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71. 发明授权

US08294264B2 Radiate under-bump metallization structure for semiconductor devices 有权
标题翻译：用于半导体器件的辐射凸块下金属化结构
公开(公告)号：US08294264B2
公开(公告)日：2012-10-23
申请号：US12750221
申请日：2010-03-30
申请人： Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
发明人： Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L24/05 , H01L24/03 , H01L24/04 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0347 , H01L2224/03828 , H01L2224/0401 , H01L2224/05551 , H01L2224/05552 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/1147 , H01L2224/13007 , H01L2224/13015 , H01L2224/13111 , H01L2224/13116 , H01L2224/16145 , H01L2224/16225 , H01L2224/97 , H01L2225/06513 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/00012
摘要： An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.
摘要翻译：提供了一种用于半导体器件的凸块下金属化（UBM）结构。 UBM结构具有从中心部分延伸出的中心部分和延伸部分。延伸部可以具有任何合适的形状，包括四边形，三角形，圆形，风扇，具有延伸部的风扇或具有弯曲表面的改进的四边形。相邻的UBM结构可以具有相对于彼此对准或旋转的相应延伸部。焊剂可以施加到延伸部分的一部分，以允许覆盖的导电凸块粘附到延伸部分的一部分上。

72. 发明申请

US20110241201A1 Radiate Under-Bump Metallization Structure for Semiconductor Devices 有权
标题翻译：辐射半导体器件的欠冲击金属化结构
公开(公告)号：US20110241201A1
公开(公告)日：2011-10-06
申请号：US12750221
申请日：2010-03-30
申请人： Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
发明人： Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
IPC分类号： H01L23/498 , H01L21/768
CPC分类号： H01L24/05 , H01L24/03 , H01L24/04 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0347 , H01L2224/03828 , H01L2224/0401 , H01L2224/05551 , H01L2224/05552 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/1147 , H01L2224/13007 , H01L2224/13015 , H01L2224/13111 , H01L2224/13116 , H01L2224/16145 , H01L2224/16225 , H01L2224/97 , H01L2225/06513 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/00012
摘要： An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.
摘要翻译：提供了一种用于半导体器件的凸块下金属化（UBM）结构。 UBM结构具有从中心部分延伸出的中心部分和延伸部分。延伸部可以具有任何合适的形状，包括四边形，三角形，圆形，风扇，具有延伸部的风扇或具有弯曲表面的改进的四边形。相邻的UBM结构可以具有相对于彼此对准或旋转的相应延伸部。焊剂可以施加到延伸部分的一部分，以允许覆盖的导电凸块粘附到延伸部分的一部分上。

73. 发明授权

US07420277B2 System for heat dissipation in semiconductor devices 有权
标题翻译：半导体器件散热系统
公开(公告)号：US07420277B2
公开(公告)日：2008-09-02
申请号：US10801475
申请日：2004-03-16
申请人： Hsien-Wei Chen , Jiun-Lin Yeh , Shin-Puu Jeng , Yi-Lung Cheng
发明人： Hsien-Wei Chen , Jiun-Lin Yeh , Shin-Puu Jeng , Yi-Lung Cheng
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/528 , H01L21/76834 , H01L21/76837 , H01L23/4334 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method and system for heat dissipation in semiconductor devices. In one example, an integrated circuit semiconductor device includes a semiconductor substrate; one or more metallurgy layers connected to the semiconductor substrate, and each of the one or more metallurgy layers includes: one or more conductive lines; and one or more dummy structures between the one or more conductive lines and at least two of the one or more dummy structures are connected; and one or more dielectric layers between the one or more metallurgy layers.
摘要翻译：本公开提供了一种用于半导体器件中散热的方法和系统。在一个示例中，集成电路半导体器件包括半导体衬底; 连接到半导体衬底的一个或多个冶金层，并且所述一个或多个冶金层中的每一个包括：一个或多个导电线; 并且连接所述一个或多个导电线与所述一个或多个虚拟结构中的至少两个之间的一个或多个虚设结构; 以及一个或多个冶金层之间的一个或多个电介质层。

74. 发明申请

US20080174022A1 Semiconductor device and fabrication method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080174022A1
公开(公告)日：2008-07-24
申请号：US11655849
申请日：2007-01-22
申请人： Hsien-Wei Chen , Shin-Puu Jeng
发明人： Hsien-Wei Chen , Shin-Puu Jeng
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5256 , H01L21/76808 , H01L21/76811 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device. A dielectric layer is disposed on a substrate having a first region and a second region. A first metal layer and a second layer are embedded in the dielectric layer in the first and second regions, respectively, wherein the first and second metal layers are located at the same level and have different thicknesses. A method for fabricating a semiconductor device is also disclosed.
摘要翻译：半导体器件。电介质层设置在具有第一区域和第二区域的基板上。第一金属层和第二层分别嵌入在第一和第二区域中的介电层中，其中第一和第二金属层位于相同的水平并且具有不同的厚度。还公开了一种制造半导体器件的方法。

75. 发明授权

US07803713B2 Method for fabricating air gap for semiconductor device 有权
标题翻译：制造半导体器件气隙的方法
公开(公告)号：US07803713B2
公开(公告)日：2010-09-28
申请号：US11533809
申请日：2006-09-21
申请人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
发明人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7682 , H01L21/0206
摘要： A method for fabricating an interconnect structure in a semiconductor device. A masking layer is formed on a dielectric layer formed on a substrate, having at least one opening. The opening is transferred into the dielectric layer. A Plasma stripping process is performed to remove the masking layer, such that a damaged sidewall portion of the dielectric layer surrounding the opening therein is formed. The opening in the dielectric layer is filled with a conductive element. The damaged sidewall portion of the dielectric layer is removed to form a gap between the dielectric layer and the conductive element, wherein substances from removal of the damaged sidewall portion of the dielectric layer are formed on the conductive element. The substances are removed using a citric acid solution.
摘要翻译：一种在半导体器件中制造互连结构的方法。在形成在基板上的电介质层上形成有至少一个开口的掩模层。开口转移到电介质层中。进行等离子体剥离处理以去除掩模层，从而形成围绕其中的开口的电介质层的受损侧壁部分。电介质层中的开口填充有导电元件。去除电介质层损坏的侧壁部分，以形成电介质层和导电元件之间的间隙，其中去除导电元件上介质层损坏的侧壁部分的物质。使用柠檬酸溶液除去物质。

76. 发明授权

US07348672B2 Interconnects with improved reliability 有权
标题翻译：互连具有改进的可靠性
公开(公告)号：US07348672B2
公开(公告)日：2008-03-25
申请号：US11175329
申请日：2005-07-07
申请人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
发明人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53238 , H01L21/76834 , H01L21/76843 , H01L23/5283 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： An interconnect architecture with improved reliability. An interconnect with rounded top corners is inlaid in a dielectric layer. A filler borders the interconnect along the corners of the interconnect.
摘要翻译：具有提高可靠性的互连架构。具有圆形顶角的互连嵌入介电层。填充物沿着互连的角落边界。

77. 发明申请

US20060125090A1 Heat dissipation structure and method thereof 审中-公开
标题翻译：散热结构及其方法
公开(公告)号：US20060125090A1
公开(公告)日：2006-06-15
申请号：US11338551
申请日：2006-01-24
申请人： Hsuch-Chung Chen , Yi-Lung Cheng , Hsien-Wei Chen , Shin-Puu Jeng
发明人： Hsuch-Chung Chen , Yi-Lung Cheng , Hsien-Wei Chen , Shin-Puu Jeng
IPC分类号： H01L23/34
CPC分类号： H01L23/5286 , H01L23/3677 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure and method for dissipating heat away from a semiconductor device having a plurality of power lines is provided. The semiconductor structure includes a semiconductor substrate and a plurality of interconnect structures disposed on the substrate and in contact therewith and extending through the semiconductor device, the interconnect structures for dissipating heat to the substrate. Each of the plurality of interconnect structures comprises at least one via stack.
摘要翻译：提供了一种半导体结构和方法，用于从具有多个电源线的半导体器件散发热量。半导体结构包括半导体衬底和布置在衬底上并与其接触并延伸穿过半导体器件的多个互连结构，用于将热量散发到衬底的互连结构。多个互连结构中的每一个包括至少一个通孔堆叠。

78. 发明授权

US08174124B2 Dummy pattern in wafer backside routing 有权
标题翻译：晶圆背面路由中的虚拟图案
公开(公告)号：US08174124B2
公开(公告)日：2012-05-08
申请号：US12756727
申请日：2010-04-08
申请人： Ming-Yen Chiu , Hsien-Wei Chen , Ming-Fa Chen , Shin-Puu Jeng
发明人： Ming-Yen Chiu , Hsien-Wei Chen , Ming-Fa Chen , Shin-Puu Jeng
IPC分类号： H01L23/48
CPC分类号： H01L23/522 , H01L21/6835 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/13 , H01L24/14 , H01L2221/68327 , H01L2221/6834 , H01L2221/68372 , H01L2224/0401 , H01L2224/05075 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/0557 , H01L2224/05572 , H01L2224/06515 , H01L2224/13147 , H01L2224/13644 , H01L2224/13655 , H01L2224/14181 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要： A device includes a semiconductor substrate including a front side and a backside. A through-substrate via (TSV) penetrates the semiconductor substrate. A dummy metal line is formed on the backside of the semiconductor substrate, and may be connected to the dummy TSV.
摘要翻译：一种器件包括包括正面和背面的半导体衬底。贯穿衬底通孔（TSV）穿透半导体衬底。虚拟金属线形成在半导体衬底的背面，并且可以连接到虚拟TSV。

79. 发明申请

US20080231393A1 STRUCTURE DESIGN FOR MINIMIZING ON-CHIP INTERCONNECT INDUCTANCE 有权
标题翻译：用于最小化片上互连电感的结构设计
公开(公告)号：US20080231393A1
公开(公告)日：2008-09-25
申请号：US11688903
申请日：2007-03-21
申请人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
发明人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
IPC分类号： H01P3/08
CPC分类号： H01P3/08
摘要： A semiconductor device comprising a signal line and ground line is disclosed. The signal line comprises an opening and at least a portion of the ground line is in the opening in the signal line.
摘要翻译：公开了一种包括信号线和接地线的半导体器件。信号线包括开口，并且接地线的至少一部分在信号线中的开口中。

80. 发明申请

US20070007653A1 Interconnects with improved reliability 有权
标题翻译：互连具有改进的可靠性
公开(公告)号：US20070007653A1
公开(公告)日：2007-01-11
申请号：US11175329
申请日：2005-07-07
申请人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
发明人： Hsien-Wei Chen , Hsueh-Chung Chen , Shin-Puu Jeng
IPC分类号： H01L23/52
CPC分类号： H01L23/53238 , H01L21/76834 , H01L21/76843 , H01L23/5283 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： An interconnect architecture with improved reliability. An interconnect with rounded top corners is inlaid in a dielectric layer. A filler borders the interconnect along the corners of the interconnect.
摘要翻译：具有提高可靠性的互连架构。具有圆形顶角的互连嵌入介电层。填充物沿着互连的角落边界。

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