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71. 发明授权

US08884845B2 Display device and telecommunication system 有权
标题翻译：显示设备和电信系统
公开(公告)号：US08884845B2
公开(公告)日：2014-11-11
申请号：US10952163
申请日：2004-09-29
申请人： Shunpei Yamazaki , Keisuke Miyagawa
发明人： Shunpei Yamazaki , Keisuke Miyagawa
IPC分类号： G09G5/00 , G02B27/01 , G01C21/36 , G09G3/32 , H04N5/74
CPC分类号： G02B27/0172 , G01C21/365 , G02B27/017 , G02B2027/0112 , G02B2027/0132 , G02B2027/014 , G02B2027/0178 , G09G3/3225 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , H04N5/7491
摘要： The invention provides a display device with which a user's view is not completely interrupted by an image that is displayed artificially and of which optical system is easy in design. In addition, the invention provides a telecommunication system capable of providing additional visual information by the use of the display device. According to the invention, an image can be displayed while securing a user's view by using a light emitting device that can display an image and transmit light as a display device. Specifically, a pair of electrodes included in a light emitting element is formed to transmit light so as to transmit the outside light. By crossing a visual axis of a user and a pixel portion of the light emitting device, both of the outside light and the light emitted from the pixel portion can enter into the eyeballs of a user.
摘要翻译：本发明提供了一种显示装置，用户的视野不被人为地显示的图像完全中断，并且哪个光学系统在设计上容易。此外，本发明提供一种能够通过使用显示装置提供附加视觉信息的电信系统。根据本发明，可以通过使用可以显示图像并发送光作为显示装置的发光装置来确保用户的视野来显示图像。具体地，形成发光元件中包括的一对电极以透射光以透射外部光。通过横穿用户的视轴和发光器件的像素部分，外部光和从像素部分发射的光都可以进入用户的眼球。

72. 发明授权

US08860108B2 Oxide-based thin-film transistor (TFT) semiconductor memory device having source/drain electrode of one transistor connected to gate electrode of the other 有权
标题翻译：具有一个晶体管的源极/漏极的另一个的栅电极的基于氧化物的薄膜晶体管（TFT）半导体存储器件
公开(公告)号：US08860108B2
公开(公告)日：2014-10-14
申请号：US12912190
申请日：2010-10-26
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/088 , G11C11/404 , G11C11/405 , G11C16/02 , H01L27/0207 , H01L27/1052 , H01L27/115 , H01L27/11517 , H01L27/1156 , H01L27/1225
摘要： It is an object to provide a semiconductor having a novel structure. In the semiconductor device, a plurality of memory elements are connected in series and each of the plurality of memory elements includes first to third transistors thus forming a memory circuit. A source or a drain of a first transistor which includes an oxide semiconductor layer is in electrical contact with a gate of one of a second and a third transistor. The extremely low off current of a first transistor containing the oxide semiconductor layer allows storing, for long periods of time, electrical charges in the gate electrode of one of the second and the third transistor, whereby a substantially permanent memory effect can be obtained. The second and the third transistors which do not contain an oxide semiconductor layer allow high-speed operations when using the memory circuit.
摘要翻译：本发明的目的是提供具有新颖结构的半导体。在半导体器件中，多个存储器元件串联连接，并且多个存储元件中的每一个包括第一至第三晶体管，从而形成存储器电路。包括氧化物半导体层的第一晶体管的源极或漏极与第二和第三晶体管之一的栅极电接触。含有氧化物半导体层的第一晶体管的极低的截止电流允许长时间地在第二和第三晶体管之一的栅电极中存储电荷，由此可以获得基本上永久的记忆效应。不含氧化物半导体层的第二和第三晶体管在使用存储电路时允许高速操作。

73. 发明授权

US08860030B2 Thin film transistor and display device including the same 有权
标题翻译：薄膜晶体管和包括其的显示装置
公开(公告)号：US08860030B2
公开(公告)日：2014-10-14
申请号：US13166871
申请日：2011-06-23
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/06 , H01L29/10 , H01L31/00 , H01L29/786 , H01L29/49 , H01L27/12 , H01L29/45
CPC分类号： H01L29/78684 , H01L27/1214 , H01L27/1288 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： One object of the present invention is reduction of off current of a thin film transistor. Another object of the present invention is improvement of electric characteristics of the thin film transistor. Further, another object of the present invention is improvement of image quality of the display device including the thin film transistor. The thin film transistor includes a semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or a conductive film which is provided over a gate electrode with the gate insulating film interposed therebetween and which is provided in an inner region of the gate electrode so as not to overlap with an end portion of the gate electrode, a film covering at least a side surface of the semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or the conductive film, a pair of wirings formed over the film covering the side surface of the semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or the conductive film.
摘要翻译：本发明的一个目的是减少薄膜晶体管的截止电流。本发明的另一个目的是提高薄膜晶体管的电特性。此外，本发明的另一个目的是提高包括薄膜晶体管的显示装置的图像质量。该薄膜晶体管包括含有浓度大于或等于5atm的锗的半导体膜。％且小于或等于100at。％或导电膜，其设置在栅极电极上，栅极绝缘膜介于其间并且设置在栅电极的内部区域中，以便不与栅电极的端部重叠，至少覆盖膜该半导体膜的侧表面含有浓度大于或等于5atm的锗。％且小于或等于100at。％或导电膜，形成在覆盖半导体膜的侧面的膜上的一对布线，该半导体膜含有浓度大于或等于5at 3的锗。％且小于或等于100at。％或导电膜。

74. 发明授权

US08854593B2 Electro-optical device 有权
标题翻译：电光装置
公开(公告)号：US08854593B2
公开(公告)日：2014-10-07
申请号：US13278219
申请日：2011-10-21
申请人： Yoshiharu Hirakata , Takeshi Nishi , Shunpei Yamazaki
发明人： Yoshiharu Hirakata , Takeshi Nishi , Shunpei Yamazaki
IPC分类号： G02F1/1339 , H01L27/12 , G02F1/1345
CPC分类号： G02F1/13454 , G02F1/1339 , H01L27/12 , H01L27/1214 , H01L27/1248
摘要： In an active matrix semiconductor display device in which pixel TFTs and driver circuit TFT are formed on the same substrate in an integral manner, the cell gap is controlled by gap retaining members that are disposed between a pixel area and driver circuit areas. This makes it possible to provide a uniform cell thickness profile over the entire semiconductor display device. Further, since conventional grainy spacers are not used, stress is not imposed on the driver circuit TFTs when a TFT substrate and an opposed substrate are bonded together. This prevents the driver circuit TFTs from being damaged.
摘要翻译：在其中像素TFT和驱动电路TFT以整体方式形成在同一基板上的有源矩阵半导体显示装置中，通过设置在像素区域和驱动电路区域之间的间隙保持构件来控制单元间隙。这使得可以在整个半导体显示装置上提供均匀的电池厚度分布。此外，由于不使用常规的颗粒状间隔物，当TFT基板和相对的基板接合在一起时，驱动电路TFT不施加应力。这防止驱动电路TFT被损坏。

75. 发明授权

US08847220B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08847220B2
公开(公告)日：2014-09-30
申请号：US13543109
申请日：2012-07-06
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A semiconductor device including an oxide semiconductor can have stable electric characteristics and high reliability. A transistor in which an oxide semiconductor layer containing indium, titanium, and zinc is used as a channel formation region and a semiconductor device including the transistor are provided. As a buffer layer in contact with the oxide semiconductor layer, a metal oxide layer containing an oxide of one or more elements selected from titanium, aluminum, gallium, zirconium, hafnium, and a rare earth element can be used.
摘要翻译：包括氧化物半导体的半导体器件可以具有稳定的电特性和高可靠性。使用其中含有铟，钛和锌的氧化物半导体层用作沟道形成区域的晶体管和包括晶体管的半导体器件。作为与氧化物半导体层接触的缓冲层，可以使用含有选自钛，铝，镓，锆，铪和稀土元素中的一种或多种元素的氧化物的金属氧化物层。

76. 发明授权

US08835918B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08835918B2
公开(公告)日：2014-09-16
申请号：US13608039
申请日：2012-09-10
申请人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1218 , H01L27/1225
摘要： To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer.
摘要翻译：为了提供包括氧化物半导体并且能够高速运行的晶体管或包括晶体管的高度可靠的半导体器件，提供了包括一对低电阻区域和沟道形成区域的氧化物半导体层的晶体管在基底绝缘层上嵌入并且其上表面至少部分地从基底绝缘层露出的电极层上，并且设置在氧化物半导体层上方的布线层电连接到电极层或电极层的一部分氧化物半导体层的低电阻区域与电极层重叠。

77. 发明授权

US08835214B2 Sputtering target and method for manufacturing semiconductor device 有权
标题翻译：溅射靶和制造半导体器件的方法
公开(公告)号：US08835214B2
公开(公告)日：2014-09-16
申请号：US13221252
申请日：2011-08-30
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L21/16 , H01L29/66 , C23C14/34 , H01L29/786 , C23C14/08
CPC分类号： C23C14/3414 , C23C14/081 , C23C14/086 , H01L21/02565 , H01L21/02631 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited.
摘要翻译：目的在于提供一种用于沉积氧化物半导体膜的沉积技术。另一个目的是提供一种使用氧化物半导体膜制造高可靠性半导体元件的方法。使用通过除去用于沉积的溅射靶中杂质的碱金属，碱土金属和氢来获得的新的溅射靶，由此可以沉积含有少量这些杂质的氧化物半导体膜。

78. 发明授权

US08828794B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08828794B2
公开(公告)日：2014-09-09
申请号：US13413684
申请日：2012-03-07
申请人： Shunpei Yamazaki , Yuhei Sato , Keiji Sato , Tetsunori Maruyama , Junichi Koezuka
发明人： Shunpei Yamazaki , Yuhei Sato , Keiji Sato , Tetsunori Maruyama , Junichi Koezuka
IPC分类号： H01L21/42 , H01L21/84 , H01L21/336 , H01L27/12 , H01L29/786
CPC分类号： H01L21/40 , H01L21/02175 , H01L21/02252 , H01L21/02565 , H01L21/02636 , H01L21/02664 , H01L21/324 , H01L21/383 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
摘要翻译：在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

79. 发明授权

US08823092B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08823092B2
公开(公告)日：2014-09-02
申请号：US13297480
申请日：2011-11-16
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/66 , H01L21/84
CPC分类号： H01L29/7869 , H01L29/1054 , H01L29/247 , H01L29/4908 , H01L29/66969 , H01L29/78696
摘要： An object is to provide a transistor in which the state of an interface between an oxide semiconductor layer and an insulating film (gate insulating layer) in contact with the oxide semiconductor layer is favorable; and a method for manufacturing the transistor. In order to obtain the transistor, nitrogen is added to a region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer. Specifically, a concentration gradient of nitrogen is formed in the oxide semiconductor layer, and a region containing much nitrogen is provided at the interface with the gate insulating layer. By the addition of nitrogen, a region with high crystallinity can be formed in the region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer, so that a stable interface state can be obtained.
摘要翻译：目的在于提供一种晶体管，其中与氧化物半导体层接触的氧化物半导体层和绝缘膜（栅极绝缘层）之间的界面的状态是有利的; 以及晶体管的制造方法。为了获得晶体管，在与栅极绝缘层的界面附近，在氧化物半导体层的区域添加氮。具体地，在氧化物半导体层中形成氮的浓度梯度，并且在与栅绝缘层的界面处设置含有大量氮的区域。通过添加氮，可以在与栅极绝缘层的界面附近的氧化物半导体层的区域中形成具有高结晶度的区域，从而可以获得稳定的界面状态。

80. 发明授权

US08822997B2 Electrophoretic display device and method for manufacturing thereof 有权
标题翻译：电泳显示装置及其制造方法
公开(公告)号：US08822997B2
公开(公告)日：2014-09-02
申请号：US12212983
申请日：2008-09-18
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/10 , H01L29/04 , H01L31/00
CPC分类号： H01L27/1266 , G02F1/1368 , G02F1/167 , H01L27/1214 , H01L27/1218 , H01L29/04 , H01L29/78603 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： It is an object to provide an electrophoretic display device having a thin film transistor which has highly reliable electric characteristics, lightweight, and flexibility. A gate insulating film is formed over a gate electrode, a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film, a buffer layer is formed over the microcrystalline semiconductor film, a pair of source and drain regions are formed over the buffer layer, a pair of the source and drain electrodes in contact with the source and drain regions are formed. Then, the inverted-staggered thin film transistor is interposed between the flexible substrates, and the thin film transistor is provided with electrophoretic display element which is electrically connected by the pixel electrode. Then, the electrophoretic display electrode is surrounded by the partition layer so as to cover the end portion of the pixel electrode and provided over the pixel electrode.
摘要翻译：本发明的目的是提供一种具有薄膜晶体管的电泳显示装置，该薄膜晶体管具有高度可靠的电特性，重量轻和灵活性。在栅电极上形成栅极绝缘膜，在栅绝缘膜上形成作为沟道形成区域的微晶半导体膜，在微晶半导体膜上形成缓冲层，形成一对源区和漏区在缓冲层上形成与源区和漏区接触的一对源极和漏极。然后，倒置交错薄膜晶体管插入在柔性基板之间，并且薄膜晶体管设置有通过像素电极电连接的电泳显示元件。然后，电泳显示电极被分隔层包围，以覆盖像素电极的端部并且设置在像素电极上。

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