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    • 71. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20080230821A1
    • 2008-09-25
    • US12073615
    • 2008-03-07
    • Yutaka Shionoiri
    • Yutaka Shionoiri
    • H01L27/06
    • G06K19/0723G06K19/0701G06K19/0715
    • In a semiconductor device which can perform data communication through wireless communication, to suppress transmission and the like of an AC signal, the semiconductor device includes an input circuit to which a radio signal is input, a first circuit, which generates a constant voltage, such as a constant voltage circuit or a limiter circuit, a second circuit to which the generated constant voltage is input and which can change impedance of the semiconductor device, and a filter provided between the first circuit and the second circuit. Transmission of an AC signal is suppressed by the filter, and malfunctions or operation defects such as complete inoperative due to variation in the constant voltage is prevented.
    • 在能够通过无线通信进行数据通信的半导体装置中,为了抑制交流信号的发送等,半导体装置具备输入无线信号的输入电路,产生恒定电压的第一电路, 作为恒压电路或限幅电路,输入所产生的恒定电压并能够改变半导体器件的阻抗的第二电路以及设置在第一电路和第二电路之间的滤波器。 通过滤波器抑制AC信号的传输,并且防止由于恒定电压的变化而导致的故障或诸如完全不工作的操作缺陷。
    • 72. 发明申请
    • Transmitting and receiving circuit and semiconductor device including the same
    • 发射和接收电路和包括其的半导体器件
    • US20080149738A1
    • 2008-06-26
    • US12003112
    • 2007-12-20
    • Masashi FujitaYutaka Shionoiri
    • Masashi FujitaYutaka Shionoiri
    • G06K19/06
    • H03F1/56H03F1/0205H03F3/245H03F2200/327
    • An object is to provide a circuit configuration with which the number of transistors can be reduced and power conversion efficiency can be prevented from being reduced, in a transmitting and receiving circuit. The transmitting and receiving circuit includes a voltage doubler rectifier circuit having N stages, each of which includes a capacitor, where N is a positive integer. The voltage doubler rectifier circuit having N stages is connected to a circuit having a modulation function. In the capacitor in any one of the N stages, one electrode of the one capacitor is connected to an input terminal of the transmitting and receiving circuit, and a node to which the other electrode of the one capacitor is connected is connected to a circuit having a demodulation function. Since the transmitting and receiving circuit can be formed of fewer transistors, it can be reduced in size. Since a reduction in power conversion efficiency can be prevented, a power supply potential can be efficiently generated.
    • 目的在于提供一种在发送和接收电路中可以减少晶体管数量并且可以防止功率转换效率降低的电路配置。 发送和接收电路包括具有N级的倍压整流电路,每个级包括电容器,其中N是正整数。 具有N级的倍压整流电路连接到具有调制功能的电路。 在N级中的任何一级的电容器中,一个电容器的一个电极连接到发送和接收电路的输入端子,并且连接一个电容器的另一个电极的节点连接到具有 解调功能。 由于发送和接收电路可以由更少的晶体管形成,所以可以减小其尺寸。 由于可以防止功率转换效率的降低,所以可以有效地产生电源电位。
    • 74. 发明授权
    • Memory and driving method of the same
    • 内存和驱动方法相同
    • US07352604B2
    • 2008-04-01
    • US11607053
    • 2006-12-01
    • Yutaka ShionoiriTomoaki AtsumiKiyoshi Kato
    • Yutaka ShionoiriTomoaki AtsumiKiyoshi Kato
    • G11C17/00
    • G11C7/1096G11C7/1078G11C7/12G11C11/4094G11C17/12
    • According to the invention, mounting area is decreased and yield is improved by decreasing the number of elements, and a memory with less burden on peripheral circuitry and a driving method thereof are provided. The invention comprises a memory cell including a memory element in a region where a bit line and a word line cross with an insulator interposed between them, a column decoder, and a selector including a clocked inverter. An input node of the clocked inverter is connected to the bit line while an output node is connected to a data line. Among a plurality of transistors connected in series which form the clocked inverter, a gate of a P-type transistor of which source or drain is connected to a power source on the high potential side VDD and a gate of an N-type transistor of which source or drain is connected to a power source on the low potential side VSS are connected to the column decoder.
    • 根据本发明,通过减少元件的数量来减小安装面积并提高产量,并且提供了对外围电路的负担较小的存储器及其驱动方法。 本发明包括一个存储单元,其中存储单元包括位线和字线与插在它们之间的绝缘体交叉的区域中的存储元件,列解码器和包括时钟反相器的选择器。 时钟反相器的输入节点连接到位线,而输出节点连接到数据线。 在形成时钟反相器的串联连接的多个晶体管中,源极或漏极连接到高电位侧VDD上的电源的P型晶体管的栅极和N型晶体管的栅极 源极或漏极连接到低电位侧的电源VSS连接到列解码器。
    • 79. 发明申请
    • Pulse output circuit, shift register and electronic equipment
    • 脉冲输出电路,移位寄存器和电子设备
    • US20050062515A1
    • 2005-03-24
    • US10958568
    • 2004-10-06
    • Shou NagaoYoshifumi TanadaYutaka ShionoiriHiroyuki Miyake
    • Shou NagaoYoshifumi TanadaYutaka ShionoiriHiroyuki Miyake
    • G02F1/1345G02F1/133G02F1/1368G06F1/04G09G3/20G09G3/36G11C19/00G11C19/28H01L51/50H03K3/013H03K3/353H03K17/00H03K17/693H03K19/0175H03L5/00H05B33/14
    • G11C19/28G09G3/3688G09G2310/0275G11C19/00
    • A driver circuit of a display device, which includes TFTs of a single conductivity type and outputs an output signal with normal amplitude. A pulse is inputted to TFTs 101 and 104 to turn ON the TFTs and a potential of a node α is raised. When the potential of the node α reaches (VDD−VthN), the node α becomes in a floating state. Accordingly, a TFT 105 is turned ON and a potential of an output node is raised as a clock signal becomes High level. On the other hand, a potential of a gate electrode of the TFT 105 is further raised due to an operation of a capacitance means 107 as the potential of the output node is raised, so that the potential of the gate electrode of the TFT 105 becomes higher than (VDD+VthN). Thus, the potential of the output node is raised to VDD without causing a voltage drop due to a threshold voltage of the TFT 105. An output at the subsequent stage is then inputted to a TFT 103 to turn the TFT 103 ON, while the potential of the node α of TFTs 102 and 106 is dropped to turn the TFT 105 OFF. As a result, the potential of the output node becomes Low level.
    • 一种显示装置的驱动电路,其包括单导电类型的TFT并输出具有正常振幅的输出信号。 一个脉冲被输入到TFT101和104,使TFT导通,并且提高节点α的电位。 当节点α的电位达到(VDD-VthN)时,节点α变为浮动状态。 因此,随着时钟信号变为高电平,TFT 105导通,输出节点的电位升高。 另一方面,随着输出节点的电位升高,由于电容装置107的操作,TFT 105的栅电极的电位进一步上升,使得TFT 105的栅电极的电位变为 高于(VDD + VthN)。 因此,输出节点的电位升高到VDD,而不会由于TFT 105的阈值电压引起电压降。然后,后级的输出被输入到TFT103,使TFT103导通,同时电位 的TFT102和106的节点α的下降以使TFT 105关闭。 结果,输出节点的电位变为低电平。