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71. 发明授权

US06258698B1 Process for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US06258698B1
公开(公告)日：2001-07-10
申请号：US09046600
申请日：1998-03-24
申请人： Yukiko Iwasaki , Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Yukiko Iwasaki , Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2130
CPC分类号： H01L21/2007
摘要： A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.
摘要翻译：提供了一种制造半导体衬底的方法，其包括：第一步骤，阳极氧化第一衬底的表面以在表面上形成多孔层;第二步骤，在多孔层的表面上同时形成半导体层，半导体在与第一基板的与多孔层侧相反的一侧的表面上的第三步骤，将形成在多孔层的表面上的半导体层的表面接合到第二基板的表面上的第三步骤，在所述多孔层的一部分处分离所述第一基板和所述第二基板，以将所述半导体层转移到所述第二基板，所述半导体层形成在所述多孔层的表面上，从而在所述第二基板的表面上提供所述半导体层。这使得可以以低成本制造半导体衬底，同时充分利用昂贵的衬底材料。

72. 发明授权

US06248948B1 Solar cell module and method of producing the same 失效
标题翻译：太阳能电池组件及其制造方法
公开(公告)号：US06248948B1
公开(公告)日：2001-06-19
申请号：US09310953
申请日：1999-05-13
申请人： Katsumi Nakagawa , Shoji Nishida , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Shoji Nishida , Yukiko Iwasaki
IPC分类号： H01L2500
CPC分类号： H01L31/042 , H01L31/0443 , H01L31/0504 , Y02E10/50
摘要： A solar cell module comprises a plurality of unit cells connected in series, each of the unit cells comprising in this order an electrode, a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type. The electrode has a region not covered with the first semiconductor layer. The second semiconductor layer has a main region and a subregion which are separated by a groove. The main region of the second semiconductor layer in one unit cell is electrically connected to the region of the electrode not covered with the first semiconductor layer in another unit cell adjacent to the one unit cell. The region of the electrode not covered with the first semiconductor layer in the one unit cell is electrically connected to the subregion of the second semiconductor layer in the another unit cell. With this structure, it is possible to simplify the formation of a bypass diode and therefore provide a solar cell module with high reliability at a low cost.
摘要翻译：太阳能电池模块包括串联连接的多个单元电池，每个单电池依次包括电极，具有第一导电类型的第一半导体层和具有第二导电类型的第二半导体层。电极具有未被第一半导体层覆盖的区域。第二半导体层具有由沟槽分隔开的主区域和子区域。一个单元电池中的第二半导体层的主要区域与在一个单位电池相邻的另一单元电池中未被第一半导体层覆盖的电极的区域电连接。在一个单元电池中没有被第一半导体层覆盖的电极的区域电连接到另一个晶胞中的第二半导体层的子区域。利用这种结构，可以简化旁路二极管的形成，从而以低成本提供高可靠性的太阳能电池模块。

73. 发明授权

US5403751A Process for producing a thin silicon solar cell 失效
标题翻译：薄硅太阳能电池的制造方法
公开(公告)号：US5403751A
公开(公告)日：1995-04-04
申请号：US262381
申请日：1994-06-20
申请人： Shoji Nishida , Kenji Yamagata
发明人： Shoji Nishida , Kenji Yamagata
IPC分类号： H01L21/20 , H01L31/0224 , H01L31/18 , H01L21/329
CPC分类号： H01L31/022425 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S117/915 , Y10S148/153
摘要： A process for the production of a solar cell, characterized in that the surface of a silicon wafer is periodically exposed through minute spaced portions of an insulating layer formed on the silicon wafer; crystal growth is performed until monocrystalline silicon regions caused at the spaced portions by way of selective epitaxial growth and lateral crystal growth become collided with each other; the insulating layer is removed through gaps left among the monocrystals; a resin is embedded in the gaps; an electrode layer is formed over the surfaces of the monocrystalline silicon regions; the surface of the electrode layer is fastened to a substrate through a resin; a body comprising the monocrystalline silicon regions is separated from the silicon wafer; and a counter electrode is disposed to the monocrystalline silicon regions.
摘要翻译：一种用于制造太阳能电池的方法，其特征在于，硅晶片的表面通过在硅晶片上形成的绝缘层的微小间隔部分周期性地暴露; 进行晶体生长，直到通过选择性外延生长和横向晶体生长在间隔部分处引起的单晶硅区域相互碰撞; 通过在单晶中留下的间隙去除绝缘层; 树脂嵌入在间隙中; 在单晶硅区域的表面上形成电极层; 电极层的表面通过树脂固定在基板上; 包括单晶硅区域的主体与硅晶片分离; 并且对电极设置在单晶硅区域。

74. 发明授权

US4456304A Shield tunneling machine and earth removing apparatus therefor 失效
标题翻译：盾构隧道掘进机及其拆除装置
公开(公告)号：US4456304A
公开(公告)日：1984-06-26
申请号：US382708
申请日：1982-05-27
申请人： Tadao Yoshikawa , Shoji Nishida
发明人： Tadao Yoshikawa , Shoji Nishida
IPC分类号： B65G33/14 , E21D9/08 , E21D9/087 , E21D9/12
CPC分类号： E21D9/124 , E21D9/087 , E21D9/12
摘要： An earth removing apparatus for a shield tunneling machine comprising a tubular casing having an excavated earth inlet at one end and a closable outlet for excavated earth at the other end, and a double-shaft screw conveyor rotatably supported by the casing at two portions. The screw conveyor is supported on the casing in the vicinity of its earth inlet by an annular member fitted in an annular recess in the casing, with a bearing provided between the annular member and the casing. Since the forward end of the screw conveyor need not be supported at the center of rotation of the cutter head of the tunneling machine, the apparatus can be designed with greater freedom and is free of objections in its mechanical structure.
摘要翻译：一种用于盾构隧道掘进机的除土装置，包括一端具有挖土的入口的管状壳体和另一端用于挖土的可关闭出口，以及由两壳体可旋转地支承在壳体上的双轴螺旋输送机。螺旋输送机通过安装在壳体中的环形凹部中的环形构件支撑在壳体附近的其接地入口附近，其中轴承设置在环形构件和壳体之间。由于螺旋输送机的前端不需要在隧道机的切割头的旋转中心处被支撑，因此该设备可以被设计成更大的自由度，并且在其机械结构中没有异议。

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