of selective oxide growth 失效
标题翻译：通过选择性氧化物生长选择性地掺杂栅极结构
公开(公告)号：US20050148144A1
公开(公告)日：2005-07-07
申请号：US10732657
申请日：2003-12-10
申请人： Anthony Chou , Toshiharu Furukawa , Steven Holmes
发明人： Anthony Chou , Toshiharu Furukawa , Steven Holmes
IPC分类号： H01L21/266 , H01L21/316 , H01L21/336 , H01L21/8238 , H01L29/78
CPC分类号： H01L29/6659 , H01L21/02131 , H01L21/02164 , H01L21/02282 , H01L21/02304 , H01L21/266 , H01L21/316 , H01L21/31612 , H01L21/823814 , H01L21/823842 , H01L21/823864 , H01L29/665 , H01L29/6656 , H01L29/7833
摘要： A method for doping a polysilicon gate conductor, without implanting the substrate in a manner that would effect source/drain formation is provided. The inventive method comprises forming at least one polysilicon gate region atop a substrate; forming oxide seed spacers abutting the polysilicon gate; forming source/drain oxide spacers selectively deposited on the oxide seed spacers by liquid phase deposition, and implanting at least one polysilicon gate region, wherein the source/drain oxide spacers protect an underlying portion of the substrate. Multiple gate regions may be processed on a single substrate using conventional patterning. A block-mask provided by patterned photoresist can be used prior to implantation to pre-select the substrate area for gate conductor doping with one dopant type.
摘要翻译：提供了掺杂多晶硅栅极导体而不以将影响源极/漏极形成的方式植入衬底的方法。本发明的方法包括在基板顶上形成至少一个多晶硅栅极区域; 形成邻接所述多晶硅栅极的氧化物种子间隔物; 通过液相沉积选择性地沉积在氧化物种间隔物上的源极/漏极氧化物间隔区，以及注入至少一个多晶硅栅极区域，其中源极/漏极氧化物间隔物保护衬底的下面部分。可以使用常规图案化在单个基板上处理多个栅极区域。在植入之前可以使用由图案化的光致抗蚀剂提供的块掩模，以预先选择用于掺杂一种掺杂剂类型的栅极导体的衬底区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式