专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US6054739A Semiconductor device having channel refractive index in first and second directions 失效
$Semiconductor device having channel refractive index in first and second directions$
标题翻译：半导体器件在第一和第二方向上具有沟道折射率
公开(公告)号：US6054739A
公开(公告)日：2000-04-25
申请号：US10486
申请日：1998-01-21
申请人： Shunpei Yamazaki , Naoto Kusumoto , Koichiro Tanaka
发明人： Shunpei Yamazaki , Naoto Kusumoto , Koichiro Tanaka
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/26
CPC分类号： H01L29/78696 , H01L21/2026 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/66765
摘要： In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.
摘要翻译：在通过激光照射进行退火来制造半导体器件的同时，在垂直于线的方向上扫描线性激光，对半导体材料进行退火。在这种状态下，由于在与线方向对应的光束横向的退火效应是与扫描方向相反的2倍以上的退火效应，因此沿着照射线状激光的线方向形成多个半导体元件。而且，连接薄膜晶体管的源极和漏极区域的线方向与线性激光的线方向对准。

72. 发明授权

US08734915B2 Film-formation method and manufacturing method of light-emitting device 有权
标题翻译：发光装置的成膜方法和制造方法
公开(公告)号：US08734915B2
公开(公告)日：2014-05-27
申请号：US12391840
申请日：2009-02-24
申请人： Shunpei Yamazaki , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka , Satoshi Seo
发明人： Shunpei Yamazaki , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka , Satoshi Seo
IPC分类号： B05D3/06 , B05D5/12 , C23C14/32 , C23C14/28
CPC分类号： C23C14/28 , C23C14/048 , H01L27/3211 , H01L51/0013 , H01L51/56
摘要： A film-formation method whereby a minute pattern thin film can be formed on a deposition substrate, without provision of a mask between a material and the deposition substrate. Moreover, a light-emitting element is formed by such a film-formation method, and a high-definition light-emitting device can be manufactured. Through a film-formation substrate in which a reflective layer, a light-absorbing layer and a material layer are formed, the light-absorbing layer is irradiated with light, so that a material contained in the material layer is deposited on a deposition substrate which is disposed to face the film-formation substrate. Since the reflective layer is selectively formed, a film to be deposited on the deposition substrate can be selectively formed with a minute pattern reflecting the pattern of the reflective layer. A wet process can be employed for formation of the material layer.
摘要翻译：可以在沉积基板上形成微图案薄膜而不在材料和沉积基板之间设置掩模的成膜方法。此外，通过这样的成膜方法形成发光元件，并且可以制造高清晰度发光器件。通过形成反射层，光吸收层和材料层的成膜基板，对光吸收层照射光，使得包含在材料层中的材料沉积在沉积基板上配置成面对成膜基板。由于选择性地形成反射层，所以可以以反射层的图案的微小图案选择性地形成沉积在沉积基板上的膜。可以采用湿法来形成材料层。

73. 发明授权

US08344336B2 Apparatus and method for doping 失效
公开(公告)号：US08344336B2
公开(公告)日：2013-01-01
申请号：US13208581
申请日：2011-08-12
申请人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
IPC分类号： H01J37/317
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

74. 发明授权

US08202811B2 Manufacturing apparatus for selectively removing one or more material layers by laser ablation 有权
标题翻译：用于通过激光烧蚀选择性地去除一个或多个材料层的制造装置
公开(公告)号：US08202811B2
公开(公告)日：2012-06-19
申请号：US12878461
申请日：2010-09-09
申请人： Koichiro Tanaka , Shunpei Yamazaki
发明人： Koichiro Tanaka , Shunpei Yamazaki
IPC分类号： H01L21/428 , B23K26/06
CPC分类号： B23K26/0738 , B23K26/066 , B23K26/0732 , H01L27/1214 , H01L27/1288 , Y10S438/94
摘要： To provide a manufacturing apparatus of a semiconductor device, which does not use a stepper in a manufacturing process in the case where mass production of semiconductor devices is carried out by using a large-sized substrate. A thin film formed over a substrate having an insulating surface is selectively irradiated with a laser beam through light control means, specifically through an electro-optical device to cause ablation; accordingly, the thin film is partially removed, thereby processing the thin film in a remaining region into a desired shape. The electro-optical device functions as a variable mask by inputting an electrical signal based on design CAD data of the semiconductor device.
摘要翻译：为了提供在通过使用大尺寸基板进行半导体器件的批量生产的情况下在制造工艺中不使用步进器的半导体器件的制造装置。通过光控制装置，特别是通过电光装置选择性地用激光束照射形成在具有绝缘表面的基板上的薄膜以引起烧蚀; 因此，薄膜被部分去除，从而将剩余区域中的薄膜处理成期望的形状。电光装置通过基于半导体器件的设计CAD数据输入电信号而用作可变掩模。

75. 发明授权

US08183067B2 Method for manufacturing display device including laser irradiation and selective removing of a light absorber layer 有权
标题翻译：用于制造包括激光照射和选择性去除光吸收层的显示装置的方法
公开(公告)号：US08183067B2
公开(公告)日：2012-05-22
申请号：US11881233
申请日：2007-07-26
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Ikuko Kawamata
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Ikuko Kawamata
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/41733
摘要： A display device which can be manufactured with improved material use efficiency and through a simplified manufacturing process, and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light to remove an irradiated region of the insulating layer so that a first opening is formed in the insulating layer, and the light-absorbing layer is selectively removed by using the insulating layer having the first opening as a mask so that a second opening is formed in the insulating layer and the light-absorbing layer. A conductive film is formed in the second opening to be in contact with the light-absorbing layer, thereby electrically connecting to the light-absorbing layer with the insulating layer interposed therebetween.
摘要翻译：可以制造具有改善的材料使用效率并且通过简化制造工艺的显示装置及其制造技术。形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，以除去绝缘层的照射区域，使得第一开口为并且通过使用具有第一开口的绝缘层作为掩模来选择性地去除光吸收层，使得在绝缘层和光吸收层中形成第二开口。在第二开口中形成与光吸收层接触的导电膜，从而与隔着绝缘层的光吸收层电连接。

76. 发明申请

US20120021592A1 APPARATUS AND METHOD FOR DOPING 失效
标题翻译：装置和方法
公开(公告)号：US20120021592A1
公开(公告)日：2012-01-26
申请号：US13208581
申请日：2011-08-12
申请人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toshiji Hamatani , Koichiro Tanaka
IPC分类号： H01L21/265
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译：提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。

77. 发明授权

US07981766B2 Manufacturing method and manufacturing apparatus of semiconductor 有权
标题翻译：半导体的制造方法和制造装置
公开(公告)号：US07981766B2
公开(公告)日：2011-07-19
申请号：US12222546
申请日：2008-08-12
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1229 , H01L27/3244 , Y10T29/41
摘要： To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}.
摘要翻译：为了提供使用SOI衬底的半导体器件的制造方法，可以提高移动性。使用多个接合基板（半导体基板）形成的多个半导体膜被接合到一个基板（支撑基板）。多个接合基板中的至少一个具有不同于其它接合基板的晶面取向。因此，在一个基底基板上形成的多个半导体膜中的至少一个具有不同于其它半导体膜的晶面取向。根据使用半导体膜形成的半导体元件的极性来确定半导体膜的晶面取向。例如，使用具有面{100}的半导体膜，使用具有面{110}的半导体膜形成空穴为多数载流子的p沟道元件，形成电子为多数载流子的n沟道元件 }。

78. 发明授权

US07902002B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07902002B2
公开(公告)日：2011-03-08
申请号：US11631545
申请日：2005-07-25
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1285 , H01L21/0237 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L27/1296 , H01L29/78621
摘要： When a semi-conductor film is irradiated with conventional pulsed laser light, unevenness, which is called as ridge, is caused on the surface of the semiconductor film. In the case of a top-gate type TFT, element characteristics are changed depending on the ridge. In particular, there is a problem in that variation in the plural thin film transistors electrically connected in parallel with one another. According to the present invention, in manufacturing a circuit including plural thin film transistors, the width LP of a region (not including a microcrystal region) that is melted by irradiating a semiconductor film with light of a continuous wave laser is enlarged, and active layers of a plurality of thin film transistors (that are electrically connected in parallel with one another) are arranged in one region.
摘要翻译：当用传统脉冲激光照射半导体膜时，在半导体膜的表面上产生称为脊的不均匀性。在顶栅型TFT的情况下，元件特性根据脊变化。特别地，存在这样的问题，即多个薄膜晶体管彼此并联电连接的变化。根据本发明，在制造包括多个薄膜晶体管的电路时，通过用连续波激光的光照射半导体膜而熔化的区域（不包括微晶区）的宽度LP被扩大，并且有源层的多个薄膜晶体管（彼此并联电连接）设置在一个区域中。

79. 发明授权

US07816195B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07816195B2
公开(公告)日：2010-10-19
申请号：US12041014
申请日：2008-03-03
申请人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
发明人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L27/127 , G02F1/13454 , H01L27/1203 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/78696
摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.
摘要翻译：具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。

80. 发明授权

US07807483B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07807483B2
公开(公告)日：2010-10-05
申请号：US11880948
申请日：2007-07-25
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Hirotada Oishi
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Hirotada Oishi
IPC分类号： H01L21/00
CPC分类号： G02F1/136286 , H01L21/76802 , H01L21/76838 , H01L27/124 , H01L27/1248 , H01L51/5284 , H01L51/529 , H01L51/56 , H01L2227/323
摘要： An object is to provide a display device that can be manufactured by improvement of use efficiency of a material and simplification of a manufacturing process. A light absorbing layer is formed, an insulating layer is formed over the light absorbing layer, the light absorbing layer and the insulating layer are selectively irradiated with laser light, an irradiated region in the insulating layer is removed to form an opening in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light absorbing layer. The conductive film is formed in the opening so as to be in contact with the light absorbing layer, which is exposed, so that the light absorbing layer and the conductive layer can be electrically connected with the insulating layer interposed therebetween.
摘要翻译：本发明的目的是提供可以通过提高材料的使用效率和简化制造工艺来制造的显示装置。形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，去除绝缘层中的照射区域，以在绝缘层中形成开口并且在开口中形成导电膜以与光吸收层接触。导电膜形成在开口中以与被曝光的光吸收层接触，使得光吸收层和导电层可以与插入其间的绝缘层电连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式